Patent application number | Description | Published |
20080261396 | SUBSTRATE HAVING HIGH ELECTRICAL CONNECTION RELIABILITY OF A PENETRATING VIA CONNECTED TO WIRINGS AND A METHOD FOR MANUFACTURING THE SAME - A disclosed substrate is composed of a base member having a through-hole, a penetrating via provided in the through-hole, and a wiring connected to the penetrating via. The penetrating via includes a penetrating part having two ends on both sides of the base member, which is provided in the through-hole, a first protrusion protruding from the base member, which is formed on a first end of the penetrating part so as to be connected to the wiring, and a second protrusion protruding from the base member, which is formed on a second end of the penetrating part. The first protrusion and second protrusion are wider than a diameter of the through-hole. | 10-23-2008 |
20080299768 | MANUFACTURING METHOD OF SUBSTRATE WITH THROUGH ELECTRODE - A manufacturing method of a substrate with through electrodes, comprising a substrate having through holes, and through electrodes received in the through holes, includes a through electrode formation step of forming the through electrodes on a support plate, a substrate formation step of forming the substrate, a through electrode reception step of stacking the substrate on the support plate | 12-04-2008 |
20080315413 | ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE - There are provided the steps of forming a bump | 12-25-2008 |
20080315414 | ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE - There are provided the steps of forming a bump | 12-25-2008 |
20090001569 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor chip is characterized by a structure including a semiconductor chip on which electrode pads are formed, bumps which are formed on the respective electrode pads and which have projection sections, an insulating layer formed on the semiconductor chip, and a conductive pattern to be connected to the bumps, wherein extremities of the projection sections are inserted into the conductive pattern and the inserted extremities are flattened. | 01-01-2009 |
20090001570 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - The present disclosure relates to a method of manufacturing an electronic device in which a plurality of first bumps serving as external connection terminals are formed on a conductive pattern. The method includes: (a) forming a second bump having a projection portion on an electrode pad formed on a substrate; (b) forming an insulating layer on the substrate; (c) exposing a portion of the projection portion from an upper surface of the insulating layer; (d) forming a flat stress absorbing layer in a bump providing area, in which the first bumps are provided, on the insulating layer; (e) forming a first conductive layer on the insulating layer and the stress absorbing layer and the exposed portion of the projection portion; (f) forming a second conductive layer by an electroplating using the first conductive layer as a power feeding layer; (g) forming the conductive pattern by patterning the second conductive layer; and (h) forming the first bumps on the conductive pattern formed on the stress absorbing layer. | 01-01-2009 |
20090085222 | ELECTRONIC APPARATUS AND MANUFACTURING METHOD THEREOF - There are provided a plurality of semiconductor apparatuses judged as good items in electrical and functional inspections while having internal connection terminals disposed on electrode pads of semiconductor chips, resin layers which are disposed on surfaces of the semiconductor chips in which the electrode pads are formed and expose the internal connection terminals, and wiring patterns which are disposed on the resin layers and are connected to the internal connection terminals, a wiring substrate on which the plurality of semiconductor apparatuses are stepwise stacked, the wiring substrate electrically connected to the plurality of semiconductor apparatuses, and a sealing resin with which the plurality of semiconductor apparatuses are sealed. | 04-02-2009 |
20090127665 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device has preparation step of preparing a semiconductor substrate having a plurality of semiconductor chip formation regions and a scribe region arranged between the plurality of the semiconductor chip formation regions and including a substrate cutting position, a semiconductor chip formation step of forming semiconductor chips having electrode pads on the plurality of semiconductor chip formation regions, a first insulation layer formation step of forming a first insulation layer on the semiconductor chips and the scribe region of the semiconductor substrate, a second insulation layer formation step of forming a second insulation layer on the first insulation layer except for a region corresponding to the substrate cutting position, and a cutting step of cutting the semiconductor substrate at the substrate cutting position. | 05-21-2009 |
