Patent application number | Description | Published |
20080213559 | PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM - A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less. | 09-04-2008 |
20080272370 | FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer. | 11-06-2008 |
20080303035 | COMPOUND SEMICONDUCTOR FILM, LIGHT EMITTING FILM, AND MANUFACTURING METHOD THEREOF - Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu | 12-11-2008 |
20090008735 | PHOTO DETECTOR, IMAGE SENSOR, PHOTO-DETECTION METHOD, AND IMAGING METHOD - A photo detector includes a photoelectric conversion layer having a periodic structure made of a semiconductor material on a surface of the photoelectric conversion layer. In the photo detector, at least a part of a resonance region formed by the periodic structure is included in the photoelectric conversion layer of the photo detector. | 01-08-2009 |
20090039378 | LIGHT-EMITTING FILM, LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other. | 02-12-2009 |
20090045397 | FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM - An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. | 02-19-2009 |
20090065771 | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added. | 03-12-2009 |
20090072233 | LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME - The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate. | 03-19-2009 |
20090134427 | LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE - There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide. | 05-28-2009 |
20090174012 | Field Effect Transistor - Provided is a field effect transistor, provided with a gate electrode | 07-09-2009 |
20090189153 | FIELD-EFFECT TRANSISTOR - Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not less than 35 atomic % and not more than 55 atomic %. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In+Zn+Ga) is set to be 30 atomic % or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility. | 07-30-2009 |
20090269880 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - A method for manufacturing a thin film transistor containing an channel layer | 10-29-2009 |
20100084655 | FIELD EFFECT TRANSISTOR AND PROCESS FOR PRODUCTION THEREOF - A field effect transistor has a gate electrode, gate-insulating layer, a channel and a source and drain electrodes connected electrically to the channel, the channel comprising an oxide semiconductor, the source electrode or the drain electrode comprising an oxynitride. | 04-08-2010 |
20100092800 | SUBSTRATE FOR GROWING WURTZITE TYPE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE - A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation. | 04-15-2010 |
20100109002 | OXYNITRIDE SEMICONDUCTOR - Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and at least one element selected from the group consisting of In, Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less. | 05-06-2010 |
20100140611 | AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR - In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms. | 06-10-2010 |
20100148170 | FIELD EFFECT TRANSISTOR AND DISPLAY APPARATUS - A field-effect transistor provided with at least a semiconductor layer and a gate electrode disposed over the above-described semiconductor layer with a gate insulating film therebetween, wherein the above-described semiconductor layer includes a first amorphous oxide semiconductor layer having at least one element selected from the group of Zn and In, and a second amorphous oxide semiconductor layer having at least one element selected from the group of Ge and Si and at least one element selected from the group of Zn and In. The composition of the above-described first amorphous oxide semiconductor layer is different from the composition of the above-described second amorphous oxide semiconductor layer. | 06-17-2010 |
20100221420 | PHOSPHOR FILM AND METHOD OF PRODUCING THE PHOSPHOR FILM - A phosphor film high in efficiency and less in luminescence irregularity and a method of producing the phosphor film are provided. The phosphor film includes a zinc sulfide compound containing an additive element(s). The additive element is at least one element selected from the group consisting of Ag, Cu and Au; the concentration of the additive element is 0.2 mol % or more and 5 mol % or less with respect to Zn; and the film thickness of the phosphor film is 10 nm or more and 2 um or less. | 09-02-2010 |
20100224870 | FIELD EFFECT TRANSISTOR - A field effect transistor includes at least a channel layer, a gate insulation layer, a source electrode, a drain electrode, and a gate electrode. The channel layer is formed from an amorphous oxide material that contains at least In and Mg, and an element ratio, expressed by Mg/(In+Mg), of the amorphous oxide material is 0.1 or higher and 0.48 or lower. | 09-09-2010 |
