Su, Kaohsiung City
Bo-Hao Su, Kaohsiung City TW
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20130297086 | POWER-SAVING CONTROLLING METHOD AND SYSTEM THEREOF - A power-saving controlling method includes steps as follows. An electrical information is captured from an electrical equipment by an intelligent socket device. The electrical information is calculated and a rule table is generated. An automatic controlling signal is generated according to the rule table. The intelligent socket device is switched off or switched on according to the automatic controlling signal. | 11-07-2013 |
Chan-Hung Su, Kaohsiung City TW
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20090148057 | SYSTEMS AND METHODS FOR RANDOMLY ACCESSING COMPRESSED IMAGES - An embodiment of a method for encoding a source image comprising multiple data units, performed by an image encoding unit, comprises the following steps. A quantized DC coefficient and multiple AC coefficients of a data unit are generated. A value at the (0,0) element of the first data unit is determined according to the quantized DC coefficient. A variable length coding (VLC) stream of the data unit is generated by encoding the determined value and the AC coefficients. An encoded bitstream comprising a restart mark followed by the VLC stream of the data unit is generated. An offset pointing to the beginning of the restart mark of the encoded bitstream is stored in a random access table. A compression image comprising the encoded bitstream and the random access table is generated. | 06-11-2009 |
Chao-An Su, Kaohsiung City TW
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20120205808 | MEMS and Protection Structure Thereof - A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad. | 08-16-2012 |
Chen-Ping Su, Kaohsiung City TW
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20080230531 | HEAT BLOCK - A heat block for holding an electronic device is disclosed. The heat block comprises a base and at least one discharge device. The discharge device is disposed on the base. The discharge device is electrically conductive and is grounded. When the electronic device is placed on the base, the discharge device is in contact with an electrical contact of the electronic device. | 09-25-2008 |
20080304245 | SEMICONDUCTOR PACKAGE AND METHOD FOR DISCHARGING ELECTRONIC DEVICES ON A SUBSTRATE - A method for discharging an electronic device on a substrate is provided. A metal pin mounted on a wire bonder is used to touch with a specific finger disposed on the substrate which is in electrical connection with the electronic device. As a result, the electric charge previously stored in the electronic device will be conducted to the wire bonder through the specific finger and metal pin thereby discharging the stored charge. Another method for discharging an electronic device on a substrate is also provided. A metal wire protruding out from the capillary of a wire bonder is heated to form a metal ball at the capillary. The capillary is moved to bring the metal ball into contact with the specific finger. As a result, the electric charge previously stored in the electronic device will thus can be discharged to the wire bonder. The present invention further provides a semiconductor package. | 12-11-2008 |
20090121329 | LEAD FRAME STRUCTURE AND APPLICATIONS THEREOF - A lead frame structure comprises a side rail, a first paddle, a second paddle, a plurality of leads, and an downset anchor bar. The first paddle is connected to the side rail via at least one first tie bar, and the second paddle is connected to the side rail via at least one-second tie bar. The first paddle and the second paddle separated from each other are used to define an area to support a chip. These leads set on the side rail expends toward to the chip supporting area. One end of the downset anchor bar is connected to the side rail, and the other end of the downset anchor bar has a protrusion portion which is between the first paddle and the second paddle and is downset from the side rail. | 05-14-2009 |
Chia Ho Su, Kaohsiung City TW
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20090238444 | OPTICAL IMAGING APPARATUS AND METHOD FOR INSPECTING SOLAR CELLS - An optical imaging apparatus for inspecting a solar cell includes a power supply configured to apply a reverse biased voltage to the solar cell such that shunt defects in the solar cell will generate heat, a thermal imaging device configured to obtain the thermal image of the solar cell, a computing unit including a thermal image analysis module configured to identify hot spots in the thermal image, a locating module configured to locate the center positions of the hot spots, a visible image analysis module configured to identify the defect features of the hot spots, and a visible light imaging device configured to acquire visible images of the hot spots. | 09-24-2009 |
20100288012 | APPARATUS FOR TESTING BONDING STRENGTH OF ELECTRICAL CONNECTIONS AND FRICTIONLESS CALIBRATION DEVICE FOR THE SAME - An apparatus for testing bonding strength of electrical connection comprises a platform including a two-axis drive, a device holder positioned on the two-axis drive and configured to receive an electronic device, a vertical drive positioned on the platform, a cantilever positioned on the vertical drive, and a test head connected in a rotational manner with the cantilever. A frictionless calibration device for shear force testing comprises a base, two supporters positioned on the base, a shaft having two tapering ends positioned between the two supporters, and a calibration member fixed on the shaft, wherein the shaft and the calibration member contact the supporters in a rotational manner. | 11-18-2010 |
Chien-Chang Su, Kaohsiung City TW
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20080246057 | Silicon layer for stopping dislocation propagation - A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices. | 10-09-2008 |
20110042729 | METHOD FOR IMPROVING SELECTIVITY OF EPI PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process. | 02-24-2011 |
20110073952 | Controlling the Shape of Source/Drain Regions in FinFETs - An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness. | 03-31-2011 |
20110108894 | METHOD OF FORMING STRAINED STRUCTURES IN SEMICONDUCTOR DEVICES - The present disclosure provides a method of fabricating that includes providing a semiconductor substrate; forming a gate structure on the substrate; performing an implantation process to form a doped region in the substrate; forming spacers on sidewalls of the gate structure; performing an first etching to form a recess in the substrate, where the first etching removes a portion of the doped region; performing a second etching to expand the recess in the substrate, where the second etching includes an etchant and a catalyst that enhances an etching rate at a remaining portion of the doped region; and filling the recess with a semiconductor material. | 05-12-2011 |
20110147846 | METHOD FOR INCORPORATING IMPURITY ELEMENT IN EPI SILICON PROCESS - The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant. | 06-23-2011 |
20110171795 | FinFET LDD and Source Drain Implant Technique - A method of forming an integrated circuit includes providing a semiconductor wafer; and forming a fin field-effect transistor (FinFET) including implanting the semiconductor wafer using a hot-implantation to form an implanted region in the FinFET. The implanted region comprises a region selected from the group consisting essentially of a lightly doped source and drain region, a pocket region, and a deep source drain region. | 07-14-2011 |
20110193141 | METHOD OF FABRICATING A FINFET DEVICE - A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a substrate of a crystalline semiconductor material having a top surface of a first crystal plane orientation; a fin structure of the crystalline semiconductor material overlying the substrate; a gate structure over a portion of the fin structure; an epitaxy layer over another portion of the fin structure, the epitaxy layer having a surface having a second crystal plane orientation, wherein the epitaxy layer and underlying fin structure include a source and drain region, the source region being separated from the drain region by the gate structure; and a channel defined in the fin structure from the source region to the drain region, and aligned in a direction parallel to both the surface of the epitaxy layer and the top surface of the substrate. | 08-11-2011 |
20110210404 | Epitaxy Profile Engineering for FinFETs - A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin. | 09-01-2011 |
20120126296 | INTEGRATED CIRCUITS AND FABRICATION METHODS THEREOF - A method of forming an integrated circuit includes forming a gate structure over a substrate. Portions of the substrate are removed to form recesses adjacent to the gate structure. A silicon-containing material structure is formed in each of the recesses. The silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region | 05-24-2012 |
20120299121 | Source/Drain Formation and Structure - A system and method for forming semiconductor structures is disclosed. An embodiment comprises forming a high diffusibility layer adjacent to a gate stack and forming a low diffusibility layer adjacent to the high diffusibility layer. After these two layers are formed, an anneal is performed to diffuse dopants from the high diffusibility layer underneath the gate stack to help form a channel region. | 11-29-2012 |
20130001705 | Epitaxy Profile Engineering for FinFETs - A method of forming an integrated circuit structure includes providing a wafer including a substrate and a semiconductor fin at a major surface of the substrate, and performing a deposition step to epitaxially grow an epitaxy layer on a top surface and sidewalls of the semiconductor fin, wherein the epitaxy layer includes a semiconductor material. An etch step is then performed to remove a portion of the epitaxy layer, with a remaining portion of the epitaxy layer remaining on the top surface and the sidewalls of the semiconductor fin. | 01-03-2013 |
20130043511 | INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS - An integrated circuit includes a gate electrode disposed over a substrate. A source/drain (S/D) region is disposed adjacent to the gate electrode. The S/D region includes a diffusion barrier structure disposed in a recess of the substrate. The diffusion barrier structure includes a first portion and a second portion. The first portion is adjacent to the gate electrode. The second portion is distant from the gate electrode. An N-type doped silicon-containing structure is disposed over the diffusion barrier structure. The first portion of the diffusion barrier structure is configured to partially prevent N-type dopants of the N-type doped silicon-containing structure from diffusing into the substrate. The second portion of the diffusion barrier structure is configured to substantially completely prevent N-type dopants of the N-type doped silicon-containing structure from diffusing into the substrate. | 02-21-2013 |
