Patent application number | Description | Published |
20080203376 | Phase change memories with improved programming characteristics - A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar. | 08-28-2008 |
20080273372 | Method of Programming Multi-Layer Chalcogenide Devices - A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state. | 11-06-2008 |
20090057645 | Memory element with improved contacts - A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material. | 03-05-2009 |
20090109737 | Method of restoring variable resistance memory device - Methods of programming a phase-change memory device that remedy device failure. The methods includes applying a sequence of two or more electrical energy pulses to the device, where the sequence of pulses includes positive polarity pulses and negative polarity pulses. In one method, two or more pulses of an initial polarity are applied and are followed by one or more pulses having opposite polarity. In another method, pulses of an initial polarity are repeatedly applied until the device fails and one or more pulses of opposite polarity are subsequently applied to restore the device to its initial performance. The pulses may be set pulses, reset pulses, or pulses that produce programmed states having a resistance intermediate between the set resistance and reset resistance of the device. | 04-30-2009 |
20090142882 | Phase Change Memories With Improved Programming Characteristics - A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar. | 06-04-2009 |
20090244962 | Immunity of phase change material to disturb in the amorphous phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 10-01-2009 |
20100321991 | Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated State - A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge | 12-23-2010 |
20110240943 | Immunity of Phase Change Material to Disturb in the Amorphous Phase - Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb. | 10-06-2011 |