Patent application number | Description | Published |
20110067837 | HEAT EXCHANGER - A heat exchanger includes a bundle of tubes, which can be inserted into a tubular housing. Exhaust gas can flow through the tubes. A coolant duct can be arranged between the tubes. The bundle of tubes can have at least one grid-like securing structure which supports the bundle in the housing. The behavior of the heat exchanger with respect to vibrations is affected by outwardly curved metallic springs attached to the bundle of tubes which may be deformed in the opposite direction to the insertion direction of the bundle into the housing. The spring force is directed against the housing in order to dampen vibrations. The heat exchanger can also include an elastic device for permitting a change in length caused by temperature changes. | 03-24-2011 |
20110120671 | HEAT EXCHANGER - A heat exchanger includes a plurality of tubes, a collection tank having an inlet port and an internal chamber in fluid communication with the plurality of tubes, a header coupled to the collection tank and having a plurality of apertures each dimensioned to receive a corresponding tube, a gasket separating the header from the collection tank and sealing a gap between the header and the collection tank, and a reinforcement retaining the gasket in position between the header and the collection tank. The reinforcement includes a first web extending across the internal chamber and a second web spaced apart from the first web and extending across the internal chamber. The heat exchanger also includes a baffle coupled to and extending between the first web and the second web. The baffle extends across at least a portion of the internal chamber between the inlet port and the plurality of tubes. | 05-26-2011 |
20150129167 | Heat Exchanger - A heat exchanger includes a bundle of tubes, which can be inserted into a tubular housing. Exhaust gas can flow through the tubes. A coolant duct can be arranged between the tubes. The bundle of tubes can have at least one grid-like securing structure which supports the bundle in the housing. The behavior of the heat exchanger with respect to vibrations is affected by outwardly curved metallic springs attached to the bundle of tubes which may be deformed in the opposite direction to the insertion direction of the bundle into the housing. The spring force is directed against the housing in order to dampen vibrations. The heat exchanger can also include an elastic device for permitting a change in length caused by temperature changes. | 05-14-2015 |
Patent application number | Description | Published |
20130076339 | Non-Intrusive Electrical Load Monitoring - A method of non-intrusive electrical load monitoring of an electrical distribution system includes monitoring a main power line of the electrical distribution system to determine a set of electrical characteristics of the electrical distribution system, receiving a set of state information for a plurality of individual loads of the electrical distribution system, and determining energy consumption characteristics for the plurality of individual loads based upon the set of electrical characteristics and the set of state information. | 03-28-2013 |
20130257169 | Electrical Load Monitoring Apparatuses - An electrical load monitoring apparatus includes a first inductive coupling device, the first inductive coupling device is configured to receive electrical energy associated with an electrical conductor proximate thereto, and a processor in electrical communication with the first inductive coupling device, wherein the processor is configured to receive the electrical energy from the first inductive coupling device, configured to modulate a carrier wave signal in response to the received electrical energy, and configured to inject the modulated carrier wave signal into the electrical conductor. | 10-03-2013 |
20140354430 | ENERGY HARVESTING, AMBIENT LIGHT FLUCTUATION SENSING INTRUSION DETECTOR - Embodiments are directed to detecting that an intrusion is occurring by detecting, by a first sensor, that the intrusion is occurring based on a variation of light exceeding a threshold, detecting, by a second sensor, that the intrusion is occurring, and generating an intrusion status signal that indicates the intrusion is occurring based on determining that the first and second sensors detect that the intrusion is occurring. | 12-04-2014 |
20150203197 | POWER AND DATA TRANSFER TO HUB SENSORS - Embodiments are directed to a method comprising: providing, by a coil embedded in a structure of a rotor hub composed of a paramagnetic material, power to at least one sensor, and receiving, by the coil, data from the at least one sensor. Embodiments are directed to a system comprising: a coil embedded in a structure of a rotor hub composed of a paramagnetic material, and a plurality of sensors communicatively coupled to the coil and configured to receive power from the coil. | 07-23-2015 |
Patent application number | Description | Published |
20100090283 | Electro Static Discharge Protection Device - A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type. A third heavily doped region is disposed in the second low doped region, the third heavily doped region comprising the second conductivity type and being coupled to a second power supply potential node. | 04-15-2010 |
20110063763 | Electrostatic Discharge Protection Circuit, Integrated Circuit And Method Of Protecting Circuitry From An Electrostatic Discharge Voltage - Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node. | 03-17-2011 |
20120002333 | ESD Clamp Adjustment - Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses. | 01-05-2012 |
20120099229 | Semiconductor ESD Device and Method - An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier. | 04-26-2012 |
20120106010 | METHOD AND SYSTEM FOR ELECTROSTATIC DISCHARGE PROTECTION - A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model. | 05-03-2012 |
20120154961 | ELECTROSTATIC DISCHARGE BLOCKING CIRCUITS - Techniques and architectures corresponding to electrostatic discharge blocking circuits are described. | 06-21-2012 |
20120154962 | ELECTROSTATIC DISCHARGE CLAMPING DEVICES WITH TRACING CIRCUITRY - Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described. | 06-21-2012 |
20120176710 | Semiconductor ESD Circuit and Method - In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node. | 07-12-2012 |
20130077197 | ESD CLAMP ADJUSTMENT - Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses. | 03-28-2013 |
20150229126 | Semiconductor ESD Circuit and Method - In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node. | 08-13-2015 |