20130062670 | Device with Engineered Epitaxial Region and Methods of Making Same - An engineered epitaxial region compensates for short channel effects of a MOS device by providing a blocking layer to reduce or prevent dopant diffusion while at the same time reducing or eliminating the side effects of the blocking layer such as increased leakage current of a BJT device and/or decreased breakdown voltage of a rectifier. These side effects are reduced or eliminated by a non-conformal dopant-rich layer between the blocking layer and the substrate, which lessens the abruptness of the junction, thus lower the electric field at the junction region. Such a scheme is particularly advantageous for system on chip applications where it is desirable to manufacture MOS, BJT, and rectifier devices simultaneously with common process steps. | 03-14-2013 |
20130071980 | METHOD FOR FABRICATING A FINFET DEVICE - A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes forming a fin structure on a semiconductor substrate and forming a gate structure on the fin structure. A capping layer is then formed over the semiconductor substrate, fin structure, and gate structure. The capping layer is patterned to form an opening exposing a second portion of the fin structure. An epitaxial layer is grown in the opening and on the second portion of the fin structure. At least one of a source region and a drain region is provided in the epitaxial layer. The method may continue to remove the capping layer. | 03-21-2013 |
20130089959 | Controlling the Shape of Source/Drain Regions in FinFETs - An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a source/drain region over the insulation regions. The source/drain region includes a first and a second semiconductor region. The first semiconductor region includes silicon and an element selected from the group consisting of germanium and carbon, wherein the element has a first atomic percentage in the first semiconductor region. The first semiconductor region has an up-slant facet and a down-slant facet. The second semiconductor region includes silicon and the element. The element has a second atomic percentage lower than the first atomic percentage. The second semiconductor region has a first portion on the up-slant facet and has a first thickness. A second portion of the second semiconductor region, if any, on the down-slant facet has a second thickness smaller than the first thickness. | 04-11-2013 |
20130122674 | Silicon Layer for Stopping Dislocation Propagation - A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices. | 05-16-2013 |
20130299876 | Method For Improving Selectivity Of EPI Process - The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure over the substrate, forming a material layer over the substrate and the gate structure, implanting Ge, C, P, F, or B in the material layer, removing portions of the material layer overlying the substrate at either side of the gate structure, forming recesses in the substrate at either side of the gate structure, and depositing a semiconductor material in the recesses by an expitaxy process. | 11-14-2013 |
20140197493 | DEFECT REDUCTION FOR FORMATION OF EPITAXIAL LAYER IN SOURCE AND DRAIN REGIONS - The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled etch of a native oxide layer on the surfaces of recesses to reduce creation of particles, and pre-CDE etch to remove particles from surface. The mechanisms also include reduced etch/deposition ratio(s) of initial CDE unit cycle(s) of CDE process to reduce the effect of residual particles on the formation of the epitaxially grown silicon-containing layer. With the application of one or more of the mechanisms, the quality of the epitaxial layer is improved. | 07-17-2014 |
20140256119 | CYCLIC EPITAXIAL DEPOSITION AND ETCH PROCESSES - A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion of the deposited epitaxial layer at a variable temperature higher than the first temperature. The step of etching is performed while varying the temperature. | 09-11-2014 |
20140264348 | Asymmetric Cyclic Desposition Etch Epitaxy - The present disclosure relates to a method of forming an epitaxial layer through asymmetric cyclic deposition etch (CDE) epitaxy. An initial layer growth rate of one or more cycles of the CDE process are designed to enhance a crystalline quality of the epitaxial layer. A growth rate of the epitaxial material may be altered by adjusting a flow rate of one or more silicon-containing precursors within a processing chamber wherein the epitaxial growth takes place. An etch rate may also be altered by adjusting a temperature or partial pressure of one or more vapor etchants, or the temperature within the processing chamber. In some embodiments, an initial layer thickness that is greater than a critical thickness of the epitaxial material for strain relaxation is achieved with a low growth rate, followed by a high growth rate for the remainder of epitaxial growth. Other methods are also disclosed. | 09-18-2014 |
20140299945 | INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE - An integrated circuit includes a gate structure over a substrate. A silicon-containing material structure is in each of recesses that are adjacent to the gate structure. The silicon-containing material structure has a first region and a second region, the second region is closer to the gate structure than the first region, and the first region is thicker than the second region. | 10-09-2014 |
20150024567 | Defect Reduction for Formation of Epitaxial Layer in Source and Drain Regions - The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing layer with reduced number of particles on surface of recesses. The described mechanisms also reduce the effect of the residual particles on the epitaxial growth. The mechanisms include controlled etch of a native oxide layer on the surfaces of recesses to reduce creation of particles, and pre-CDE etch to remove particles from surface. The mechanisms also include reduced etch/deposition ratio(s) of initial CDE unit cycle(s) of CDE process to reduce the effect of residual particles on the formation of the epitaxially grown silicon-containing layer. With the application of one or more of the mechanisms, the quality of the epitaxial layer is improved. | 01-22-2015 |
20150024569 | INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS - A method of forming an integrated circuit includes forming a gate electrode over a substrate, forming a recess in the substrate and adjacent to the gate electrode, forming a diffusion barrier structure in the recess, forming an N-type doped silicon-containing structure over the diffusion barrier structure and thermally annealing the N-type doped silicon-containing structure. The diffusion barrier structure includes a first portion and a second portion. The first portion is adjacent to the gate electrode and the second portion is distant from the gate electrode. The first portion of the diffusion barrier structure is configured to partially prevent N-type dopants of the N-type doped silicon-containing structure from diffusing into the substrate and the second portion of the diffusion barrier structure is configured to substantially completely prevent N-type dopants of the N-type doped silicon-containing structure from diffusing into the substrate. | 01-22-2015 |
Chih-Chung Su, Kaohsiung City TW
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20130075386 | NANOTUBE HEATING DEVICE COMPRISING CARBON NANOTUBE AND MANUFACTURING METHOD THEREOF - An embodiment of the present disclosure relates to a heating device comprising a carbon nanotube, which comprises a carbon nanotube layer containing aligned carbon nanotube carpet, a first electrode and a second electrode having a predetermined distance between each other and electrically connected to the carbon nanotube layer respectively, wherein a current produced by applying a voltage to the first electrode passes laterally via the diameter direction of the aligned carbon nanotubes from the first electrode to the second electrode. The present disclosure also includes methods for manufacturing the aligned carbon nanotube carpet. | 03-28-2013 |
Chih-Hsien Su, Kaohsiung City TW
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20080252472 | AUTOMATIC LIQUID LEVEL MONITORING APPARATUS - An automatic liquid level monitoring apparatus. A flexible circuit board is attached to a resilient base plate. A light transmitter is disposed on and electrically connected to the flexible circuit board. A light detector is disposed on and electrically connected to the flexible circuit board. The light detector opposes the light transmitter. An alarm is disposed on the resilient base plate and electrically connected to the flexible circuit board. A power supply member is electrically connected to the flexible circuit board, supplying power thereto. | 10-16-2008 |
20090028758 | MAGNETIC SEPARATION DEVICE - A magnetic separation device, comprising: a separator, including a top base and a bottom base; at least a groove set, each composed of two arc-like grooves having curvatures opposite to each other; at least a magnetic member, being movably fitted inside the two arc-like grooves of the at least one groove set; and at least a test tube slot, each being formed at the outer rim of a base selected from the group consisting of the top and the bottom base of the separator; wherein the top and the bottom bases are assembled by means of a pivotal axis piecing through about at the center of the top and the bottom bases for enabling the two bases to rotate relative to each other; and one of the two arc-like groove is formed on the top base at a surface thereof facing toward the bottom base while forming another arc-like groove on the bottom base at a surface thereof facing toward the top base. With the aforesaid device, the magnetic member can be driven to slide inside the groove set while the top and the bottom bases are driven to rotate relative to each other, thereby, the magnetic member can be moved between two positions whereas one is near the test tube slot and the other is away from the same. | 01-29-2009 |
20090314366 | FLUIDIC DEVICE - A fluidic device is provided for sealing a proper amount of fluid with a brittle material. By moving an adsorbate through an external adsorption force, the brittle material for pre-sealing is broken, and the fluid flows out to interact with the external environment to generate a pump reaction. In addition, the invention may also be used for storing a liquid reagent in a device for a long time. Thereby, the fluidic device can be made small and portable. | 12-24-2009 |
Chin Su, Kaohsiung City TW
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20120213266 | METHODS AND APPARATUSES OF CALIBRATING I/Q MISMATCH IN COMMUNICATION CIRCUIT - A method and apparatus of calibrating I/Q mismatch of a communication circuit is disclosed. The disclosure employs I/Q test signals respectively including different frequency components to calibrate the frequency-dependent I/Q mismatch existing in the communication system. | 08-23-2012 |
