Patent application number | Description | Published |
20090200070 | Cu-BASED WIRING MATERIAL AND ELECTRONIC COMPONENT USING THE SAME - An object of the present invention is to provide an electronic component, including a wiring that contacts a glass or a glass ceramics member, for which a Cu-based wiring material capable of suppressing generation of bubbles in the glass or the glass ceramics member and having excellent migration resistance is used. The present invention provides an electronic component including a wiring that contacts a glass or a glass ceramics member. In the electronic component, the wiring material is formed of a binary alloy made of two elements of Cu and Al, and contains not more than 50.0% by weight of Al and a balance of unavoidable impurities. | 08-13-2009 |
20090218694 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR MANUFACTURING AND INSPECTING APPARATUS, AND INSPECTING APPARATUS - A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher. | 09-03-2009 |
20100151323 | ELECTRODE, ELECTRODE PASTE AND ELECTRONIC PARTS USING THE SAME - The objects of the present invention are to provide a copper-base electrode which can be calcined in an oxidative atmosphere, e.g., in air, like a silver electrode, and is less expensive than a silver electrode; an electrode paste; and electronic parts using it. The other objects of the present invention are to provide a copper-base electrode which can be calcined in an inert gas atmosphere, e.g., in nitrogen, at low temperature; an electrode paste; and electronic parts using it. | 06-17-2010 |
20100307802 | Wiring Member, Method of Manufacturing the Wiring Member and Electronic Element - A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10 | 12-09-2010 |
20110315937 | CONDUCTIVE PASTE AND ELECTRONIC PART EQUIPPED WITH ELECTRODE WIRING FORMED FROM SAME - Provided is a conductive paste which contains an inexpensive metal, such as copper or aluminum, as an electrode wiring material and has oxidation resistance that enables the paste to withstand a high-temperature process performed in an oxidizing atmosphere and an electronic part equipped with electrode wiring formed from the paste. The electronic part in accordance with the present invention is equipped with electrode wiring that comprises a conductive glass phase containing transition metals and phosphorus, metal particles, and none of the substances prohibited by the RoHS directive. The electronic part is characterized in that each of the transition metals contained in the conductive glass phase is present in the state of having a plurality of oxidation numbers and that the proportion of the atoms which have the largest oxidation number for each transition metal satisfies a given relationship. | 12-29-2011 |
20120012992 | SEMICONDUCTOR DEVICE - A semiconductor device having an improved whisker resistance in an exterior plating film is disclosed. The semiconductor device includes a tab with a semiconductor chip fixed thereto, plural inner leads, plural outer leads formed integrally with the inner leads, a plurality of wires for coupling electrode pads of the semiconductor chip and the inner leads with each other, and a sealing body for sealing the semiconductor chip. The outer leads project from the sealing body and an exterior plating film, which is a lead-free plating film, is formed on a surface of each of the outer leads. In the exterior plating film, the number of grains not larger than 1 μm in diameter and present on an interface side in the thickness direction of the exterior plating film is larger than the number of grains not larger than 1 μm and present on a surface side of the exterior plating film, whereby the difference in linear expansion coefficient between the exterior plating film and the outer lead is made small, thus making it possible to suppress the growth of whisker. | 01-19-2012 |
20120103412 | METHOD FOR FABRICATING A LASER-INDUCED SURFACE NANOARRAY STRUCTURE, AND DEVICE STRUCTURE FABRICATED USING SAID METHOD - Provided is a method for manufacturing a two-dimensional pattern by simultaneously forming a plurality of quantum dots on a surface of a solid material and making the quantum dots a periodic structure by a laser irradiation, and a device structure and a device fabricated by the method.
| 05-03-2012 |
20120125670 | Cu-Al ALLOY POWDER, ALLOY PASTE UTILIZING SAME, AND ELECTRONIC COMPONENT - In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members. | 05-24-2012 |
20120285733 | ELECTRONIC COMPONENT PROVIDED WITH CU-AL-CO-BASED ALLOY ELECTRODE OR WIRING - An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together. | 11-15-2012 |