Patent application number | Description | Published |
20100133090 | FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF - To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage. | 06-03-2010 |
20100155227 | SPUTTERING APPARATUS AND FILM FORMING METHOD - The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode ( | 06-24-2010 |
20100155229 | SPUTTERING APPARATUS AND FILM DEPOSITION METHOD - The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode ( | 06-24-2010 |
20100213048 | MAGNETRON SPUTTERING CATHODE, MAGNETRON SPUTTERING APPARATUS, AND METHOD OF MANUFACTURING MAGNETIC DEVICE - To provide a magnetron sputtering cathode, a magnetron sputtering apparatus, and a method of manufacturing a magnetic device, capable of generating a leakage magnetic field sufficiently large to form a magnetic tunnel necessary for discharge on the surface of a target even when the target is a magnetic body and thick and a ferromagnetic body is used as the target. The magnetron sputtering cathode of the present invention includes a target having a second annular groove provided on the sputtering surface of the target, a third annular projection provided on the non-sputtering surface of the target, a fourth annular groove provided outside the third annular projection on the non-sputtering surface, and a fourth annular projection provided outside the fourth annular groove on the non-sputtering surface. Further, the magnetron sputtering cathode includes a first magnet and a second magnet | 08-26-2010 |
20110032645 | MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM - The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction. | 02-10-2011 |
20110272278 | SPUTTERING APPARATUS - The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source. | 11-10-2011 |
20110297537 | MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS - The present invention provides a magnet unit and a magnetron sputtering apparatus which can suppress the consumption amount of a target by efficiently consuming the target and can easily cause erosion on the target to progress uniformly regardless whether the target size is small or large and whether the target is made of magnetic material or not. A magnet unit according to an embodiment of the present invention includes a member configured to be provided with a predetermined magnet, an internal magnet unit which is provided for the member and includes n magnet elements extending radially in the surface of the member from a predetermined position of the member in at least n (n: positive integer equal to or larger than 3) directions, the n magnet elements having one polarity on a side opposite to the member, and an external magnet unit which is provided for the member so as to surround the internal magnet unit along the shape of the internal magnet unit, the external magnet unit having the other polarity on a side opposite to the member. | 12-08-2011 |
20120247952 | FILM FORMING METHOD BY SPUTTERING APPARATUS AND SPUTTERING APPARATUS - The present invention provides a film forming method which can reduce deterioration of film thickness distribution even if the thickness of a film to be formed is extremely small while improving use efficiency of a target and a sputtering apparatus. A film forming method by a sputtering apparatus according to one embodiment of the present invention has a first step of fixing a magnet to a first position and performing film formation on a substrate on a substrate support surface, a second step of moving the magnet to a second position different from the first position after finishing the film formation on the substrate and then fixing it thereto, and a third step of performing film formation on the substrate on the substrate support surface by using the magnet fixed to the second position. | 10-04-2012 |