Shioda, JP
Atsushi Shioda, Tokyo JP
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20120298603 | VEHICLE BRACKET - A bracket ( | 11-29-2012 |
Chisato Shioda, Kawasaki JP
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20140161269 | APPARATUS AND METHOD FOR ENCODING AUDIO SIGNAL, SYSTEM AND METHOD FOR TRANSMITTING AUDIO SIGNAL, AND APPARATUS FOR DECODING AUDIO SIGNAL - An audio signal encoding apparatus includes a processor to quantize an audio signal, to obtain a characteristic of reverberation masking that is exerted on a sound represented by the audio signal by reverberation of the sound generated in a reproduction environment by reproducing the sound, and to control a quantization step size of the audio signal that quantized based on the characteristic of the reverberation masking. | 06-12-2014 |
20140297281 | SPEECH PROCESSING METHOD, DEVICE AND SYSTEM - A speech processing method executed by a computer, the speech processing method includes: extracting, based on speech recognition for an input speech data, a plurality of word candidates including a first word candidate and a second word candidate from a memory, the plurality of word candidates being candidates for a word corresponding to the input speech data; determining at least one different part between the first word candidate and the second word candidate based on a comparison between the first word candidate and the second word candidate; and outputting the first word candidate with emphasis on the at least one different part. | 10-02-2014 |
20140350937 | VOICE PROCESSING DEVICE AND VOICE PROCESSING METHOD - A voice processing device includes a processor; and a memory which stores a plurality of instructions, which when executed by the processor, causing the processor to execute: acquiring an input voice; detecting a sound period included in the input voice and a silent period adjacent to a back end of the sound period; calculating a number of words included in the sound period; and controlling a length of the silent period according to the number of words. | 11-27-2014 |
20140372121 | SPEECH PROCESSING DEVICE AND METHOD - A speech processing device includes a processor; and a memory which stores a plurality of instructions, which when executed by the processor, cause the processor to execute: obtaining input speech, detecting a vowel segment contained in the input speech, estimating an accent segment contained in the input speech, calculating a first vowel segment length containing the accent segment and a second vowel segment length excluding the accent segment, and controlling at least one of the first vowel segment length and the second vowel segment length. | 12-18-2014 |
20150255087 | VOICE PROCESSING DEVICE, VOICE PROCESSING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM STORING VOICE PROCESSING PROGRAM - A voice processing device includes a backchannel-response detector configured to detect, from a first voice signal including a voice of a first speaker, a backchannel-response segment including a voice corresponding to a backchannel response made by the first speaker, using, a start point of a first voice segment detected from the first voice signal, an end point of a second voice segment detected from a second voice signal including a voice of a second speaker uttered before the voice of the first speaker, and the number of vowels detected from the first voice segment of the first voice signal. | 09-10-2015 |
Eiichiro Shioda, Tokyo JP
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20140136485 | FILE MANAGEMENT SYSTEM AND FILE MANAGEMENT METHOD - [Problem] To provide a file management system and file management method that are able to perform a backup process efficiently by means of a configuration that uses a virtual file system metadatabase from a backup process side also. [Solution] The file management system is provided with a virtual drive controller ( | 05-15-2014 |
Haruko Shioda, Tokyo JP
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20100241738 | DEVICE SETTING MANAGEMENT SYSTEM, DEVICE SETTING MANAGEMENT METHOD AND COMPUTER-READABLE RECORDING MEDIUM FOR DEVICE SETTING MANAGEMENT - Provided are a device setting management system, a device setting management method, and a recording medium for device setting management, which efficiently change the setting of a device. A control unit of a device management system specifies a newly connected device which is not specified in mode setting management data as a target device. The control unit determines the sequential processing order of the specified target device, and sequentially transmits information on a setting change request to the device according to the determined sequential processing order. Upon reception of information on a setting change result including a device identifier of a device whose setting has been changed, the control unit stores a “mode-ON flag” and a “mode-OFF flag” in the mode setting management data including this device identifier to update a setting management flag. | 09-23-2010 |
Hayato Shioda, Chigasaki-Shi JP
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20150313469 | OPHTHALMOLOGIC APPARATUS AND CONTROL METHOD THEREFOR - An ophthalmologic apparatus wherein auto alignment and manual alignment can be selectively used to enhance alignment accuracy between an eye to be inspected and an ophthalmic part includes an ophthalmic part that detects an eye to be inspected, a fixing part, a movable part on which the ophthalmic part is placed and configured to be movable with respect to the fixing unit in a horizontal direction, a drive part that transmits electric drive force for horizontal movement of the movable part, an alignment detection unit that detects a relative position between the eye to be inspected and ophthalmic part, a controller that controls the movable part based on a detection result from the alignment detection unit, and a drive force transmit switching unit that switches whether or not to execute transmission of the drive force from the drive part to the movable part. | 11-05-2015 |
Hiroko Shioda, Chiba JP
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20100220940 | INTERLOCKING DEVICE AND PACKAGING BAG WITH INTERLOCKING DEVICE - A packaging bag has a zipper including a pair of male member and a female member that are engageable with each other. The male member includes: a belt-shaped male base element provided on a packaging bag body; and a male engaging portion projecting from the belt-shaped male base element. The female member includes: a belt-shaped female base element located at a position opposed to the belt-shaped male base element; and a female engaging portion projecting from the belt-shaped female base element, the male engaging portion and the female engaging portion being disengageably engaged to form an engaging portion. The belt-shaped male base element and the belt-shaped female base element are made of a resin of which tensile modulus of elasticity is in a range of 700 MPa to 1600 MPa. The engaging portion is made of a resin of which tensile modulus of elasticity is in a range of 110 MPa to 560 MPa. | 09-02-2010 |
Hiroko Shioda, Sodegaura-Shi JP
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20140112601 | ZIPPER TAPE AND BAG BODY COMPRISING ZIPPER TAPE - A bag body provided with a zipper tape in which both openability by hands and openability by an automatic machine are improved while ensuring the opening strength on the contents side in order to prevent the leakage of the contents is provided. A zipper tape is configured such that the distance A between a front end part of a female part on the non-opening side and a top part on a protruded part on the opening side, the distance B between a front end part of a female part on the non-opening side and a front part opposing to a stripe-shaped base in a protruded part on the non-opening side, and the angle C formed by a protruded part on the non-opening side and a side surface of a shaft part connecting therewith satisfies the relationship represented by the following formula: A−B≦0.20 mm and 50°≦C≦85°. | 04-24-2014 |
Hitoshi Shioda, Kyoto JP
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20080205457 | Image recording apparatus - An image recording apparatus according to this invention includes a frequency divider | 08-28-2008 |
Jumpei Shioda, Susono-Shi JP