20140055198 | GAIN ADJUSTMENT DEVICE AND GAIN ADJUSTMENT METHOD FOR WIRELESS COMMUNICATION CIRCUIT FOR WIRELESS COMMUNICATION CIRCUIT - A gain adjustment device for a wireless communication circuit comprising a transmission circuit and a reception circuit includes a signal generator and a gain adjustment circuit. The signal generator is coupled to the transmission circuit, and arranged for generating a test signal to the transmission circuit. The test signal transmitted through a printed circuit board such that the reception circuit coupled to the transmission circuit generates a corresponding reception signal in response to the test signal. The gain adjustment circuit is coupled to the reception circuit and the transmission circuit, and arranged for adjusting a transmitter gain configuration and a receiver gain configuration of the wireless communication circuit according to the reception signal. | 02-27-2014 |
Chin-Fen Su, Kaohsiung City TW
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20120036597 | Cold-Tolerant Plants - Disclosed are chill- or cold-tolerant plants and methods of making the plants. Also disclosed are methods for identifying a plant that is tolerant to chill. | 02-09-2012 |
Chiun-Tong Su, Kaohsiung City TW
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20080245479 | ETCHING SYSTEM - An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer. | 10-09-2008 |
20100314047 | Etching System - An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer. | 12-16-2010 |
Chong-Xian Su, Kaohsiung City TW
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20140159708 | MEASUREMENT DEVICE - A measurement device is provided. The measurement device comprises a ring-shaped base and multiple sensing elements. The sensing elements are symmetrically disposed on the ring-shaped base. Each sensing element comprises a circumferential groove, an axial groove and a coil. The axial groove is connected to the circumferential groove. The coil is surrounded within the circumferential groove and extended along the axial groove. | 06-12-2014 |
20140159709 | MEASUREMENT DEVICE - A measurement device is provided. The measurement device comprises a ring-shaped base and multiple sensing units and a plurality of coils. The sensing units are disposed on and protruded from the inner circumferential surface of the ring-shaped base. Each sensing unit comprises a circumferential groove and an axial groove. The axial groove is connected to the circumferential groove. Each coil is surrounded within the circumferential groove and extended along the axial groove. | 06-12-2014 |
Chuan-Hui Su, Kaohsiung City TW
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20130335345 | TOUCH DISPLAY DEVICE - A touch display device includes a transparent substrate, a light-blocking frame layer and a transparent protecting layer. The transparent substrate includes a frame area and a visual area. The light-blocking frame layer is disposed above the frame area of the transparent substrate. The transparent protecting layer is disposed above the transparent substrate and the light-blocking frame layer, and includes a gap having a projection on the transparent substrate, wherein the projection of the gap has one of conditions of at least partially overlapping the light-blocking frame layer and being located at a distance less than 2 millimeters from the light-blocking frame layer. | 12-19-2013 |
20140015772 | FLEXIBLE TOUCH-SENSING DISPLAY PANEL - The present invention provides a flexible touch-sensing display panel including a flexible display panel, a flexible transparent substrate and a first patterned transparent conductive layer. The flexible display panel has a display surface, and the flexible transparent substrate is disposed on the display surface of the flexible display panel. The flexible transparent substrate has a first surface and a second surface disposed opposite to each other, and the first patterned transparent conductive layer is disposed on the first surface of the flexible transparent substrate. | 01-16-2014 |
20140016044 | TOUCH-SENSING PANEL AND TOUCH-SENSING LIQUID CRYSTAL DISPLAY PANEL USING THE SAME - The present invention provides a touch-sensing panel including a polarization plate and a patterned sensing electrode layer. The polarization plate has a first surface and a second surface, and the first surface and the second surface are disposed opposite to each other. The first patterned sensing electrode layer is disposed on the first surface, and the first patterned sensing electrode layer is directly attached on the first surface of the polarization plate. | 01-16-2014 |
Chun-Chin Su, Kaohsiung City TW
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20130097543 | CAPTURE-AND-PASTE METHOD FOR ELECTRONIC DEVICE - A capture-and-paste method is implemented by a processor of an electronic device having a display unit. The processor executes at least one application and correspondingly enables display of at least one application window. The capture-and-paste method includes: defining a transparent working zone superimposed on the application window; moving the working zone onto a user-selected part of the application window; capturing the user-selected part of the application window to result in captured content; moving the working zone onto another user-selected part of the application window; and pasting the captured content onto the another user-selected part of the application window. | 04-18-2013 |
Chung-Hsiu Su, Kaohsiung City TW
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20130056378 | PORTABLE TOOL STORING DEVICE - A portable tool storing device includes first and second modular shelves configured to be brought into fitting engagement with each other in an upright direction by a back-to-back engagement manner so as to permit crosspieces to be juxtaposed to and combined with each other to form a handle for carrying. Each shelf includes a plurality of flank segments, each having an indented region. A modular container has a clip lug disposed to be clipped on the indented region to detachably hold the container on the flank segment so as to provide easy access to a tool in the container body. | 03-07-2013 |
Chung-Shiu Su, Kaohsiung City TW
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20120285595 | FOAM WHEEL ASSEMBLING AND POSITIONING STRUCTURE - A foam wheel assembling and positioning structure includes a wheel frame having a plurality of ribbed plates thereon and a wheel body covering the ribbed plates. The wheel body has a penetration hole. A first fixing part is formed on a peripheral edge of the penetration hole and provided with a plurality of first fixing holes thereon. Two wheel covers are fixed oppositely on the wheel frame. Each wheel cover has a positioning hole thereon, and a positioning screw penetrates into the positioning hole and is screw-locked with a positioning nut. Furthermore, a peripheral edge of each wheel cover has a second fixing part which has second fixing holes thereon. A fixing element is fixed in the first and second fixing hole, so as to fix the wheel body onto the wheel frame and the wheel covers, thereby avoiding detachment caused by relative sliding during traveling. | 11-15-2012 |
Chun-Hsien Su, Kaohsiung City TW
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20100073029 | Complementary Energy Path Adiabatic Logic - A complementary energy path adiabatic logic (CEPAL) includes an evaluation network and a power clock network. The evaluation network is a logic circuit composed of P-type MOS transistors and N-type MOS transistors. The power clock network includes a P-type and N-type MOS transistors and additional P-type and N-type MOS transistors, with each of the transistors involved in the power clock network acting as an active diode. | 03-25-2010 |
20110121879 | METHOD OF AUTOMATIC GAIN MODULATION AND APPARATUS IMPLEMENTING THE SAME - Provided is method for automatic audio gain modulation and a related apparatus. In order to prevent the unstable signals as continuously increasing or decreasing the gain when the signals hover around an upper threshold, it's featured that the method is to predict the signal intensity as pre-adding a predict gain in a hold time before outputting signals. By determining whether the prediction exceeds a predetermined threshold or not, the suitable and adjustable gains can be obtained without exceeding the predetermined threshold. In the automatic gain control mechanism, it's to decrease the gain gradually as automatically entering an attack time, or to increase the gain gradually as performing a conventional auto-gain control procedure including entering a release time. The claimed method can modulate the gain automatically by predicting the gain, and confine the signals under a threshold. In addition to avoid sawtooth phenomena, the method can stabilize the signals. | 05-26-2011 |
Chun-Ming Su, Kaohsiung City TW
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20100181634 | METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES - Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other. | 07-22-2010 |
20100181635 | METHOD AND STRUCTURE FOR REDUCING CROSS-TALK IN IMAGE SENSOR DEVICES - Provided is a method of fabricating an image sensor device. The method includes providing a semiconductor substrate having a front side and a back side, forming a first isolation structure at the front side of the semiconductor substrate, thinning the semiconductor substrate from the back side, and forming a second isolation structure at the back side of the semiconductor substrate. The first and second isolation structures are shifted with respect to each other. | 07-22-2010 |
Guo-Cai Su, Kaohsiung City TW
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20090069103 | PUNCH AND RELATED RECESSED SCREW - The present invention pertains to a punch for forming recessed screw comprising a punch body and a punch head. Particularly, the punch head includes two square portions having different heights and square sides and intersecting at an included angle, thereby punching the corresponding tiers of recesses in the socket of the screw head. In this manner, the screw can be facilely driven by a screwdriver presenting a square configuration or a uniform shape as the punch, which facilitates to reduce the problem of unfitted driving tool and increase the convenience while in operation. | 03-12-2009 |
20090169334 | Bimate screw - The present invention pertains to a bimate screw providing with a first section alternating with a second threaded section; wherein, the second threaded section has a smaller outer diameter than the first threaded section, and further a plurality of concavities are disposed on each thread of the second threaded section for defining two flanks therein. In this manner, both the first and the second threaded sections facilitate to sever and shatter cuttings so as to reduce the screwing resistance and prevent the object from being damaged under the accumulation of cuttings; simultaneously, the bimate screw effectively attains to a good resistance of extraction from the object by the concavities receiving the remaining cuttings which are not guided out of the object. | 07-02-2009 |
