Patent application number | Description | Published |
20080212390 | Bulk bias voltage level detector in semiconductor memory device - There is provided a bulk bias voltage VBB level detector in a semiconductor memory device capable of improving tWR fail generated at a low temperature by compensating a temperature variance. The VBB level detector includes A bulk bias voltage level detector in a semiconductor memory device, comprising: a voltage divider for generating detection voltage based on an inputted bulk voltage; and a CMOS circuit for generating a output signal having predetermined logic value determined by the detection voltage wherein the voltage divider includes a first transistor having a gate coupled to a ground voltage and a second transistor having a gate coupled to an internal power voltage and a bulk coupled to the inputted bulk voltage. | 09-04-2008 |
20080303504 | Semiconductor device - A semiconductor device includes: a first reference voltage generator for generating a first reference voltage; a first band gap circuit for dividing a voltage at a second reference voltage output node to produce a first and a second band gap voltages having a property relative to temperature variations; a first comparator for receiving the first reference voltage as a bias input and comparing the first band gap voltage with the second band gap voltage; and a first driver for pull-up driving the second reference voltage output node in response to an output signal of the first comparator. | 12-11-2008 |
20090059701 | Core voltage discharger and semiconductor memory device with the same - A core voltage discharger is capable of adjusting an amount of a current discharged according to temperature. The discharger for decreasing a level of a predetermined voltage receives temperature information from an on die thermal sensor and discharges a different amount of current in response to the temperature information. | 03-05-2009 |
20090121699 | BANDGAP REFERENCE VOLTAGE GENERATION CIRCUIT IN SEMICONDUCTOR MEMORY DEVICE - Bandgap reference voltage generation circuit in semiconductor memory device includes a first current generator configured to generate a first current proportional to a change of a temperature by using temperature characteristic of a diode-connected MOS transistor, a second current generator configured to generate a second current inversely proportional to the change of the temperature by using the temperature characteristic of a diode-connected MOS transistor and a summation unit configured to mirror and sum the output currents of the first current generator and the second current generator, and output a reference voltage. | 05-14-2009 |
20090140793 | INTERNAL VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE - An internal voltage generation circuit of a semiconductor memory device controls a dead zone voltage, in which the driving unit that supplies a power supply voltage, does not need to operate. An internal voltage having a dead zone is determined by first and second driving signals based on a level of a reference voltage, and by selectively supplying first and second voltages by means of the first and second driving signals. | 06-04-2009 |
20090146685 | CALIBRATION CIRCUIT OF ON-DIE TERMINATION DEVICE - A calibration circuit of an on-die termination device includes a code generating unit configured to receive a voltage of a calibration node connected to an external resistor and a reference voltage to generate pull-up calibration codes. The calibration circuit also includes a pull-up calibration resistor unit configured to pull up the calibration node in response to the pull-up calibration codes. The pull-up calibration resistor unit is calibrated such that its resistance becomes higher as a power supply voltage increases. | 06-11-2009 |
20090257289 | INTERNAL VOLTAGE GENERATOR AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage. | 10-15-2009 |
20100091583 | MEMORY DEVICE HAVING LATCH FOR CHARGING OR DISCHARGING DATA INPUT/OUTPUT LINE - A semiconductor memory device of the claimed invention, having an active state for performing a read or write operation and an inactive state except for the active state includes a data input/output (I/O) line; a pull-up latch unit for pulling-up the data I/O line when the semiconductor memory device is in the inactive state; a pull-down latch unit for pulling-down the data I/O line when the semiconductor memory device is in the inactive state; and a selection unit for selectively driving one of the pull-up latch unit and the pull-down latch unit. | 04-15-2010 |
20110215845 | POWER-UP SIGNAL GENERATOR FOR USE IN SEMICONDUCTOR DEVICE - In an apparatus for generating a power-up signal, a mode register set (MRS) and other circuits are prevented from being reset, thereby providing stable circuit operation. A final power-up signal is not disabled even though an internal voltage generating unit is turned off at a test mode. The apparatus includes a power-up signal generator for producing a power-up signal; a multiplexing unit for selectively outputting the power-up signal or a static voltage signal in a test mode; and a power-up signal generator for producing a final power-up signal in response to the power-up signal of the power-up signal generator and an output signal of the multiplexing unit as the final power-up signal. | 09-08-2011 |
20110221508 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first reference voltage generator for generating a first reference voltage; a first band gap circuit for dividing a voltage at a second reference voltage output node to produce a first and a second band gap voltages having a property relative to temperature variations; a first comparator for receiving the first reference voltage as a bias input and comparing the first band gap voltage with the second band gap voltage; and a first driver for pull-up driving the second reference voltage output node in response to an output signal of the first comparator. | 09-15-2011 |
20130043933 | INTERNAL VOLTAGE GENERATOR AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage. | 02-21-2013 |