Patent application number | Description | Published |
20090221142 | Method of forming a metal bump on a semiconductor device - An uppermost one of multilayered electrode pads, on which a bump and a plating coat will be formed, is made of metal having high ionization tendency, particularly, Al. On the other hand, an uppermost one of multilayered electrode pads, on which none of the bump and the plating coat will be formed, is made of metal having low ionization tendency, particularly, Cu. | 09-03-2009 |
20100003202 | Ultraviolet screening agent for cosmetics and cosmetics using the same - An ultraviolet screening agent for cosmetics, including polymer-coated metal oxide fine particles produced by coating, with silica as a first layer, the surface of each of at least one kind of metal oxide fine particles selected from the group consisting of zinc oxide fine particles, titanium oxide fine particles, cerium oxide fine particles, zirconium oxide fine particles, and iron oxide fine particles, a primary particle diameter of which fine particles is not smaller than 1 nm and not greater than 100 nm, and coating the outside of the first layer with a polymer as a second layer; and cosmetics using the ultraviolet screening agent. | 01-07-2010 |
20100091270 | Optical property measurement apparatus - An optical property measurement apparatus includes: a main body which includes a plane-shape surface that is so disposed as to face the display portion; an optical sensor which receives light directed from an opening that is formed through the plane-shape surface; and a support portion which is disposed on a side of the plane-shape surface and keeps a constant distance between the display portion and the plane-shape surface; wherein a light shield portion that is so disposed as to enclose a circumferential area of the opening of the plane-shape surface and shields entrance of light from a region other than a measurement target region of the display portion when the optical property is measured. | 04-15-2010 |
Patent application number | Description | Published |
20100040100 | SEMICONDUCTOR LASER - A semiconductor laser includes an active layer, a first GaAs layer formed on the active layer, the first GaAs layer including a plurality of recessed portions periodically arranged, each of the recessed portions including a bottom surface of a (100) crystal surface and a slope including a (111) A crystal surface at least in parts, the recessed portion being disposed in contact with each other or with a minimal gap between each of adjacent ones of the recessed portions, the width of the bottom surface being greater than the minimal gaps, an InGaP layer formed on the recessed portion, and a second GaAs layer formed on the InGaAs layer over the recessed portion. | 02-18-2010 |
20110229079 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers. | 09-22-2011 |
20140321493 | OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device, includes: a plurality of first diffraction grating layers disposed at a spacing from each other along first direction above first semiconductor layer, length of a lower surface of each of a plurality of first diffraction gratings along first direction being longer than a length of an upper surface of first diffraction grating; second diffraction grating layer disposed along first direction above first semiconductor layer, first and second diffraction grating layers being alternately disposed at a spacing from each other, a length of an upper surface of second diffraction grating layer along first direction being longer than the length of a lower surface of second diffraction layer; a diffraction grating including first and second diffraction grating layers; a second semiconductor layer disposed between first and second diffraction grating layers and under second diffraction grating layer; and third semiconductor layer disposed on first and second diffraction grating layers. | 10-30-2014 |
Patent application number | Description | Published |
20090299515 | COATING AND DEVELOPING APPARATUS, COATING AND DEVELOPING METHOD, AND STORAGE MEDIUM - When a product substrate passes a reference module which is an n-th module ahead of an inspection module in a transfer path, an inspection reservation signal for performing an inspection to a lot to which the product substrate belongs is outputted to the inspection module. When the inspection module is in trouble, the output of an inspection reservation signal for a product substrate is forbidden, and the product substrates to be transferred to the inspection module are transferred to a module which is next to the inspection module in a transfer order. When the trouble of the inspection module has been resolved and a substrate for confirmation inspection is preferentially transferred to the inspection module, an inspection reservation signal for the substrate for confirmation inspection is outputted, the substrate for confirmation inspection is transferred to the inspection module, and the confirmation inspection for the inspection module is performed. | 12-03-2009 |
