Patent application number | Description | Published |
20100065130 | TWO COMPONENT FOAM DISPENSING APPARATUS - A foam dispensing assembly comprises a dispensing head and a manifold assembly. The manifold assembly includes a purge portion for supplying a gas and a cleansing fluid to the dispensing head, a first supply portion for supplying a first fluid to the dispensing head and a second supply portion for supplying a second fluid to the dispensing head. Each of the purge portion, the first supply portion and the second supply portion include a plurality of check valves and flow control valves for controlling the flow of the first fluid, the second fluid, the gas and the cleansing fluid through the manifold assembly. Each of the first supply portion and the second supply portion include an integral flow control device for regulating a fluid flow rate to the dispensing head, and a thermometer for sensing the temperature of the first fluid and the second fluid respectively. | 03-18-2010 |
20100065768 | EXTERNALLY ADJUSTABLE PRESSURE COMPENSATED FLOW CONTROL VALVE - An in-line fluid flow control valve includes a housing defining an inlet chamber and an outlet chamber aligned along a outlet axis. The housing further defines a bore with a flow control device and an adjustment mechanism disposed therein for regulating a fluid flow rate. The flow control device defines a fluid passage interconnecting the inlet chamber and the outlet chamber. The plane and the outlet axis define an acute angle therebetween. The angled position of the bore relative to the outlet axis permits access to and adjustment of the flow control device, as well as replacement of the flow control device, without disconnecting any fittings attached to the inlet and the outlet of the control valve. | 03-18-2010 |
20100069517 | METHOD OF FORMING A POLYURETHANE FOAM - A method of forming polyurethane foam from a resin component and an isocyanate component includes the use of at least one control valve controlling a flow rate of at least one of the resin component and the isocyanate component. The method includes connecting lines having at least a 1 inch diameter to a housing of the control valve. The method also includes coupling a source of gas pressure to the line. At least one of the resin component and the isocyanate component is pressurized with the source of gas pressure to move the resin and/or isocyanate component through the line and into the flow control device at a flow rate of between 5 and 70 gallons per minute. | 03-18-2010 |
20110121034 | FOAM DISPENSING APPARATUS - A foam dispensing apparatus is capable of dispensing a mixture of a resin component and an isocyanate component. The foam dispensing apparatus includes a resin line and an isocyanate line connected to a manifold. A nozzle is connected to the manifold and the mixture is dispensed through the nozzle. The manifold defines a resin duct in communication with the resin line and the nozzle and an isocyanate duct in communication with the isocyanate line and the nozzle. At least one valve is connected to the resin and isocyanate lines and is moveable between an open position allowing flow through the resin and isocyanate lines and a closed position preventing flow through the resin and isocyanate lines. The valve is disposed exterior to the manifold and the flow is unregulated in the manifold for reducing maintenance of the manifold. | 05-26-2011 |
Patent application number | Description | Published |
20080293196 | Method for fabricating multi-resistive state memory devices - A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays. | 11-27-2008 |
20100157657 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 06-24-2010 |
20110186803 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 08-04-2011 |
20120087174 | Two Terminal Re Writeable Non Volatile Ion Transport Memory Device - A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion. | 04-12-2012 |
20140211542 | Memory Element With a Reactive Metal Layer - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 07-31-2014 |
20150162382 | 1D-2R MEMORY ARCHITECTURE - A memory device includes an array of resistive memory cells. Each resistive memory cell in the array includes a first resistive memory element, a second resistive memory element, and a two-terminal switching element. The first resistive memory element is electrically coupled to the second resistive memory element and to the switching element at a common node. | 06-11-2015 |
20160005793 | MEMORY ELEMENT WITH A REACTIVE METAL LAYER - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 01-07-2016 |