Patent application number | Description | Published |
20090129525 | APPARATUS AND METHOD FOR PHASE LOCKED LOOP - The PLL (Phase Locked Loop) apparatus and the PLL method are disclosed, wherein an output clock signal is counted in response to a reference clock signal to detect a frequency offset value and divide the output clock signal by a prescribed value to generate a phase detection value in response to the reference clock signal, generating a frequency error value to adjust a frequency of the output clock signal if the frequency offset value is not between a prescribed frequency offset maximum value and a predetermined frequency offset minimum value, and generating a phase error value in response to the phase detection value to adjust a phase of the output clock signal if the frequency offset value is in between a prescribed frequency offset maximum value and a prescribed frequency offset minimum value. | 05-21-2009 |
20110158011 | SEMICONDUCTOR MEMORY INTERFACE DEVICE AND METHOD - A memory interface circuit is provided, comprising: a first signal output circuit configured to output a first signal via a first signal line to a first I/O terminal; a second signal output circuit configured to output a second signal via a second signal line to a second I/O terminal; and a noise cancellation circuit having at least one phase adjusting element and at least one gain adjusting element to reduce a noise signal induced on the second signal line due to the presence of the first signal on the first signal line, wherein the second signal line is disposed adjacent to the first signal line. | 06-30-2011 |
20110246857 | MEMORY SYSTEM AND METHOD - A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel. | 10-06-2011 |
20110309468 | SEMICONDUCTOR CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor chip package includes a substrate, a first layer disposed on the substrate and a second layer substantially similar to and disposed on the first layer. The first layer has a first input/output (I/O) circuit, a first through-via connected to the first input/output (I/O) circuit and a second through-via that is not connected to the first I/O circuit. The second layer has a second I/O circuit, a third through-via connected to the second I/O circuit and a fourth through-via that is not connected to the second I/O circuit. The first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via. The package maybe fabricated by stacking the layers, and changing the orientation of the second layer relative to the first to ensure that the first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via. | 12-22-2011 |
20120087194 | DATA WRITE TRAINING METHOD AND SEMICONDUCTOR DEVICE PERFORMING THE SAME - Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command. | 04-12-2012 |
20120280731 | PHASE-LOCKED-LOOP CIRCUIT INCLUDING DIGITALLY-CONTROLLED OSCILLATOR - A phase-locked-loop (PLL) circuit is provided. The PLL circuit includes a phase/frequency detector, a digital filter, a digital low pass filter (LPF), a digitally controlled oscillator (DCO), and a frequency divider. The digital LPF performs a low-pass-filtering on least significant bits of first digital data in a digital mode and generates filtered second digital data. The DCO performs a digital-to-analog conversion on the second digital data and most significant bits of the first digital data to generate a first signal, generates an oscillation control signal based on the first signal, and generates an output clock signal oscillating in response to the oscillation control signal. | 11-08-2012 |
20120294059 | STACKED MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME - At least one example embodiment discloses a stacked memory device including a plurality of stacked memory chips, each of the memory chips including a memory array, a plurality of through silicon vias (TSVs) operatively connected to the plurality of stacked memory chips, micro channels configured to access the memory arrays and at least one circuit in each memory chip, the at least one circuit configured to vary a number of the micro channels accessing the memory array. | 11-22-2012 |
20130215694 | Method for semiconductor memory interface device with noise cancellation circuitry having phase and gain adjustments - A memory interface circuit is provided, comprising: a first signal output circuit configured to output a first signal via a first signal line to a first I/O terminal; a second signal output circuit configured to output a second signal via a second signal line to a second I/O terminal; and a noise cancellation circuit having at least one phase adjusting element and at least one gain adjusting element to reduce a noise signal induced on the second signal line due to the presence of the first signal on the first signal line, wherein the second signal line is disposed adjacent to the first signal line. | 08-22-2013 |
20130235683 | DATA WRITE TRAINING METHOD - Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command. | 09-12-2013 |
20130262761 | MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A memory device and a method of operating the same are provided. The memory device includes a control logic and a memory cell array. The control logic is configured to receive input information including a plurality of commands, a plurality of addresses, and priority information, and to change an execution sequence of the received commands of the input information according to the priority information. The memory cell array is configured to include a plurality of memory cells, and the memory device is configured to perform an operation on one or more memory cells based on the changed execution sequence. | 10-03-2013 |
