Patent application number | Description | Published |
20080284001 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device, in which a semiconductor element is mounted on one side of a circuit board that is made up from an insulating layer and a wiring layer, includes metal posts provided on the side of said circuit board on which said semiconductor element is mounted; and a sealing layer provided on the side of said circuit board on which said semiconductor element is mounted such that said semiconductor element is covered and such that only portions of said metal posts are exposed. | 11-20-2008 |
20080303136 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 12-11-2008 |
20090001604 | Semiconductor Package and Method for Producing Same - An oxide layer and a metal layer composed of a gold- or platinum-group metal are formed in the stated order on a substrate. A wiring body having a wiring layer, insulating layer, via, and electrode is formed on the metal layer. A semiconductor element is then connected as a flip chip via solder balls on the wiring body electrode, and underfill is introduced between the semiconductor element and the wiring body. Subsequently, a sealing resin layer is formed so as to cover the semiconductor element and the surface of the wiring body on which the semiconductor element is mounted, thus producing a semiconductor package. A high-density, detailed, thin semiconductor package can thereby be realized. | 01-01-2009 |
20090026636 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - Semiconductor device has a semiconductor chip embedded in an insulating layer. A semiconductor device comprises a semiconductor chip formed to have external connection pads and a positioning mark that is for via formation; an insulating layer containing a non-photosensitive resin as an ingredient and having a plurality of vias; and wiring electrically connected to the external connection pads through the vias and at least a portion of which is formed on the insulating layer. The insulating layer is formed to have a recess in a portion above the positioning mark. The bottom of the recess is the insulating layer alone. Vias have high positional accuracy relative to the mark. | 01-29-2009 |
20090046441 | WIRING BOARD FOR MOUNTING SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND WIRING BOARD ASSEMBLY - A wiring board for mounting semiconductor device, includes at least a dielectric film | 02-19-2009 |
20090072404 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A highly reliable semiconductor device in which connection reliability is assured at very small vias comprises: a semiconductor substrate; a first wiring structure placed on the semiconductor substrate and having one or more first wiring layers, one or more insulating layers and a first via; a second wiring structure placed on the first wiring structure and having one or more second wiring layers, one or more second insulating layers, a second via and a third via; and an external terminal provided on the second wiring structure. The second via, which is connected to the second wiring layer of the second wiring structure and to the external terminal, has a connection interface disposed at an end of the via that is on the side of the external terminal. | 03-19-2009 |
20090137085 | METHOD OF MANUFACTURING A WIRING SUBSTRATE AND SEMICONDUCTOR DEVICE - A wiring substrate includes a base insulating film, a first interconnection formed on a top surface side of the base insulating film, a via conductor provided in a via hole formed in the base insulating film, and a second interconnection provided on a bottom surface side of the base insulating film, the second interconnection being connected to the first interconnection via the via conductor. The wiring substrate includes divided-substrate-unit regions, in each of which the first interconnection, the via conductor, and the second interconnection are formed. The wiring substrate includes a warpage-controlling pattern on the base insulating film, and has a warped shape such that when the wiring substrate is left at rest on a horizontal plate, at least a central part of each side of a plane surface of the substrate contacts the horizontal plate, with both ends of the side raised, where each of the sides extends along a second direction perpendicular to a first direction in the plane surface of the substrate. | 05-28-2009 |
20090315190 | WIRING BOARD, SEMICONDUCTOR DEVICE USING WIRING BOARD AND THEIR MANUFACTURING METHODS - A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring layer formed in one surface of the insulating layer include a first metal film exposed from the one surface and a second metal film embedded in the insulating layer and stacked on the first metal film. Edges of the first metal film project from edges of the second metal film in the direction in which the second metal film spreads. By designing the shape of the wiring layers embedded in the insulating layer in this manner, it is possible to obtain a highly reliable wiring board that can be effectively prevented from side etching in the manufacturing process and can adapt to miniaturization and highly dense packaging of wires. | 12-24-2009 |
