Patent application number | Description | Published |
20110254095 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer. | 10-20-2011 |
20110259420 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter. | 10-27-2011 |
20110273021 | Photoelectric Conversion Device and Manufacturing Method Thereof - Generation of ripples and the decrease in the output voltage of a photoelectric conversion device are suppressed. The photoelectric conversion device includes a first photoelectric conversion element; a first voltage conversion element for converting the output voltage of the first photoelectric conversion element; a second photoelectric conversion element whose characteristic is different from the characteristic of the first photoelectric conversion element; a second voltage conversion element for converting the output voltage of the second photoelectric conversion element; and a control element for controlling timing of the first voltage conversion element and the second voltage conversion element. | 11-10-2011 |
20110309239 | Photoelectric Transducer Device - An object is to obtain a diode having a small voltage drop and to reduce the fabrication cost of a converter circuit. A photoelectric transducer device including: a photoelectric transducer element; and a converter circuit stepping up or stepping down an output of the photoelectric transducer element and including a switching element and a rectifier, in which the switching element is a first insulated gate bipolar transistor that is normally off and in which the rectifier is a second insulated gate bipolar transistor that is diode-connected and normally on. | 12-22-2011 |
20120043953 | POWER SUPPLY CIRCUIT - In the case where the duty cycle of the PWM signal exists and the duty cycle of the PWM signal is constant for a certain period, a feedback control circuit is operated intermittently with the duty cycle fixed. Specifically, a power supply circuit includes an A/D converter circuit for forming a digital value based on an analog value obtained by monitoring an output voltage based on a reference voltage, a digital filter circuit for smoothing the digital value, a PWM signal generator circuit for generating a PWM signal based on an output value of the digital filter circuit, and an operation mode control circuit for controlling a circuit operation mode based on the duty cycle of the PWM signal. | 02-23-2012 |
20120081089 | POWER SUPPLY CIRCUIT - A power supply circuit includes: an analog/digital converter for converting an analog signal to a digital signal; a pulse width modulation signal control circuit for generating a setting control signal varying in accordance with the difference between a reference voltage and a feedback voltage and a control signal for controlling a pulse width modulation signal, which is based on the digital signal; and a pulse width modulation signal generation circuit for generating the pulse width modulation signal, to which the count signal and the control signal are input, in which the control signal controls the duty cycle of the pulse width modulation signal, and the setting control signal controls the cycle of updating the duty cycle of the pulse width modulation signal. | 04-05-2012 |
20120140550 | INTEGRATED CIRCUIT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR DEVICE - An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop. | 06-07-2012 |
20120170355 | STORAGE ELEMENT, STORAGE DEVICE, AND SIGNAL PROCESSING CIRCUIT - A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read. | 07-05-2012 |
20120195122 | MEMORY CIRCUIT - The present invention provides a memory circuit in which, while the power is not supplied, a data signal that has been held in a memory section corresponding to a volatile memory can be held in a capacitor in a memory section corresponding to a nonvolatile memory. In the nonvolatile memory section, a transistor whose channel is formed in an oxide semiconductor layer allows a signal to be held in the capacitor for a long period. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. A potential applied to a gate of the transistor whose channel is formed in an oxide semiconductor layer is raised by a booster circuit provided between a wiring for carrying power supply potential and the gate of the transistor, allowing a data signal to be held even by one power supply potential without malfunction. | 08-02-2012 |
20120250397 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output. | 10-04-2012 |
20120271984 | MEMORY ELEMENT AND MEMORY DEVICE - An object is to provide a memory element having a novel structure where data can be held even after power supply is stopped. The memory element includes a latch circuit, a first selection circuit, a second selection circuit, a first nonvolatile memory circuit, and a second nonvolatile memory circuit. The first nonvolatile memory circuit and the second nonvolatile memory circuit each include a transistor and a capacitor. The transistor included in each of the first nonvolatile memory circuit and the second nonvolatile memory circuit is a transistor in which a channel is formed in an oxide semiconductor film. The off-state current of such a transistor is extremely small. The transistor is turned off after data is input to a node where the transistor and the capacitor are connected to each other, and data can be held for a long time even after supply of power supply voltage is stopped. | 10-25-2012 |
