Patent application number | Description | Published |
20080265381 | SiCOH DIELECTRIC - A porous composite material useful in semiconductor device manufacturing, in which the diameter (or characteristic dimension) of the pores and the pore size distribution (PSD) is controlled in a nanoscale manner and which exhibits improved cohesive strength (or equivalently, improved fracture toughness or reduced brittleness), and increased resistance to water degradation of properties such as stress-corrosion cracking, Cu ingress, and other critical properties is provided. The porous composite material is fabricating utilizing at least one bifunctional organic porogen as a precursor compound. | 10-30-2008 |
20080303068 | FIELD EFFECT TRANSISTOR USING CARBON BASED STRESS LINER - A stress liner for use within a semiconductor structure that includes a field effect device has a dielectric constant less than about 7 and a compressive stress greater than about 5 GPa. The stress liner may be formed of a carbon based material, preferably a tetrahedral amorphous carbon (ta-C) material including at least about 60 atomic percent carbon and no greater than C about 40 atomic percent hydrogen. The carbon based material may be either a dielectric material, or given appropriate additional dielectric isolation structures, a semiconductor material. In particular, a ta-C stress liner may be formed using a filtered cathodic vacuum arc (FCVA) physical vapor deposition (PVD) method. | 12-11-2008 |
20090061237 | LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT - A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CH | 03-05-2009 |
20090061649 | LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT - A porous SiCOH (e.g., p-SiCOH) dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The inventive p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bondings as compared to prior art p-SiCOH dielectric films. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. Hence, the inventive p-SiCOH dielectric film has hydrophobicity improvement as compared with prior art p-SiCOH dielectric films. In the present invention, a p-SiCOH dielectric film is produced that is flexible since the pores of the inventive film include stabilized crosslinking —(CH | 03-05-2009 |
20090203225 | SiCOH FILM PREPARATION USING PRECURSORS WITH BUILT-IN POROGEN FUNCTIONALITY - A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant. | 08-13-2009 |
20090297729 | MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE - The present invention provides a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD. The inventive composite material is also characterized by the substantial absence of the broad distribution of larger sized pores which is prevalent in prior art porous composite materials. The porous composite material includes a first solid phase having a first characteristic dimension and a second solid phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less. | 12-03-2009 |
20120328796 | MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE - A method of forming a porous composite material in which substantially all of the pores within the composite material are small having a diameter of about 5 nm or less and with a narrow PSD is provided. The porous composite material includes a first solid phase having a first characteristic dimension and a second phase comprised of pores having a second characteristic dimension, wherein the characteristic dimensions of at least one of said phases is controlled to a value of about 5 nm or less | 12-27-2012 |
20120329287 | LOW k POROUS SiCOH DIELECTRIC AND INTEGRATION WITH POST FILM FORMATION TREATMENT - A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CH | 12-27-2012 |