Patent application number | Description | Published |
20090278239 | Silicon Wafer and Production Method Thereof - In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 μm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5×10 | 11-12-2009 |
20100009521 | METHOD OF PRODUCING SEMICONDUCTOR WAFER - There is provided a production method in which the beveling step conducted for preventing the cracking or chipping in a raw wafer during the grinding can be omitted when the raw wafer cut out from a crystalline ingot is processed into a double-side mirror-finished semiconductor wafer and a semiconductor wafer can be obtained cheaply by shortening the whole of the production steps for the semiconductor wafer and decreasing the machining allowance of silicon material in the semiconductor wafer to reduce the kerf loss of the semiconductor material as compared with the conventional method. | 01-14-2010 |
20100290971 | SILICON WAFER AND METHOD FOR PRODUCING THE SAME - It is possible to provide a silicon wafer that as well as being free of COPs and dislocation clusters, has defects (grown-in defects including silicon oxides), which are not overt in an as-grown state, such as OSF nuclei and oxygen precipitate nuclei existing in the PV region, to be vanished or reduced, by adopting a method for producing a silicon wafer, the method comprising the steps of: growing a single crystal silicon ingot by the Czochralski method; cutting a silicon wafer out of the ingot; subjecting the wafer to an RTP at 1,250° C. or more for 10 seconds or more in an oxidizing atmosphere; and removing a grown-in defect region including silicon oxides in the vicinity of wafer surface layer after the RTP. | 11-18-2010 |
20100309461 | METHOD FOR JUDGING WHETHER SEMICONDUCTOR WAFER IS NON-DEFECTIVE WAFER BY USING LASER SCATTERING METHOD - A semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out, and a judgment as to whether a semiconductor wafer is a non-defective wafer is made visually based on a haze map of the semiconductor wafer subjected to the sorting. Moreover, a semiconductor wafer whose number of LPDs per wafer is equal to or smaller than a predetermined number is sorted out. Then, from the semiconductor wafers subjected to the sorting, a semiconductor wafer whose in-plane standard deviation and in-plane average value of the haze signals in a wafer plane have a specific relationship is sorted out, and this semiconductor wafer is judged to be a non-defective wafer. In this way, a method for judging whether a semiconductor wafer is a non-defective wafer or a defective wafer, the method that can make a judgment more uniform and accurate without dependence on the difference in the S/N ratio between inspection apparatuses using a laser scattering method, is provided. | 12-09-2010 |
20120005509 | Method and Apparatus for Performing Energy Management via a Sub-System - Various methods for performing energy management via a sub-system are provided. One example method includes receiving a user input while a main processing system is in a power saving mode and buffering a representation of the user input. The example method further includes, in response to receiving the user input, triggering a wake up of a main processing system from the power saving mode, and causing transmission of the representation of the user input to the main processing system for processing. Similar and related example methods and example apparatuses are also provided. | 01-05-2012 |
20120244703 | TRAY FOR CVD AND METHOD FOR FORMING FILM USING SAME - A tray for film formation by a CVD method includes a tray main body ( | 09-27-2012 |
20140202364 | METHOD OF WASTE MELTING TREATMENT - A waste-melting method, in which waste is fed into a waste-melting furnace ( | 07-24-2014 |
20160053992 | WASTE GASIFICATION MELTING APPARATUS AND WASTE GASIFICATION MELTING METHOD USING THE SAME - Problem to be Solved | 02-25-2016 |
20160093599 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip and a second semiconductor chip, and wherein the first semiconductor chip includes a plurality of first bonding pads, and the second semiconductor chip includes a plurality of second bonding pads for coupling respectively to the first bonding pads by wire-bonding coupling and at least one third bonding pad for enabling relay coupling of a corresponding second bonding pad to at least one predetermined first bonding pad which is arranged along the second bonding pads and included in the first bonding pads without crossing another wire in the wire-bonding coupling. | 03-31-2016 |