20110206486 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Even when a module constituting a multi-module becomes an unavailable module, transfer of substrates can be promptly performed, while restricting generation of inferior products. When a destination module of a multi-module becomes unavailable before a substrate is transferred to the destination module, a destination of the substrate is changed to a module to which a substrate subsequent to the substrate is to be loaded. Upon generation of an unavailable module, before the transfer unit accesses the module on an upstream end of the transfer cycle, the transfer cycle proceeds until a precedent substrate becomes ready to be unloaded from the changed destination module. Alternatively, upon generation of an unavailable module, when the transfer unit is located on an upstream side of the unavailable module in the transfer cycle, the transfer operation of the transfer unit is made standby until a precedent substrate becomes ready to be unloaded in the changed destination module. | 08-25-2011 |
20110208344 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing system, which repeats a carrying cycle in which a substrate is carried sequentially in carrying order indicated by module numbers assigned to the modules, respectively, from the module of a lower module number to that of a higher module number, is capable of processing substrates at a high throughput even if some module becomes unusable and, thereafter, becomes usable. A controller controls a carrying means such that the carrying means carries a substrate taken out from the module preceding a multimodule unit including a plurality of modules to the module nest in carrying order to the module of the multimodule unit from which a substrate is carried out at time nearest to time when the substrate was carried out from the module preceding the multimodule. | 08-25-2011 |
Patent application number | Description | Published |
20090199052 | Management system, computer system, and method of providing information - A management system includes a plurality of analyzers; and a computer system connected to the analyzers via a network, wherein each of the analyzers comprises: a data transmitter for transmitting data produced by the analyzer to the computer system via the network, and wherein the computer system includes a memory under control of a processor, the memory storing instructions enabling the processor to carry out operations, comprising: (a) receiving a plurality of data transmitted from the data transmitters of the plurality of analyzers; (b) generating an aggregate result used for determining a determination condition for making a determination as to whether or not a notification to a user of the analyzer is required based on the plurality of received data; and (c) outputting the aggregate result. A computer system and a method of providing information are also disclosed. | 08-06-2009 |
20150161552 | MANAGEMENT SYSTEM, COMPUTER SYSTEM, AND METHOD OF PROVIDING INFORMATION - A management system includes a plurality of analyzers; and a computer system connected to the analyzers via a network, wherein each of the analyzers comprises: a data transmitter for transmitting data produced by the analyzer to the computer system via the network, and wherein the computer system includes a memory under control of a processor, the memory storing instructions enabling the processor to carry out operations, comprising: (a) receiving a plurality of data transmitted from the data transmitters of the plurality of analyzers; (b) generating an aggregate result used for determining a determination condition for making a determination as to whether or not a notification to a user of the analyzer is required based on the plurality of received data; and (c) outputting the aggregate result. A computer system and a method of providing information are also disclosed. | 06-11-2015 |
Patent application number | Description | Published |
20080247084 | Disk Device, Shutter Control Device, and Computer Program for Shutter Opening/Closing Control - To assuredly determine whether a shutter pinches a disk in a disk device including a shutter at a disk insertion slot. A shutter control device | 10-09-2008 |
20090037943 | Shutter controller, disc device, and computer program for determining that disc is caught - During a process of closing of a shutter of a disk device, a position of the shutter is detected. A first shutter position indicator indicative of a first position of the shutter and a second shutter position indicator indicative of a second position, which is immediately before the first position, are calculated. Whether a disk is pinched by the shutter is determined based on comparison of a predetermined threshold and the difference between the first shutter position indicator and the second shutter position indicator. | 02-05-2009 |
20090046546 | DRIVING DEVICE - A controller | 02-19-2009 |
20110107746 | EXHAUST GAS PURIFICATION DEVICE - An exhaust gas purification device in which catalysts are efficiently activated and in which pressure loss caused by deposition of particulates exhausted from an internal combustion engine is suppressed. The exhaust gas purification device has a first purification section and a second purification section. The first purification section has a metal honeycomb structure where a first oxidation catalyst is carried. The second purification section is placed on the downstream side of the first purification section and has a particulate filter that carries different amounts of second oxidation catalysts on the upstream side and on the downstream side of an exhaust gas route. | 05-12-2011 |