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20130272864 | CENTRIFUGAL COMPRESSOR - A compressor includes plural first vanes provided on a shroud side of a diffuser path, and plural second vanes provided on positions of a hub side opposed to the first vanes. The compressor also includes a slide vane mechanism that projects the second vanes into and draws in the second vanes from the diffuser path via the slits of the hub side wall part plate according to a load of the compressor. When the slide vane mechanism projects the second vanes into the diffuser path, end faces of the first vanes and end faces of the second vanes are opposed to each other at the vicinity of the center of the diffuser path. | 10-17-2013 |
20140003930 | CENTRIFUGAL COMPRESSOR | 01-02-2014 |
20140326225 | SUPERCHARGED INTERNAL COMBUSTION ENGINE - A supercharged internal combustion engine of the present invention is provided with a turbocharger ( | 11-06-2014 |
20140366533 | SUPERCHARGER-EQUIPPED INTERNAL COMBUSTION ENGINE - A supercharger-equipped internal combustion engine in the present invention includes a turbo-supercharger ( | 12-18-2014 |
20150136096 | INTERNAL COMBUSTION ENGINE - When a blow-by gas collides with an outer circumferential wall of a tubular member, part of oil mist in the collision gas is liquefied (an oil droplet). The oil droplet takes in the oil mist in the blow-by gas which flows into an intake pipe in succession, and moves on the outer circumferential wall of the tubular member in accordance with a flow of an intake gas and the gravity while keeping a liquefied state. The oil droplet flows in from an inlet section while keeping the liquefied state, and uniformly flows into a surface of an impeller to be discharged to a scroll side. A surface of a diffuser is washed uniformly by the oil droplet keeping the liquefied state, and generation or accumulation of the deposit on the surface can be restrained. | 05-21-2015 |
Kazuaki Shioda, Saitama JP
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20150183556 | ZIPPER TAPE WITH CUT TAPE, AND PACKAGING BAG PROVIDED WITH ZIPPER TAPE WITH CUT TAPE - A zipper tape with a cut tape that makes it possible to reduce the number and area of parts bonded to a bag body, reduce the defectives rate, and unseal a bag in a reliable manner at a predetermined position; and a packaging bag provided with the zipper tape with a cut tape. | 07-02-2015 |
Kazunori Shioda, Minato-Ku JP
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20140217240 | VORTEX GENERATING APPARATUS AND VORTEX GENERATING METHOD - A vortex generating apparatus includes: a member to contact with a flow of a fluid to form a stagnation point and a first and a second separation points on a periphery of a cross section of the member parallel to the flow; a disturbance applying unit to apply a disturbance to an upstream side of the first separation point to cause part of a boundary layer of the flow to adhere; and a controller to temporally control the application of the disturbance to change an adhesion distance from the stagnation point to the first separation point so as to generate a dynamic stall vortex. | 08-07-2014 |
Kazunori Shioda, Kanagawa-Ken JP
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20100045824 | Video image pickup apparatus and exposure guide display method - A video image pickup apparatus ( | 02-25-2010 |
Kazuya Shioda, Chiba JP
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20090003823 | SHUTTER AND OPTICAL APPARATUS HAVING THE SAME APPARATUS - A shutter for an optical apparatus has multiple sectors and an operation member. Each of the multiple sectors has a cam opening for engagement and is pivotally provided to open and close a shutter opening, the operation member moves each of said multiple sectors in engagement with the cam opening, and the cam opening of at least one sector that is one of the multiple sectors is formed to change a moving direction of said at least one sector, when the operation member moves said at least one sector to a position to close the shutter opening. | 01-01-2009 |
20130084060 | FOCAL PLANE SHUTTER AND OPTICAL DEVICE - A focal plane shutter includes: first, second, and third boards respectively including openings through which light enters an image pickup element from an object side, and arranged in this order from the object side toward the image pickup element side; a blade arranged between the first and second boards and capable of opening and closing the openings; and a holding member arranged between the second and third boards, not coupled to the blade, and holding the second board from the image pickup element side. | 04-04-2013 |
Kazuya Shioda, Narashino-Shi JP
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20140300943 | APERTURE DEVICE AND OPTICAL INSTRUMENT - An aperture device includes: a board including an opening; a blade opening and closing the opening; and first and second receiving plates sandwiching the blade; wherein the first receiving plate includes a pressing portion partially pressing the blade toward the second plate. | 10-09-2014 |
Keiji Shioda, Tokyo JP
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20110040406 | METHOD AND APPARATUS FOR REMOVABLY HOLDING MEDICAL DEVICE - An apparatus for holding a medical device has an arm unit equipped with, for example, a polyarticular arm, which holds the medical device such as endoscope movably in the space. Additionally to a determination unit and a controller, the holding apparatus has an operation unit equipped with a plurality of operation members with which an operator's operation causes the arm unit to be moved spatially. The determination unit determines whether or not operator's operations at the plurality of operation members corresponds to an improper state deviating from a properly operated state in which at least two predetermined operation members have been operated within a predetermined period of time which is set to measure simultaneity for operations. If it is determined that the operation is in the improper state, the controller prohibits the arm unit from moving. As long as the operation is proper, the arm unit can be moved. | 02-17-2011 |
Keiji Shioda, Hachioji-Shi JP
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20150085081 | MEDICAL THREE-DIMENSIONAL OBSERVATION APPARATUS - A medical three-dimensional observation apparatus includes at least a pair of imaging units, a three-dimensional image processing unit, a calculating unit, and an index superimposing unit. The imaging units image a .specimen from different viewpoints. The three-dimensional image processing unit displays a three-dimensional image of the specimen on a display in accordance with images of the specimen. The calculating unit calculates a region of a three-dimensional reproduction space of the display in which the three-dimensional image of the specimen is to be reproduced. The index superimposing unit superimposes an annotation image on a depth position corresponding to the region in which the three-dimensional image is reproduced. | 03-26-2015 |
Kenichiro Shioda, Minato-Ku JP
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20120202595 | CHARACTER CONTROL DEVICE, CHARACTER CONTROL METHOD, RECORDING MEDIUM AND PROGRAM - A formation information storage unit stores formation information regulating a formation which characters should form. A character control unit turns off assessment of contact between allies when the characters are to formate and, based on formation information, assembles the respective characters in respective positions. Then, after the characters are assembled, the character control unit turns contact assessment back on. Further, when the characters are to attack, the character control unit moves front row characters toward enemy characters and makes back row characters follow the front row characters, while maintaining a certain amount of space therebetween. Then, when a front row character is destroyed, a back row character replaces the destroyed character. | 08-09-2012 |
20120220366 | GAME SYSTEM - Disclosed is a game system which is capable of matching the replay range with the replay fee, even when the replay range is set to a portion of the played range. A game system allows a user to play the game in the predetermined range when an initial fee is collected from the user, and sets the play fee necessary for playing the game in the replay range according to the setting of the replay range. After the game is over in the predetermined range, the replay process is performed for allowing the user to play the game in the replay range, on the condition that the set play fee is collected from the user. | 08-30-2012 |
Kenichiro Shioda, Tokyo JP
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20090069086 | CHARACTER CONTROL DEVICE, CHARACTER CONTROL METHOD, RECORDING MEDIUM, AND PROGRAM - A formation information storage unit ( | 03-12-2009 |
