Patent application number | Description | Published |
20080314870 | Substrate Processing Method, Substrate Processing Apparatus, and Control Program - This invention provides a substrate processing method including a step of covering in advance the surface of a substrate W with water ( | 12-25-2008 |
20090067959 | Substrate processing apparatus, substrate transfer apparatus, substrate clamp apparatus, and chemical liquid treatment apparatus - The present invention relates to a substrate processing apparatus which can improve a tact time of substrate processing. A polishing apparatus as the substrate processing apparatus includes plural polishing sections ( | 03-12-2009 |
20090236786 | HAND HAVING ROCKING MECHANISM AND SUBSTRATE DELIVERING DEVICE HAVING THE SAME | 09-24-2009 |
20090305612 | Substrate processing apparatus, substrate processing method, substrate holding mechanism, and substrate holding method - An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates. | 12-10-2009 |
20100154837 | Liquid-scattering prevention cup, substrate processing apparatus and method for operating the apparatus - A liquid-scattering prevention cup, provided in a substrate processing apparatus, is capable of attaching a hydrophilic member, such as a PVA sponge, to an inner surface of a liquid-scattering prevention cup body easily and efficiently. The liquid-scattering prevention cup includes a liquid-scattering prevention cup body, and a liquid-scattering prevention sheet having a surface hydrophilic material layer, attached to an entire area or a predetermined area of the inner surface of the liquid-scattering prevention cup body. The liquid-scattering prevention sheet has been attached to the liquid-scattering prevention cup body by an attachment such that the hydrophilic material layer is exposed. | 06-24-2010 |
20100221432 | SUBSTRATE PROCESSING METHOD AND APPARATUS - A substrate processing method and apparatus can securely carry out a pre-plating treatment that enables uniform plating in the necessary area of the surface of a substrate. The substrate processing method carries out a cleaning treatment and a catalyst-imparting treatment of a surface of a substrate as pre-plating treatments and then electroless plates a metal film on the catalyst-imparted surface of the substrate. The cleaning treatment is carried out in a wider area of the surface of the substrate than that area to which a catalyst is imparted by the catalyst-imparting treatment. | 09-02-2010 |
20110094442 | SUBSTRATE HOLDING APPARATUS, SUBSTRATE HOLDING METHOD, AND SUBSTRATE PROCESSING APPARATUS - A substrate holding apparatus can meet the request for a smaller-sized compact apparatus while ensuring a sufficient immersion depth of a substrate in a processing liquid. The substrate holding apparatus includes: a substrate holder for supporting a substrate (W) by bringing a peripheral portion of a surface of the substrate (W) into contact with a first sealing member; and a substrate pressing section for lowering relative to the substrate holder so as to press the substrate (W) held by the substrate holder downward, thereby bringing a first sealing member into pressure contact with the substrate (W). The substrate pressing section is provided with a second ring-shaped sealing member which makes pressure contact with an upper surface of a ring-shaped holding section of the substrate holder, thereby sealing the peripheral region of the substrate pressing section. | 04-28-2011 |
20110168214 | SUBSTRATE HOLDING ROTATING MECHANISM, AND SUBSTRATE PROCESSING APPARATUS - A substrate holding rotating mechanism is used to hold and rotate a substrate to be processed. The substrate holding rotating mechanism according to the present invention includes at least three spindles, clamp rollers mounted respectively on the spindles for holding a periphery of a substrate, a rotating device for rotating at least one of the clamp rollers, at least one base member on which at least one of the spindles is installed, and a rotational mechanism adapted to allow the base member to be rotatable. | 07-14-2011 |
20110203518 | SUBSTRATE PROCESSING METHOD AND APPARATUS - A substrate processing method and apparatus can securely carry out a pre-plating treatment that enables uniform plating in the necessary area of the surface of a substrate. The substrate processing method carries out a cleaning treatment and a catalyst-imparting treatment of a surface of a substrate as pre-plating treatments and then electroless plates a metal film on the catalyst-imparted surface of the substrate. The cleaning treatment is carried out in a wider area of the surface of the substrate than that area to which a catalyst is imparted by the catalyst-imparting treatment. | 08-25-2011 |