20090170307 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A metal layer is formed on an upper surface of a resin layer provided to cover a plurality of semiconductor chips at a side on which an internal connecting terminal is disposed and the internal connecting terminal, and the metal layer is pressed to cause the metal layer in a corresponding portion to a wiring pattern to come in contact with the internal connecting terminal, and to then bond the metal layer in a portion provided in contact with the internal connecting terminal to the internal connecting terminal in a portion provided in contact with the metal layer. | 07-02-2009 |
20090302471 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - There is provided a semiconductor device including a semiconductor substrate on which a plurality of semiconductor chips having electrode pads is formed, an internal connection terminal provided on each of the electrode pads, an insulating layer provided to cover the plurality of semiconductor chips and the internal connection terminals, and a wiring pattern connected to the internal connection terminals across the insulating layer. This semiconductor device is characterized in that the insulating layer is configured to contain an alpha ray blocking material including polyimide and/or a polyimide-based compound. | 12-10-2009 |
20090321896 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - There is provided a semiconductor device | 12-31-2009 |
20100022035 | Electronic apparatus and manufacturing method thereof - There are provided a plurality of semiconductor apparatuses judged as good items in electrical and functional inspections while having internal connection terminals disposed on electrode pads of semiconductor chips, resin layers which are disposed on surfaces of the semiconductor chips in which the electrode pads are formed and expose the internal connection terminals, and wiring patterns which are disposed on the resin layers and are connected to the internal connection terminals, a wiring substrate on which the plurality of semiconductor apparatuses are stepwise stacked, the wiring substrate electrically connected to the plurality of semiconductor apparatuses, and a sealing resin with which the plurality of semiconductor apparatuses are sealed. | 01-28-2010 |
20100041183 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including a semiconductor chip encapsulated by an encapsulation resin and a manufacturing method thereof, in which a size reduction may be attempted. The device includes a semiconductor chip, an external connection terminal pad electrically connected to the semiconductor chip, and an encapsulation resin encapsulating the semiconductor chip, wherein a wiring pattern on which the external connection terminal pad is formed is provided between the semiconductor chip and the external connection terminal pad, and the semiconductor chip is flip-chip bonded to the wiring pattern. | 02-18-2010 |
20100112759 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE EMBEDDED SUBSTRATE - A manufacturing method for a semiconductor device embedded substrate, includes: a first step of preparing a semiconductor device having a first insulating layer; a second step of arranging the semiconductor device on one surface of a support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; a fifth step of forming a third insulating layer on a surface of each of the semiconductor device and the second insulating layer; a sixth step of mounting a wiring substrate on a surface of each of the semiconductor device and the second insulating layer; a seventh step of forming a via-hole in the second insulating layer and the third insulating layer; and an eighth step of forming a second wiring pattern on a surface of each of the first insulating layer and the second insulating layer. | 05-06-2010 |
20100112802 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE EMBEDDED SUBSTRATE - A manufacturing method for a semiconductor device embedded substrate, includes: a first step of preparing a semiconductor device having a first insulating layer; a second step of preparing a support body, and arranging the semiconductor device on one surface of the support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; a fifth step of forming a first wiring pattern on a surface of each of the first insulating layer and the second insulating layer; a sixth step of forming a via-hole from which the first wiring pattern is exposed on the second insulating layer; and a seventh step of forming a second wiring pattern electrically connected on a surface of the second insulating layer. | 05-06-2010 |
20100112804 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE EMBEDDED SUBSTRATE - A manufacturing method for a semiconductor device embedded substrate, includes: a first step including: a step of forming a connection terminal on an electrode pad formed on a semiconductor integrated circuit, a step of forming a first insulating layer on the semiconductor integrated circuit, a step of providing a plate-like body on the first insulating layer, a step of exposing a part of the connection terminal, and a step of removing the plate-like body to manufacture a semiconductor device; a second step of arranging the semiconductor device on one surface of a support body; a third step of forming a second insulating layer on the one surface of the support body; a fourth step of removing the support body; and a fifth step of forming a first wiring pattern electrically connected to the exposed portion on a surface of each of the first insulating layer and the second insulating layer. | 05-06-2010 |