20100087058 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first electronic circuit component and a second electronic circuit component are electrically connected to an electro-conductive member via a first solder and a second solder, respectively. The electro-conductive member is formed in a resin film. The electro-conductive member is configured as containing a second diffusion barrier metal film. The second diffusion barrier metal film prevents diffusion of the second solder. Between the electro-conductive member and the first solder, a first diffusion barrier metal film is provided. The first diffusion barrier metal film prevents diffusion of the first solder. On the first surface of the resin film and on the electro-conductive member, an adhesive metal film is formed so as to contact with the resin film and the electro-conductive member. The adhesive metal film has stronger adhesiveness to the resin film than either of those of the first solder and the first diffusion barrier metal film. | 04-08-2010 |
20100103634 | FUNCTIONAL-DEVICE-EMBEDDED CIRCUIT BOARD, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC EQUIPMENT - A circuit board includes a functional device, a circuit board embedding therein the functional device, and first and second conductive-wiring layers formed on the front and rear surfaces of the circuit board to sandwich therebetween the functional device and each include at least one conductor layer. The surface of each of the outermost patterned interconnections of the first conductive-wiring layer is exposed, and the surface of a first dielectric layer isolating the outermost patterned interconnections from one another protrudes from the surface of the each of the patterned interconnections. The patterned interconnections of the second conductive-wiring layer are connected to respective electrode terminals of the functional device, and the surface of a second dielectric layer isolating the electrode terminals from one another is substrate within the same plane as the surface of the electrode terminals disposed adjacent to the second dielectric layer. | 04-29-2010 |
20100117228 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device has an element interconnection | 05-13-2010 |
20100127405 | WIRING BOAD, SEMICONDUCTOR DEVICE IN WHICH WIRING BOARD IS USED, AND METHOD FOR MANUFATURING THE SAME - A wiring board comprising a first surface on which a first electrode is disposed and a second surface on which a second electrode is disposed; at least a single insulation layer and at least a single wiring layer; and one or a plurality of mounted semiconductor elements, wherein the second electrode disposed on the second surface is embedded in the insulation layer, the surface on the opposite side of the exposed surface on the second surface side of the second electrode is connected to the wiring layer, and all or part of the side surface of the second electrode does not make contact with the insulation layer. | 05-27-2010 |
20100232127 | WIRING BOARD COMPOSITE BODY, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE WIRING BOARD COMPOSITE BODY AND THE SEMICONDUCTOR DEVICE - A wiring board composite body includes a supporting substrate, and wiring boards formed on each of the upper and the lower surfaces of the supporting substrate. The supporting substrate includes a supporting body, and a metal body arranged on each of the upper and the lower surfaces of the supporting body. The wiring board comprises at least an insulation layer insulating upper and lower wirings, and a via connecting the upper and the lower wirings. The wiring board mounted on the metal body constitutes a wiring board with the metal body. Thus, the supporting body supporting the metal body is effectively used in a process of forming the wiring board on the metal body, and the wiring board composite body, which has advantageous structural and production characteristics, is provided. A semiconductor device and a method for manufacturing such wiring board composite body and the semiconductor device are also provided. | 09-16-2010 |
20100244231 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection. | 09-30-2010 |
20100295191 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING WIRING BOARD AND SEMICONDUCTOR DEVICE - In the wiring board, insulating layers and wiring layers are alternately laminated, and the wiring layers are electrically connected by the vias. The wiring board includes first terminals arranged in a first surface and embedded in an insulating layer, second terminals arranged in a second surface opposite to the first surface and embedded in an insulating layer, and lands arranged in an insulating layer and in contact with the first terminals. The vias electrically connect the lands and the wiring layers laminated alternately with the insulating layers. No connecting interface is formed at an end of each of the vias on the land side but a connecting interface is formed at an end of each of the vias on the wiring layer side. | 11-25-2010 |
