Patent application number | Description | Published |
20100225774 | SOLID-STATE IMAGE PICKUP ELEMENT, A METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS USING THE SAME - Disclosed herein is a solid-state image pickup element, including a plurality of pixels each having a photoelectric conversion portion for converting a quantity of incident light into an electric signal, and a plurality of pixel transistors; wiring layers formed on one surface side of a semiconductor substrate having the plurality of pixels formed therein, a light made incident from a side opposite to the one surface having the wiring layers formed thereon being received by corresponding one of the photoelectric conversion portions; a scribe line formed in a periphery of a pixel portion composed of the plurality of pixels; and square-shaped termination detecting portions each having higher hardness than that of the semiconductor substrate and formed in the scribe line; wherein each of the square-shaped termination detecting portions has a side parallel with a direction of the scribe line of the semiconductor substrate. | 09-09-2010 |
20100230773 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 09-16-2010 |
20120086845 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate. | 04-12-2012 |
20120217602 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer. | 08-30-2012 |
20120313211 | SOLID-STATE IMAGE PICKUP DEVICE AND A METHOD OF MANUFACTURING THE SAME - A solid-state image pickup device includes: a silicon layer; a pixel portion formed in the silicon layer for processing and outputting signal charges obtained by carrying out photoelectric conversion for incident lights; an alignment mark formed in a periphery of the pixel portion and in the silicon layer; and a contact portion through which a first electrode within a wiring layer formed on a first surface of the silicon layer, and a second electrode formed on a second surface opposite to the first surface of the silicon layer through an insulating film are connected, wherein the alignment mark and the contact portion are formed from conductive layers made of the same conductive material and formed within respective holes each extending completely through the silicon layer through respective insulating layers made of the same material. | 12-13-2012 |
20130015513 | SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICEAANM Kido; HideoAACI KanagawaAACO JPAAGP Kido; Hideo Kanagawa JPAANM Enomoto; TakayukiAACI KanagawaAACO JPAAGP Enomoto; Takayuki Kanagawa JPAANM Togashi; HideakiAACI KanagawaAACO JPAAGP Togashi; Hideaki Kanagawa JP - A solid-state imaging device includes: a first photodiode made up of a first first-electroconductive-type semiconductor region formed on a first principal face side of a semiconductor substrate, and a first second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the first first-electroconductive-type semiconductor region; a second photodiode made up of a second first-electroconductive-type semiconductor region formed on a second principal face side of the semiconductor substrate, and a second second-electroconductive-type semiconductor region formed within the semiconductor substrate adjacent to the second first-electroconductive-type semiconductor region; and a gate electrode formed on the first principal face side of the semiconductor substrate; with impurity concentration of a connection face between the second first-electroconductive-type semiconductor region and the second second-electroconductive-type semiconductor region being equal to or greater than impurity concentration of a connection face of an opposite layer of the second first-electroconductive-type semiconductor region of the second second-electroconductive-type semiconductor region. | 01-17-2013 |
20140054662 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate | 02-27-2014 |
20150102446 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion portions each provided in a semiconductor substrate and receives incident light through a light sensing surface, and a pixel separation portion provided to electrically separate a plurality of pixels. At least a pinning layer and a light shielding layer are provided in an inner portion of a trench provided on a side portion of each of the photoelectric conversion portions in an incident surface side, the trench includes a first trench and a second trench formed to be wider than the first trench in a portion shallower than the first trench, the pinning layer is formed in an inner portion of the first trench to cover an inside surface of the second trench, and the light shielding layer is formed to bury an inner portion of the second trench at least via the pinning layer. | 04-16-2015 |