Patent application number | Description | Published |
20080203310 | RADIATION IMAGE DETECTOR - Generation of residual images due to charge leakage is suppressed. A radiation image detector is constituted by: an upper planar electrode that transmits electromagnetic waves bearing radiation image information; a charge generating layer that generates electric charges when irradiated by the electromagnetic waves which are transmitted through the upper planar electrode; and a plurality of divided electrodes for collecting the electric charges generated by the charge generating layer. The divided electrodes have inclined electrode surfaces, which are inclined with respect to the upper planar electrode. | 08-28-2008 |
20080224049 | PLANAR RADIATION DETECTOR USING RADIATION-INDUCED-CHARGE CONVERSION FILM OF AMORPHOUS SELENIUM - In a planar radiation detector having a substrate; a charge-collection electrode; a radiation-induced-charge conversion film formed mainly of amorphous selenium; and an upper electrode which transmits radiation, or in a planar radiation detector having a substrate; a charge-collection electrode; a light-induced-charge conversion film which is formed mainly of amorphous selenium and generates electric charge when the light-induced-charge conversion film is irradiated with visible light which has passed through an upper electrode; the upper electrode which transmits the visible light emitted from a fluorescent layer; and the fluorescent layer formed of a fluorescent material which converts a radiation carrying image information into the visible light, the radiation-induced-charge conversion film or the light-induced-charge conversion film is formed of amorphous selenium or amorphous selenium alloy and has a residual oxygen concentration of 35 ppm or lower. | 09-18-2008 |
20080272320 | RADIATION IMAGE DETECTOR - An intermediate layer is located between a recording photoconductive layer and an electrode, which is either one of a bias electrode and a reference electrode, and which is located on the side at positive electric potential with respect to a charge accumulating section at the time of readout of electric charges of the charge accumulating section. The intermediate layer is an a-Se layer containing, as a specific substance, at least one kind of substance selected from the group consisting of an alkali metal fluoride, an alkaline earth metal fluoride, an alkali metal oxide, an alkaline earth metal oxide, SiO | 11-06-2008 |
20080283947 | RADIATION IMAGE DETECTOR - A thermal deformation preventing layer is located between a recording photoconductive layer, which contains a-Se as a principal constituent, and a crystallization preventing layer, which is constituted of an a-Se layer containing at least one kind of element selected from the group consisting of As, Sb, and Bi. The thermal deformation preventing layer is constituted of an a-Se layer containing at least one kind of specific substance selected from the group consisting of a metal fluoride, a metal oxide, SiO | 11-20-2008 |
20090127550 | Thin film field effect transistor and display using the same - A TFT is provided which includes, on a substrate, at least a gate electrode, a gate insulating layer; an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a carrier concentration of the active layer is 3×10 | 05-21-2009 |
20090127551 | Thin film field effect transistor and display using the same - A TFT is provided which includes on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a mean square interface roughness between the gate insulating layer and the active layer is less than 2 nm, a carrier concentration of the active layer is 1×10 | 05-21-2009 |
20090159806 | RADIOGRAPHIC IMAGE DETECTOR - A radiographic image detector includes: a bias electrode transmitting a recording electromagnetic wave carrying image information; a recording photoconductive layer consisting primarily of a-Se, the recording photoconductive layer generating electric charges when exposed to the recording electromagnetic wave transmitted through the bias electrode; and a number of charge detecting elements two-dimensionally arrayed in directions perpendicular to each other, each charge detecting element comprising a charge storage section for storing the electric charge generated at the recording photoconductive layer and a switching element for reading out an electric charge signal of the electric charge stored in the charge storage section. The radiographic image detector further includes a thin fluoride layer provided between the bias electrode and the recording photoconductive layer. | 06-25-2009 |
20130235973 | RADIOGRAPHIC PHASE-CONTRAST IMAGING APPARATUS - A radiographic phase-contrast imaging apparatus obtains a phase-contrast image using two gratings including the first grating and the second grating. The first and second gratings are adapted to form a moire pattern when a periodic pattern image formed by the first grating is superimposed on the second grating. Based on the moire pattern detected by the radiographic image detector, image signals of the fringe images, which correspond to pixel groups located at different positions with respect to a predetermined direction, are obtained by obtaining image signals of pixels of each pixel group, which includes pixels arranged at predetermined intervals in the predetermined direction, as the image signal of each fringe image, where the predetermined direction is a direction parallel to or intersecting a period direction of the moire pattern other than a direction orthogonal to the period direction. Then, a phase-contrast image is generated based on the obtained fringe images. | 09-12-2013 |
20140042416 | ORGANIC IMAGE SENSOR AND METHOD OF PRODUCING THE SAME - Pixel electrodes have end portions inclined at inclination angles α, where 30°≦α≦85°, relative to a substrate surface of a substrate. An organic layer disposed on the pixel electrodes is formed by vapor deposition using deposition beams that enter the substrate surface at incident angles θ smaller than 90°−α | 02-13-2014 |