Patent application number | Description | Published |
20090010017 | LIGHT EMITTING DEVICE - A light emitting device comprises; a metal reflecting member, a light emitting element fixed to the metal reflecting member, a glass film that covers the metal reflecting member and has Si—N bonds, and a translucent resin that covers the glass film. The present invention provides a light emitting device with which, even when this device is used in a harsh environment, there will be no deterioration in the light reflecting performance of the metal reflecting member, and light can be emitted at high output over an extended period. | 01-08-2009 |
20100117114 | SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME - A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode. | 05-13-2010 |
20120112622 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device ( | 05-10-2012 |
20130257264 | WAVE-LENGTH CONVERSION INORGANIC MEMBER, AND METHOD FOR MANUFACTURING THE SAME - A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer. | 10-03-2013 |
20140097462 | SEMICONDUCTOR LIGHT-EMITTING APPARATUS AND METHOD OF FABRICATING THE SAME - A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode. | 04-10-2014 |
20150034987 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A semiconductor device includes a substrate; a light emitting element flip-chip mounted on the substrate; a phosphor-containing member provided at least above the light emitting element and separated from the light emitting element; and a first reflecting member configured to cover the phosphor-containing member, at least one of a side faces of the light emitting device having an opening for extracting light emitted from the light emitting element and light wavelength-converted by the phosphor-containing member. | 02-05-2015 |
20150159836 | WAVE-LENGTH CONVERSION INORGANIC MEMBER, AND METHOD FOR MANUFACTURING THE SAME - A wave-length conversion inorganic member can includes a base body and an inorganic particle layer on the base body. The inorganic particle layer can include particles of an inorganic wave-length conversion substance which is configured to absorb light of a first wave-length and to emit light of a second wave-length different from the first wave-length. The inorganic particle layer can include an agglomerate of a plurality of the particles. Each of the plurality of the particles are in contact with at least one of the other particles or the base body. A cover layer comprises an inorganic material, and the cover layer continuously covers a surface of the base body and surfaces of the particles. The inorganic particle layer has an interstice enclosed by the particles, or by the particles and one of the base body and the cover layer. | 06-11-2015 |
20150207046 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - Provided is a light emitting device having a phosphor layer on a surface of a semiconductor light emitting element and reducing unevenness in light distribution color, and a method of manufacturing the same. A light emitting device | 07-23-2015 |