Kota Shioda, Himeji-Shi JP
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20140001107 | FOREIGN-OBJECT OFFSHORE PROCESSING SYSTEM | 01-02-2014 |
Masahiko Shioda, Shinagawa-Ku JP
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20100296964 | ALUMINUM ALLOY FOR CASTING HAVING HIGH RIGIDITY AND LOW LINEAR EXPANSION COEFFICIENT - [Objectives] An aluminum alloy for casting with excellent rigidity and having a low coefficient of linear expansion, and at the same time, does not have a high cost, and has a few restrictions at the time of recycling. | 11-25-2010 |
20120168041 | ALUMINUM ALLOY CASTING MATERIAL FOR HEAT TREATMENT EXCELLING IN HEAT CONDUCTION AND PROCESS FOR PRODUCING THE SAME - An aluminum alloy casting material for heat conducting is provided, wherein the thermal conductivity is improved of an aluminum alloy casting material whereof the castability is improved by the addition of silicon where said invention is characterized by being an aluminum alloy casting material with excellent thermal conductivity, comprising 5-10.0% by mass of silicon, 0.1-0.5% by mass of magnesium and the remainder comprising aluminum and inevitable impurities, and whereon aging treatment has been performed. | 07-05-2012 |
Masahiko Shioda, Tokyo JP
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20100108209 | ALUMINUM ALLOY MATERIAL FOR USE IN THERMAL CONDUCTION APPLICATION - An aluminum alloy material for use in thermal conduction to which improved castability has been imparted by silicon addition. It has improved thermal conductivity and improved strength. The material has a composition containing 7.5-12.5 mass % Si and 0.1-2.0 mass % Cu, the remainder being Al and unavoidable impurities, wherein the amount of copper in the state of a solid solution in the matrix phase is regulated to 0.3 mass % or smaller. The composition may further contain at least 0.3 mass % Fe and/or at least 0.1 mass % Mg, provided that the sum of (Fe content) and (content of Mg among the impurities)×2 is 1.0 mass % or smaller and the sum of (Cu content), (content of Mg among the impurities)×2.5, and (content of Zn among the impurities) is 2.0 mass % or smaller. | 05-06-2010 |
20110132504 | Aluminum Alloy Casting Material for Heat Treatment Excelling in Heat Conduction and Process for Producing the Same - An aluminum alloy casting material for heat conduction obtained by adding Si to an aluminum alloy casting material with enhanced castability thereby realize enhancement of thermal conductivity. There is provided an aluminum alloy casting material excelling in heat conduction. characterized in that it comprises 5 to 10.0 mass % of Si, 0.1 to 0.5 mass % of Mg and the balance of Al and unavoidable impurities, the aluminum alloy casting material having undergone an aging treatment. Further, there is provided a cast aluminum alloy casting material that while having castability and mechanical strength equivalent to or higher than those of conventional cast aluminum alloys, is also enhanced in heat conduction; and provided a process for producing the cast aluminum alloy. In particular, there are provided a cast aluminum alloy and process for producing the same, wherein Si is contained in an amount of 6.0 to 8.0 mass %, the elements other than Si and Al each in simple form in an amount of ≦0.6%, and wherein the amount of Si solid-dissolved in aluminum parent phase is regulated to 0.5-1.1 mass % while the area ratio of crystallizate in metal structure is regulated to 5-8%. In this connection, the amount of Si solid-dissolved and the area ratio of crystallizate can be attained by performing of heating retaining treatment of the subject matter of cast aluminum alloy after casting operation at 400° to 510°C. for ≧1 hr. | 06-09-2011 |
20140048186 | ALUMINUM ALLOY MATERIAL FOR USE IN THERMAL CONDUCTION APPLICATION - An aluminum alloy material for use in thermal conduction to which improved castability has been imparted by silicon addition. It has improved thermal conductivity and improved strength. The material has a composition containing 7.5-12.5 mass % Si and 0.1-2.0 mass % Cu, the remainder being Al and unavoidable impurities, wherein the amount of copper in the state of a solid solution in the matrix phase is regulated to 0.3 mass % or smaller. The composition may further contain at least 0.3 mass % Fe and/or at least 0.1 mass % Mg, provided that the sum of (Fe content) and (content of Mg among the impurities)×2 is 1.0 mass % or smaller and the sum of (Cu content), (content of Mg among the impurities)×2.5, and (content of Zn among the impurities) is 2.0 mass % or smaller. | 02-20-2014 |
Masahiko Shioda, Yokohama-Shi JP
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20090010799 | CASTING ALUMINUM ALLOY AND INTERNAL COMBUSTION ENGINE CYLINDER HEAD - Disclosed are: a casting aluminum alloy that is excellent in elongation as alternative properties of a high cycle fatigue strength and a thermal fatigue strength and is suitably usable for a casting for which both of the excellent high cycle fatigue strength and the excellent thermal fatigue strength are required, for example, an internal combustion engine cylinder head; a casting made of the aluminum alloy; a manufacturing method of the casting; and further, an internal combustion engine cylinder head composed of the aluminum alloy casting and manufactured by the manufacturing method of the casting. The casting aluminum alloy contains, in terms of mass ratios, 4.0 to 7.0% of Si, 0.5 to 2.0% of Cu, 0.25 to 0.5% of Mg, no more than 0.5% of Fe, no more than 0.5% of Mn, and at least one component selected from the group consisting of Na, Ca and Sr, each mass ratio of which is 0.002 to 0.02%. | 01-08-2009 |
20140182750 | METHOD FOR PRODUCING AN ALUMINUM ALLOY CASTING - A method for manufacturing an aluminum alloy casting includes obtaining the aluminum alloy casting by casting an aluminum alloy into a mold, performing solution heat treatment, rapidly cooling the casting, performing aging treatment, and cooling the casting. The aluminum alloy includes, in terms of mass ratios, 4.0 to 7.0% of Si, 0.5 to 2.0% of Cu, 0.25 to 0.5% of Mg, no more than 0.5% of Fe, and no more than 0.5% of Mn, and at least one component selected from the group consisting of 0.002 to 0.02% of Na, 0.002 to 0.02% of Ca and 0.002 to 0.02% of Sr, a remainder being Al and inevitable impurities. An internal combustion engine cylinder head is composed of the aluminum alloy casting and manufactured by the method of the casting. The aluminum alloy casting is suitable for applications requiring superior elongation, high cycle fatigue strength and high thermal fatigue strength. | 07-03-2014 |
Masahiro Shioda, Kawasaki JP
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20100226648 | FRAME GENERATING APPARATUS AND FRAME GENERATING METHOD - A frame generating apparatus accommodating a client signal in an optical data transfer unit frame with a higher bit rate than the client signal includes a deserializer, a plurality of generic mapping procedure circuits, and a serializer. The deserializer deserializes the client signal into parallel signals, the number of parallel signals corresponding to the number of tributary slots used in the optical data transfer unit frame. The plurality of generic mapping procedure circuits inserts data and stuff into a frame accommodating portion of the optical data transfer unit frame based on a difference in the bit rate between the client signal and the optical data transfer unit frame. The serializer serializes the parallel signals output from the plurality of generic mapping procedure circuits. | 09-09-2010 |
20100322630 | OPTICAL TRANSMISSION APPARATUS AND METHOD - An optical transmission apparatus including a transmitting OTL processor to rearrange a data string stored in a frame into a plurality of logical lanes, and set a lane ID used to identify in which logical lane a beginning of the data string is arranged among the plurality of logical lanes in a non-scramble area in an overhead of the frame, and a receiving OTL processor to respectively identify the lane IDs included in the data string in the respective physical lanes rearranged, determine a generation state of a bit inversion and a lane replacement for each physical lane, compensate the bit inversion and the lane replacement so that the data string in the respective physical lanes becomes same state as the data string in the respective logical lanes, based on the identified result, and rearrange the compensated data string in the respective logical lanes so as to regenerate the frame. | 12-23-2010 |
