Patent application number | Description | Published |
20090220890 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY - A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). | 09-03-2009 |
20090263742 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified resist composition comprising:
| 10-22-2009 |
20090269695 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified resist composition comprising:
| 10-29-2009 |
20100062365 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified positive composition comprising: | 03-11-2010 |
20100167199 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - A chemically amplified positive resist composition comprising: a resin comprising a structural unit having an acid-labile group in a side chain and an acid generator wherein the resin contains 40 to 90% by mole of the structural unit having an acid-labile group in a side chain based on all the structural units and the structural unit having an acid-labile group in a side chain contains a structural unit represented by the formula (I): | 07-01-2010 |
20100279226 | RESIST PROCESSING METHOD - The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern. | 11-04-2010 |
20110123926 | PHOTORESIST COMPOSITION - The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): | 05-26-2011 |
20110171586 | RESIST PROCESSING METHOD - A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern. | 07-14-2011 |