20130294174 | MEMORY DEVICE FOR PERFORMING MULTI-CORE ACCESS TO BANK GROUPS - A memory device has a burst length “b”, performs “k” core accesses per command, and receives a command, where “b” is an integer of at least 2 and “k” is an integer of at least 2 and at most “b”. The memory device includes a memory cell array comprising a plurality of bank groups, a plurality of bank group control units respectively corresponding to the plurality of bank groups, each of the bank group control units configured to generate a multiplexer control signal for selecting part of data read from a corresponding bank group, and a multiplexer configured to sequentially output data read from the plurality of bank groups according to the multiplexer control signal output from the plurality of bank group control units. Data items comprised in output data of the multiplexer have a same time space. | 11-07-2013 |
20140019833 | MEMORY SYSTEM AND METHOD - A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel. | 01-16-2014 |
20140032826 | METHOD OF TRAINING MEMORY CORE AND MEMORY SYSTEM - A method of training a memory device included in a memory system is provided. The method includes testing memory core parameters for a memory core of the memory device during a booting-up sequence of the memory system; determining trimmed memory core parameters based on the test results; storing the determined trimmed memory core parameters; and applying the trimmed memory core parameter to the memory device during a normal operation of the memory device. | 01-30-2014 |
20140089574 | SEMICONDUCTOR MEMORY DEVICE STORING MEMORY CHARACTERISTIC INFORMATION, MEMORY MODULE AND MEMORY SYSTEM HAVING THE SAME, AND OPERATING METHOD OF THE SAME - A semiconductor memory device storing memory characteristic information, a memory module including the semiconductor memory device, a memory system, and an operating method of the semiconductor memory device. The semiconductor memory device may include a cell array including a plurality of areas; a command decoder configured to decode a command and generate an internal command; and an information storage unit configured to store characteristic information of at least one of the plurality of areas. When a first command and a first row address accompanying the first command are received, characteristic information of an area corresponding to the first row address is provided to an outside. | 03-27-2014 |
20140157045 | Memory controller, memory system including the memory controller, and operating method performed by the memory controller - Provided are a memory controller, a memory system including the memory controller, and an operating method performed by the memory controller. The operating method includes operations of queuing a first command in a first queue, detecting a fail of a first address that corresponds to the first command, when the first address is determined as a fail address, queuing a second address and a second command in the first queue, wherein the second address is obtained by remapping the first address and the second command corresponds to the second address, and outputting the second command and the second address from the first queue. | 06-05-2014 |
20140317470 | MEMORY DEVICES THAT PERFORM MASKED WRITE OPERATIONS AND METHODS OF OPERATING THE SAME - A method of operating a memory device includes: generating an internal read command in response to a received masked write command, the internal read command being generated one of (i) during a write latency associated with the received masked write command, (ii) after receipt of a first bit of masked write data among a plurality of bits of masked write data, and (iii) in synchronization with a rising or falling edge of a clock signal received with an address signal corresponding to the masked write command; reading, in response to the internal read command, a plurality of bits of data stored in a plurality of memory cells, the plurality of memory cells corresponding to the address signal; and storing, in response to an internal write command, the plurality of bits of masked write data in the plurality of memory cells. | 10-23-2014 |
20140317471 | SEMICONDUCTOR MEMORY DEVICES INCLUDING SEPARATELY DISPOSED ERROR-CORRECTING CODE (ECC) CIRCUITS - A semiconductor memory device may comprise: at least one bank, each of the at least one bank including a plurality of memory cells; an error-correcting code (ECC) calculator configured to generate syndrome data for detecting an error bit from among parallel data bits read out from the plurality of memory cells of each of the at least one bank; an ECC corrector separated from the ECC calculator, the ECC corrector configured to correct the error bit from among the parallel data bits by using the syndrome data and configured to output error-corrected parallel data bits; and/or a data serializer configured to receive the error-corrected parallel data bits and configured to convert the error-corrected parallel data bits into serial data bits. | 10-23-2014 |