Patent application number | Description | Published |
20080213496 | Method of coating semiconductor processing apparatus with protective yttrium-containing coatings - Methods of applying specialty ceramic materials to semiconductor processing apparatus, where the specialty ceramic materials are resistant to halogen-comprising plasmas. The specialty ceramic materials contain at least one yttrium oxide-comprising solid solution. Some embodiments of the specialty ceramic materials have been modified to provide a resistivity which reduces the possibility of arcing within a semiconductor processing chamber. | 09-04-2008 |
20090036292 | Plasma-resistant ceramics with controlled electrical resistivity - Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential. | 02-05-2009 |
20090056745 | WET CLEAN PROCESS FOR RECOVERY OF ANODIZED CHAMBER PARTS - A cleaning process for recovering an anodized aluminum part is particularly useful when the part has been exposed to a fluorine-containing plasma in etch reactor. The part is bathed in an agitated solution of a fluoride acid, such as ammonium fluoride, which converts aluminum fluoride to a soluble fluoride. The part is rinsed in water. The pores of the cleaned anodization may be resealed by a submerging the part in hot agitated deionized water. | 03-05-2009 |
20090087615 | Corrosion-resistant gas distribution plate for plasma processing chamber - Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g/cm | 04-02-2009 |
20090162647 | Erosion resistant yttrium comprising metal with oxidized coating for plasma chamber components - An article which is resistant to corrosion or erosion by chemically active plasmas and a method of making the article are described. The article is comprised of a metal or metal alloy substrate having on its surface a coating which is an oxide of the metal or metal alloy. The structure of the oxide coating is columnar in nature. The grain size of the crystals which make up the oxide is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and wherein the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. Typically the metal is selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. | 06-25-2009 |
20090214825 | Ceramic coating comprising yttrium which is resistant to a reducing plasma - Particulate generation has been a problem in semiconductor device processing in highly corrosive plasma environments. The problem is exacerbated when the plasma is a reducing plasma. Empirically produced data has shown that the formation of a plasma spray coated yttrium-comprising ceramic such as yttrium oxide, Y | 08-27-2009 |
20100119843 | PLASMA RESISTANT COATINGS FOR PLASMA CHAMBER COMPONENTS - Plasma resistant coating materials, plasma resistant coatings and methods of forming such coatings on hardware components. In one embodiment, hardware component is an electrostatic chuck (ESC) and the plasma resistant coating is formed on a surface of the ESC. The plasma resistant coatings are formed by methods other than thermal spraying to provide plasma resistant coatings having advantageous material properties. | 05-13-2010 |
20100140222 | FILLED POLYMER COMPOSITION FOR ETCH CHAMBER COMPONENT - A filled polymer composition having improved plasma resistance is disclosed. The composition includes a particle filler dispersed in a polymer matrix. The particle filler can be Nb | 06-10-2010 |
20100156054 | HIGH TEMPERATURE ELECTROSTATIC CHUCK BONDING ADHESIVE - Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content Σ D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al | 06-24-2010 |
20110198034 | GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING - Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes. | 08-18-2011 |
20120125488 | Method of producing a plasma-resistant thermal oxide coating - A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate. | 05-24-2012 |
20130022838 | Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber - Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential. | 01-24-2013 |
20130284374 | HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY - Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end. | 10-31-2013 |
20140154465 | SUBSTRATE SUPPORT ASSEMBLY HAVING A PLASMA RESISTANT PROTECTIVE LAYER - A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising Y | 06-05-2014 |
20140177123 | SINGLE-BODY ELECTROSTATIC CHUCK - An electrostatic chuck includes a thermally conductive base having a plurality of heating elements disposed therein. A metal layer covers at least a portion of the thermally conductive base, wherein the metal layer shields the plurality of heating elements from radio frequency (RF) coupling and functions as an electrode for the electrostatic chuck. A plasma resistant dielectric layer covers the metal layer. | 06-26-2014 |