20100314778 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In forming a semiconductor device, an insulation layer is formed on top of a semiconductor chip having a plurality of external terminals. A plurality of interconnections is formed on the insulating layer. External terminals are electrically connected to coordinated interconnections through a plurality of vias formed in the insulation layer. The interconnections are each formed integral with a via conduction part which covers the entire surfaces of the bottom and the sidewall sections of the via. The interconnection is formed so as to be narrower in its region overlying the via than the upper via diameter. | 12-16-2010 |
20110003472 | WIRING SUBSTRATE FOR MOUNTING SEMICONDUCTORS, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR PACKAGE - A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires through vias. The electrode pads are provided to have their surfaces exposed to both of the front surface and the rear surface of the insulation film, and at least a part of the side surface of the electrode pads is buried in the insulation film. The insulation film is formed by forming electrode pads on the respective two metallic plates, thereafter, laminating an insulation layer and wires on the respective metallic plates to cover the electrode pad, and adhering the insulation layers to each other for integration, and thereafter, removing the metallic plates. | 01-06-2011 |
20110075389 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprising a flat wiring board, a first LSI disposed on one surface of the wiring board, a sealing resin for covering the one surface and a side face of the first semiconductor element, and a second LSI disposed on another surface of the wiring board. The wiring board has conductive wiring as a wiring layer, an insulation resin as a support layer for the wiring layer, and a conductive through-hole that passes through the wiring layer and the support layer. Connection points between lands disposed in positions in which the external peripheral edges of the semiconductor elements transverse the interior of the lands as viewed vertically from above, which lands are selected from land portions on which the external connection terminals are formed, and the wiring board formed in the same plane as the lands, are unevenly distributed toward one side of the wiring board. Connections for very small wiring are thereby made possible, and a plurality of semiconductor elements can be very densely connected. | 03-31-2011 |
20110121445 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers. | 05-26-2011 |
20110136298 | METHOD OF MANUFACTURING A WIRING BOARD - A wiring board has an insulating layer, a plurality of wiring layers formed in such a way as to be insulated from each other by the insulating layer, and a plurality of vias formed in the insulating layer to connect the wiring layers. Of the wiring layers, a surface wiring layer formed in one surface of the insulating layer include a first metal film exposed from the one surface and a second metal film embedded in the insulating layer and stacked on the first metal film. Edges of the first metal film project from edges of the second metal film in the direction in which the second metal film spreads. By designing the shape of the wiring layers embedded in the insulating layer in this manner, it is possible to obtain a highly reliable wiring board that can be effectively prevented from side etching in the manufacturing process and can adapt to miniaturization and highly dense packaging of wires. | 06-09-2011 |
20110155433 | WIRING BOARD CAPABLE OF CONTAINING FUNCTIONAL ELEMENT AND METHOD FOR MANUFACTURING SAME - A wiring board is configured by stacking one or more conductor wiring layers and one or more insulating resin layers and comprising one or more metal vias configured to penetrate the insulating resin layer, wherein the boundary surface between the metal via and the insulating resin layer has a concavo-convex boundary cross-section structure in which the metal via and the insulating resin layer are engaged with each other. | 06-30-2011 |
20110175213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate. | 07-21-2011 |
20110281401 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A transparent board is positioned on a support board provided with a positioning mark, and a release material is provided. A semiconductor element is then positioned so that the electrode element faces upward, and the support board is then removed. An insulating resin is then formed on the release material so as to cover the semiconductor element; and a via, a wiring layer, an insulation layer, an external terminal, and a solder resist are then formed. The transparent board is then peeled from the semiconductor device through the use of the release material. A chip can thereby be mounted with high precision, there is no need to provide a positioning mark during mounting of the chip on the substrate in the manufacturing process, and the substrate can easily be removed. As a result, a semiconductor device having high density and a thin profile can be manufactured at low cost. | 11-17-2011 |
20120021357 | POSITIVE-TYPE PHOTOSENSITIVE INSULATING RESIN COMPOSITION, AND PATTERN FORMING METHOD USING SAME - A photosensitive insulating resin composition, comprising a polymer, a photosensitizer, and an amide derivative that is expressed by the following general formula (1); | 01-26-2012 |
