Patent application number | Description | Published |
20090284942 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device fabrication method includes: forming an elongated hole | 11-19-2009 |
20100044880 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE - A semiconductor device includes a multilayer wiring substrate having a plurality of inner wiring layers and a semiconductor chip mounted on the multilayer wiring substrate. The multilayer wiring substrate has a groove formed in the bottom surface. The groove does not reach the lowermost of the inner wiring layers. | 02-25-2010 |
20100230801 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor device including an interconnect substrate having a cavity structure and a semiconductor element mounted on a bottom part of the cavity structure; and a second semiconductor device provided on and connected to the first semiconductor device via connection terminals. A sealing material is provided between the first semiconductor device and the second semiconductor device. A sloped portion is formed, at a corner portion at which the bottom part and a side wall of the cavity structure in the first semiconductor device meets, to be sloped toward a center part of the cavity structure and have a tapered shape which becomes continuously wider in the direction from an upper part to a lower part. | 09-16-2010 |
20100283129 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An upper surface of a semiconductor substrate includes a first portion where a dielectric film is provided, and a second portion where the dielectric film is not provided, wherein the second portion is located in the periphery of the first portion. The upper surface of the semiconductor substrate is covered with a sealing resin. | 11-11-2010 |
20100295186 | SEMICONDUCTOR MODULE FOR STACKING AND STACKED SEMICONDUCTOR MODULE | 11-25-2010 |
20130299957 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first extended semiconductor chip including a first semiconductor chip and an extension extending outwardly from a side surface of the first semiconductor chip. The semiconductor device also includes a second semiconductor chip mounted above the first extended semiconductor chip and electrically connected with the first semiconductor chip. The first extended semiconductor chip includes a first extension electrode pad provided above the extension and electrically connected with an electrode of the first semiconductor chip. | 11-14-2013 |
20140103504 | SEMICONDUCTOR DEVICE - A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure. | 04-17-2014 |
20140124911 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip; an extension formed at a side surface of the first semiconductor chip; a connection terminal formed on the first semiconductor chip; a re-distribution part formed over the first semiconductor chip and the extension and including an interconnect connected to the connection terminal and an insulating layer covering the interconnect; and an electrode formed above the extension on a surface of the re-distribution part and connected to the interconnect at an opening of the insulating layer. The electrode is mainly made of a material having an elastic modulus higher than that of the interconnect. The electrode includes a bonding region where the electrode is bonded to the interconnect at the opening, and an outer region closer to an end part of the extension. The interconnect is formed so as not to continuously extend to a position right below the outer region. | 05-08-2014 |
20140327157 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A lamination structure includes a first semiconductor chip and a second semiconductor chip stacked via a bonding section so that a rear surface of the first semiconductor chip faces the main surface of the second semiconductor chip. At least a part of a side surface of the first semiconductor chip are covered with a first resin, a distribution layer is formed on the plane formed of the main surface of the first semiconductor chip and a surface of the first resin. At least part of electrodes existing in the main surface of the second semiconductor chip is electrically connected to at least part of first external electrodes formed on the distribution layer via the penetration electrodes that penetrate the first semiconductor chip. | 11-06-2014 |