20120287703 | SEMICONDUCTOR DEVICE - When a CPU provided with a latch memory is operated, a constant storage method or an end storage method is selected depending on what is processed by the CPU; thus, the CPU provided with a latch memory has low power consumption. When the CPU provided with a latch memory is operated, in the case where the number of times of turning on and off the power source is high, a constant storage method is employed and in the case where the number of times of turning on and off the power source is low, an end storage method is employed. Whether a constant storage method or an end storage method is selected is determined based on the threshold value set depending on power consumption. | 11-15-2012 |
20120293203 | SEMICONDUCTOR DEVICE - A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor. | 11-22-2012 |
20120294069 | SIGNAL PROCESSING CIRCUIT - A signal processing circuit includes a memory and a control portion configured to control the memory. The control portion includes a volatile memory circuit including data latch terminals, a first non-volatile memory circuit electrically connected to one of the data latch terminals, a second non-volatile memory circuit electrically connected to the other of the data latch terminals, and a precharge circuit having a function of supplying a potential that is a half of a high power supply potential to the one and the other of the data latch terminals. Each of the first non-volatile memory circuit and the second non-volatile memory circuit includes a transistor having a channel formation region including an oxide semiconductor and a capacitor connected to a node that is brought into a floating state by turning off the transistor. | 11-22-2012 |
20120306467 | DC-DC CONVERTER, POWER SOURCE CIRCUIT, AND SEMICONDUCTOR DEVICE - A DC-DC converter includes a control circuit, a switching element, and a constant-voltage generation portion which generates an output voltage on the basis of an input voltage supplied through the switching element. The control circuit includes AD converters which convert the input voltage and the output voltage, a signal processing circuit, a pulse modulation circuit, and a power supply control circuit which controls supply of a power supply voltage to the signal processing circuit in accordance with digital values of the input voltage and the output voltage. The signal processing circuit determines the duty ratio in accordance with the digital value of the output voltage, and the pulse modulation circuit controls the switching element. The signal processing circuit includes a memory device including a memory element, a capacitor for storing data of the memory element, and a transistor for controlling charge in the capacitor. The transistor includes an oxide semiconductor. | 12-06-2012 |
20120306533 | SEMICONDUCTOR DEVICE - A programmable analog device and an analog device that can retain data even when supply of a power supply potential is interrupted and consumes less power. In a semiconductor device, first to fourth transistors are used as switches in a unit cell including an analog element, and the output of the unit cell switches between a conducting state, a non-conducting state, and a conducting state through the analog element by controlling the potential of a first node where the first transistor and the second transistor are connected and the potential of a second node where the third transistor and the fourth transistor are connected. | 12-06-2012 |
20130134416 | SEMICONDUCTOR DISPLAY DEVICE - In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped. | 05-30-2013 |
20130135943 | MEMORY CIRCUIT AND MEMORY DEVICE - To reduce power consumption, a memory circuit includes a latch unit in which first data and second data are rewritten and read in accordance with a control signal, a first switch unit that controls rewrite and read of the first data stored in the latch unit by being turned on or off in response to the control signal, and a second switch unit that controls rewrite and read of the second data stored in the latch unit by being turned on or off in response to the control signal. The latch unit includes a first inverter and a second inverter. At least one of the first inverter and the second inverter includes a first field-effect transistor, and a second field-effect transistor that has the same conductivity type as the first field-effect transistor and has a gate potential controlled in accordance with the control signal. | 05-30-2013 |
