Patent application number | Description | Published |
20080215274 | Evaluation method of fine pattern feature, its equipment, and method of semiconductor device fabrication - Equipment extracts components of spatial frequency that need to be evaluated in manufacturing a device or in analyzing a material or process out of edge roughness on fine line patterns and displays them as indexes. The equipment acquires data of edge roughness over a sufficiently long area, integrates a components corresponding to a spatial frequency region being set on a power spectrum by the operator, and displays them on a length measuring SEM. Alternatively, the equipment divides the edge roughness data of the sufficiently long area, computes long-period roughness and short-period roughness that correspond to an arbitrary inspection area by performing statistical processing and fitting based on theoretical calculation, and displays them on the length measuring SEM. | 09-04-2008 |
20080217532 | METHOD AND APPARATUS FOR SETTING SAMPLE OBSERVATION CONDITION, AND METHOD AND APPARATUS FOR SAMPLE OBSERVATION - A method and apparatus for setting a sample observation condition and a method and apparatus for sample observation which allow sample observation by speedily and simply finding an optimum condition while suppressing damage to the sample are provided. The setting of a sample observation condition according to the present invention is realized by an electron beam apparatus acquiring a profile at a predetermined evaluation location of a sample under a reference observation condition, by a processing section judging whether or not the above described acquired profile is located within a predetermined setting range and setting an optimum observation condition to be used for sample observation based on this judgment result. More specifically, locations where the condition can be examined are registered beforehand first and then a jump is made to the corresponding location which is irradiated with an electron beam (hereinafter referred to as “predosing”) at a low magnification, the surface of the sample is charged, enlarged to an observation magnification and secondary electron information on the target location is obtained. After that, secondary electron information is obtained at any time while performing predosing, it is successively judged from the information whether the pattern bottom part can be observed/measured or whether or not the sample is destroyed and an optimum observation condition is thereby found. | 09-11-2008 |
20090032693 | Scanning Electron Microscope Alignment Method and Scanning Electron Microscope - The present invention aims to provide an axis alignment method, astigmatism correction method and SEM for implementing these methods, which can prevent an alignment or correction error attributable to conditions of a specimen. A first aspect is to obtain the difference between the optimal values acquired from an automatic axis alignment result on a standard sample and from each of automatic axis alignment results on a observation target sample, and to correct an optimal value adjusted using the standard sample by use of the difference thus obtained. A second aspect is to acquire an optimal stigmator value (astigmatism correction signal) by using the standard sample, to store the optimal stigmator value as a default value, to add the optimal stigmator value and the default value depending on the height of an observation target sample pattern, and to perform an astigmatism correction on the basis of the resultant stigmator value. | 02-05-2009 |
20090121134 | Tool-To-Tool Matching Control Method And its System For Scanning Electron Microscope - A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern formed on a wafer, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern formed on the wafer by using each of the plural scanning electron microscopes. | 05-14-2009 |
20090214122 | Image processing apparatus for analysis of pattern matching failure - Information indicating the reason for a failure of template matching is provided. Difference information between a first image, which is referred to as a template, and a third image that is selected by the operator from a second image and that is larger than the template is displayed. | 08-27-2009 |
20090242765 | SCANNING ELECTRON MICROSCOPE - It is facilitated in a scanning electron microscope to save the labor of executing the reproduction test, conduct basic analysis on a problem caused in execution of the automatic observation process, and confirm details resulting in the error. Upon detecting an error from an abnormality, the scanning electron microscope extracts a sample image lm(t2) obtained by retroceding from a sample image lm(te) stored so as to be associated with time te of error occurrence by a predetermined video quantity (for example, total recording time period t2) previously set and registered by an input-output device, from sample images stored in a recording device while being overwritten, and stores a resultant sample image in another recording device. | 10-01-2009 |
20110133080 | CHARGED PARTICEL BEAM APPARATUS AND METHODS FOR CAPTURING IMAGES USING THE SAME - The present invention provides a charged particle beam apparatus used to measure micro-dimensions (CD value) of a semiconductor apparatus or the like which captures images for measurement. For the present invention, a sample for calibration, on which a plurality of polyhedral structural objects with known angles on surfaces produced by the crystal anisotropic etching technology are arranged in a viewing field, is used. A beam landing angle at each position within a viewing field is calculated based on geometric deformation on an image of each polyhedral structural object. Beam control parameters for equalizing the beam landing angle at each position within the viewing field are pre-registered. The registered beam control parameters are applied according to the position of the pattern to be measured within the viewing field when performing dimensional measurement. Accordingly, the present invention provides methods for reducing the variation in the CD value caused by the variation in the electron beam landing angle with respect to the sample with an equal beam landing angle and methods for reducing the instrumental error caused by the difference in the electron beam landing angle between apparatuses. | 06-09-2011 |
20110278453 | Tool-To-Tool Matching Control Method And Its System For Scanning Electron Microscope - A system for controlling a tool-to-tool disparity between a plurality of scanning electron microscopes includes a measuring unit for measuring a tool-to-tool disparity between plural scanning electron microscopes based on information extracted from secondary electron images which are captured by imaging a reference pattern, a tool state monitoring unit for monitoring tool states of each of the plural scanning electron microscopes, and an output unit for displaying on a screen a relationship between the tool-to-tool disparity between the plural scanning electron microscopes and tool states of each of the plural scanning electron microscopes monitored by the tool state monitoring unit. The tool state monitoring unit monitors the tool states of each of the plural scanning electron microscopes while imaging the reference pattern by using each of the plural scanning electron microscopes. | 11-17-2011 |
20140021349 | PATTERN MEASURING APPARATUS - An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose of a beam falling onto a pattern to be measured. To attain the object, this invention proposes a pattern measuring apparatus which specifies a pattern in a measurement object area by scanning a tilted bean with respect to another area different from the measurement object area and then performs measurement based on the pattern-specifying result. With such arrangement, it becomes possible to perform measurement without the risk of wrong pattern designation while lowering the dose of a beam hitting the measurement object area. | 01-23-2014 |
20140021350 | PATTERN MEASURING APPARATUS - An object of the present invention is to provide a pattern measuring apparatus which performs high-accuracy concavity/convexity determination (e.g., distinguishing between a line segment and space) while simultaneously reducing the dose of a beam falling onto a pattern to be measured. To attain the object, this invention proposes a pattern measuring apparatus which specifies a pattern in a measurement object area by scanning a tilted bean with respect to another area different from the measurement object area and then performs measurement based on the pattern-specifying result. With such arrangement, it becomes possible to perform measurement without the risk of wrong pattern designation while lowering the dose of a beam hitting the measurement object area. | 01-23-2014 |