20110200339 | OPTICAL RECEIVER - An optical receiver includes: a waveform distortion compensator to perform an operation on digital signal representing an optical signal generated by an A/D converter to compensate for waveform distortion of the optical signal; a phase detector to generate phase information representing sampling phase of the A/D converter; a phase adjuster to generate digital signal representing an optical signal in which the sampling phase of the A/D converter is adjusted from an output signal of the waveform distortion compensator using the phase information; a demodulator to generate a demodulated signal from the output signal of the phase adjuster; a phase controller to control the sampling phase of the A/D converter; a peak detector to detect a peak value of the phase information while the sampling phase of the A/D converter is controlled by the phase controller; and a compensation controller to control the waveform distortion compensator using the peak value. | 08-18-2011 |
20120219282 | OPTICAL TRANSMISSION SYSTEM AND OPTICAL TRANSMISSION METHOD - An optical transmission system transmits an optical signal of multi-level modulation. In a transmitter module, a data string in a specified frame is rearranged into a plurality of logical lanes. A lane ID, which specifies in what logical lane out of the plurality of logical lanes a start of the data string is arranged, is assigned to a non-scrambled area in an overhead portion of the frame. The lane ID corresponding to one of the plurality of logical lanes is different from the lane IDs corresponding to the other remaining logical lanes. The optical signal is generated using the data string rearranged into the plurality of logical lanes. In a receiver, the lane ID is detected according to a majority method. The inversion of bits and the swapping of lanes are detected using the lane ID and compensated. | 08-30-2012 |
20120230350 | SIGNAL DEMULTIPLEXER, SIGNAL MULTIPLEXER, AND SIGNAL MULTIPLEXER/DEMULTIPLEXER - A signal demultiplexer includes a conversion unit that converts a format of a high speed signal transfer frame output from a terminating unit into a format of a converted frame; a parallelization unit that parallelizes the converted frame and outputs a predetermined number of data columns; and a separating unit that separates plural low speed signal transfer frames from the predetermined number of the data columns. The conversion unit converts the format of the high speed signal transfer frame into the format of the converted frame by delaying a signal storing area using first and second overhead areas, to include an “i” th tributary slot among the predetermined number of the tributary slots assigned to the signal storing area into an arbitrary “i” th data column among the predetermined number of the data columns, and to align front positions of the predetermined number of the data columns. | 09-13-2012 |
20120263452 | METHOD OF SWITCHING OPTICAL TRANSPORT NETWORK AND NODE DEVICE - A node device in an optical transport ring network including plural node devices connected in a ring form using plural optical transmission paths so that optical transport frames of a working line and a protection line are transmitted using the plural optical transmission paths, includes a control information transmitter, when a failure occurs in the optical transmission paths, transmitting the optical transport frame to an opposing node device as a transmission destination node in the optical transmission paths, the optical transport frame including switching control information; and a switcher receiving the optical transport frame including switching control information, the optical transport frame being transmitted to the node device as the transmission destination node, forming a loop back to fold a transmission path between the plural optical transmission paths, and switching the optical transmission path from the work line to the protection line. | 10-18-2012 |
20120281985 | TRANSMITTING APPARATUS AND SIGNAL TRANSMITTING METHOD - A transmitting apparatus includes a frame dividing circuit that maps frame data of each of a plurality of frames whose period is different from each other into one or a plurality of internal frames having a fixed frame period and a fixed transmission rate, based on a predetermined internal clock; a cross-connect circuit that cross-connects the frame data of each in a time division multiplexing system based on the internal clock in units of the internal frames; and a frame combining circuit that demaps, into any of the plurality of frames, or multiplexes, data of one or a plurality of internal frames cross-connected by the cross-connect circuit. | 11-08-2012 |
20130004168 | CLIENT SIGNAL ACCOMMODATING MULTIPLEXING APPARATUS AND METHOD - In an apparatus for accommodating and multiplexing asynchronous client signals in which an idle signal is defined, the transmission side transmits client signals after synchronizing the client signals by inserting or removing, with reference to a specific client signal, an idle signal to/from the same type of another client signal, and in the receiving side, a PLL part is shared by recovering a clock from a client signal and distributing the clock for another client signal. | 01-03-2013 |
20130058643 | DATA AMOUNT DERIVATION APPARATUS - A data amount derivation apparatus includes: a first calculator configured to derive, for one series of parallelized mapping signals, amount of data in each frame period for a frame into which the parallelized mapping signals are mapped; and a second calculator configured to sum up amounts of data in N frame periods, where N is an integer, and to derive the resulting summation value as the amount of data to be mapped into the frame, each of the amounts of data in each of the frame periods being derived by the first calculator. | 03-07-2013 |
Michinori Shioda, Yokohama-Shi JP
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20080243410 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - Provided are an image forming apparatus and an image forming method which are capable of obtaining an image of a measured object using a relatively simple structure in a short time. In the image forming apparatus, an electromagnetic wave generated by an electromagnetic wave generator is emitted to the measured object through a spatial modulation unit for spatially modulating a signal intensity. An electromagnetic wave that has passed through the measured object is measured by an electromagnetic wave detecting unit. A measurement signal is processed by a signal processing section based on a reference signal synchronized with the signal intensity modulated by the spatial modulation unit. The image is formed by an image acquisition section. | 10-02-2008 |
20100148071 | INSPECTION APPARATUS AND INSPECTION METHOD - An inspection apparatus for inspecting a subject (sample) (for example, performing identification or imaging of the subject) using an expansion coefficient with a relatively small amount of data. The inspection apparatus includes a transforming unit that performs a wavelet transform on a terahertz time waveform obtained using a terahertz wave detected by a detecting unit. In addition, the inspection apparatus includes a selecting unit that selects, from a first expansion coefficient in the wavelet transform, a second expansion coefficient stored in advance and included in the first expansion coefficient. Furthermore, the inspection apparatus includes a comparing unit for comparing a first value of the second expansion coefficient with a second value of the second expansion coefficient selected by the selecting unit. | 06-17-2010 |
20110168896 | METHOD AND DEVICE FOR MEASURING ELECTROMAGNETIC WAVE - A waveform acquiring unit acquires a time waveform of an electromagnetic wave. The time waveform is decomposed into wavelet expansion coefficients by wavelet transform. Influence levels of the respective wavelet expansion coefficients to a spectrum are calculated. The wavelet expansion coefficients are weighted based on at least the influence levels of the wavelet expansion coefficients to the spectrum. The weighted wavelet expansion coefficients are converted into time waveforms by inverse wavelet transform. Thus, the time waveforms that holds spectrum information needed for spectroscopic analysis and has a reduced noise is provided. | 07-14-2011 |
20120280128 | APPARATUS AND METHOD FOR MEASURING ELECTROMAGNETIC WAVE - The present invention provides an apparatus and a method for transforming a time waveform of an electromagnetic wave into a time waveform suited for signal processing and the like so as to measure the time waveform. | 11-08-2012 |
