Patent application number | Description | Published |
20120099041 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND LIQUID CRYSTAL DISPLAY - Embodiments of the invention disclose an array substrate and a manufacturing method thereof and a liquid crystal display. In the array substrate, an additional electrode is formed above a gate line, the additional electrode and the gate line are spaced from each other by a gate insulation layer, and the additional electrode is connected electrically with the common electrode line; pixel electrode extends to over the additional electrode and is overlapped with the additional electrode, the overlapped portion of the pixel electrode and both the additional electrode and the common electrode line forms a storage capacitor. The liquid crystal display according to the embodiment of the invention comprises the above array substrate. | 04-26-2012 |
20130143350 | MANUFACTURE METHOD OF SENSOR - An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer. | 06-06-2013 |
20140063503 | ETCHING TIME DETECTION MEANS AND METHOD FOR ETCHING DEVICE - An etching time detection means and an etching time detection method for an etching device. The detection means comprises: a light wave emitter fixed on one substrate of the etching device, a light wave receiver fixed on another substrate and opposed to the light wave emitter, a detection system communicated with the light wave emitter and the light wave receiver for receiving light intensity signals and calculating etching time. With the detection means and the detection method, the automatical detection of etching time can be achieved and the deviation caused by visual observation can be effectively avoided. | 03-06-2014 |
20140077212 | SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode. | 03-20-2014 |
20140077282 | TFT FLAT SENSOR AND MANUFACTURING METHOD THEREFOR - A TFT flat sensor comprises pixel units each comprising: a common electrode and a common electrode insulating layer on a substrate, wherein a first via hole is provided in the common electrode insulating layer at a location corresponding to the common electrode; a gate electrode on the common electrode insulating layer; a first conductive film layer on the common electrode and the gate electrode wherein the first conductive film layer contacts the common electrode through a first via hole; a gate insulating layer, an active layer, a drain electrode and a source electrode, a second conductive film layer, a protection layer and a third conductive film layer on the first conductive film layer; a second via hole is provided in the protection layer at a location corresponding to the source electrode through which the third conductive film layer contacts the source electrode. | 03-20-2014 |
20140087510 | Manufacturing Method Of An Amorphous-Silicon Flat-Panel X-Ray Sensor - An embodiment of the present invention provides a manufacturing method of an amorphous-silicon flat-panel X-ray sensor; the method reduces the number of mask plates to be used, simplifies the production processes, saves production costs, while also improving the product yield. The manufacturing method comprises: on a substrate, after a gate scan line is formed, forming a data line, a TFT switch element and a photosensitive element through one patterning process, wherein on the mask plate used in the patterning process, a region corresponding to a channel of the TFT switch element is semi-transmissive, whereas regions respectively corresponding to the data line, the photosensitive element and the portion of the TFT switch element other than the channel thereof are non-transmissive; thereafter, on the substrate formed with the TFT switch element and the photosensitive element, a passivation layer and a bias line are formed. | 03-27-2014 |
20140103334 | Oxide Semiconductor Thin Film Transistor, Manufacturing Method, And Display Device Thereof - An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer ( | 04-17-2014 |
20140125890 | THREE-DIMENSIONAL GLASSES AND CONTROL CHIP THEREOF - Embodiments of the present invention provide three-dimensional glasses and a control chip thereof. The three-dimensional glasses comprise: a normal black mode liquid crystal eyeglass; a normal white mode liquid crystal eyeglass; and a control chip, connected to both of the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass, wherein a voltage output terminal of the control chip simultaneously supplies a high level or a low level to the normal black mode liquid crystal eyeglass and the normal white mode liquid crystal eyeglass based on a predetermined high and low level switching frequency. | 05-08-2014 |
20140175430 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE - The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a base substrate, a gate electrode, an active layer, source/drain electrodes, a pixel electrode and one or more insulating layers, wherein at least one of the insulating layers comprises a bottom insulating sub-layer and a top insulating sub-layer, the top insulating sub-layer having a hydrogen content higher than that of the bottom insulating sub-layer. | 06-26-2014 |
20140231804 | SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and its fabrication method are provided, the sensor comprises: a base substrate ( | 08-21-2014 |
20140335641 | METHOD FOR FABRICATING SENSOR - A method for fabricating a sensor includes: forming, on a base substrate, a pattern of a source electrode and a drain electrode, a pattern of a data line, a pattern of a receiving electrode, a pattern of a photodiode, and a pattern of a transparent electrode disposed by using a first patterning process; forming a pattern of an ohmic layer by using a second patterning process; forming a pattern of an active layer by using a third patterning process; forming a pattern of a gate insulating layer by using a fourth patterning process, wherein the gate insulating layer has a via hole above the transparent electrode; and forming a pattern of a gate electrode, a pattern of a gate line, and a pattern of a bias line connected to the transparent electrode via the via hole above the transparent electrode by using a fifth patterning process | 11-13-2014 |
20140342490 | METHOD FOR FABRICATING SENSOR - A method for fabricating a sensor, comprises: forming, on a base substrate, a pattern of a data line ( | 11-20-2014 |
20150014751 | SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved. | 01-15-2015 |
20150041870 | SENSOR AND METHOD FOR FABRICATING THE SAME - A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein: the TFT device is a top gate TFT; the photodiode sensing device includes: a bias electrode and a bias electrode pin connected with the bias electrode, both of which are disposed on the base substrate; a photodiode disposed on the bias electrode and a transparent electrode disposed on the photodiode and connected with the source electrode. | 02-12-2015 |
20150053967 | OXIDE TFT, PREPARATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE - An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H | 02-26-2015 |