20110289795 | SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM - A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ. | 12-01-2011 |
20120141246 | SUBSTRATE HOLDING APPARATUS, SUBSTRATE HOLDING METHOD, AND SUBSTRATE PROCESSING APPARATUS - A substrate holding apparatus can meet the request for a smaller-sized compact apparatus while ensuring a sufficient immersion depth of a substrate in a processing liquid. The substrate holding apparatus includes: a substrate holder for supporting a substrate (W) by bringing a peripheral portion of a surface of the substrate (W) into contact with a first sealing member; and a substrate pressing section for lowering relative to the substrate holder so as to press the substrate (W) held by the substrate holder downward, thereby bringing a first sealing member into pressure contact with the substrate (W). The substrate pressing section is provided with a second ring-shaped sealing member which makes pressure contact with an upper surface of a ring-shaped holding section of the substrate holder, thereby sealing the peripheral region of the substrate pressing section. | 06-07-2012 |
20120193506 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE TRANSFER APPARATUS, SUBSTRATE CLAMP APPARATUS, AND CHEMICAL LIQUID TREATMENT APPARATUS - The present invention relates to a substrate processing apparatus which can improve a tact time of substrate processing. A polishing apparatus as the substrate processing apparatus includes plural polishing sections each for polishing a semiconductor wafer (W), and a swing transporter for transferring the wafer (W). The swing transporter includes a wafer clamp mechanism adapted to clamp the wafer (W), a vertically moving mechanism for vertically moving the wafer clamp mechanism along a frame of a casing of the polishing section, and a swing mechanism for swinging the wafer clamp mechanism about a shaft adjacent to the frame. | 08-02-2012 |
20130219740 | SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM - A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ. | 08-29-2013 |
20130320636 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus is used for a spin drying apparatus, a pencil-type scrubbing cleaning apparatus, an IPA drying apparatus and the like, which are used as semiconductor wafer processing apparatuses. The substrate processing apparatus includes a substrate stage and a substrate chuck mechanism. The substrate chuck mechanism includes a chuck body having a substrate placing portion configured to place a peripheral portion of a substrate and a guide surface configured to guide an outer circumferential end surface of the substrate and to position the substrate when the substrate is placed on the substrate placing portion, and a chuck claw rotatably supported on the chuck body and configured to hold the peripheral portion of the substrate between the substrate placing portion and the chuck claw by turning the chuck claw inward in a closing direction. The guide surface comprises a first guide surface and a second guide surface which guide the outer circumferential end surface of the substrate and differ in inclinations from each other. | 12-05-2013 |
20140259728 | SUBSTRATE DRYING APPARATUS, SUBSTRATE DRYING METHOD AND CONTROL PROGRAM - A substrate drying apparatus includes a drying gas nozzle configured so that, assuming that a surface WA of the substrate W is a projection plane, regarding the drying gas flow Gf in the nozzle moving direction Dr, a collision position Gfw with the substrate W is located downstream of a projected discharge position Gfv′, the projected discharge position Gfv′ being a discharge position from the drying gas nozzle projected on the projection plane. In a three-dimensional space, the drying gas flow Gf is inclined, such that an angle α formed by an axis Ga of the drying gas flow Gf and a vertical line Wp of the substrate W is in a range from a half contact angle θ/2 to an angle determined by deducting the half contact angle θ/2 from 90°, the half contact angle θ/2 being a half of the contact angle θ. | 09-18-2014 |
20140302676 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, SUBSTRATE HOLDING MECHANISM, AND SUBSTRATE HOLDING METHOD - An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates. | 10-09-2014 |
20150050863 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, SUBSTRATE HOLDING MECHANISM, AND SUBSTRATE HOLDING METHOD - An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates. | 02-19-2015 |