Patent application number | Description | Published |
20080211948 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes a pixel unit having a plurality of pixels arranged in a matrix, a plurality of block lines to which signals are supplied from the pixels, transfer switches used to supply the signals from the block lines to a common signal line, and a driving circuit configured to drive the pixels, the block lines, and the transfer switches. The block lines have resetting units used to reset potentials of the block lines. With this configuration, a signal reading operation is performed at high speed in the photoelectric conversion apparatus. | 09-04-2008 |
20090073298 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a pixel including, a column signal line, a readout circuit, an output line, and an output unit. The readout circuit includes a first accumulation unit, a first opening/closing unit, a second accumulation unit, a transmission unit, and a second opening/closing unit. A capacitance of the first accumulation unit is smaller than a capacitance of the second accumulation unit, and the signal held by the second accumulation unit is read out to the output unit based on the capacitance of the second accumulation unit and the capacitance of the output line. | 03-19-2009 |
20090109314 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 04-30-2009 |
20090230290 | IMAGE SENSOR, IMAGE-SENSING APPARATUS USING THE IMAGE SENSOR, AND IMAGE-SENSING SYSTEM - An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels. | 09-17-2009 |
20090230312 | IMAGE SENSOR, IMAGE-SENSING APPARATUS USING THE IMAGE SENSOR, AND IMAGE-SENSING SYSTEM - An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels. | 09-17-2009 |
20090303364 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels. | 12-10-2009 |
20090303369 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA - The number of necessary sampling and holding capacitors is reduced. A solid-state image pickup device has signal lines to which photoreceiving elements are connected, a clamp circuit that has clamp capacitors in which one terminal is connected to the signal lines and the other terminals are short-circuited, has a switch for applying a reference voltage to the other terminals by the clamping operation, and adds signals from the plurality of photoreceiving elements provided in the row direction along with the clamping operation, adding means (switches and capacitors) which is connected to the other terminals of the clamp capacitors, adds addition signals of the respective photoreceiving element rows outputted from the other terminals and adds the signals of the plurality of photoreceiving elements provided in the column direction; an amplifier connected to the adding means; a switch for resetting the input side of the amplifier; and circuit means (switches and capacitors) for outputting an offset of the amplifier and the signal from the amplifier. | 12-10-2009 |
20100002114 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a transfer block including a first transfer unit and a second transfer unit, wherein the first transfer unit includes a first impedance converter which transfers a first signal to the output unit, and the first transfer unit transfers, as a third signal, a difference signal between a first offset of the first impedance converter and a signal obtained by superimposing the first offset on the first signal, the second transfer unit includes a second impedance converter which transfers a second signal to the output unit, and the second transfer unit transfers, as a fourth signal, a difference signal between a second offset of the second impedance converter and a signal obtained by superimposing the second offset on the second signal, and the output unit calculates a difference between the third signal and the fourth signal, generating and outputting an image signal. | 01-07-2010 |
20100157124 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA - In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode. | 06-24-2010 |
20100231767 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING THE SAME - An object of the present invention is to provide a solid-state imaging apparatus capable of providing a high S/N ratio in a plurality of operation modes, and a method for driving the same. Provided is a solid-state imaging apparatus including: a plurality of pixels ( | 09-16-2010 |
20110032404 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a pixel outputting a pixel signal; and an amplifier for amplifying the pixel signal. The amplifier includes an input capacitor connected between an input terminal of the operational amplifier and the pixel, a feedback capacitor connected between the input and output terminals of the amplifier, an initializing switch connected between the input terminal and the output terminal of the amplifier, a first capacitor connected in parallel to the feedback capacitor, a second capacitor connected in parallel to the feedback capacitor, a first switch connected between an one terminal of the feedback capacitor and an one terminal of the first capacitor, and a second switch connected between the one terminal of the first capacitor and an one terminal of the second capacitor. One terminal of the first or second capacitor is connected to the one terminal of the second capacitor through the first and second switches. | 02-10-2011 |
20110036986 | IMAGE SENSOR, IMAGE-SENSING APPARATUS USING THE IMAGE SENSOR, AND IMAGE-SENSING SYSTEM - An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels. | 02-17-2011 |
20110157441 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 06-30-2011 |
20120006975 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels. | 01-12-2012 |
20120006993 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. | 01-12-2012 |
20120007197 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus comprising a plurality of pixels each including a photoelectric conversion element, and a light shielding layer which covers the photoelectric conversion element is provided. The light shielding layer comprises a first light shielding portion which covers at least part of a region between the photoelectric conversion elements that are adjacent to each other, and a second light shielding portion for partially shielding light incident on the photoelectric conversion element of each of the plurality of pixels. An aperture is provided for the light shielding layer, the remaining component of the incident light passing through the aperture. A shape of the aperture includes a cruciform portion including a portion extending in a first direction and a portion extending in a second direction that intersects the first direction. | 01-12-2012 |
