Patent application number | Description | Published |
20110212564 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 09-01-2011 |
20110256658 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 10-20-2011 |
20120313199 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 12-13-2012 |
20130025669 | PHOTOVOLTAIC CELL SUBSTRATE, METHOD OF PRODUCING PHOTOVOLTAIC CELL SUBSTRATE, PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTAIC CELL - The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n | 01-31-2013 |
20130025670 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 01-31-2013 |
20130071968 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-21-2013 |
20130078759 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-28-2013 |
20140065761 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140076396 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 03-20-2014 |
20140120648 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 05-01-2014 |
20140242741 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 08-28-2014 |
20150017754 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE HAVING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT - The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element. | 01-15-2015 |