Takayuki Miyazaki
Takayuki Miyazaki, Setagaya-Ku JP
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20100238600 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first static actuator having a first drive electrode and a second drive electrode, the first drive electrode and the second drive electrode being capable of coming close to each other upon shifting from an open state to a close state due to an electrostatic attractive force against an elastic force thereof; a detection circuit configured to detect a temperature of the first static actuator; and a drive circuit configured to apply a first voltage between the first drive electrode and the second drive electrode to maintain the first static actuator in the closed state between the first drive electrode and the second drive electrode, and to switch a polarity of the first voltage every first time period. The drive circuit varies a length of the first time period based on a detection result of the detection circuit. | 09-23-2010 |
Takayuki Miyazaki, Kanagawa JP
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20090162130 | Viscous Cosmetic Item - A viscous cosmetic item is provided in which a viscous cosmetic material is contained in a push-out container capable of withdrawing a content is provided wherein the viscous cosmetic item is provided both a container shape capable of applying and manipulating the viscous cosmetic material effectively and a viscosity of the viscous cosmetic material which is suitable to that shape. | 06-25-2009 |
20100234321 | OILY COSMETIC AND COSMETIC PRODUCT - A composition is prepared to comprise (a) 50 to 99% by weight of an oily phase that is a liquid at 25° C., (b) 1 to 7% by weight of dextrin (palmitate/2-ethylhexanoate), and (c) 0.001 to 10% by weight of a coloring material and/or pearlescent agent other than a laminated film powder are contained, followed by making the viscosity thereof at 30° C. when measured with a BL viscometer to be 3,000 to 20,000 mPa·s. In addition, (d) silicic acid anhydride and/or hydrophobized silicic acid anhydride is added thereto. | 09-16-2010 |
Takayuki Miyazaki, Tokyo JP
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20090072630 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING ELECTROSTATIC ACTUATOR - A semiconductor device controls an electrostatic actuator having first and second electrodes. A voltage generation unit generates different types of voltages applied to the first and second electrodes. A control unit controls voltages generated by the voltage generation unit to be applied to the first and second electrodes. A capacitance detection unit detects a voltage of the first or second electrode to detect a capacitance between the first and second electrodes. The control unit applies a first voltage between the first and second electrodes and then a second voltage smaller than the first voltage between the first and second electrodes. Thereafter, the control unit switches one of the first electrode or the second electrode to a high impedance state and then changes a voltage applied to the other. The capacitance detection unit detects the amount of change in voltage of the first or second electrode to detect a capacitance between the first and second electrodes. | 03-19-2009 |
20090309640 | SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING A MASTER-SLAVE FLIP-FLOP - A semiconductor integrated circuit having a flip-flop with improve soft error resistance, including a controller which controls a clock signal generating circuit to output a first clock signal and a second clock signal with a timing so that logic of data retained in a first data retaining terminal becomes identical to logic of data retained in a third data retaining terminal, and then turns on a first switching circuit to connect between the first data retaining terminal and the first data retaining terminal. | 12-17-2009 |
20100039135 | SEMICONDUCTOR INTEGRATED CIRCUIT - Semiconductor integrated circuit has a control circuit. The control circuit causes the clock signal generating circuit to control the first clock signal and the second clock signal to make a logic of data held by the first data holding terminal and a logic of data held by the second data holding terminal equal to each other, and switches on the switch circuit, and the error detection circuit senses a logic of the first data holding terminal and a logic of the second data holding terminal after switching on the switching circuit. | 02-18-2010 |
20100157693 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a memory cell array including a plurality of word lines, a plurality of bit lines intersecting the plurality of word lines, and a plurality of binary-data holding memory cells arranged at the intersections of the word lines and the bit lines; and a control unit operative to change in the storage capacity of the memory cell array and change in the address space required for access to the memory cell based on a control signal. | 06-24-2010 |
20120316291 | BLOCK POLYISOCYANATE COMPOSITION AND COATING COMPOSITION CONTAINING SAME - Provided is a block polyisocyanate composition comprising at least one block polyisocyanate represented by formula (I): R-(A) | 12-13-2012 |
20130106318 | SEMICONDUCTOR DEVICE AND DRIVE METHOD OF ELECTROSTATIC ACTUATOR | 05-02-2013 |
20130154606 | POWER CIRCUIT - According to one embodiment, there is provided a power circuit including a DC/DC converter, an A/D converter, a control unit, a determining unit, and a conversion timing adjusting unit. The determining unit determines whether a transition timing of the conversion candidate timing signal overlaps a transition timing of the first switching signal or a transition timing of the second switching signal. The conversion timing adjusting unit adjusts the conversion candidate timing signal so that the transition timing of the conversion candidate timing signal does not overlap the transition timing of the first switching signal and the transition timing of the second switching signal when the transition timing of the conversion candidate timing signal overlaps the transition timing of the first switching signal or the transition timing of the second switching signal to thereby generate the conversion timing signal. | 06-20-2013 |
20130303258 | IMAGE PROCESSOR AND METHOD THEREFOR - By rendering lower half of 30 FPS in the processing of even numbered frame of 60 fps and rendering upper half of 30 fps in the processing of odd numbered frame, the processing load of the processor | 11-14-2013 |
20140028270 | SYNCHRONOUS RECTIFICATION TYPE POWER CIRCUIT AND METHOD OF ADJUSTING THE SAME - According to one embodiment, a synchronous rectification type power circuit includes a first power terminal to which a voltage on a high potential side is supplied, a second power terminal to which a voltage on a low potential side is supplied, an output terminal that outputs an output voltage to a load having an inductance and a capacitor, a first switch unit connected between the first power terminal and the output terminal, a second switch unit connected between the second power terminal and the output terminal, a control signal generating circuit which controls ON/OFF of the first and second switch units, and a control circuit that compares the output voltage with a predetermined reference voltage for a predetermined period when the second switch unit is turned OFF. A timing for turning OFF the second switch unit is adjusted based on a result of the comparison. | 01-30-2014 |