20130313435 | METHOD AND DEVICE FOR MEASURING ELECTROMAGNETIC WAVE - A waveform acquiring unit acquires a time waveform of an electromagnetic wave. The time waveform is decomposed into wavelet expansion coefficients by wavelet transform. Influence levels of the respective wavelet expansion coefficients to a spectrum are calculated. The wavelet expansion coefficients are weighted based on at least the influence levels of the wavelet expansion coefficients to the spectrum. The weighted wavelet expansion coefficients are converted into time waveforms by inverse wavelet transform. Thus, the time waveforms that holds spectrum information needed for spectroscopic analysis and has a reduced noise is provided. | 11-28-2013 |
Naoki Shioda, Kiryu-Shi JP
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20090315426 | DIRECT-CURRENT MOTOR ARMATURE, DIRECT-CURRENT MOTOR, AND METHOD FOR WINDING COIL AROUND ARMATURE OF DIRECT-CURRENT MOTOR - In a direct-current motor armature | 12-24-2009 |
20100052440 | DIRECT CURRENT MOTOR - A direct current motor with brushes in which an armature is provided with a rotating shaft that is supported by a yoke housing, an armature core that is fitted and fixed to a rotating shaft from the outer side, and a commutator that is provided on the rotating shaft adjacent to the armature core with nine segments arranged in the circumferential direction. The armature core has nine teeth that extend in the radial direction in a radial pattern and nine slots that are formed between the teeth and extend in the axial direction, the segments having the same polarity are connected with short-circuiting members, and a pair of brushes that make sliding contact with the segments is disposed so as to be mutually point symmetric centered on the rotating shaft. According to the preset invention, it is possible to effectively achieve flattening of the direct current motor. | 03-04-2010 |
20100308681 | ELECTRIC MOTOR - The windings ( | 12-09-2010 |
20120043840 | ELECTRIC MOTOR AND MOTOR WITH A REDUCTION GEAR - In an electric motor, permanent magnets are disposed on flat sections of a peripheral wall of the yoke, which is formed to be polygonal seen in plan view in the axial direction, a first bearing section which rotatably supports one end of the rotary shaft is integrally formed on a bottom part of the yoke, and a brush holder accommodating section capable of accommodating a brush holder unit that holds the brushes is integrally formed at an opening of the yoke. | 02-23-2012 |
20140113139 | Inorganic-Compound Particles and Process for Producing Same - A method of producing inorganic compound particles is provided. It includes a step of impregnating a melt liquid of second raw particles into first raw particles by heating a raw material including them at a temperature, which equals to or higher than an eutectic temperature between a region-II (solid-liquid phase range) and a region-I (solid phase range) in a phase diagram and lower than the melting temperature of the inorganic compound. The first raw particles contain an element with a melting point equals to or higher than a melting point of the inorganic compound. The second raw particles contain an element with a melting point lower than the inciting point of the inorganic compound. The method also includes a step of synthesizing inorganic compound particles by a synthetic reaction in the first raw particles between the elements contained in the first and second raw particles. | 04-24-2014 |
Satoshi Shioda, Tokyo-To JP
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20120308786 | INK COMPOSITION - Disclosed is an ink composition which has superior storage stability, is resistant to bleeding, has good fixability to paper, and enables printing of a clear image. The ink composition includes a pigment dispersion containing a surface-treated pigment and a resin emulsion, wherein the surface-treated pigment is obtained by binding a functional group, having a larger calcium index than a calcium index of 1,2,3-benzenetricarboxylic acid, to the surface of a pigment; and the resin emulsion is adapted so that an aqueous solution containing 1 mass % of a solid content of the resin emulsion has a conductance of 300 μS/cm or less. | 12-06-2012 |
Satoshi Shioda, Kanagawa JP
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20140055520 | INKJET RECORDING METHOD - An inkjet recording method which suppresses feathering and color bleeding and is excellent in fixability to a recording medium. The inkjet recording method includes the steps of applying an ink-receiving solution prepared by dissolving in an aqueous solvent at least one metal salt having a water solubility of 0.1 mol/l or more, selected from calcium salts, magnesium salts, nickel salts and zinc salts having a valence of 2 or more, to at least the surface to be printed by using an inkjet ink or the entire surface of a recording medium; and printing on the metal salt adhered part by using the inkjet ink comprising at least a pigment, a resin emulsion and an aqueous solvent containing a surfactant. Further, a phosphorus-containing group having at least one P—O or P═O bond is bound to the surface of the pigment. | 02-27-2014 |
20150116234 | RESIN COMPOSITION, AND TRANSPARENT MEMBRANE FOR TOUCH PANEL SENSORS AND TOUCH PANEL USING SAME - The present invention has a main purpose of providing a resin composition capable of forming a resin film excellent in hardness and heat resistance. To achieve the purpose described above, the present invention provides a resin composition, comprising: a developable polysiloxane containing a developable group and substantially no radically polymerizable group; a polymerizable polysiloxane containing a radically polymerizable group and substantially no developable group; and a polyfunctional monomer. | 04-30-2015 |
Seiji Shioda, Komae-Shi JP
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20080300182 | Eye disease treating agent and method for treating eye disease - An eye disease treating agent and a method for treating an eye disease, which use a compound having an interleukin 6 production accelerating activity, are provided. | 12-04-2008 |
Shinobu Shioda, Ora-Gun JP
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20090051450 | CLOCK GENERATION CIRCUIT AND CLOCK GENERATION CONTROL CIRCUIT - According to a preferred embodiment, a clock signal generation circuit includes an oscillating circuit configured to output a clock signal having a clock frequency corresponding to a control signal, a counter configured to generate a count value by counting a pulse number of the clock signal outputted from the oscillating circuit during a predetermined time period, a subtracting circuit configured to produce differential data by subtracting the count value from a preset value previously set based on a predetermined clock frequency, a control signal correcting circuit configured to generate a correcting control signal by correcting a value of the control signal based on the differential data, and a digital-analog converter circuit configured to convert the correcting control signal into an analog correcting control signal and output the converted analog correcting control signal to the oscillating circuit. This clock signal generation circuit can prevent increasing of the circuit size or the system size due to a resistor, a capacitor element, etc., used in a PLL (Phase Locked Loop) without using a central processing unit. | 02-26-2009 |
Shinobu Shioda, Gunma-Ken JP
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20130207583 | VOLTAGE OUTPUT CIRCUIT, LOAD DRIVE CIRCUIT, AND METHOD FOR OUTPUTTING VOLTAGE - A voltage output circuit includes: an oscillator circuit configured to output an oscillation signal while changing an oscillation frequency thereof; and a voltage generating circuit configured to convert a first voltage into a second voltage higher than the first voltage, and output the second voltage, based on the oscillation signal. | 08-15-2013 |
Takanori Shioda, Tokyo JP
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20080219653 | Vibration reduction unit, lens barrel and camera - To provide a compact vibration reduction unit, a lens barrel, and a camera, which can perform positional detection with a high degree of accuracy during operations for vibration reduction. A vibration reduction unit of the present invention is comprising: a shooting optical system; a movable optical member that is part of the shooting optical system or which is another member, and which is provided movably relative to the shooting optical system; a magnetic sensor used to detect a position of the movable optical member; and a coil having a winding center line of a winding wire situated substantially in parallel with and on substantially the same plane as a given plane in which the magnetic sensor is disposed. | 09-11-2008 |