20110280685 | SCREW WITH LOW DRILLING RESISTANCE - A screw with low drilling resistance comprises a head portion, a shank portion, a plurality of first threads, a drilling portion, and a plurality of second threads. Wherein, a plurality of opening slots are correspondingly defined on the second threads, and a first included angle of the first threads is smaller than a second included angle of the second threads. Thereby, the opening slots on the second threads efficiently provide the first threads with an auxiliary cutting effect and preferably offers a debris accommodating room. The first threads including the smaller first included angle favorably reinforce the bearing force of the second threads including the larger second included angle, thereby promoting the cutting effect of the screw and allowing a speedy screwing. | 11-17-2011 |
Hsin-Lung Su, Kaohsiung City TW
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20080316140 | Antenna Apparatus and Antenna Radome and Design Method Thereof - An antenna radome is associated with an antenna and comprises a plurality of radome elements arranged in an array. Each radome element comprises a dielectric substrate on which an upper surface is provided with a first fractal inductor layout and a lower surface is provided with a second fractal inductor layout. The second fractal inductor layout comprises a first inductor and a second inductor. The first inductor and second inductor are associated to accumulate charges so as to increase radiation directionality of the antenna. | 12-25-2008 |
20100225563 | DUAL POLARIZATION ANTENNA STRUCTURE, RADOME AND DESIGN METHOD THEREOF - A dual polarization antenna radome includes a plurality of dielectric substrates. Each dielectric substrate provides a plurality of metal totems, and the pattern of the metal totems is unchanged after the metal totems rotate by 90 degrees around the axis perpendicular to the dielectric substrate. | 09-09-2010 |
20100295739 | RADIATION PATTERN INSULATOR AND MULTIPLE ANTENNAE SYSTEM THEREOF AND COMMUNICATION DEVICE USING THE MULTIPLE ANTENNAE SYSTEM - A radiation pattern insulator and an antennae system thereof are proposed. The radiation pattern insulator includes a dielectric substrate and a plurality of radiation pattern insulation elements. The dielectric substrate allocated between a plurality of antennae includes a top surface and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions of electromagnetic waves radiated from the antennae. In addition, the radiation pattern insulation elements are allocated on the top surface or the bottom surface of the dielectric substrate, or alternatively, all allocated on the top surface and the bottom surface. | 11-25-2010 |
20120105295 | STRUCTURE FOR ADJUSTING AN EM WAVE PENETRATION RESPONSE AND ANTENNA STRUCTURE FOR ADJUSTING AN EM WAVE RADIATION CHARACTERISTIC - A structure for adjusting electromagnetic wave (EM wave) penetration response includes a plurality of structure units and a dielectric substrate with an upper surface and a lower surface. The structure units are disposed on the upper surface and/or the lower surface. The structure unit consists of metal lines or complementary slits so as to enable an EM wave penetration response of the structure to include a pass band and a stop band. The frequency of the stop band is higher than that of the pass band. If a distance between the structure and an object with a high dielectric constant is longer than a predetermined distance, the pass band covers a radiation frequency of an antenna. If the distance between the structure and the object with the high dielectric constant is within the predetermined distance, the stop band covers the radiation frequency of the antenna. | 05-03-2012 |
20140111398 | RADIATION PATTERN INSULATOR AND MULTIPLE ANTENNAE SYSTEM THEREOF AND COMMUNICATION DEVICE USING THE MULTIPLE ANTENNAE SYSTEM - A radiation pattern insulator and an antennae system thereof are proposed. The radiation pattern insulator includes a dielectric substrate and a plurality of radiation pattern insulation elements. The dielectric substrate allocated between a plurality of antennae includes a top surface and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions of electromagnetic waves radiated from the antennae. In addition, the radiation pattern insulation elements are allocated on the top surface or the bottom surface of the dielectric substrate, or alternatively, all allocated on the top surface and the bottom surface. | 04-24-2014 |
Hsin-Yuan Su, Kaohsiung City TW
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20100276677 | ORGANIC LIGHT-EMITTING DEVICE - Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between | 11-04-2010 |
20110069000 | SYSTEM FOR DISPLAYING IMAGES - A system for displaying images is provided. The system includes a full-color organic electroluminescent device having a bottom substrate. A reflection layer, a first transparent electrode, an organic electroluminescent unit, and a second transparent electrode are sequentially disposed on the bottom substrate. Particularly, a light enhancing layer is disposed between the bottom substrate and the first transparent electrode. | 03-24-2011 |
20140361282 | ORGANIC LIGHT-EMITTING DEVICE - Disclosed is an organic light-emitting device (OLED), wherein a lower electrode, an organic emitting unit, an upper electrode, and a light enhance layer are subsequently formed between a bottom substrate and a top substrate. The light enhance layer has higher refractive index, between 2 and 3, than that of the top substrates, thereby efficiently improving the luminance intensity of the OLED. | 12-11-2014 |
Huang-Jia Su, Kaohsiung City TW
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20130089390 | STRUCTURE OF SELF-DRILLING SCREW - A self-drilling screw includes a head having a circumferential surface around which a helical thread is formed and a body mounted to the head. The body has an end forming a cylindrical chisel tip section, which forms a conic surface facing outward. Two chip discharging channels are formed in the chisel tip section, and each chip discharging channels forms an external cutting edge at a connection thereof with the conic surface. The conic surface and the external cutting edges have a connection interface therebetween in which an inverted V-shaped notch is formed. The notch has two sides each forming an internal cutting edge. The notch forms two sharp points with respect to the external cutting edges, whereby the two sharp points are each associated with the respective external cutting edge and the respective internal cutting edge. Each of the sharp points forms an included angle, which ranges between 15°-135°. | 04-11-2013 |
Hui-Hsiung Su, Kaohsiung City TW
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20100242862 | Steam Box Having An Energy-Saving Function - A steam box includes a container having an inner portion provided with a receiving chamber which has a bottom provided with a water tank. The container has a lower portion provided with a receiving space located under the water tank to receive a burner. The container is provided with an inner water storage conduit, an outer water storage conduit and an air draining channel located between the inner water storage conduit and the outer water storage conduit. Thus, waste air produced by the burner during the heating process is disposed at a higher temperature and can be reused to heat the water in the inner water storage conduit and the outer water storage conduit and to increase the temperature of the water in the water tank so as to shorten the heating time of the steam box. | 09-30-2010 |
20100242946 | Steam Case Having An Energy-Saving Function - A steam case includes a case body having an inner portion provided with a receiving chamber which has a bottom provided with a water tank. The case body has a lower portion provided with a receiving space located under the water tank to receive a burner. The case body is provided with an inner water storage conduit, an outer water storage conduit and an air draining channel located between the inner water storage conduit and the outer water storage conduit. Thus, the waste air produced by the burner during the heating process is kept at a higher temperature and can be reused to heat the water in the inner water storage conduit and the outer water storage conduit and to increase the temperature of the water in the water tank so as to shorten the heating time of the steam case. | 09-30-2010 |
Hui-Yuan Su, Kaohsiung City TW
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20120181824 | SEAT ADJUSTING MODULE - A seat adjusting module suitable to connect the saddle including at least a seat rail and a seat tube of a bicycle is provided, wherein the module includes a base assembled to an end of the seat tube, a clamp unit including two clamp elements and a fastening unit including two fasteners. The first clamp element has at least a first clamp portion and a shaft portion matched to the base at a first or a second position so as to rotate relatively to the base on a first or a second rotation axis. The second clamp element has at least a second clamp portion, which with the first clamp portion together clamps the seat rail. The two fasteners together fasten the two clamp elements to the base so that the first and second clamp portions together clamp tightly the seat rail. | 07-19-2012 |
Hung-Yu Su, Kaohsiung City TW
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20120325170 | STRUCTURE OF DRIVING MEMBER FOR VARIABLE VALVE OF ENGINE - Disclosed is a structure of driving member for variable valve of engine, in which a first intake cam, an exhaust cam, and a second intake cam are mounted, in such an order, to a camshaft. An intake valve driving member has first and second driving members respectively in rolling engagement with the first and second intake cams. The first driving member forms a through hole. The second driving member forms a through hole. The interconnection member forms a through hole. The through holes are connected to and communicate with each other to form a hydraulic cylinder, which receives therein at least one piston that is movable to selectively locate between the first driving member and the interconnection member or between the second driving member and the interconnection member to change the lift of an intake valve. | 12-27-2012 |
Jau-Rong Su, Kaohsiung City TW
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20090247702 | GAS BARRIER FILM - A film used for tires is provided. The film includes a thermoplastic elastomer, a polyolefin resin and a processing oil. The film has physical properties which are in a specific range. The air maintenance of a general tubeless tire would be improved after the film being adhered to the inside of the general tubeless tire. Furthermore, the general tire which the film adhered thereto would be provided with all the properties of a tubeless tire. | 10-01-2009 |
Jin-Lian Su, Kaohsiung City TW