20120007203 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus including pixels each including a photoelectric conversion element, and a light shielding layer covering the photoelectric conversion element is provided. For each of the photoelectric conversion elements, the light shielding layer includes a light shielding portion which shields a portion of incident light to the photoelectric conversion element, and an aperture which passes another portion of the incident light. The pixels include first and second pixels which have different areas on a planar view of the photoelectric conversion element. The area of the photoelectric conversion element in the first pixel is larger than the area of the photoelectric conversion element in the second pixel on the planar view. An area of the light shielding portion included in the first pixel is larger than an area of the light shielding portion included in the second pixel. | 01-12-2012 |
20120008029 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region. | 01-12-2012 |
20120008030 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus including a plurality of pixels each having a photoelectric conversion element, and an amplifier circuit which amplifies and outputs signals of the plurality of pixels is provided. The plurality of pixels include a first pixel having a first photoelectric conversion element with a first sensitivity and a second pixel having a second photoelectric conversion element with a second sensitivity higher than the first sensitivity. The amplifier circuit amplifies a signal output from the first pixel by a first gain and a signal output from the second pixel by a second gain smaller than the first gain. | 01-12-2012 |
20120008031 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type. | 01-12-2012 |
20120008177 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a pixel array in which a plurality of unit cells are arranged to form a plurality of rows and a plurality of columns, wherein each of the plurality of unit cells includes a pixel, and the pixel comprising a photoelectric conversion element and an in-pixel readout circuit which outputs a signal corresponding to charges generated in the photoelectric conversion element, power is supplied to the plurality of unit cells via a power supply line and a ground line, and at least one of the plurality of unit cells includes at least a part of a capacitive element having a first electrode connected to the power supply line and a second electrode connected to the ground line. | 01-12-2012 |
20120217603 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 08-30-2012 |
20130140435 | SOLID-STATE IMAGING APPARATUS - There is provided a solid-state imaging apparatus that can prevent degradation of image quality. The solid-state imaging apparatus includes a plurality of pixels ( | 06-06-2013 |
20130140438 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130140665 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130161701 | IMAGE PICKUP DEVICE - An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view. | 06-27-2013 |
20130222659 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA HAVING ARRAYED PIXELS INCLUDING AMPLIFYING UNITS - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 08-29-2013 |
20130299678 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - An imaging apparatus has an imaging area formed by arranging a plurality of imaging blocks each including a pixel array, a plurality of vertical signal lines, a horizontal output line commonly provided for the plurality of vertical signal lines to read out signals read out to the plurality of vertical signal lines, a first scanning circuit, and a second scanning circuit, wherein signals of the pixels of a selected row in the pixel array are read out to the plurality of vertical signal lines in accordance with a driving pulse from the first scanning circuit, the signals read out to the plurality of vertical signal lines are sequentially read out to the horizontal output line in accordance with a driving pulse from the second scanning circuit, and a length in a row direction of the pixel array is smaller than a length in a column direction of the pixel array. | 11-14-2013 |
20130341683 | SOLID-STATE IMAGING DEVICE AND CAMERA - A solid-state imaging device includes a photoelectric conversion unit that has a charge accumulation region and is configured to accumulate a charge that is generated in accordance with incident light in the charge accumulation region, and a transfer unit configured to transfer the charge accumulated in the charge accumulation region from the charge accumulation region. A potential distribution having a plurality of steps is formed in the charge accumulation region, and the further away from the transfer unit a step of the plurality of steps is, the greater the magnitude of the step is. | 12-26-2013 |
20140009651 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor including a wiring portion which includes a first line, a second line and a control line, in first to third regions arranged sequentially, wherein the first line includes a first pattern in a first layer in the first and second regions and a second pattern in a second layer in the third region, and these patterns are connected each other between the second region and the third region, the second line includes a third pattern in the second layer in the first region and a fourth pattern in the first layer in the second and third regions, the these patterns are connected each other between the first region and the second region, and the control line includes a pattern in the second layer in the second region, intersecting with the first pattern and the fourth pattern. | 01-09-2014 |
20140054445 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREFOR - An image capturing apparatus having pixels is provided. Each pixel includes a photoelectric conversion unit including a charge accumulation region, an output unit configured to output a signal based on a potential of a node electrically connected to the charge accumulation region, and a connection unit configured to electrically connect a capacitance to the node. The charge accumulation region includes a first portion and a second portion. Charge is configured to be first accumulated in the first portion, and, after the first portion is saturated, be accumulated in the second portion. The output unit is configured to output a first signal based on the potential of the node before the capacitance is connected thereto, and, then a second signal based on the potential of the node after the capacitance is connected thereto. | 02-27-2014 |
20140078354 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a pixel array, an effective signal line, a dummy pixel, a dummy signal line, and a processing unit. The effective pixels in the pixel array include a photoelectric converter, a charge-voltage converter, and an output unit. The dummy pixel includes a charge-voltage that has the same configuration as the charge-voltage converter of the effective pixel, and an output unit. A shortest distance between the charge-voltage converter of the dummy pixel and the effective signal line is longer than a shortest distance between the charge-voltage converter of the dummy pixel and the dummy signal line. | 03-20-2014 |
20150035013 | IMAGE PICKUP DEVICE - An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view. | 02-05-2015 |