Patent application number | Description | Published |
20080211746 | DRIVING CIRCUIT FOR AN OLED (ORGANIC LIGHT EMISSION DIODE), IN PARTICULAR FOR A DISPLAY OF THE AM-OLED TYPE - A driving circuit of an OLED diode is inserted between a first and a second voltage reference and having at least one input terminal receiving an input voltage signal and an output terminal for the generation of a driving current of the OLED diode, the driving circuit having at least one driver transistor having a first conduction terminal connected to the first voltage reference, a second conduction terminal connected to the output terminal and a control terminal connected to at least one first capacitor and one second capacitor. The first capacitor is inserted between this control terminal and an inner circuit node and the second capacitor is inserted between the inner circuit node and the second voltage reference, the driving circuit | 09-04-2008 |
20080213961 | PROCESS FOR MANUFACTURING A TFT DEVICE WITH SOURCE AND DRAIN REGIONS HAVING GRADUAL DOPANT PROFILE - Process for realizing TFT devices on a substrate which comprises the steps of: forming on the substrate, in cascade, an amorphous silicon layer and a heavily doped amorphous silicon layer, forming a photolithographic mask on the heavily doped amorphous silicon layer provided with an opening, removing the heavily doped amorphous silicon layer through the opening for realizing opposite portions of the heavily doped amorphous silicon layer whose cross dimensions decrease as long as they depart from the amorphous silicon layer, removing the photolithographic mask, carrying out a diffusion and activation step of the dopant contained in the portions of the heavily doped amorphous silicon layer inside the amorphous silicon layer, for realizing source/drain regions of said TFT device. | 09-04-2008 |
20100163709 | SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor. | 07-01-2010 |
20100163759 | RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor. | 07-01-2010 |
20110159384 | CARTRIDGE FOR HYDROGEN PRODUCTION, SYSTEM FOR HYDROGEN PRODUCTION AND CORRESPONDING PROCESS OF MANUFACTURE - An embodiment of a cartridge for hydrogen production comprises a reaction chamber having a catalyst and a tank chamber comprising a reactant suitable for reacting with said catalyst for the production of gaseous hydrogen and comprising a fluidic conduit of connection between the tank chamber and the reaction chamber, the cartridge comprising a single body associated with a piston element, said piston element being suitable for defining in said single body said tank chamber and said reaction chamber, said piston element being activated for regulating the flow of the reactant in said fluidic conduit. | 06-30-2011 |
20120007150 | INTEGRATED DEVICE OF THE TYPE COMPRISING AT LEAST A MICROFLUIDIC SYSTEM AND FURTHER CIRCUITRY AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a device integrated on a semiconductor substrate of a type comprising at least one first portion for the integration of at least one microfluidic system, and a second portion for the integration of an additional circuitry. The microfluidic system comprises at least one cavity realized in a containment layer of the integrated device closed on top by at least one portion of a polysilicon layer, this polysilicon layer being a thin layer shared by the additional circuitry and the closing portion of the cavity realizing a piezoresistive membrane for the microfluidic system. | 01-12-2012 |
20130004952 | CARTRIDGE FOR BIOCHEMICAL ANALYSES, SYSTEM FOR BIOCHEMICAL ANALYSES, AND METHOD OF CARRYING OUT A BIOCHEMICAL PROCESS - A cartridge for biochemical analyses includes a support, a structure, which is set on the support and contains wells for receiving a solution, and photodetectors on the support, in positions corresponding to respective wells. | 01-03-2013 |
20130264949 | SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor. | 10-10-2013 |
20130309803 | RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS - An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor. | 11-21-2013 |