20140268999 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, provided is a semiconductor storage device that includes a control circuit to control the voltage that is applied to the memory cell. The control circuit is configured to execute a reset operation that applies a reset voltage of a first polarity to a selected memory cell that is connected to a selected first wire and a selected second wire during a reset operation. The control circuit is configured to execute a cancel operation that applies a cancel voltage of a second polarity that is opposite to the first polarity to an unselected memory cell and at the same time can execute a verify operation that reads out the state of the selected memory cell by applying a readout voltage of the second polarity to the selected memory cell. The cancel voltage and the readout voltage are the same voltage value. | 09-18-2014 |
20150137778 | DC-DC CONVERTER - According to one embodiment, a DC-DC converter includes a comparator circuit that compares a feedback voltage of an output voltage with a reference voltage and a control circuit that controls an output voltage based on an output signal of the comparator circuit. The comparator circuit performs a discrete-time operation in response to a clock signal, and a frequency of the clock signal is adjusted according to a load condition. | 05-21-2015 |
Takayuki Miyazaki, Fuchu-Shi JP
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20090121662 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING ELECTROSTATIC ACTUATOR - A semiconductor device controls an electrostatic actuator having first and second electrodes formed so as to come close to each other when transition occurs from opened state to closed state by electrostatic attraction against elastic force. The semiconductor device includes: a voltage generation unit generating different applied voltages to be applied to the first and second electrodes; a control unit controlling the voltage generation unit to switch the applied voltages; and a detection unit detecting voltage of the first or second electrode or a rate of change in the voltage. The control unit controls a target voltage of the voltage generation unit to be switched from a first voltage to a second voltage lower than the first voltage according to a detection output by the detection unit. | 05-14-2009 |
Takayuki Miyazaki, Osaka JP
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20120037833 | VALVE FOR POWDER - A powder valve is propose which is simple in structure and small in size, which can prevent powder from getting stuck in the valve, and can withstand high feed pressure. The valve includes a valve casing | 02-16-2012 |
Takayuki Miyazaki, Yokohama-Shi JP
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20120312316 | MAKEUP COSMETIC AND MAKEUP KIT COMPRISING THE MAKEUP COSMETIC AND A TOP COATING AGENT - Provided is a makeup cosmetic which has a good feeling of use, without showing tautness or stiffness as in the case of using a silicone-based resin film or an offensive odor as in the case of using polyisoprene, and exhibits a good effect of preventing color migration. This makeup cosmetic is characterized by comprising polyisobutylene having a relative mass of 30,000-100,000 and a volatile hydrocarbon oil. Also provided are a top coating agent, which can be appropriately applied on the aforesaid makeup cosmetic, imparts glossiness and shows little color migration or blurring, a makeup kit comprising the aforesaid makeup cosmetic and the top coating agent, and a makeup method using the makeup kit. | 12-13-2012 |
Takayuki Miyazaki, Chiyoda-Ku JP
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20130113349 | HOUSING FOR ELECTRONIC DEVICE UNIT - A housing for an electronic device unit includes a first case and a second case that are formed in a shape of a box with one of respective surfaces thereof being opened and are formed to be a box body. The housing includes an insulating plate that extends from the opening part of the first case to a side of the second case and overlaps with a wall surface of the second case. An engaging convex part is formed on a surface where the insulating plate is overlapped and an engaging hole that engages with the engaging convex part to regulate separation of the first case and the second case is formed. The insulating plate is in a shape in which an edge of the insulating plate spreads with a predetermined width from an opening edge where the first case and the second case are butted and the engaging hole. | 05-09-2013 |
Takayuki Miyazaki, Setagaya JP
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20150077177 | REFERENCE VOLTAGE GENERATING APPARATUS AND SWITCHING POWER APPARATUS - There is provided a reference voltage generating apparatus including: a reference voltage source, a voltage retaining circuit, a switch and a controller. The reference voltage source generates a reference voltage. The voltage retaining circuit includes a first element circuit and a second element circuit, and the voltage retaining circuit outputs a voltage of a connection node between a first terminal of the first element circuit and a second terminal of the second element circuit. The switch is connected between the connection node and the reference voltage source. The controller controls the reference voltage source and the switch. The first element circuit includes at least a resistance component and the first element circuit is supplied with a first voltage at a third terminal and the second element circuit includes a resistance component and a capacity component and the second element circuit is supplied with a second voltage at a fourth terminal. | 03-19-2015 |
Takayuki Miyazaki, Setagaya Tokyo JP
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20150162083 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, provided is a semiconductor storage device that includes a control circuit to control the voltage that is applied to the memory cell. The control circuit is configured to execute a reset operation that applies a reset voltage of a first polarity to a selected memory cell that is connected to a selected first wire and a selected second wire during a reset operation. The control circuit is configured to execute a cancel operation that applies a cancel voltage of a second polarity that is opposite to the first polarity to an unselected memory cell and at the same time can execute a verify operation that reads out the state of the selected memory cell by applying a readout voltage of the second polarity to the selected memory cell. The cancel voltage and the readout voltage are the same voltage value. | 06-11-2015 |