20110267710 | LENS BARREL AND OPTICAL DEVICE - A lens barrel comprises barrier blades that open and close in a directional orthogonal to an optical axis; an optical system retention frame that includes a first surface along a direction orthogonal to the axis, the optical system retention frame retaining the optical system and movable with respect to the barrier blades in a direction along the axis; and a coupling plate includes a second surface relatively movable with respect to the first surface, the coupling plate causing the barrier blades to open and close by the coupling plate rotating about the axis; wherein, when the barrier blades are opened, the first surface is can move in the axis direction without abutting against the second surface and, when the barrier blades are closed, the first surface abuts against the second surface and movement of the first surface in the axis direction is restricted. | 11-03-2011 |
Takanori Shioda, Chofu-Shi JP
Takayuki Shioda, Takarazuka-Shi JP
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20150203511 | TETRAZOLINONE COMPOUNDS AND THEIR USE AS PESTICIDES - The present invention provides a compound having an excellent efficacy for controlling pests. A tetrazolinone compound of a formula (1) [wherein Q represents a group selected from the following group: Q1, Q2, Q3 or Q4: R | 07-23-2015 |
20150223460 | TETRAZOLINONE COMPOUNDS AND THEIR USE AS PESTICIDES - The present invention provides a compound having an excellent efficacy for controlling pests. A tetrazolinone compound of a formula (1): [wherein Q represents a group selected from the following group: Q1, Q2, Q3 or Q4: R | 08-13-2015 |
Takehiko Shioda, Kawasaki JP
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20110213551 | ON-BOARD DEVICE, ROUTE GUIDANCE SYSTEM, METHOD FOR CONTROLLING COMMUNICATION OF ON-BOARD DEVICE, AND COMPUTER PROGRAM THEREFOR - An on-board device | 09-01-2011 |
20110237184 | ON-BOARD DEVICE, INFORMATION COMMUNICATION SYSTEM, METHOD FOR CONTROLLING COMMUNICATION OF ON-BOARD DEVICE, AND COMPUTER PROGRAM THEREFOR - An on-board device | 09-29-2011 |
Takehiko Shioda, Kawasaki-Shi JP
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20120088523 | NOTIFICATION DEVICE, NOTIFICATION SYSTEM, METHOD FOR CONTROLLING NOTIFICATION DEVICE, AND COMPUTER READABLE RECORDING MEDIUM HAVING A CONTROL PROGRAM RECORDED THEREUPON - A mobile phone ( | 04-12-2012 |
Takehiko Shioda, Saitama JP
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20080319640 | Route Guidance System and Method - A routing guide system includes route calculating means for calculating the route of a vehicle to a destination, image providing means for reading from storage means scenery images on the route calculated by the route calculating means, and display means for displaying the scenery images on the calculated route generated by the image providing means. The routing guide system also includes route confirming means for confirming as a set route the route calculated by the route calculating means, according to an operation, during or after display of the scenery images on the calculated route by means of the display means. | 12-25-2008 |
20090293706 | Music Composition Reproducing Device and Music Compositoin Reproducing Method - First, an extracting unit extracts chord progression of a tune to be reproduced. Then, a timing detector detects the timing of variation of the chord progression extracted by the extracting unit. Subsequently, an add-tone reproducing unit combines an add-tone with the tune to be reproduced according to the timing detected by the timing detector. The add-tone reproducing unit can also move a sound image to reproduce the tune or reproduce the tune as an arpeggio. | 12-03-2009 |
Takehiko Shioda, Kawagawa JP
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20110183627 | COMMUNICATION DEVICE, INFORMATION PRESENTATION DEVICE, COMMUNICATION METHOD, PROGRAM, AND RECORDING MEDIUM - It is possible to present identification information of a sender in such a manner that the identification information is easily understood by a user. Included are: a wireless communication section ( | 07-28-2011 |
Takehiko Shioda, Kanagawa JP
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20110205153 | DATA TRANSMISSION DEVICE, DATA TRANSMISSION METHOD, DATA COMMUNICATION SYSTEM, PROGRAM, AND RECORDING MEDIUM - A mobile phone ( | 08-25-2011 |
20110258267 | VEHICLE-MOUNTED DEVICE, INFORMATION COMMUNICATION SYSTEM, METHOD FOR CONTROLLING VEHICLE-MOUNTED DEVICE AND PROGRAM THEREFOR - A vehicle-mounted device or the like is provided by which a content of an electronic mail can be notified by a driver without disturbing safety driving. A vehicle-mounted device | 10-20-2011 |
20110270935 | COMMUNICATION DEVICE, INFORMATION COMMUNICATION SYSTEM, METHOD FOR CONTROLLING COMMUNICATION OF COMMUNICATION DEVICE AND PROGRAM THEREFOR - A communication (on-board) device | 11-03-2011 |
20130205916 | MEASUREMENT APPARATUS AND METHOD - A measurement module that measures force being applied to a man-powered machine includes: a strain sensor that detects strain of a crank of the bicycle configured to transmit force being applied from a user through the crank and one front gear selected among one or more front gears; an MM magnetic sensor that detects the crank passing through a predetermined position; and an MM control part. The MM control part calculates a rotation angle of the crank based on an elapsed time from a time the crank passes through the predetermined position that the sensor has detected, calculates force applied to the crank based on a strain amount of the crank that the strain sensor has detected, associates the rotation angle with the force applied to the crank to calculate distribution of the force applied from the user. | 08-15-2013 |
20130210583 | PEDALING-GOAL SETTING APPARATUS, PEDALING-GOAL SETTING METHOD, PEDALING-GOAL SETTING PROGRAM, AND RECORDING MEDIUM HAVING PEDALING-GOAL SETTING PROGRAM STORED THEREON - There are provided a pedaling-goal setting apparatus, a pedaling-goal setting method, a pedaling-goal setting program and a recording medium having the pedaling-goal setting program storing thereon. The pedal-goal setting apparatus includes a riding posture detection sensor | 08-15-2013 |
20140283622 | POWER METER, POWER MEASUREMENT METHOD, PROGRAM AND STORAGE MEDIUM - There are provided a versatile power meter, a power measurement method, a program and a recording medium. The power meter includes a first measurement unit | 09-25-2014 |
Tatsutoshi Shioda, Nagaoka-Shi JP
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20120206730 | INTERFEROMETER - The light from the light source of the wideband light is reflected by VIPA so that reflection distance varies step by step. In VIPA, the light that phase changed is generated depending on the depth of the step. A interference profile is measured by this reflected light and optical path length modulator by synthetic light with the generated optical frequency comb. The interferometer does not have a movable scanning mechanism, and the operation of the Fourier transform is unnecessary. Thus, it has the measurement of the short time. The measurement of the coaxial tomography and the one-dimensional coaxial tomography of the depth direction is possible. The measurement of the two-dimensional coaxial tomography of the depth direction is possible. | 08-16-2012 |
20120232818 | RELATIVE PHASE DETECTOR, RELATIVE PHASE DETECTING METHOD AND INFORMATION READING DEVICE - It detects the relative phase of two measured signals using two reference signals. The relative phase detector | 09-13-2012 |
20130342849 | SHAPE MEASUREMENT DEVICE AND SHAPE MEASUREMENT METHOD - The shape measurement device | 12-26-2013 |
Tatsuya Shioda, Tokyo JP
