Patent application number | Description | Published |
20130287287 | METHOD AND APPARATUS FOR DEFECT IDENTIFICATION - A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height. | 10-31-2013 |
20130298088 | System and Method for Combined Intraoverlay and Defect Inspection - A method and system for measuring layer overlay and for inspecting a mask for defects unrelated to overlay utilizing a singe comprehensive tool is disclosed. An exemplary method includes receiving a mask design database that corresponds to a mask and has a die area with a mask database feature. A mask image of the mask is received, and a comprehensive inspection system compares the mask image to the mask design database in order to detect mask defects that are not related to layer alignment. The system produces mask defect information corresponding to the mask defects. The comprehensive inspection system also compares the mask image to the mask design database to determine a database-to-mask offset. From the database-to-mask offset, a mask overlay characteristic is determined. | 11-07-2013 |
20140051252 | DEVICE MANUFACTURING AND CLEANING METHOD - A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H | 02-20-2014 |
20140178804 | Stacked Mask - The present disclosure describes a mask. The mask includes a low thermal expansion material (LTEM) substrate, at least two absorber layers, and a spacer layer separating the two absorber layers. The first absorber layer is deposited over the LTEM substrate. The mask further includes a topcoat layer over the absorber layer. A thickness of the spacer layer is approximately equal to a height of a topography feature on a wafer substrate multiplied by the square of a demagnification of an objective lens. The absorber layers include staged patterns. | 06-26-2014 |
20140205938 | EUV Mask and Method for Forming the Same - An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern. | 07-24-2014 |
20150104731 | Lithographic Photomask With Inclined Sides - A lithographic process will use a mask or photomask. The photomask includes a first material layer, the first material layer providing a first outer surface of the photomask. The photomask also includes a second material layer over the first material layer, the second material layer providing a second outer surface of the photomask. The two outer surfaces are substantially in parallel and a distance between the two outer surfaces along a first axis perpendicular to the two outer surfaces defines a thickness of the photomask. Also, the two outer surfaces are connected by a plurality of sides, at least one of the sides is not perpendicular to the two outer surfaces and the at least one of the sides provides substantial area for holding the lithographic photomask. | 04-16-2015 |
20150212419 | Lithography System And Method For Haze Elimination - The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a pellicle joined to the pellicle frame thereby forming a sealed enclosure bounded by the pellicle, the pellicle frame, and the mask. The apparatus further includes photo-catalyst particles introduced into the sealed enclosure before the sealed enclosure is formed. The photo-catalyst particles prevent haze formation within the enclosure during lithography exposure processes. | 07-30-2015 |