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20140015008 | Transient Voltage Suppressor Circuit, and Diode Device Therefor and Manufacturing Method Thereof - The present invention discloses a transient voltage suppressor (TVS) circuit, and a diode device therefor and a manufacturing method thereof. The TVS circuit is for coupling to a protected circuit to limit amplitude of a transient voltage which is inputted to the protected circuit. The TVS circuit includes a suppressor device and at least a diode device. The diode device is formed in a substrate, which includes: a well formed in the substrate; a separation region formed beneath the upper surface; a anode region and a cathode region, which are formed at two sides of the separation region beneath the upper surface respectively, wherein the anode region and the cathode region are separated by the separation region; and a buried layer, which is formed in the substrate below the well with a higher impurity density and a same conductive type as the well. | 01-16-2014 |
20140175545 | DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: a first conductive type substrate, a second conductive type high voltage well, a gate, a first conductive type body region, a second conductive type source, a second conductive type drain, a first conductive type body electrode, and a first conductive type floating region. The floating region is formed in the body region, which is electrically floating and is electrically isolated from the source and the gate, such that the electrostatic discharge (ESD) effect is mitigated. | 06-26-2014 |
Johnson Su, Kaohsiung City TW
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20140090440 | Method for Manufacturing a Damping Shaft Sleeve - This invention relates to a method for manufacturing a damping shaft sleeve that includes: forging a base material into a billet that includes a cylindrical body having two opposite ends and an annular flange formed on one of the opposite ends; forging a shaft hole in the cylindrical body; inverting the base material and forming two annular grooves that are respectively indented from two opposite surfaces of the annular flange; forging the billet to form the annular flange into a bottom wall and a side wall, the bottom wall cooperating with the side wall to form an asymmetrical and helical groove; and forging the shaft hole to pass through the cylindrical body of the billet. | 04-03-2014 |
Kai-Yuan Su, Kaohsiung City TW
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20100270714 | Apparatus for observing interior of a blast furnace system - An apparatus for observing the interior of a blast furnace system includes a visible light guiding unit which defines a light path along a viewing axis that is radial to an upright axis of a furnace wall body of a blast furnace and which is adapted to be secured to a furnace blowpipe to permit the light path to be in visual communication with a tuyere, a beam splitter which is disposed in an accommodation space in the tubular mount to split a beam of light propagating along the light path into a horizontal component so that the operator can observe furnace condition through a peeping hole, and a vertical component, and a video camera system which includes an elongate casing connected to the tubular mount, and a video camera disposed in a cooling chamber of the casing to capture a light image from the vertical component of the light beam. | 10-28-2010 |
Keng Kuei Su, Kaohsiung City TW
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20080284894 | DEVICE CAPABLE OF IMAGE CAPTURING AND IMAGE PROJECTION - A device capable of image capturing and image projection includes a housing, an image capturing module, an image projecting module, and a control unit. The image capturing module is mounted to the housing and is operable to capture an image. The image projecting module is mounted to the housing and is operable to project the image captured by the image capturing module. The control unit is mounted in the housing, is coupled to the image capturing module and the image projecting module, and is operable to control operations of the image capturing module and the image projecting module. | 11-20-2008 |
20080294821 | Series-Connected Control System - A control system includes a host device and a string of slave devices coupled in series. The host device includes a first transmission unit operable to transmit an encoded control signal provided by a first processing module, and to receive an encoded feedback signal for subsequent decoding by the first processing module. Each of the slave devices includes: a driven member responsive to a driving signal for generating an event; a driving unit operable to provide the driving signal; a detection unit generating an initial feedback signal based on the event; a second processing module capable of decoding the encoded control signal so as to drive the driving unit when an address code in the encoded control signal corresponds to the slave device, and of generating the encoded feedback signal; and a second transmission unit operable to receive the encoded control signal, and to transmit the encoded feedback signal. | 11-27-2008 |
20100142628 | REMOTE ANTIJAMMING TRANSMISSION DEVICE AND METHOD FOR THE SAME - A remote antijamming transmission device and method for the same is provided. A signal current transmission line is between the host and the sub-machine arranged along a path of signal current transmission line and kept at a distance from the signal current transmission line. The sub-machine comprises a signal sensor component. The interval is a range where the signal sensor component may sense a signal current transmitted by the host connected to the sub-machine in a non-contact manner. Thus, no load effect is caused. The signal current transmitted by the host is not attenuated due to current bypass, so the effect of remote transmission is achieved. The transmission current in the signal current transmission line does not make the transmission signal to be attenuated even if the amount of sub-machines increases and then the current is divided. Unlimited amounts of sub-machines may be arranged near the signal current transmission line. | 06-10-2010 |
Kou-Tsair Su, Kaohsiung City TW
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20130243547 | SCREW CAPABLE OF RAPIDLY DRILLING AND CUTTING - A screw capable of drilling and cutting includes two inclined cutting planes with a cutting edge formed on a convergence of the cutting planes. A tapered positioning member extends from the convergence of the cutting planes, where the cutting edge is divided into dual sub cutting edges by means of the positioning member. Each sub cutting edge has an inclined angle. An included angle included by the sub cutting edges is smaller than 180 degrees. Threads spiral on a shank and extend to the sub cutting edges. Setting the positioning member against on an object permits a steady performance during the first stage of screwing. Subsequently, the sub cutting edges provides a scraping effect on the object during drilling. Torque is reduced and drilling speed is promoted. | 09-19-2013 |
20140064878 | SCREW - A screw includes a positioning member defined on inclined cutting planes of a drilling portion of the screw for allowing a cutting edge constructed at a convergence of the cutting planes to cut stably and efficiently. A main threaded section formed on a shank of the screw is extended to connect with one end of the cutting edge. The positioning member helps the screw fixedly stand on an object. The cutting edge and the cutting planes allow cutting debris to be swiftly and smoothly extruded therefrom into the main threaded section for avoiding the accumulation of considerable cutting debris. Thereby, the screwing resistance is reduced and the drilling speed is promoted. Preferably, the fastened screw is firmly sunk in the object, and the fastening operation is completed successfully. | 03-06-2014 |
20140178149 | FASTENER CAPABLE OF SPEEDILY SCREWING - A fastener capable of speedily screwing provides a plurality of blocks on a bottom surface of a head and an accommodating area formed between any two adjacent blocks. Each block includes a first wall arranged at one side of the accommodating area and extended upward from the bottom surface, a second wall extending from the first wall to the other side of another adjacent accommodating area, and a cutting edge formed at a convergence of the first wall and the second wall. In screwing, the blocks assist in cutting to achieve a speedy screwing effect, and the accommodating area allows the cutting debris generated accordingly to be received therein so as to remain a firm engaging force between the fastener and an object. Further, there is no extra cutting debris protruding out of the object after screwing, which increases the flatness, and also enhances the screwing force of the fastener. | 06-26-2014 |
20140178150 | WOOD SCREW - A wood screw provides a plurality of auxiliary cutting areas disposed on a bottom surface of a head and a flat area formed in any two adjacent auxiliary cutting areas. Each auxiliary cutting area includes at least two cutting grooves disposed at intervals and formed on the bottom surface, and a cutting edge formed at a convergence of the connective cutting grooves. When the bottom surface contacts the surface of the wood, the cutting edge cuts and scrapes off burrs generated around the drilling hole, and the scraped burrs are accommodated in the cutting grooves to prevent the burrs from exposing to the head after screwing. Further, the head is tightly screwed on the wood to enhance the screwing stabilization. | 06-26-2014 |
20150017051 | METHOD OF SPEEDILY FORMING DENTAL IMPLANT AUXILIARY DEVICES - A method of speedily forming dental implant auxiliary devices comprises a tooth mold reproducing step, a processing drawing setting step, and a formation step. In the tooth mold producing step, a buccal mold is made according to a shape of an oral cavity; in the processing drawing setting step, an implant marked object is designed in respect to the buccal mold for setting a three-dimensional processing drawing of a dental implant auxiliary device; and in the formation step, the drawing is input to a laser sintering and forming system, so that the system directly and quickly forms and shapes the implant fixing device according to the three-dimensional drawing. The method reduces the manufacture time effectively and increases the manufacture precision, which allows the metal implant to be correctly implanted in surgery for enhancing a success rate of the surgery and reducing manufacture costs. | 01-15-2015 |
20150017605 | DENTAL IMPLANT WITH HIGH COMBINING STABILITY - A dental implant comprises a shank and a threaded section spirally disposed on the shank. The shank includes a first section extending from a first end toward a second end of the shank and a second section connecting the first section and extending to the second end. A shank diameter of a connecting part where the first and the second sections are connected is smaller than that of the second section, whereby the subject configuration increases an implant-fastening feel of dentists and an initial implanting stability efficiently while implanting the dental implant into an alveolar bone. When the dental implant is enclosed by a growth of the bone, the second section is firmly fixed by the bone to prevent the dental implant from loosening due to an inverse torque derived from the mastication and allow it to be firmly embedded in the bone to increase the combining stability. | 01-15-2015 |