20130140569 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first transistor which includes a first gate electrode below its oxide semiconductor layer and a second gate electrode above its oxide semiconductor layer, and a second transistor which includes a first gate electrode above its oxide semiconductor layer and a second gate electrode below its oxide semiconductor layer and is provided so as to at least partly overlap with the first transistor. In the semiconductor device, a conductive film serving as the second gate electrode of the first transistor and the second gate electrode of the second transistor is shared between the first transistor and the second transistor. Note that the second gate electrode not only controls the threshold voltages (Vth) of the first transistor and the second transistor but also has an effect of reducing interference of an electric field applied from respective first gate electrodes of the first transistor and the second transistor. | 06-06-2013 |
20140042496 | SEMICONDUCTOR DEVICE - A programmable analog device in which data can be held even when supply of a power supply potential is stopped. The programmable circuit includes unit cells connected in parallel or in series, and each of the unit cells includes an analog element. A conduction state of each of the unit cells is changed between an on state and an off state. Each of the unit cells includes, as a switch of the unit cell, a first transistor having a sufficiently low off-state current and a second transistor, a gate electrode of the second transistor being electrically connected to a source or drain electrode of the first transistor. The conduction state of the unit cell is controlled with a potential of the gate electrode of the second transistor, which can be kept even when no power is supplied thanks to the low off-state current of the first transistor. | 02-13-2014 |
20140048802 | Storage Element, Storage Device, And Signal Processing Circuit - A signal processing circuit whose power consumption can be suppressed is provided. In a period during which a power supply voltage is not supplied to a storage element, data stored in a first storage circuit corresponding to a nonvolatile memory can be held by a first capacitor provided in a second storage circuit. With the use of a transistor in which a channel is formed in an oxide semiconductor layer, a signal held in the first capacitor is held for a long time. The storage element can accordingly hold the stored content (data) also in a period during which the supply of the power supply voltage is stopped. A signal held by the first capacitor can be converted into the one corresponding to the state (the on state or off state) of the second transistor and read from the second storage circuit. Consequently, an original signal can be accurately read. | 02-20-2014 |
20140167817 | SEMICONDUCTOR DEVICE - A programmable analog device and an analog device that can retain data even when supply of a power supply potential is interrupted and consumes less power. In a semiconductor device, first to fourth transistors are used as switches in a unit cell including an analog element, and the output of the unit cell switches between a conducting state, a non-conducting state, and a conducting state through the analog element by controlling the potential of a first node where the first transistor and the second transistor are connected and the potential of a second node where the third transistor and the fourth transistor are connected. | 06-19-2014 |
20140313827 | MEMORY CIRCUIT - The present invention provides a memory circuit in which, while the power is not supplied, a data signal that has been held in a memory section corresponding to a volatile memory can be held in a capacitor in a memory section corresponding to a nonvolatile memory. In the nonvolatile memory section, a transistor whose channel is formed in an oxide semiconductor layer allows a signal to be held in the capacitor for a long period. Thus, the memory circuit can hold a logic state (data signal) even while the power supply is stopped. A potential applied to a gate of the transistor whose channel is formed in an oxide semiconductor layer is raised by a booster circuit provided between a wiring for carrying power supply potential and the gate of the transistor, allowing a data signal to be held even by one power supply potential without malfunction. | 10-23-2014 |
20140328124 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - The storage device includes a volatile first memory circuit and a nonvolatile second memory circuit which includes a transistor whose channel is formed in an oxide semiconductor layer. In the case of high-frequency driving, during a period when source voltage is applied, a data signal is input to and output from the first memory circuit, and during a part of a period when source voltage is supplied, which is before the supply of the source voltage is stopped, a data signal is input to the second memory circuit. In the case of low-frequency driving, during a period when source voltage is applied, a data signal is input to the second memory circuit, the data signal input to the second memory circuit is input to the first memory circuit, and the data signal input to the first memory circuit is output. | 11-06-2014 |
20150070064 | INTEGRATED CIRCUIT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR DEVICE - An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop. | 03-12-2015 |