Patent application number | Description | Published |
20080251718 | ELECTRON BEAM APPARATUS AND SAMPLE OBSERVATION METHOD USING THE SAME - The electron beam apparatus is provided with a stage for mounting a sample thereon, a primary optical system for generating an electron beam having an irradiation area and irradiating the electron beam onto the sample, a secondary optical system for detecting electrons which have been generated through the irradiation of the electron beam onto the sample and have acquired structural information of the sample and acquiring an image of the sample about a viewing area and an irradiation area changing section for changing the position of the irradiation area with respect to the viewing area. | 10-16-2008 |
20080265159 | Sample surface inspection apparatus and method - The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t | 10-30-2008 |
20080308729 | Apparatus for inspection with electron beam, method for operating same, and method for manufacturing semiconductor device using former - A substrate inspection apparatus | 12-18-2008 |
20080315090 | Objective lens, electron beam system and method of inspecting defect - An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis. | 12-25-2008 |
20080315095 | Electron beam apparatus, a device manufacturing method using the same apparatus, a pattern evaluation method, a device manufacturing method using the same method, and a resist pattern or processed wafer evaluation method - An object of the present invention is to provide an electron beam apparatus, in which a plurality of electron beams, e.g., four electron beams, is produced for one optical axis with a relatively high current achieved for each electron beam. | 12-25-2008 |
20090014649 | ELECTRON BEAM APPARATUS - Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator ( | 01-15-2009 |
20090026368 | APPARATUS AND METHOD FOR INSPECTING SAMPLE SURFACE - Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. | 01-29-2009 |
20090032708 | Inspection system by charged particle beam and method of manufacturing devices using the system - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-05-2009 |
20090050822 | Electron beam apparatus and method of manufacturing semiconductor device using the apparatus - The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system. | 02-26-2009 |
20090069252 | C-GLYCOSIDE DERIVATIVES AND SALTS THEREOF - The present invention provides C-glycoside derivatives and salts thereof, wherein B ring is bonded to A ring via —X— and A ring is directly bonded to the glucose residue, and it is usable as a Na | 03-12-2009 |
20090101816 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 04-23-2009 |
20090212213 | PROJECTION ELECTRON BEAM APPARATUS AND DEFECT INSPECTION SYSTEM USING THE APPARATUS - A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun | 08-27-2009 |
20090218506 | ELECTRON BEAM APPARATUS - An electron beam emitted from an electron gun (G) forms a reduced image on a sample (S) through a non-dispersion Wien-filter ( | 09-03-2009 |
20100019149 | MAPPING-PROJECTION-TYPE ELECTRON BEAM APPARATUS FOR INSPECTING SAMPLE BY USING ELECTRONS EMITTED FROM THE SAMPLE - An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface. | 01-28-2010 |
20100108918 | EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS - An extreme ultraviolet light source apparatus comprises a target supply unit supplying a target into a vacuum chamber, a laser oscillator outputting a laser light into the vacuum chamber, a collector mirror outputting an extreme ultraviolet light outside by reflecting the extreme ultraviolet light emitted from the target being ionized as a plasma by irradiation with the laser light at a plasma luminescence point in the vacuum chamber, and an ion debris removal unit at least a part of which is located in an obscuration region including the plasma luminescence point. | 05-06-2010 |
20100237243 | Testing apparatus using charged particles and device manufacturing method using the testing apparatus - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 09-23-2010 |
20110104830 | APPARATUS FOR INSPECTION WITH ELECTRON BEAM, METHOD FOR OPERATING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING FORMER - A substrate inspection apparatus | 05-05-2011 |
20110155905 | SPECIMEN OBSERVATION METHOD AND DEVICE, AND INSPECTION METHOD AND DEVICE USING THE METHOD AND DEVICE - A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less. | 06-30-2011 |