Meng-Peng Su, Kaohsiung City TW
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20130220796 | COMPOSITE TARGET AND METHOD FOR MANUFACTURING THE SAME - A composite target and method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least haying a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and/or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the first magnetic field line distribution. | 08-29-2013 |
Ming-Chiuan Su, Kaohsiung City TW
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20140064423 | CLOCK AND DATA RECOVERY CIRCUIT SELECTIVELY CONFIGURED TO OPERATE IN ONE OF A PLURALITY OF STAGES AND RELATED METHOD THEREOF - An exemplary clock and data recovery circuit includes a serial data input node arranged for receiving a serial data; a reference clock input node arranged for receiving a reference clock; a control circuit arranged for generating a control signal to selectively configure the clock and data recovery to operate in one of a plurality of phases; a detective circuit arranged for generating a first adjusting signal while the clock and data recovery operates in a frequency locking phase, and for generating a second adjusting signal while the clock and data recovery circuit operates in a clock and data recovery phase; and a controllable oscillator arranged for generating a recovered clock according to the first adjusting signal in the frequency locking phase, and for generating the recovered clock according to the second adjusting signal in the clock and data recovery phase. | 03-06-2014 |
Pei-Chi Su, Kaohsiung City TW
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20120256068 | ELECTRONIC DEVICE SUPPORTING BASE - An electronic device supporting base including a supporting bracket and a fixed base is provided. A first pivoting portion for being pivoted to the fixed base is disposed at one end of the supporting bracket, a second pivoting portion for being pivoted to a positioning plate is disposed at the other end of the supporting bracket, and an accommodating groove is disposed on the fixed base for insertion of an electronic device therein, so that when the electronic device is obliquely placed on a tabletop, the supporting bracket and the positioning plate can be rotated to support the electronic device, and when the electronic device is carried, the supporting bracket and the positioning plate can be rotated to be flatly attached to the back side of the electronic device. | 10-11-2012 |
Pin-Ching Su, Kaohsiung City TW
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20140193098 | Image Processing Method and Image Processing Device Thereof for Image Alignment - An image processing method for image alignment, includes sequentially receiving a plurality of images; generating at least one threshold corresponding to each image according to a plurality of intensities of each image of the plurality of images; converting each image according to the thresholds of each image, for generating a plurality of binary images; acquiring a plurality of characteristic pixels of each binary image according to the plurality of binary images; and aligning the plurality of images according to the plurality of characteristic pixels of each binary image. | 07-10-2014 |
Ping-Yuan Su, Kaohsiung City TW
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20140176484 | CAPACITIVE TOUCH DISPLAY APPARATUS - A capacitive touch display apparatus includes a liquid crystal (LC) display module, a touch panel and a judgment unit. The LC display module includes an active device array substrate, a color filter (CF) substrate, and an LC layer disposed between inner sides of the two substrates. The touch panel includes a single touch sensing layer fabricated on an outer side of the CF substrate and a cover lens disposed on the single touch sensing layer. The single touch sensing layer includes a transmitter patterned electrode and multiple receiver patterned electrodes. A same inductive capacitor is formed between each receiver patterned electrode and the transmitter patterned electrode. The judgment unit transmits a scan signal to the transmitter patterned electrode, and determines whether there is an occurrence of a single-touch event or a multi-touch event by analyzing inductive signals from the respective receiver patterned electrodes. | 06-26-2014 |
20140204049 | DISPLAY APPARATUS WITH TOUCH SENSING FUNCTION - The invention provides a display apparatus including a display panel, a display driving circuit and a touch sensing circuit. The display panel has a plurality of pixels arranged in an array, in which each of the pixels includes a liquid crystal capacitor. The display driving circuit is coupled to the display panel and configured to drive the pixels during a display period in a frame period to display images on the display panel. The touch sensing circuit is coupled to the display panel and configured to sense capacitance variations of the liquid crystal capacitors during a blanking period in the frame period, so as to generate a touch information. | 07-24-2014 |
20140313436 | TOUCH-SENSING LIQUID CRYSTAL PANEL AND FABRICATION METHOD THEREOF - A touch-sensing liquid crystal panel and a fabrication method thereof are provided. The touch-sensing liquid crystal panel includes a color filter substrate, a transistor substrate, and a sensing matrix. In the fabrication method, at first, a first glass substrate is provided. Then, color filters and a common electrode are disposed on a first surface of the first glass substrate to form a color filter substrate. Thereafter, a transistor substrate is combined with the color filter substrate. Then, the glass substrates of the color filter substrate and the transistor substrate are slimed. Thereafter, a sensing layer is formed on a second surface of the first glass substrate, wherein the second surface is opposite to the first surface. Then, the sensing layer is baked to enable a sheet resistance of the sensing matrix to be equal to or less than 30 ohm/square. Thereafter, the sensing layer is patterned. | 10-23-2014 |
20140333847 | TOUCH PANEL AND TOUCH DISPLAY - A touch panel that includes a first substrate, a touch sensing layer, a compensation pattern layer, a second substrate, and a first optical adhesive layer is provided. The touch sensing layer includes a plurality of electrode sets arranged in parallel, and each of the electrode sets includes a scan electrode and a plurality of sensing electrodes. An orthogonal projection of the touch sensing layer on the first substrate is not overlapped with an orthogonal projection of the compensation pattern layer on the first substrate. The compensation pattern layer and the touch sensing layer are located between the first substrate and the second substrate. The first optical adhesive layer is located between the first substrate and the second substrate. A touch display is also provided. | 11-13-2014 |
20140368752 | TOUCH-SENSING LIQUID CRYSTAL PANEL - A touch-sensing liquid crystal panel is provided and includes a color filter substrate and a transistor substrate. The color filter substrate includes a first substrate, a sensing array, touch-sensing circuit contact pads, and color filters. The transistor substrate includes a second substrate and pixel units. In one embodiment, the first substrate has a first edge region and a second edge region having the same width. In another embodiment, the touch-sensing circuit contact pads are disposed at the first edge region and the second edge region of the first substrate, and each conductive pattern in the sensing array is connected to the touch-sensing circuit contact pads of the first edge region and the second edge region. In another embodiment, each conductive pattern of the sensing array includes two first conductive patterns and conductive pattern rows disposed between the first conductive patterns. | 12-18-2014 |
20140375906 | TOUCH-SENSING LIQUID CRYSTAL PANEL AND FABRICATION METHOD THEREOF - A touch-sensing liquid crystal panel and a fabrication method thereof are provided. The touch-sensing liquid crystal panel includes a color filter substrate and a transistor substrate. In the fabrication method, at first, a first glass substrate is provided. Thereafter, a sensing matrix is formed on a first surface of the first glass substrate at a baking temperature. The sensing matrix is formed from indium tin oxide (ITO), and a sheet resistance of the sensing matrix is equal to or less than 30 ohm/square. Then, color filters and a common electrode are disposed on a second surface of the first glass substrate to form a color filter substrate, wherein the second surface is opposite to the first surface. Thereafter, the transistor substrate is provided and combined with the color filter substrate. Thereafter, a slimming process is performed to slim a second glass substrate of the transistor substrate. | 12-25-2014 |
Po-Wen Su, Kaohsiung City TW
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20130270613 | METHOD OF TRIMMING SPACERS AND SEMICONDUCTOR STRUCTURE THEREOF - A method of trimming spacers includes etching a silicon oxide spacer when forming an outmost spacer, so that a silicon carbon nitride spacer contacting the gate electrode exposes an area. The exposure area of the silicon carbon nitride spacer can then be partly removed by phosphate acid. At the end of the semiconductor process, at least part of the top surface of the silicon carbon nitride spacer will be lower than the top surface of a gate electrode. | 10-17-2013 |
20140306272 | METHOD OF FORMING A FINFET STRUCTURE - A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor. | 10-16-2014 |
20140308761 | Sidewall Image Transfer Process - A sidewall image transfer (SIT) process is provided. First, a substrate is provided. A sacrificial layer having a pattern is formed on the substrate. A first measuring step is performed to measure a width of the pattern of the sacrificial layer. A material layer is formed conformally on the sacrificial layer, wherein a thickness of the material layer is adjusted according to the result of the first measuring step. Then, the material layer is removed anisotropically, so the material layer becomes a spacer on a sidewall of the sacrificial layer. Lastly, the sacrificial layer is removed. | 10-16-2014 |
20140367798 | NON-PLANAR TRANSISTOR - A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor. | 12-18-2014 |
Shih-Feng Su, Kaohsiung City TW
