Sihombing
Muhammad Sofian Asi Sihombing, Singapore SG
Patent application number | Description | Published |
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20110224129 | Lipopeptide Compounds and Their Use - The present invention pertains generally to the field of therapeutic compounds, and more specifically to certain lipopeptide compounds comprising a cyclic peptide bearing a lipid side chain (for convenience, collectively referred to herein as “LP compounds”), which, inter alia, are antimicrobial, particularly antibacterial. The present invention also pertains to pharmaceutical compositions comprising such compounds, and the use of such compounds and compositions, both in vitro and in vivo, to provide an antimicrobial function, particularly an antibacterial function, and in the treatment of diseases and conditions that are mediated by microbes, particularly bacteria, that are ameliorated by the antimicrobial function, particularly an antibacterial function, including bacterial diseases, optionally in combination with another agent, for example, another antibacterial agent. | 09-15-2011 |
20110237566 | Therapeutic Macrolide Compounds and Their Use - The present invention pertains generally to the field of therapeutic compounds, and more specifically to certain macrolide compounds (for convenience, collectively referred to herein as “MC compounds”), which, inter alia, are useful in treatment of cancer. The present invention also pertains to pharmaceutical compositions comprising such compounds, and the use of such compounds and compositions, both in vitro and in vivo, to treat proliferative conditions such as cancer, and in the treatment of diseases and conditions that are mediated by the regulation (e.g. inhibition) of cell proliferation, optionally in combination with another agent. | 09-29-2011 |
Rudy Octavius Sihombing, Hsinchu City TW
Patent application number | Description | Published |
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20130149822 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided. A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first conductive type. An epitaxy layer having the first conductive type is formed on the semiconductor substrate. First trenches are formed in the epitaxy layer. First insulating liner layers are formed on sidewalls and bottoms of the first trenches. A first dopant having the first conductive type dopes the epitaxy layer from the sidewalls of the first trenches to form first doped regions. A first insulating material is filled into the first trenches. Second trenches are formed in the epitaxy layer. Second insulating liner layers are formed on sidewalls and bottoms of the second trenches. A second dopant having a second conductive type dopes the epitaxy layer from the sidewalls of the second trenches to form second doped regions. | 06-13-2013 |
20140035029 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device including a semiconductor substrate of a first conductivity type and an epitaxial layer of the first conductivity type disposed thereon is disclosed. Pluralities of first and second trenches are alternately arranged in the epitaxial layer. First and second doped regions of the first conductivity type are formed in the epitaxial layer and surrounding each first trench. A third doped region of a second conductivity type is formed in the epitaxial layer and surrounding each second trench. A first dopant in the first doped region has diffusivity larger than that of a second dopant in the second doped region. A method for fabricating a semiconductor device is also disclosed. | 02-06-2014 |
Rudy Octavius Sihombing, Medan ID
Patent application number | Description | Published |
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20140117436 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device is provided. An epitaxial layer is grown on a substrate, wherein the epitaxial layer and the substrate have a first conductivity type. A trench is formed in the epitaxial layer. A barrier region is formed at a bottom of the trench. A doped region of a second conductivity type is formed in the epitaxial layer and surrounds sidewalls of the trench, wherein the barrier region prevents a dopant used for forming the doped region from reaching the epitaxial layer under the barrier region. The trench is filled with a dielectric material. A pair of polysilicon gates is formed on the epitaxial layer and on both sides of the trench. | 05-01-2014 |
20140217501 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - The invention provides a semiconductor device, including: a substrate having a first conductivity type, including: a body region having the first conductivity type; a source region formed in the body region; a drift region having a second conductivity type adjacent to the body region; and a drain region formed in the drift region; a multiple reduced surface field (RESURF) structure embedded in the drift region of the substrate; and a gate dielectric layer formed over the substrate; wherein the first conductivity type is opposite to the second conductivity type. | 08-07-2014 |