Patent application number | Description | Published |
20080227622 | Dielectric Porcelain Composition for Use in Electronic Devices - The invention intends to provide a dielectric porcelain composition for use in electronic devices, which has the dielectric characteristics such that the Qf value is high, the temperature coefficient τf of a resonant frequency is small and a value thereof can be controlled in a wide range in positive and negative directions in the vicinity where the relative dielectric constant εr is 39. According to the invention, when, in La—Pr—Al—Ga—Sr—Ti-based oxide dielectric porcelain, contents of the respective elements are limited to be within particular ranges and Sr is partially substituted by Ca, a structure having a (1-x)(La | 09-18-2008 |
20080286185 | Method of Producing Semiconductor Porcelain Composition | 11-20-2008 |
20090048090 | SINGLE CRYSTAL MATERIAL AND PROCESS FOR PRODUCING THE SAME - The invention intends to provide a single crystal material that can be used as a dielectric material for use in electronic devices, which has a high Qf value; and a process for producing the same. According to the invention, a single crystal of a composite oxide is obtained from a composition in which a slight amount of SrTiO | 02-19-2009 |
20090111680 | DIELECTRIC PORCELAIN COMPOSITION FOR USE IN ELECTRONIC DEVICES - ABSTRACT The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient πf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg | 04-30-2009 |
20100075825 | SEMICONDUCTOR PORCELAIN COMPOSITION AND METHOD OF PRODUCING THE SAME - A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO | 03-25-2010 |
20100167908 | DIELECTRIC PORCELAIN COMPOSITION FOR USE IN ELECTRONIC DEVICES - The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant εr is high, the Qf value is high and, the temperature coefficient τf can be controlled while maintaining the temperature coefficient τf at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO | 07-01-2010 |
20100279847 | SEMICONDUCTOR CERAMIC COMPOSITION - There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO | 11-04-2010 |
20100323877 | SEMICONDUCTOR PORCELAIN COMPOSITION - The invention intends to provide, in BaTiO | 12-23-2010 |
20110011848 | PROCESS FOR PRODUCING SEMICONDUCTIVE PORCELAIN COMPOSITION AND HEATER EMPLOYING SEMICONDUCTIVE PORCELAIN COMPOSITION - To improve jump characteristic of BaTiO | 01-20-2011 |
20110039369 | PROCESS FOR PRODUCING SEMICONDUCTIVE PORCELAIN COMPOSITION/ELECTRODE ASSEMBLY - A semiconductive porcelain composition/electrode assembly which is low in room temperature resistivity of 100 Ω·cm or less and is reduced in change with the passage of time due to energization with regard to the semiconductive porcelain composition in which a part of Ba of BaTiO | 02-17-2011 |
20120175361 | SEMICONDUCTOR CERAMIC COMPOSITION, METHOD FOR PRODUCING SAME, PTC ELEMENT AND HEAT GENERATING MODULE - There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO | 07-12-2012 |
20140197156 | SEMICONDUCTOR PORCELAIN COMPOSITION, POSITIVE TEMPERATURE COEFFICIENT ELEMENT, AND HEAT-GENERATING MODULE - The present invention provides a semiconductor ceramic composition which is represented by a composition formula of [(Bi.A) | 07-17-2014 |
20150069308 | METHOD FOR PRODUCING SEMICONDUCTOR CERAMIC COMPOSITION - Provided is a method for producing a lead-free, perovskite semiconductor ceramic composition which is capable of suppressing the temperature coefficient of resistance α from becoming small, and obtaining stable characteristics. The method for producing a lead-free semiconductor ceramic composition in which a portion of Ba in a BaTiO | 03-12-2015 |