Patent application number | Description | Published |
20110210311 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 09-01-2011 |
20110210351 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 09-01-2011 |
20120080707 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer. | 04-05-2012 |
20120175587 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is herein disclosed. The semiconductor light emitting device includes: a conductive substrate, a p-type semiconductor layer disposed on the conductive substrate, an active layer disposed on the p-type semiconductor layer, an n-type semiconductor layer disposed on the active layer, and an n-side electrode disposed on the n-type semiconductor layer and including a carbon nanotube layer doped with an n-type impurity. | 07-12-2012 |
20120181570 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer. | 07-19-2012 |
20120299040 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer. | 11-29-2012 |
20140070244 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a substrate and a plurality of light emitting cells arranged on the substrate. Each of the light emitting cells includes a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light. An interconnection structure electrically connects the first-conductivity-type and the second-conductivity-type semiconductor layers of one light emitting cell to the first-conductivity-type and the second-conductivity-type semiconductor layers of another light emitting cell. A light conversion part is formed in a light emitting region defined by the light emitting cells and includes a red and/or a green light conversion part respectively having a red and/or a green light conversion material. | 03-13-2014 |
20140117392 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices. | 05-01-2014 |