Patent application number | Description | Published |
20110157113 | DISPLAY PANEL AND DISPLAY DEVICE USING THE SAME - A display panel ( | 06-30-2011 |
20120115286 | THIN-FILM TRANSISTOR PRODUCING METHOD - Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer ( | 05-10-2012 |
20120200546 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE PROVIDED WITH SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device including plural types of semiconductor elements having structures that have respective thicknesses suitable for their uses formed in the same process. A semiconductor device ( | 08-09-2012 |
20120242624 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, AS WELL AS DISPLAY - An object of the present invention is to provide a thin film transistor fabricating method including a simplified step of forming contact holes. This method involves previously removing a gate insulating film ( | 09-27-2012 |
20130033655 | THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE - Disclosed is an active matrix substrate ( | 02-07-2013 |
20140048812 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX BOARD, AND DISPLAY DEVICE - Provided is a semiconductor device equipped with: a plurality of switching elements (T | 02-20-2014 |
20140131703 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME - This display device is provided with: a circuit substrate having a display region and a non-display region; pixel-driving TFTs for driving pixels, formed in the display region and having source electrodes and drain electrodes being spaced apart from each other on an insulating film and a first active layer formed from an oxide semiconductor, provided on the opposite side from the insulating film so as to cover a separation section between a source electrode and a drain electrode and part of the source electrode and part of the drain electrode adjacent to the separation section; and a driver circuit TFT for driving the pixel-driving TFTs, formed in the non-display region and having a second active layer formed from a non-oxide semiconductor. | 05-15-2014 |
20150129867 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device has: a first transparent electrode, a drain electrode, and a source electrode formed on a substrate; an oxide layer joined electrically to the source electrode and the drain electrode and containing a semiconductor region; an insulating layer formed on the oxide layer and the first transparent electrode; a gate electrode formed on the insulating layer; and a second transparent electrode formed so as to overlap at least a part of the first transparent electrode with the insulating layer interposed therebetween. The oxide layer and the first transparent electrode are formed of the same oxide film. | 05-14-2015 |