Shim, MA
Anne Shim, Billerica, MA US
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20080224358 | Nano-Molding Process - A nano-molding process including an imprint process that replicates features sizes less than 7 nanometers. The nano-molding process produces a line edge roughness of the replicated features that is less than 2 nanometers. The nano-molding process including the steps of: a) forming a first substrate having nano-scale features formed thereon, b) casting at least one polymer against the substrate, c) curing the at least one polymer forming a mold, d) removing the mold from the first substrate, e) providing a second substrate having a molding material applied thereon, f) pressing the mold against the second substrate allowing the molding material to conform to a shape of the mold, g) curing the molding material, and h) removing the mold from the second substrate having the cured molding material revealing a replica of the first substrate. | 09-18-2008 |
20090212310 | SOFT LITHOGRAPHIC MOLDING OF SURFACE RELIEF OUTPUT COUPLERS FOR ORGANIC LIGHT EMITTING DIODES - The present invention provides a method and apparatus for surface relief output coupling in organic light emitting diodes is provided. The method includes forming a pattern in a surface of an elastomer ( | 08-27-2009 |
Anne Katja Shim, Billerica, MA US
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20080242744 | PROCESS FOR MAKING SILICONE-IN-WATER EMULSIONS - A process is disclosed for making a silicone-in-water emulsion by forming a hydrophobic phase containing a silicone component, mixing one or more surfactants with the hydrophobic phase, adding water to the hydrophobic phase and shear mixing in a twin-screw extruder to form a silicone in water emulsion. | 10-02-2008 |
Heejae Shim, Cambridge, MA US
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20090247410 | JOSEPHSON JUNCTION DEVICE FOR SUPERCONDUCTIVE ELECTRONICS WITH A MAGNESIUM DIBORIDE - A Josephson junction (JJ) device includes a buffered substrate comprising a first buffer layer formed on a substrate. A second buffer layer is formed on the first buffer layer. The second buffer layer includes a hexagonal compound structure. A trilayer structure is formed on the buffered substrate comprising at least two layers of a superconducting material. A thin tunnel barrier layer is positioned between the at least two layers. The buffered substrate is used to minimize lattice mismatch and interdiffusion in the trilayer structure so as to allow the JJ device to operate above 20 K. 12 | 10-01-2009 |
John Shim, Shrewsbury, MA US
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20130251233 | METHOD FOR CREATING A REPORT FROM RADIOLOGICAL IMAGES USING ELECTRONIC REPORT TEMPLATES - Creating a report from a radiological image using an electronic report template, the radiological image being an image of an anatomic region and the report template initially having empty fields includes displaying the radiological image on a screen of a workstation; providing a structural template, the structural template being a map of a reference region that corresponds to the anatomical region, t structural template identifying a plurality of anatomical landmarks each associated with corresponding landmark data; fitting the structural template with the radiological image such that the anatomical landmarks match corresponding anatomical landmarks of the radiological image; using the fitting to generate pathological data indicative of a pathology in one or more of the anatomical landmark and using the landmark data and pathological data to populate the empty field of the report template to thereby create the report. | 09-26-2013 |
Jung Uk Shim, Lexington, MA US
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20100105866 | MICROFLUIDIC MANIPULATION OF FLUIDS AND REACTIONS - The present invention relates generally to microfluidic structures, and more specifically, to microfluidic structures and methods including microreactors for manipulating fluids and reactions. In some embodiments, structures and methods for manipulating many (e.g., 1000) fluid samples, i.e., in the form of droplets, are described. Processes such as diffusion, evaporation, dilution, and precipitation can be controlled in each fluid sample. These methods also enable conditions within the fluid samples (e.g., concentration) to be controlled. Manipulation of fluid samples can be useful for a variety of applications, including testing for reaction conditions, e.g., in crystallization, chemical, and biological assays. | 04-29-2010 |
Keun Sup Shim, Cambridge, MA US
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20110258420 | EXECUTION MIGRATION - An execution migration approach includes bringing the computation to the locus of the data: when a memory instruction requests an address not cached by the current core, the execution context (current program counter, register values, etc.) moves to the core where the data is cached. | 10-20-2011 |
Kyu-Ha Shim, Andover, MA US
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20100155909 | METHOD TO ENHANCE CHARGE TRAPPING - Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device. | 06-24-2010 |
20110033998 | OPTIMIZED HALO OR POCKET COLD IMPLANTS - An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by increasing leakage current, decreasing the noise margin and increasing the minimum gate voltage. The halo or packet implant is performed at cold temperature, which decreases the damage caused to the crystalline structure and improves the amorphization of the crystal. The use of cold temperature also allows the use of lighter elements for the halo implant, such as boron or phosphorus. | 02-10-2011 |
20110034014 | COLD IMPLANT FOR OPTIMIZED SILICIDE FORMATION - A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0° C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a silicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the silicide. By performing this pre-silicide implant at cold temperatures, similar results can be obtained. | 02-10-2011 |
20130005155 | METHOD TO ENHANCE CHARGE TRAPPING - Methods of improving charge trapping are disclosed. One such method includes forming an oxide-nitride-oxide tunnel stack and a silicon nitride layer on the oxide-nitride-oxide tunnel stack. This silicon nitride layer is implanted with ions. These ions may function as electron traps or as fields. The silicon nitride layer may be part of a flash memory device. | 01-03-2013 |