Patent application number | Description | Published |
20120285929 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid. | 11-15-2012 |
20130101942 | METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof. | 04-25-2013 |
20130344249 | DIRECTED SELF-ASSEMBLY COMPOSITION FOR PATTERN FORMATION AND PATTERN-FORMING METHOD - A directed self-assembly composition for pattern formation, includes two or more kinds of polymers. The two or more kinds of polymers each do not have a silicon atom in a main chain thereof. At least one of the two or more kinds of polymers has a group binding to the polymerizing end of the main chain and having a hetero atom. | 12-26-2013 |
20140093826 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, RESIST PATTERN-FORMING METHOD, POLYMER, AND COMPOUND - A composition for forming a liquid immersion upper layer film includes a polymer component including a polymer having a structural unit represented by a formula (1); and a solvent. R | 04-03-2014 |
20140220783 | PATTERN-FORMING METHOD AND RESIST UNDERLAYER FILM-FORMING COMPOSITION - A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask. | 08-07-2014 |
20140238956 | DIRECTED SELF-ASSEMBLING COMPOSITION FOR PATTERN FORMATION, AND PATTERN-FORMING METHOD - A directed self-assembling composition for pattern formation includes a block copolymer. The block copolymer includes a polystyrene block having a styrene unit, and a polyalkyl (meth)acrylate block having an alkyl (meth)acrylate unit. The block copolymer has a group that is bound to at least one end of a main chain of the block copolymer and that includes a hetero atom. | 08-28-2014 |
20140248563 | COMPOSITION, RESIST PATTERN-FORMING METHOD, COMPOUND, METHOD FOR PRODUCTION OF COMPOUND, AND POLYMER - A composition includes a polymer component including a first polymer having a first structural unit represented by a following formula (1), and a solvent. In the formula (1), R | 09-04-2014 |
20140371466 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM - Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid. | 12-18-2014 |
20140377707 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, RESIST PATTERN-FORMING METHOD, POLYMER, AND COMPOUND - A composition for forming a liquid immersion upper layer film includes a polymer component including a polymer having a structural unit represented by a formula (1); and a solvent. R | 12-25-2014 |