20120068359 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating layer and the core substrate, and connects the wiring layers to each other; a semiconductor element, mounted on the first surface of the core substrate, with a surface for forming an electrode terminal(s) facing up; and a connecting portion(s) which penetrates the insulating layer disposed on the first surface and directly connects the electrode terminal of the semiconductor element and the wiring layer disposed on the first surface. A minimum wiring pitch of the wiring layer directly connected to the connecting portion is smaller than that of any of the wiring layer(s) disposed on the second surface. | 03-22-2012 |
20120133052 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism). | 05-31-2012 |
20120153501 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device in which the semiconductor chip including the external terminal(s) is embedded in an insulating layer and interconnect conductor(s) is (are) formed on the insulating layer, base hole(s) is (are) formed at position(s) of the insulating layer corresponding to the external terminal(s) in a state where the semiconductor chip has shrunk after having been embedded in the insulating layer. The interconnect conductor(s) is (are) electrically connected to the external terminal(s) through the base hole(s). | 06-21-2012 |
20120261735 | SEMICONDUCTOR DEVICE HAVING A THIN FILM CAPACITOR AND METHOD FOR FABRICATING THE SAME - In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, (Zr.sub.x, Hf.sub.1−x)O.sub.2 (010-18-2012 | |
20120319254 | WIRING BOARD WITH BUILT-IN SEMICONDUCTOR ELEMENT - A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer. | 12-20-2012 |
20130026653 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property. | 01-31-2013 |
20130050967 | FUNCTIONAL DEVICE-EMBEDDED SUBSTRATE - An object of the present invention is to provide a functional device-embedded substrate that can be thinned and suppress occurrence of warpage. The present invention provides a functional device-embedded substrate including at least a functional device including an electrode terminal, and a covering insulating layer covering at least an electrode terminal surface and a side surface of the functional device, the functional device-embedded substrate including a first pillar structure around the functional device inside the covering insulating layer, the first pillar structure including a material having a thermal expansion coefficient between thermal expansion coefficients of the functional device and the covering insulating layer, wherein the first pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the first pillar structure is smaller than a thickness of the functional device. | 02-28-2013 |
20130087927 | MULTIMEDIA PROVIDING SERVICE - Provided is a semiconductor device of higher density, thin thickness and low cost not plagued with low reliability ascribable to concentration of internal stress in an ultimate product. The semiconductor device includes a semiconductor element, and a support substrate arranged on a surface of the semiconductor element opposite to its surface provided with a pad. The support substrate is wider in area than the semiconductor element. The semiconductor device also includes a burying insulating layer on the support substrate for burying the semiconductor element in it, and a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area above the outer periphery of the semiconductor element for augmenting mechanical strength of the burying insulating layer and the fan-out interconnection (FIG. | 04-11-2013 |
20130088841 | SUBSTRATE WITH BUILT-IN FUNCTIONAL ELEMENT - The present invention has an object to provide a substrate with a built-in functional element, including the functional element above a metal plate, in which crosstalk noise between signal wirings can be reduced and higher characteristic impedance matching can be achieved. An aspect of the present invention provides a substrate with a built-in functional element, including: a metal plate that includes a concave portion and serves as a ground; the functional element that is placed in the concave portion and includes an electrode terminal; a first insulating layer that covers the functional element and is placed in contact with the metal plate; a first wiring layer including first signal wiring that is opposite the metal plate with the first insulating layer being interposed therebetween; a second insulating layer that covers the first wiring layer; and a ground layer formed of a ground plane that is opposite the first wiring layer with the second insulating layer being interposed therebetween. | 04-11-2013 |
20130127037 | SEMICONDUCTOR DEVICE BUILT-IN SUBSTRATE - An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device. | 05-23-2013 |
20140024177 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the wiring layers, and the vias is electrically connected to the metal plate. | 01-23-2014 |
20140367863 | SEMICONDUCTOR DEVICE - A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection. | 12-18-2014 |