Patent application number | Description | Published |
20150041899 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a substrate including first and second regions, a first transistor provided on the first region to include a first channel region protruding from the substrate, and a second transistor provided on the second region to include a second channel region and a gate electrode extending between the substrate and the second channel region. The first channel region may include a lower semiconductor pattern containing a different material from the second channel region and an upper semiconductor pattern containing the same material as the second channel region. | 02-12-2015 |
20150249087 | SEMICONDUCTOR FIN DEVICES AND METHOD OF FARICATING THE SEMICONDUCTOR FIN DEVICES - A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure. | 09-03-2015 |
20150311341 | SEMICONDUCTOR DEVICE HAVING FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate having a first region and a second region, a first MOS transistor including a first fin structure and a first gate electrode in the first region, the first fin structure having a first buffer pattern, a second buffer pattern, and a first channel pattern which are sequentially stacked on the substrate, and a second MOS transistor including a second fin structure and a second gate electrode in the second region, the second fin structure having a third buffer pattern and a second channel pattern which are sequentially stacked on the substrate. Related fabrication methods are also discussed. | 10-29-2015 |
20160005864 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - A MOSFET may be formed with a strain-inducing mismatch of lattice constants that improves carrier mobility. In exemplary embodiments a MOSFET includes a strain-inducing lattice constant mismatch that is not undermined by a recessing step. In some embodiments a source/drain pattern is grown without a recessing step, thereby avoiding problems associated with a recessing step. Alternatively, a recessing process may be performed in a way that does not expose top surfaces of a strain-relaxed buffer layer. A MOSFET device layer, such as a strain-relaxed buffer layer or a device isolation layer, is unaffected by a recessing step and, as a result, strain may be applied to a channel region without jeopardizing subsequent formation steps. | 01-07-2016 |
20160086841 | METHOD FOR FORMING PATTERN OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED USING THE SAME - A method for forming a pattern of a semiconductor device and a semiconductor device formed using the same are provided. The method includes forming a buffer layer on a substrate, forming a channel layer on the buffer layer, forming support patterns penetrating the channel layer, and forming channel fin patterns and a buffer pattern by patterning the channel layer and the buffer layer. The channel layer includes a material of which a lattice constant is different from that of the buffer layer, and each of the channel fin patterns has both sidewalls that are in contact with the support patterns and are opposite to each other. | 03-24-2016 |
Patent application number | Description | Published |
20130246249 | METHOD AND SYSTEM FOR MANAGING EXCHANGE TRADED FUNDS USING AN INTRADAY INDICATIVE VALUE - A computer system is provided. The computer system includes a computing processor configured to process data for share creation and redemption and near-real time share valuation for an Exchange Traded Fund (“ETF”) that invests in at least one derivative product. The computing processor is also configured to create an intraday indicative value (“IIV”) file for the ETF based on the data processed, the IIV file including an accumulated change in value of the at least one derivative product in which the ETF invests. The accumulated value includes a gain or loss of the at least one derivative product during a previous trading day. The computer system further includes a publication processor configured to publish the IIV file to an authorized participant such that the authorized participant can utilize the IIV file to calculate an intraday indicative value of the ETF. | 09-19-2013 |
20140201053 | METHOD AND SYSTEM FOR MANAGING EXCHANGE TRADED FUNDS USING AN INTRADAY INDICATIVE VALUE - A computer implemented method, system, and software for calculating and using an intraday indicative value of a leveraged Bullish or Bearish exchange traded fund (“ETF”) for arbitrage purposes, includes calculating an intraday current value of all the equity securities in the ETF (applicable only to Bullish ETFs), calculating mark to market gains or losses of at least one derivative product, and retrieving an accumulated loss or gain of the at least one derivative product and other cash equivalent amounts. The intraday indicative value of the ETF is determined by combining the calculated intraday current value of all the equity securities (applicable only to Bullish ETFs), the accumulated loss or gain, the mark to market gains of the at least one derivative product and other cash equivalent amounts. The determined intraday value of the ETF is used, by a party, for arbitrage purposes. | 07-17-2014 |
20140209959 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe. | 07-31-2014 |
20140209960 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance. | 07-31-2014 |
20140289095 | METHOD AND SYSTEM FOR CALCULATING AN INTRADAY INDICATIVE VALUE OF LEVERAGED BULLISH AND BEARISH EXCHANGE TRADED FUNDS - A computer implemented method, system, and software for calculating and using an intraday indicative value of a leveraged Bullish or Bearish exchange traded fund (“ETF”) for arbitrage purposes, includes calculating an intraday current value of all the equity securities in the ETF (applicable only to Bullish ETFs), calculating mark to market gains or losses of at least one derivative product, and retrieving an accumulated loss or gain of the at least one derivative product and other cash equivalent amounts. The intraday indicative value of the ETF is determined by combining the calculated intraday current value of all the equity securities (applicable only to Bullish ETFs), the accumulated loss or gain, the mark to market gains of the at least one derivative product and other cash equivalent amounts. The determined intraday value of the ETF is used, by a party, for arbitrage purposes. | 09-25-2014 |