Patent application number | Description | Published |
20150126015 | SEMICONDUCTOR PROCESS - A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided. | 05-07-2015 |
20150380312 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is provided. The method includes the following steps. A substrate including a first transistor having a first conductivity type, a second transistor having a second conductivity type and a third transistor having the first conductivity type is formed. An inner-layer dielectric layer is formed on the substrate, and includes a first gate trench corresponding to the first transistor, a second gate trench corresponding to the second transistor and a third gate trench corresponding to the third transistor. A work function metal layer is formed on the inner-layer dielectric layer. An anti-reflective layer is coated on the work function metal layer. The anti-reflective layer on the second transistor and on the top portion of the third gate trench is removed to expose the work function metal layer. The exposed work function metal layer is removed. | 12-31-2015 |
20160005866 | FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A fin field effect transistor (FinFET) with improved electrical performance and a method of manufacturing the same are disclosed. A FinFET comprises a substrate having a top surface and an insulation. At least a recessed fin is extended upwardly from the top surface of the substrate, and at least a gate stack formed above the substrate, wherein the gate stack is extended perpendicularly to an extending direction of the recessed fin, and the recessed fin is outside the gate stack. The insulation comprises a lateral portion adjacent to the recessed fin, and a central portion contiguous to the lateral portion, wherein a top surface of the lateral portion is higher than a top surface of the central portion. A top surface of the recessed fin is lower than the top surface of the central portion of the insulation. | 01-07-2016 |
20160093737 | ETCHING METHOD FOR FORMING GROOVES IN Si-SUBSTRATE AND FIN FIELD-EFFECT TRANSISTOR - An etching method adapted to forming grooves in Si-substrate and FinFET transistor manufactured thereof are provided. The etching method includes providing a silicon substrate, at least two gate structures formed on the silicon substrate and at least two gate spacer structures disposed on the silicon substrate; performing a first etching process on the silicon substrate to form a first groove, which has a base and two inclined sidewalls, ascending to respective bottoms of the gate structures, and are interconnected with the base, respectively; and performing a second etching process on the silicon substrate at the base of the first groove, so as to form a second groove in an inverted | 03-31-2016 |
20160099179 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed. | 04-07-2016 |
20160104627 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; forming a cap layer on the fin-shaped structure; removing part of the cap layer on top of the fin-shaped structure; removing part of the fin-shaped structure; removing the remaining cap layer; and removing part of the remaining fin-shaped structure. | 04-14-2016 |
20160118481 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device comprises a substrate, a gate structure and a gate spacer. The substrate has a semiconductor fin protruding from a surface of the substrate. The gate structure is disposed on the semiconductor fin. The gate spacer is disposed on sidewalls of the gate structure, wherein the gate spacer comprises a first material layer and a second material layer stacked with each other and both of these two material layers are directly in contact with the gate structure. | 04-28-2016 |
20160126334 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the top surface of the fin structure which is not covered by the gate structure is defined as a second top surface. The first top surface is higher than the second top surface, and a spacer covers the sidewalls of the gate structure. The spacer includes an inner spacer and an outer spacer, and the outer pacer further contacts the second top surface of the fin structure directly. | 05-05-2016 |