20130027141 | CRYSTAL RESONATOR AND CRYSTAL OSCILLATOR - A crystal resonator comprises a first vibrating region provided on a crystal wafer, a second vibrating region provided on the crystal wafer, the second vibrating region having a different thickness and positive/negative orientation of the X-axis from those of the first vibrating region, and excitation electrodes which are provided respectively on the first vibrating region and the second vibrating region for causing the vibrating regions to vibrate independently. Frequencies that change by different amounts from each other relative to a temperature change can be retrieved from one vibrating region and the other vibrating region. Thus, based on an oscillating frequency of the vibrating region in which a clear frequency change occurs relative to the temperature, the oscillating frequency of the other vibrating region can be controlled. Thereby, increases in the complexity of the crystal oscillator can be suppressed. | 01-31-2013 |
Patent application number | Description | Published |
20110285016 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate and a stress generating film. A first surface of the substrate includes a protruding part at each of two end portions. The substrate includes a semiconductor element. The stress generating film is formed so as to come into contact with a second surface of the substrate that is opposite to the first surface of the substrate. The stress generating film is in a shape which causes a second stress that offsets at least a part of a first stress occurring as a result of bonding between an external substrate and the protruding part. | 11-24-2011 |
20110316154 | SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate having a plurality of electrode pads, a protective film covering the upper surface of the semiconductor substrate and having an opening so that the electrode pad is exposed therethrough, a metal film formed on the electrode pad exposed through the opening, and a bump formed on the metal film. The metal film includes a plurality of grooves radially formed from the center thereof toward the periphery thereof. | 12-29-2011 |
20120153491 | SEMICONDUCTOR DEVICE - A first transistor group, a second transistor group, and an electrode pad are formed on a semiconductor substrate. A first protective film is formed so as to cover the semiconductor substrate except for an upper region of the electrode pad. The second protective film which generates a stress in a projecting direction is formed so as to cover the first protective film except for an upper region of the first transistor group. A transistor ability of the first transistor group is varied to be relatively higher due to a presence of the second protective film, based on a transistor ability of the second transistor group, as a reference. | 06-21-2012 |
Patent application number | Description | Published |
20110317729 | CURRENT DRIVING DEVICE - A current driving device comprises; a three-terminal regulator configuration circuit operative as a three-terminal regulator which drops a voltage of a first electric power supply to a predetermined target output voltage in a state where a main terminal and a control terminal of a power transistor are connected to a main terminal connection terminal and a control terminal connection terminal, respectively; a voltage setting circuit which sets a control voltage corresponding to a target output voltage which is applied from the three-terminal regulator configuration circuit to the control terminal of the power transistor; and a voltage restricting circuit which is connected to the control terminal connection terminal and controls the control voltage applied to the control terminal of the power transistor so that the output voltage of the three-terminal regulator configuration circuit becomes a predetermined voltage or less, upon being supplied with the electric power from the first electric power supply. | 12-29-2011 |
20120229012 | ION SOURCE - An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between. | 09-13-2012 |
20140199492 | ION IMPLANTER AND METHOD OF OPERATING ION IMPLANTER - An ion implanter that introduces a process gas into an ion source, extracts a ribbon-shaped ion beam from the ion source using an extraction electrode system made up of multiple electrodes, and uses the ion beam to irradiate a substrate disposed in a processing chamber during ion implantation processing, and that also introduces a cleaning gas into the ion source and performs cleaning inside said ion source at times other than during ion implantation processing, wherein during the re-initiation of the ion beam upon termination of cleaning, a predetermined voltage is applied to the extraction electrode system and the operating parameters of the ion source are then set to values corresponding to the implantation recipe of the substrate to be processed. | 07-17-2014 |
20150262790 | ION IRRADIATION APPARATUS AND ION IRRADIATION METHOD - An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment. | 09-17-2015 |