Sheng-Min
Sheng-Min Huang, Pingjhen City TW
Sheng-Min Huang, Tainan City TW
Patent application number | Description | Published |
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20130200998 | WIRELESS LIGHT CONTROL APPARATUS - A wireless light control apparatus has a signal transmitting unit and a signal receiving unit. The signal transmitting unit has a digital encoder to generate an examination code based on a transmitting key and a light driving signal. The digital encoder generates a data package based on a transmitting recognition code and the examination code. A wireless transmitter module sends out the data package. The signal receiving unit has a micro-controller having a receiving key and a receiving recognition code respectively matching the transmitting key and the transmitting recognition code. The micro-controller receives the data package through a wireless receiver module and decodes the data package to obtain the light driving signal based on the receiving key and the receiving recognition code. The repetition possibility of the recognition codes is low and the incorrect operations of the signal receiving unit decrease. | 08-08-2013 |
Sheng-Min Yu, Pingzhen City TW
Patent application number | Description | Published |
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20140087549 | METHOD FOR FORMING PATTERNED DOPING REGIONS - A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate. | 03-27-2014 |
Sheng-Min Yu, Chutung TW
Patent application number | Description | Published |
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20140080313 | ETCHING COMPOSITION AND METHOD FOR ETCHING A SEMICONDUCTOR WAFER - An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched. | 03-20-2014 |