20100320594 | SEMICONDUCTOR DEVICE WITH REINFORCEMENT PLATE AND METHOD OF FORMING SAME - A semiconductor device includes a reinforcement plate having an accommodating hole and a through hole extending from a first surface to a second surface, a semiconductor chip including a chip core and a pad formed on a pad surface of the chip core, the semiconductor chip disposed in the accommodating hole with the pad surface flush with the first surface, the chip core having substantially the same thickness as the reinforcement plate and including a semiconductor substrate, a through-hole electrode disposed in the through hole, resin sealing the semiconductor chip and the reinforcement plate, a interconnection pattern disposed on the first-surface side of the reinforcement plate to connect between the through-hole electrode and the pad, and a interconnection pattern disposed on the second-surface side of the reinforcement plate to be connected to the through-hole electrode, wherein the reinforcement plate is made of the same material as the semiconductor substrate. | 12-23-2010 |
20110003433 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A disclosed device includes a manufacturing method of semiconductor device including preparing a semiconductor substrate including semiconductor chip forming regions, scribing regions surrounding these regions, and cutting regions formed in the scribing regions and narrower than the scribing regions, forming check patterns and semiconductor chips, forming a resist film, forming through grooves narrower than the scribing regions and wider than the check patterns and the cutting regions, removing the check patterns with a wet blast process using the resist film and collectively forming grooves at portions of a protection film and the semiconductor substrate facing the through grooves, removing the resist film, forming internal connection terminals on the contacting faces, forming an insulating resin layer, forming a wiring forming face by removing until connecting faces are exposed, forming wiring patterns, and cutting the semiconductor substrate, the insulating resin layer, and a solder resist layer to separate into individual semiconductor devices. | 01-06-2011 |
20110256662 | CHIP EMBEDDED SUBSTRATE AND METHOD OF PRODUCING THE SAME - A method of producing a chip embedded substrate is disclosed. This method comprises a first step of mounting a semiconductor chip on a first substrate on which a first wiring is formed; and a second step of joining the first substrate with a second substrate on which a second wiring is formed. In the second step, the semiconductor chip is encapsulated between the first substrate and the second substrate and electrical connection is made between the first wiring and the second wiring so as to form multilayered wirings connected to the semiconductor chip. | 10-20-2011 |
20130037943 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE - A semiconductor device includes a semiconductor substrate, which includes a through hole that extends through the semiconductor substrate. An insulative layer includes a first surface, an opposite second surface covering the semiconductor substrate, and an opening aligned with the through hole. An insulative film covers an inner wall surface of the semiconductor substrate and the opening. A through electrode is formed in the through hole and the opening inward from the insulative film. The through electrode includes a first end surface that forms a pad exposed from the first surface of the insulative layer. The first end surface of the through electrode is flush with the first surface of the insulative layer. | 02-14-2013 |
20140239508 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate. A through hole extends through the semiconductor substrate. A first insulating layer covers an upper surface of the semiconductor substrate and includes an opening in communication with the through hole. An insulating film covers wall surfaces of the through hole and the opening. A through electrode is formed in the through hole and the opening. A first connection terminal includes an electroless plating metal layer formed on an end surface of the through electrode and an end surface of the insulating film. The first connection terminal has a larger diameter than the through electrode. A wiring pattern is laminated on a lower surface of the semiconductor substrate. An electrode pad is connected to the wiring pattern. The through electrode is connected to the wiring pattern. | 08-28-2014 |
20140313681 | CHIP EMBEDDED SUBSTRATE AND METHOD OF PRODUCING THE SAME - An electronic part embedded substrate is disclosed. The electronic part embedded substrate includes a first substrate, a second substrate, an electronic part, an electrically connecting member, and a sealing member. A method of producing an electronic part embedded substrate is also disclosed. The method includes mounting an electronic part onto a first substrate, laminating a second substrate on the first substrate through an electrically connecting member; and filling a space between the first substrate and the second substrate with a sealing member to seal the electronic part. | 10-23-2014 |