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20090011623 | Low profile board-mounted connector - An electrical connector mountable to a circuit board is disclosed. The disclosed connector includes a shell which comprises a first plate-like portion, a second plate-like portion and connection portions. The first plate-like portion extends in a predetermined direction and is provided with fixed portions at opposite ends thereof in the predetermined direction. The fixed portion is to be fixed to the circuit board. The second plate-like portion extends in the predetermined direction. Each of the connection portions connects the first and the second plate-like portion. The second plate-like portion is provided with force resist portions at opposite ends thereof in the predetermined direction. The force resist portions are configured so that, when a force is applied to the electrical connector along a direction from the first plate-like portion towards the second plate-like portion, the force resist portions resist the force. | 01-08-2009 |
Tetsuya Shioda, Kawasaki JP
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20100250866 | INFORMATION PROCESSING PROGRAM, INFORMATION PROCESSING DEVICE AND INFORMATION PROCESSING METHOD - An apparatus includes: a memory; a management memory for storing first virtual addresses used by the first program, second virtual addresses used by the second program and management information indicative of association between first and second virtual addresses and physical addresses of the memory; and a processor for executing the first, the second and a management programs, the management program including: receiving a request to assign a shared area to be shared by the first and second programs from the second program; determining a physical address of the shared area corresponding to one of the first and one of the second virtual addresses; transmitting a notification of data writing by the first program to the second program; locking the shared area so as to prevent the second program from writing data after the notification; and unlocking the shared area after the second program has read data from the shared area. | 09-30-2010 |
Tetsuya Shioda, Kawasaki-Shi JP
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20130205302 | INFORMATION PROCESSING TERMINAL AND RESOURCE RELEASE METHOD - In an information processing terminal, a second screen activation monitoring unit that has received a focus OFF notification sends a domain switch request notification to a domain control unit, and the domain control unit that has received the notification sends a domain switch notification to a first OS. Then, the first OS sends a focus ON notification to a first screen activation monitoring unit and further sends the focus OFF notification to a first application. A resource is thereby released by the first application that is implemented to release an acquired resource upon receiving the focus OFF notification. | 08-08-2013 |
Tomoki Shioda, Ora-Gun JP
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20090058518 | HIGH-PASS FILTER - A capacitor has one end receiving an input signal and the other end outputting an output signal. A resistor circuit, connected between a power source and the other end of the capacitor, functions as a resistor. The resistor circuit includes a PNP transistor having a base connected to the other end of the capacitor and an NPN transistor having a base connected to the other end of the capacitor. A differential amplifier supplies complementary current to the PNP transistor and the NPN transistor. The differential amplifier receives, as negative feedback, the output signal from the other end of the differential amplifier. | 03-05-2009 |
Tomoki Shioda, Gunma-Ken JP
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20120326755 | BIAS CIRCUIT - A bias circuit for an operating transistor has a first resistor disposed in a path for supplying a bias current to a base of the operating transistor, a first transistor for applying the bias current flowing to the first resistor, a second transistor for applying a corresponding current corresponding to the bias current supplied via at least one current mirror circuit, a third transistor having bases connected in common with the first transistor for applying the corresponding current, a second resistor for applying the corresponding current and obtaining a voltage drop corresponding to a voltage drop at the first resistor, and a fourth transistor receiving a reference voltage at an emitter side and having a base connected to an emitter side of the third transistor. | 12-27-2012 |
Tomonari Shioda, Minato-Ku JP
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20150050763 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer. | 02-19-2015 |
Tomonari Shioda, Kanagawa-Ken JP
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20110204394 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, barrier layers, and a well layer. The n-type and p-type semiconductor layers and the barrier layers include nitride semiconductor. The barrier layers are provided between the n-type and p-type semiconductor layers. The well layer is provided between the barrier layers, has a smaller band gap energy than the barrier layers, and includes InGaN. At least one of the barrier layers includes first, second, and third layers. The second layer is provided closer to the p-type semiconductor layer than the first layer. The third layer is provided closer to the p-type semiconductor layer than the second layer. The second layer includes Al | 08-25-2011 |
20120012814 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 01-19-2012 |
20120032209 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer. | 02-09-2012 |
20120058626 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickness on a silicon crystal layer. The silicon crystal layer is provided on a base body. The silicon crystal layer has a second thickness before the forming the nitride semiconductor crystal layer. The second thickness is thinner than the first thickness. The forming the nitride semiconductor crystal layer includes making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer to reduce a thickness of the silicon crystal layer from the second thickness. | 03-08-2012 |
20120132940 | OPTICAL SEMICONDUCTOR DEVICE - According to one embodiment, an optical semiconductor device includes an n-type semiconductor layer, a p-type semiconductor layer, and a functional part. The functional part is provided between the n-type semiconductor layer and the p-type semiconductor layers. The functional part includes a plurality of active layers stacked in a direction from the n-type semiconductor layer toward the p-type semiconductor layer. At least two of the active layers include a multilayer stacked body, an n-side barrier layer, a well layer and a p-side barrier layer. The multilayer stacked body includes a plurality of thick film layers and a plurality of thin film layers alternately stacked in the direction. The n-side barrier layer is provided between the multilayer stacked body and the p-type layer. The well layer is provided between the n-side barrier layer and the p-type layer. The p-side barrier layer is provided between the well layer and the p-type layer. | 05-31-2012 |
20120138890 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer. | 06-07-2012 |
20120146045 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction. | 06-14-2012 |
20120217471 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers. | 08-30-2012 |
20120223323 | WAFER, CRYSTAL GROWTH METHOD, AND SEMICONDUCTOR DEVICE - According to one embodiment, a wafer includes a substrate, a base layer, a foundation layer, an intermediate layer and a functional unit. The substrate has a major surface. The base layer is provided on the major surface and includes a silicon compound. The foundation layer is provided on the base layer and includes GaN. The intermediate layer is provided on the foundation layer and includes a layer including AlN. The functional unit is provided on the intermediate layer and includes a nitride semiconductor. The foundation layer has a first region on a side of the base layer, and a second region on a side of the intermediate layer. A concentration of silicon atoms in the first region is higher than a concentration of silicon atoms in the second region. The foundation layer has a plurality of voids provided in the first region. | 09-06-2012 |
20120292592 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 11-22-2012 |
20120292593 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes: a stacked foundation layer, and a functional layer. The stacked foundation layer is formed on an AlN buffer layer formed on a silicon substrate. The stacked foundation layer includes AlN foundation layers and GaN foundation layers being alternately stacked. The functional layer includes a low-concentration part, and a high-concentration part provided on the low-concentration part. A substrate-side GaN foundation layer closest to the silicon substrate among the plurality of GaN foundation layers includes first and second portions, and a third portion provided between the first and second portions. The third portion has a Si concentration not less than 5×10 | 11-22-2012 |