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20090035915 | METHOD OF HIGH DENSITY PLASMA GAP-FILLING WITH MINIMIZATION OF GAS PHASE NUCLEATION - A method of high density plasma (HDP) gap-filling with a minimization of gas phase nucleation (GPN) is provided. The method includes providing a substrate having a trench in a reaction chamber. Next, a first deposition step is performed to partially fill a dielectric material in the trench. Then, an etch step is performed to partially remove the dielectric material in the trench. Thereafter, a second deposition step is performed to partially fill the dielectric material in the trench. A reaction gas used in the second deposition step includes a carrier gas, an oxygen-containing gas, a silicon-containing gas, and a hydrogen-containing gas. After the carrier gas and oxygen-containing gas are introduced into the reaction chamber and a radio frequency (RF) power is turned on for a period of time, the silicon-containing gas and hydrogen-containing gas are introduced into the reaction chamber. | 02-05-2009 |
Shih-Hao Su, Kaohsiung City TW
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20130137256 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. The prior steps include: a first gate including a first cap layer and a second gate including a second cap layer are formed on a substrate. A hard mask layer is formed to cover the first gate and the second gate. The material of the hard mask layer is different from the material of the first cap layer and the second cap layer. The hard mask layer is removed entirely after a lithography process and an etching process are performed. The following steps include: a material is formed to entirely cover the first gate and the second gate. The material, the first gate and the second gate are etched back to make the first gate and the second gate have the same level and expose layers in both of them. | 05-30-2013 |
20130234216 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PMOS DEVICE FABRICATED BY THE METHOD - A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed. | 09-12-2013 |
Sin-Han Su, Kaohsiung City TW
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20130056411 | WASTEWATER TREATMENT METHOD USING ANNULARLY ARRANGED MICROORGANISM CARRIERS - A wastewater treatment method using annularly arranged microorganism carriers in a reaction tank, which defines therein an upper reaction area, a lower reaction area and a passage area surrounded by the microorganism carriers and kept in communication between the upper reaction area and the lower reaction area. Microorganisms including nitrifying bacteria and autotrophic denitrifying bacteria are attached to the surface of each microorganisms carriers and suspending in the water of the reaction tank for causing Anammox reaction to convert NH | 03-07-2013 |
Siou-Cing Su, Kaohsiung City TW
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20110097782 | METHOD, AGENT, AND KIT FOR ISOLATING NUCLEIC ACIDS - A method for isolating nucleic acids is provided. The method includes providing a biological sample containing at least one nucleic acid, and mixing the biological sample with an isolating agent under a suitable condition to isolate the nucleic acids from the biological sample in single step, wherein the isolating agent contains 1-40 wt % of PEG and/or more than 30 wt % of low molecular weight alcohol, a salt, and a detergent. Isolated nucleic acids are bound to a solid support by changes in the solubility of nucleic acids. Additionally, the present invention further provides an isolating agent and kit for isolating nucleic acids. | 04-28-2011 |
Wen-Ku Su, Kaohsiung City TW
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20100131807 | DECODING ALGORITHM FOR QUADRATIC RESIDUE CODES - A decoding algorithm for quadratic residue codes applicable to the decoding of all quadratic residue codes is provided. The decoding algorithm employs digital signals to obtain a plurality of known syndromes. These known syndromes are used to calculate a plurality of unknown syndromes. The inverse-free Berlekamp-Massey algorithm is then used to calculate the error polynomial, after which the Chien search algorithm is used to determine the error locations. Adjustments can then be made to the digital signal bits corresponding to the error locations to obtain the correct code. | 05-27-2010 |
Wen-Ming Su, Kaohsiung City TW
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20080264707 | COOLING STRUCTURE FOR A CONTINUOUS VARIATION TRANSMISSION SYSTEM OF AN ALL-TERRAIN VEHICLE - A cooling structure for a continuous variation transmission system of an all-terrain vehicle which includes a radiator mounted at a front end of the vehicle and under a front body cover, a hood enclosing the radiator, a gearbox having an inlet and an outlet, the inlet being connected with an inlet conduit for drawing outside cool air into the gearbox, the outlet being connected with an exhaust conduit for discharging hot air from the gearbox, wherein the inlet conduit has an inlet end mounted between the hood and the front body cover and shielded by the hood and the front body cover, whereby the cooling structure can effectively prevent water, dirt and dust from entering the gearbox and are simple in construction and easy to assemble and maintain. | 10-30-2008 |
20130104832 | VEHICLE AIR INTAKE MECHANISM | 05-02-2013 |
20130133322 | COOLING SYSTEM FOR AN EXHAUST PIPE OF A VEHICLE - A cooling system for an exhaust pipe of a vehicle has an engine, an exhaust discharging device connected to the engine, a generator driven by the engine and a cooling guide device. Even when the vehicle is idle, the cooling guide device still guides cool air from the generator to the exhaust discharging device to dissipate heat of the exhaust discharging device. Therefore, the heat of the exhaust discharging device is efficiently dissipated. | 05-30-2013 |
20130136580 | COOLING SYSTEM FOR A GENERATOR OF A VEHICLE - A cooling system for a generator of a vehicle has an engine, a generator and a wind collection box. The generator has a rotor driven by the engine and a fan synchronously rotating with the rotor. The wind collection box is connected to the generator via a first guiding tube. The fan draws exterior air from the wind collection box and the first guiding tube to allow the exterior air to flow through the generator. Thus, heat in the generator that is mounted in an airtight engine compartment is dissipated. | 05-30-2013 |
20130309955 | COOLING AIR INTAKE DEVICE FOR VEHICLE - A cooling air intake device is mounted to a frame of a vehicle and includes a base plate and an intake box. The intake box is mounted on the base plate that includes a first admission section and a blocking section adjacent to the first admission section. The intake box includes a first intake compartment and a second intake compartment. The first intake compartment corresponds to the first admission section of the base plate. The first intake compartment includes a first baffle plate mounted therein. The first intake compartment has a side wall in which a first discharge section is formed. The second intake compartment is arranged above the first intake compartment in such a way that a second baffle plate is arranged between the first intake compartment and the second intake compartment. The second intake compartment includes a second admission section and a second discharge section. | 11-21-2013 |
Yen-Hsun Su, Kaohsiung City TW
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20120246761 | ILLUMINATING DEVICE AND METHOD FOR PREPARING INORGANIC NANO-MATERIAL - A method for preparing an inorganic nano-material is provided. The method includes steps of providing a first solution including plural metal ions; mixing the first solution with a surfactant and adding a reduction agent to generate a second solution, wherein the second solution generates plural metal atoms reduced from the plural metal ions; and adding an oxidation agent into the second solution for oxidizing the plural metal atoms so as to generate plural metal oxides and form the inorganic nano-material. | 09-27-2012 |
Ying-Fang Su, Kaohsiung City TW
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20110244463 | METHOD FOR COLUMBIDAE GENDER IDENTIFICATION, NUCLEOTIDE SEQUENCE FOR COLUMBIDAE GENDER AND NUCLEOTIDE PRIMER PAIR FOR COLUMBIDAE GENDER - The invention provides a method for Columbidae gender identification including: providing a DNA sample of a bird belonging to the Columbidae family; performing a polymerase chain reaction to the DNA sample with a first primer pair of a first primer designed within the region of the SEQ ID. NO.: 9 or a complementary sequence thereof and a P2 primer (SEQ ID. NO: 1) or a complementary sequence thereof, and a second primer pair of a second primer designed within the region of the SEQ ID NO.: 10 or a complementary sequence thereof and a P2 primer (SEQ ID. NO: 1) or a complementary sequence thereof; and determining gender by performing a melting curve analysis to a product from the polymerase chain reaction, wherein the result showing two peaks indicate a female gender and showing one peak indicate a male gender. | 10-06-2011 |
Yi-Nien Su, Kaohsiung City TW
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20080277745 | FIN FILLED EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME - A fin field effect transistor and method of forming the same. The fin field effect transistor comprises a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further comprises shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further comprises a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure. | 11-13-2008 |
Yi-Yu Su, Kaohsiung City TW
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20140156864 | MULTIMEDIA STREAM BUFFER AND OUTPUT METHOD AND MULTIMEDIA STREAM BUFFER MODULE - A buffer and output method and a buffer module for a multimedia stream are provided, wherein multimedia stream packets are received and stored into a first buffer, and when an actual remaining time calculated according to an accumulated idle time and a buffer time, is greater than a remaining time threshold value, following steps are performed. A first present time is read, and a sleep instruction is executed, so as to wait for a preset idle time. A second present time is read, and an actual idle time different from the preset idle time is calculated according to the first present time and the second present time. A part of buffer units are enabled according to the accumulated idle time accumulated according to the actual idle time, to output the stored multimedia stream packets to a second buffer of a player. | 06-05-2014 |
You-Min Su, Kaohsiung City TW
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20100255408 | FUEL CELL STRUCTURE - A fuel cell structure mainly comprises a frame and a membrane electrode assembly. The frame has an inside wall, and the membrane electrode assembly comprises a first electrode, a second electrode, and an electrolyte membrane disposed between the first electrode and the second electrode. The electrolyte membrane having an electrode joint portion and an adhesive portion. The first electrode and the second electrode are laid on two opposite sides of the electrode joint portion separately. The adhesive portion is attached onto the inside wall. | 10-07-2010 |
Yu-Han Su, Kaohsiung City TW
