Patent application number | Description | Published |
20090203218 | PLASMA ETCHING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method includes etching an etching target layer formed on a substrate to be processed by a plasma of a processing gas by using an ArF photoresist as a mask. The etching target layer is a silicon nitride layer or silicon oxide layer, and the processing gas contains at least a CF | 08-13-2009 |
20090203219 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method includes etching a silicon layer formed on a substrate to be processed through a patterned mask layer by using a plasma of a processing gas. The processing gas contains at least a CF | 08-13-2009 |
20100062607 | DRY ETCHING METHOD - In a dry etching method, a silicon substrate is mounted on an electrode arranged in a processing chamber; a plasma is generated by discharging an etching gas in the processing chamber; a radio frequency power for attracting ions from the plasma is supplied to the electrode; and the silicon substrate is etched by the plasma. A pressure inside the processing chamber is set as 1 mTorr to 100 mTorr, and the etching is carried out while satisfying the following equation: yM≧2.84*10 | 03-11-2010 |
20100068888 | DRY ETCHING METHOD - A dry etching method includes: mounting a silicon substrate on an electrode arranged in a processing chamber; generating a plasma by discharging an etching gas in the processing chamber; supplying to the electrode a radio frequency power for attracting ions from the plasma; and etching the silicon substrate by the plasma by using an inorganic mask containing silicon as an etching mask. An absolute value of a self-bias voltage generated in the electrode is equal to or smaller than about 280 V, and wherein the etching is carried out while satisfying the following equation: y≦0.0114x+0.171, where x is a pressure inside the processing chamber and y is a power density of the radio frequency power per unit area of the electrode. | 03-18-2010 |
20100081287 | DRY ETCHING METHOD - A dry etching method includes: mounting a silicon substrate in a processing chamber; generating a plasma by discharging an etching gas in the processing chamber; and etching the silicon substrate by the plasma. The etching gas is a gaseous mixture including a Cl | 04-01-2010 |
20100118464 | ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - In an electrostatic chuck provided inside a processing chamber of a substrate processing apparatus and including a high voltage electrode plate for electrostatically attracting a target substrate, a heater includes a plate-shaped resistor and two electrode plates respectively brought into surface-contact with a front surface and a rear surface of the resistor, and one of the two electrode plates of the heater serves as the high voltage electrode plate for electrostatically attracting the target substrate. | 05-13-2010 |
Patent application number | Description | Published |
20090101284 | Table for plasma processing apparatus and plasma processing apparatus - An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled. | 04-23-2009 |
20090285998 | PLASMA PROCESSING APPARATUS, ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, AND ELECTRODE PLATE MANUFACTURING METHOD - A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated. | 11-19-2009 |
20110162802 | PLASMA PROCESSING APPARATUS, ELECTRODE PLATE FOR PLASMA PROCESSING APPARATUS, AND ELECTRODE PLATE MANUFACTURING METHOD - A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated. | 07-07-2011 |
20110192540 | TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS - An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled. | 08-11-2011 |