20110266468 | EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS - An extreme ultraviolet light source apparatus comprises a target supply unit supplying a target into a vacuum chamber, a laser oscillator outputting a laser light into the vacuum chamber, a collector mirror outputting an extreme ultraviolet light outside by reflecting the extreme ultraviolet light emitted from the target being ionized as a plasma by irradiation with the laser light at a plasma luminescence point in the vacuum chamber, and an ion debris removal unit at least a part of which is located in an obscuration region including the plasma luminescence point. | 11-03-2011 |
20110303992 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device includes a substrate, an element formed on the substrate, a nitride film formed on the substrate, a anti-peel film formed on the nitride film, and a molded resin covering the anti-peel film and the element. The anti-peel film has residual compressive stress. | 12-15-2011 |
20120032079 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-09-2012 |
20120074316 | ELECTRO-OPTICAL INSPECTION APPARATUS AND METHOD WITH DUST OR PARTICLE COLLECTION FUNCTION - An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage ( | 03-29-2012 |
20120160029 | ACCELERATION SENSOR - An acceleration sensor of the present invention comprises a first mass body which is held by first beams and can be displaced by acceleration, fixed electrodes which are so arranged as to convert the displacement of the first mass body into the quantity of electricity, and a displaceability changing member for changing the displaceability of the first mass body when the displacement of the first mass body exceeds a predetermined range. | 06-28-2012 |
20120235036 | INSPECTION DEVICE - An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object. | 09-20-2012 |
20130032716 | ELECTRON BEAM APPARATUS AND A DEVICE MANUFACTURING METHOD BY USING SAID ELECTRON BEAM APPARATUS - An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction. | 02-07-2013 |
20130225814 | OPTICALLY ACTIVE DIBENZYLAMINE DERIVATIVE, AND METHOD FOR PREPARING THEREOF - Substantially optically pure (S)-trans-{4-[({2-[({1-[3,5-bis(trifluoromethyl)phenyl]ethyl}{5-[2-(methylsulfonyl)ethoxy]pyrimidin-2-yl}amino)methyl]-4-(trifluoromethyl)phenyl}(ethyl)amino)methyl]cyclohexyl}acetic acid, or a salt thereof, or a solvate thereof, which has actions of reducing amount of PCSK9 protein and increasing amount of LDL receptor. | 08-29-2013 |
20140014848 | INSPECTION DEVICE - An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object. | 01-16-2014 |
20140034831 | INSPECTION SYSTEM BY CHARGED PARTICLE BEAM AND METHOD OF MANUFACTURING DEVICES USING THE SYSTEM - An inspection apparatus by an electron beam comprises: an electron-optical device | 02-06-2014 |
20140091215 | ELECTRO-OPTICAL INSPECTION APPARATUS AND METHOD WITH DUST OR PARTICLE COLLECTION FUNCTION - An electro-optical inspection apparatus is provided that is capable of preventing adhesion of dust or particles to the sample surface as much as possible. A stage ( | 04-03-2014 |
20140158885 | TESTING APPARATUS USING CHARGED PARTICLES AND DEVICE MANUFACTURING METHOD USING THE TESTING APPARATUS - A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source | 06-12-2014 |
20140367570 | SUBSTRATE INSPECTION METHOD AND A SUBSTRATE PROCESSING METHOD - There is provided a substrate inspection method. The method includes: maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; positioning the substrate on a stage in the inspection chamber; selecting an evaluation parameter according to a kind of said processing apparatus; and determining inspection regions of the substrate so that an inspection time required per a lot of the substrate is equal to a processing time spent for said processing step required per a lot of the substrate. The method also includes radiating a primary electron beam from an electron gun; deflecting the primary electron beam with an E*B unit; irradiating said inspection regions of the substrate with the deflected primary electron beam; and projecting secondary electrons emitted from said substrate through the E*B unit onto a detector with a secondary optical system. | 12-18-2014 |
20150060666 | SPECIMEN OBSERVATION METHOD AND DEVICE USING SECONDARY EMISSION ELECTRON AND MIRROR ELECTRON DETECTION - A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less. | 03-05-2015 |