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20100279029 | Method for coating nanometer particles - There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles. | 11-04-2010 |
20110027931 | Method for making solar cells with sensitized quantum dots in the form of nanometer metal particles - There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film. | 02-03-2011 |
Yu Jen Su, Kaohsiung City TW
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20100168591 | DROWSINESS DETECTION METHOD AND APPARATUS THEREOF - The apparatus comprises an ultra-wide band module or an electrocardiography module for gathering heartbeat signals of a human being. By sequentially obtaining average heart-rate values of a human being, and according to the features of the heart-rate values over a period of time, the method is utilized to determine whether the human being is going to a state of drowsiness. | 07-01-2010 |
20120165690 | METHOD FOR MEASURING PHYSIOLOGICAL PARAMETERS - A method for measuring physiological parameters uses statistical properties, spectrum analysis and feedback mechanisms to remove the signal noise generated by human body movement from a detected physiological signal. | 06-28-2012 |
20120165700 | INTESTINAL PERISTALSIS DETECTING DEVICE AND SYSTEM AND METHOD THEREOF - An intestinal peristalsis detecting device comprises a radio frequency (RF) signal generator, an antenna, and a mixer. After the RF signal generator sends a pulse signal, the antenna receives the pulse signal and emits a pulse electromagnetic wave to an organism. Thereafter, the antenna receives a response pulse electromagnetic wave reflected from the organism to generate a response pulse signal. The mixer couples with the RF signal generator and the antenna to mix the pulse signal and the response pulse signal. | 06-28-2012 |
20120296226 | PREDICTIVE DROWSINESS ALARM METHOD - A method for predicting drowsiness is disclosed. By obtaining average heart beat rate values of a driver, and according to the characteristics of the heart beat rate values over a period of time, the method is utilized to determine whether the human being is going to sleep. The method comprises the following steps: detecting a heart beat rate of a driver; calculating a curve of the heart beat rate average during a time interval of X minutes; determining an accumulated period of time during which the slope values of the linear regression equations are smaller than the predetermined slope value Z; determining whether the length of the accumulated period of time is greater than a time threshold T to generate a drowsiness detecting result; and determining whether to raise an alarm based on the drowsiness detecting result. | 11-22-2012 |
20130147653 | RADAR WAVE SENSING APPARATUS AND METHOD - A radar wave sensing apparatus including a rotation element, a nanosecond pulse near-field sensor and a control unit is provided. The nanosecond pulse near-field sensor emits an incident radar wave and receives a reflection radar wave of the incident radar wave hitting on a surface of the rotation element to obtain a repetition frequency variation of the reflection radar wave corresponding to the incident radar wave. The control unit calculates a vibration of the rotation element according to the repetition frequency variation. | 06-13-2013 |
Yu-Jung Su, Kaohsiung City TW
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20130243547 | SCREW CAPABLE OF RAPIDLY DRILLING AND CUTTING - A screw capable of drilling and cutting includes two inclined cutting planes with a cutting edge formed on a convergence of the cutting planes. A tapered positioning member extends from the convergence of the cutting planes, where the cutting edge is divided into dual sub cutting edges by means of the positioning member. Each sub cutting edge has an inclined angle. An included angle included by the sub cutting edges is smaller than 180 degrees. Threads spiral on a shank and extend to the sub cutting edges. Setting the positioning member against on an object permits a steady performance during the first stage of screwing. Subsequently, the sub cutting edges provides a scraping effect on the object during drilling. Torque is reduced and drilling speed is promoted. | 09-19-2013 |
20140064878 | SCREW - A screw includes a positioning member defined on inclined cutting planes of a drilling portion of the screw for allowing a cutting edge constructed at a convergence of the cutting planes to cut stably and efficiently. A main threaded section formed on a shank of the screw is extended to connect with one end of the cutting edge. The positioning member helps the screw fixedly stand on an object. The cutting edge and the cutting planes allow cutting debris to be swiftly and smoothly extruded therefrom into the main threaded section for avoiding the accumulation of considerable cutting debris. Thereby, the screwing resistance is reduced and the drilling speed is promoted. Preferably, the fastened screw is firmly sunk in the object, and the fastening operation is completed successfully. | 03-06-2014 |
20140178149 | FASTENER CAPABLE OF SPEEDILY SCREWING - A fastener capable of speedily screwing provides a plurality of blocks on a bottom surface of a head and an accommodating area formed between any two adjacent blocks. Each block includes a first wall arranged at one side of the accommodating area and extended upward from the bottom surface, a second wall extending from the first wall to the other side of another adjacent accommodating area, and a cutting edge formed at a convergence of the first wall and the second wall. In screwing, the blocks assist in cutting to achieve a speedy screwing effect, and the accommodating area allows the cutting debris generated accordingly to be received therein so as to remain a firm engaging force between the fastener and an object. Further, there is no extra cutting debris protruding out of the object after screwing, which increases the flatness, and also enhances the screwing force of the fastener. | 06-26-2014 |
20140178150 | WOOD SCREW - A wood screw provides a plurality of auxiliary cutting areas disposed on a bottom surface of a head and a flat area formed in any two adjacent auxiliary cutting areas. Each auxiliary cutting area includes at least two cutting grooves disposed at intervals and formed on the bottom surface, and a cutting edge formed at a convergence of the connective cutting grooves. When the bottom surface contacts the surface of the wood, the cutting edge cuts and scrapes off burrs generated around the drilling hole, and the scraped burrs are accommodated in the cutting grooves to prevent the burrs from exposing to the head after screwing. Further, the head is tightly screwed on the wood to enhance the screwing stabilization. | 06-26-2014 |
20150017051 | METHOD OF SPEEDILY FORMING DENTAL IMPLANT AUXILIARY DEVICES - A method of speedily forming dental implant auxiliary devices comprises a tooth mold reproducing step, a processing drawing setting step, and a formation step. In the tooth mold producing step, a buccal mold is made according to a shape of an oral cavity; in the processing drawing setting step, an implant marked object is designed in respect to the buccal mold for setting a three-dimensional processing drawing of a dental implant auxiliary device; and in the formation step, the drawing is input to a laser sintering and forming system, so that the system directly and quickly forms and shapes the implant fixing device according to the three-dimensional drawing. The method reduces the manufacture time effectively and increases the manufacture precision, which allows the metal implant to be correctly implanted in surgery for enhancing a success rate of the surgery and reducing manufacture costs. | 01-15-2015 |
20150017605 | DENTAL IMPLANT WITH HIGH COMBINING STABILITY - A dental implant comprises a shank and a threaded section spirally disposed on the shank. The shank includes a first section extending from a first end toward a second end of the shank and a second section connecting the first section and extending to the second end. A shank diameter of a connecting part where the first and the second sections are connected is smaller than that of the second section, whereby the subject configuration increases an implant-fastening feel of dentists and an initial implanting stability efficiently while implanting the dental implant into an alveolar bone. When the dental implant is enclosed by a growth of the bone, the second section is firmly fixed by the bone to prevent the dental implant from loosening due to an inverse torque derived from the mastication and allow it to be firmly embedded in the bone to increase the combining stability. | 01-15-2015 |
Yung-Fa Su, Kaohsiung City TW
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20130104292 | BELT | 05-02-2013 |
20130276269 | BELT BUCKLE STRUCTURE - A belt buckle structure includes a buckle and a circular element. The buckle has a surface with a recess formed thereon. A first step surface and a second step surface in the recess are formed at different elevations. The second step surface is at a higher elevation and has a first positioning magnet and a second positioning magnet located thereon. The circular element slides clockwise or counterclockwise to be positioned at a desired location in the recess, and can be removed or positioned as desired whenever needed by users. Thus the functionality of the belt can be increased, and the difficulty of positioning the graphic on the top surface of the circular element in the correct alignment can be resolved. | 10-24-2013 |
20130291347 | BELT BUCKLE WITH A MAGNETIC ATTRACTION SURFACE MADE IN SIMPLE FABRICATION - A belt buckle with a magnetic attraction surface made in simple fabrication is made of a magnetic metal material and has an indented holding trough on a surface with at least one upward opening. The holding trough has a magnetic attraction surface on an inner end surface and two side walls at two sides thereof. The holding trough holds an ornamental article which has at least one magnet located thereon to be attracted to the magnetic attraction surface. The magnetic attraction surface can attract various types of ornamental articles formed in irregular shapes. When the ornamental article includes a plurality of magnets to form multiple magnetic attraction spots, it can be easily and securely attracted to the magnetic attraction surface. As the holding trough can be formed by stamping once, fabrication process is simpler, thus can reduce production time and cost and improve practicality and usability. | 11-07-2013 |
20140053316 | SUN HAT - A sun hat includes a hat body which has a crown portion, a peak portion extended forwards from the bottom of the crown portion and an annular brim portion extended rearwards from two sides of the peak portion. The brim portion is embedded with at least one flexible wire set by stitching. The sun hat thus formed not only can block sunshine, the brim portion also can be flipped upwards in a set profile through the flexible wire embedded inside, hence provides improved air ventilation to enhance comfort and usability. | 02-27-2014 |