Patent application number | Description | Published |
20140103529 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS AND STORAGE MEDIUM - In order to obtain a semiconductor device having an embedded electrode with low cost and high reliability, a semiconductor device manufacturing method includes forming a first film made of a metal oxide within an opening which is formed in an insulating film formed on a surface of a substrate; performing a hydrogen radical treatment by irradiating atomic hydrogen to the first film; forming a second film made of a metal within the opening after the performing of the hydrogen radical treatment; and forming an electrode made of a metal within the opening after the forming of the second film. | 04-17-2014 |
20140361436 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied. | 12-11-2014 |
20140374904 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The present disclosure provides a semiconductor device, including: an insulation layer and a wiring line layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. In another embodiment, there is provided a semiconductor device manufacturing method for manufacturing a semiconductor device including an insulation layer and a wiring line layer, including: forming the wiring line layer on the insulation layer, the wiring line layer including a wiring line having a line width and a line height, at least one of which is 15 nm or less, and containing Ni or Co as a main component thereof. | 12-25-2014 |
20150021775 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SEMICONDUCTOR - A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere. | 01-22-2015 |