20120292632 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 11-22-2012 |
20120292648 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and the functional layer. The foundation layer is formed on an amorphous layer and includes aluminum nitride. The functional layer is formed on the foundation layer and includes a nitride semiconductor. | 11-22-2012 |
20120292649 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 11-22-2012 |
20120292650 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a light emitting layer, a p-type layer, and a transparent electrode. The n-type layer includes a nitride semiconductor and has a thickness not more than 500 nm. The light emitting layer is provided on the n-type layer. The p-type layer is provided on the light emitting layer and includes a nitride semiconductor. The transparent electrode contacts the n-type layer. The n-type layer is disposed between the transparent electrode and the light emitting layer. | 11-22-2012 |
20120295377 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate. | 11-22-2012 |
20130062612 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer, a first stacked intermediate layer, and a functional layer. The foundation layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer is provided on the foundation layer. The first stacked intermediate layer includes a first AlN intermediate layer provided on the foundation layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The functional layer is provided on the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer in contact with the first AlN intermediate layer. An Al composition ratio in the first step layer decreases stepwise in a stacking direction from the first AlN intermediate layer toward the first step layer. | 03-14-2013 |
20130087760 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×10 | 04-11-2013 |
20130087762 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 04-11-2013 |
20130196487 | METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor crystal layer. The method can include forming the nitride semiconductor crystal layer having a first thickness on a silicon crystal layer. The silicon crystal layer is provided on a base body. The silicon crystal layer has a second thickness before the forming the nitride semiconductor crystal layer. The second thickness is thinner than the first thickness. The forming the nitride semiconductor crystal layer includes making at least a portion of the silicon crystal layer incorporated into the nitride semiconductor crystal layer to reduce a thickness of the silicon crystal layer from the second thickness. | 08-01-2013 |
20130228745 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer, includes aluminum nitride, and has a compressive strain or a tensile strain. The functional layer is formed on the first layer and includes a nitride semiconductor. | 09-05-2013 |
20130306981 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 11-21-2013 |
20130309796 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more. | 11-21-2013 |
20140048770 | NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL - According to one embodiment, a nitride semiconductor wafer includes a silicon substrate, a lower strain relaxation layer provided on the silicon substrate, an intermediate layer provided on the lower strain relaxation layer, an upper strain relaxation layer provided on the intermediate layer, and a functional layer provided on the upper strain relaxation layer. The intermediate layer includes a first lower layer, a first doped layer provided on the first lower layer, and a first upper layer provided on the first doped layer. The first doped layer has a lattice constant larger than or equal to that of the first lower layer and contains an impurity of 1×10 | 02-20-2014 |
20140166978 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AIGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AIGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers. | 06-19-2014 |
20140231824 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 08-21-2014 |
20140319457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 10-30-2014 |
20150102381 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 04-16-2015 |
Tomonari Shioda, Kawasaki-Shi JP
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20110197808 | CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR - Certain embodiments provide a crystal growth method for nitride semiconductors, including: growing a first semiconductor layer containing In | 08-18-2011 |
20140209013 | CRYSTAL GROWTH METHOD FOR NITRIDE SEMICONDUCTOR HAVING A MULTIQUANTUM WELL STRUCTURE - A crystal growth method for nitride semiconductors, including the steps of growing a first semiconductor layer containing In | 07-31-2014 |
Tsuyoshi Shioda, Chiba JP
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20090142026 | Optical Waveguide Film And Photoelectric Film - An optical waveguide film and an electrical and optical hybrid circuit film having a high durability for folding while keeping the core size of the optical waveguide at a desired level are provided. The optical waveguide film is flexible, having a core made of a resin that composes an optical waveguide, a clad made of a resin, and a hollow groove extending in the same direction in which the core extends wherein at least at a portion of the optical waveguide film is folded so that the folding axis intersects with the core-extending direction at the portion. The films can contribute to the miniaturization of electronic devices. | 06-04-2009 |
20090263073 | Optical waveguide film, method for manufacturing thereof, electrical and optical hybrid circuit film including the waveguide film, and electronic device including thereof - The present invention relates to an optical waveguide film that has a high optical coupling efficiency at a light input portion and an excellent flexibility at least a part of the film. Specifically, the present invention provides an optical waveguide film that has a core and a clad comprising a resin and has a light input portion, wherein there is a portion having a thickness smaller than that of the light input portion. Further, the present invention provides an electrical and optical hybrid film in which an electrical wiring board is joined to the optical waveguide film or an electronic device in which these films are built in. | 10-22-2009 |
20100065309 | ELECTRICAL AND OPTICAL HYBRID BOARD AND MANUFACTURING METHOD OF THE SAME - To provide an electrical and optical hybrid board that has on one surface an optical waveguide and on the other surface an electrical interconnect pattern or the like, in which the core pattern and electrical interconnect pattern or the like are positioned in place with high accuracy, and a method of manufacturing the same. The method includes: preparing laminate | 03-18-2010 |
20110110638 | POLYMERIC OPTICAL WAVEGUIDE FILM - This invention provides a polymeric optical waveguide film possessing excellent sliding and bending resistance and machinability. This polymeric optical waveguide film is a bendable polymeric optical waveguide film comprising a first clad layer, a second clad layer, and a core held between the first and second clad layers. This polymeric optical waveguide film has grooves provided by a cutting process. A polymeric material constituting a layer, which is located on the outside of the core when the polymeric optical waveguide film is bent and a part or the whole of which has been cut in the thickness-wise direction by the cutting operation, has a tensile modulus of not less than 0.1 GPa and less than 1 GPa as measured at room temperature using a test piece having a thickness of 0.06 mm. | 05-12-2011 |
Tsuyoshi Shioda, Chiba-Shi, Chiba JP
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20090317048 | ELECTRICAL AND OPTICAL HYBRID FILM, AND ELECTRONIC APPARATUS RECEIVING THE SAME - An electrical and optical hybrid film having high resistance to bending. The electrical and optical hybrid film has an optical waveguide film and an electrical wiring film on the optical waveguide film. The electrical and optical hybrid film has, between its opposite ends, a separated section where the electrical wiring film and the optical waveguide film are not secured to each other. The optical waveguide film has, at the separated section, a slit extending in the longitudinal direction, and the slit penetrates the optical waveguide film. | 12-24-2009 |