20100258794 | FIELD EFFECT TRANSISTOR - A field effect transistor is provided including a gate electrode ( | 10-14-2010 |
20100264419 | FIELD-EFFECT TRANSISTOR - A field-effect transistor includes at least a channel layer, a gate insulating layer, a source electrode, a drain electrode, and a gate electrode, which are formed on a substrate. The channel layer is made of an amorphous oxide material that contains at least In and B, and the amorphous oxide material has an element ratio B/(In+B) of 0.05 or higher and 0.29 or lower. | 10-21-2010 |
20100276685 | AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR - An amorphous oxide at least includes: at least one element selected from the group consisting of In, Zn, and Sn; and Mo. An atomic composition ratio of Mo to a number of all metallic atoms in the amorphous oxide is 0.1 atom % or higher and 5 atom % or lower. | 11-04-2010 |
20100276689 | FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM - An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. | 11-04-2010 |
20100279462 | FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM - An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. | 11-04-2010 |
20110008584 | FLUORESCENT MATERIAL, FLUORESCENT SUBSTANCE, DISPLAY, AND PROCESS FOR PREPARING FLUORESCENT SUBSTANCE - The present invention aims at providing a novel oxide fluorescent material. The novel oxide fluorescent material is a fluorescent material including: as constituent elements, at least one or more elements selected from the group consisting of Mg, Ca, Sr and Ba; at least one or more elements selected from the group consisting of Si and Ge; at least one or more elements selected from the group consisting of rare earth elements; and oxygen, wherein the crystal structure is a pseudowollastonite crystal structure. The fluorescent substance includes a layer | 01-13-2011 |
20110175081 | THIN FILM TRANSISTOR AND DISPLAY - A thin film transistor includes a gate electrode, a gate insulation layer, a channel layer, a source electrode, and a drain electrode formed on a substrate, in which: the channel layer contains indium, germanium, and oxygen; and the channel layer has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less. | 07-21-2011 |
20110193082 | FIELD EFFECT TRANISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR USING AMORPHOUS OXIDE FILM AS CHANNEL LAYER, AND MANUFACTURING METHOD OF AMORPHOUS OXIDE FILM - An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. | 08-11-2011 |
20110256684 | FIELD EFFECT TRANSISTOR USING OXIDE FILM FOR CHANNEL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a field effect transistor including an oxide film as a semiconductor layer, wherein the oxide film includes one of a source part and a drain part to which one of hydrogen and deuterium is added. | 10-20-2011 |
20120064654 | METHOD FOR PRODUCING LIGHT-EMITTING FILM AND LIGHT-EMITTING DEVICE - Provided is a light-emitting film having controllable resistivity, and a high-luminance light-emitting device, which can be driven at a low voltage, using such light-emitting film. The light-emitting film includes Cu as an addition element in a zinc sulfide compound which is a base material, wherein the zinc sulfide compound includes columnar ZnS crystals, and sites formed of copper sulfide on a grain boundary where the ZnS crystals are in contact with each other. | 03-15-2012 |
20120153277 | CHANNEL-ETCH TYPE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A channel layer is formed on a substrate by using an oxide semiconductor and then a sacrificial layer of an oxide containing In, Zn and Ga and representing an etching rate greater than the etching rate of the oxide semiconductor is formed on the channel layer. Thereafter, a source electrode and a drain electrode are formed on the sacrificial layer and the sacrificial layer exposed between the source electrode and the drain electrode is removed by means of wet etching. | 06-21-2012 |
20130022169 | RADIATION DETECTING DEVICE - Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator. | 01-24-2013 |
20130026374 | RADIATION DETECTOR - Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n | 01-31-2013 |
20130214854 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor. | 08-22-2013 |
20140070211 | FIELD-EFFECT TRANSISTOR - Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not less than 35 atomic % and not more than 55 atomic %. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In+Zn+Ga) is set to be 30 atomic % or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility. | 03-13-2014 |
20140374609 | RADIATION DETECTING ELEMENT USING OXIDE CRYSTAL AND METHOD OF MANUFACTURING OXIDE CRYSTAL - Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 10 | 12-25-2014 |