Patent application number | Description | Published |
20080240974 | Age-hardenable copper alloy - An age-hardenable copper alloy made of 1.2 to 2.7% cobalt, which is able to be partially replaced by nickel, 0.3 to 0.7% beryllium, 0.01 to 0.5% zirconium, optionally 0.005 to 0.1% magnesium and/or iron and in some instances up to a maximum of 0.15% of at least one element from the group including niobium, tantalum, vanadium, hafnium, chromium, manganese, titanium and cerium. The remainder is copper and includes production-conditioned impurities and usual processing-additives. This copper alloy is used as the material for producing mold blocks for the side dams of continuous strip-casting installations. | 10-02-2008 |
20110056646 | METHOD FOR PRODUCING CAST MOLDED PARTS AS WELL AS CAST MOLDED PARTS PRODUCED ACCORDING TO THE METHOD - The invention relates to a method for the production of castings made of a copper alloy comprising silicon, nickel, chromium, and zirconium, and also inter-metal primary phases, wherein an ingot is drawn by means of hot forming in only one direction at a ratio of at least 4:1, wherein a casting surface of a casting produced from the drawn ingot, said surface coming into contact with a metal melt, is substantially selected perpendicular to the drawing direction of the ingot. A casting produced in this manner is characterized by high wear resistance and increased service life, particularly when used as a block of a side bank of a double strip casting system. | 03-10-2011 |
20110203831 | METAL/CNT AND/OR FULLERENE COMPOSITE COATING ON STRIP MATERIALS - A composite coating on metal strips or prestamped metal strips with an improved friction coefficient and/or good contact resistance and/or good friction corrosion resistance and/or good wear resistance and/or good formability includes carbon nanotubes and/or fullerenes and a metal. A method for producing a metal strip coated according to the invention with carbon nanotubes and/or fullerenes and a metal is also disclosed. | 08-25-2011 |
20110206946 | METHOD FOR PRODUCING A CARBON NANOTUBE-, FULLERENE- AND/OR GRAPHENE-CONTAINING COATING - A method for producing a carbon nanotube-, fullerene- and/or graphene-containing coating on a substrate includes the steps of applying carbon nanotubes, fullerenes and/or graphenes onto a tin-containing coating and introducing carbon nanotubes, fullerenes and/or graphenes into the coating by mechanical and/or thermal treatment. A coated substrate produced by this method and the use of the coated substrate as an electromechanical component or lead frame are also described. | 08-25-2011 |
20130004752 | METHOD FOR APPLYING CARBON/TIN MIXTURES TO METAL OR ALLOY LAYERS - The invention relates to a method for applying to a substrate a coating composition containing carbon in the form of carbon nanotubes, graphenes, fullerenes, or mixtures thereof and metal particles. The invention further relates to the coated substrate produced by the method according to the invention and to the use of the coated substrate as an electromechanical component. | 01-03-2013 |
20150251270 | ELECTRODE FOR ELECTRODE HOLDER - An electrode for an electrode holder includes an electrode shaft having a terminal welding cap which is detachably secured to a cap holder of the electrode shaft. The cap holder and the welding cap consist of a copper material. The copper material of the cap holder has a greater strength and/or hardness than the copper material of the welding cap. | 09-10-2015 |
Patent application number | Description | Published |
20100117111 | Optoelectronic Component and Method for the Manufacture of a Plurality of Optoelectronic Components - An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed. | 05-13-2010 |
20100171135 | Optoelectronic Semiconductor Body and Method for Producing the Same - The invention relates to an opto-electronic semiconductor body having a semiconductor layer sequence ( | 07-08-2010 |
20100230698 | Optoelectronic Semiconductor Body - An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate. | 09-16-2010 |
20110049555 | Optoelectronic Semiconductor Chip and Method for Producing Same - An optoelectronic semiconductor chip has a semiconductor layer sequence having an active layer that generates radiation between a layer of a first conductivity type and a layer of a second conductivity type. The layer of the first conductivity type is adjacent to a front side of the semiconductor layer sequence. The semiconductor layer sequence contains at least one cutout extending from a rear side, lying opposite the front side, of the semiconductor layer sequence through the active layer to the layer of the first conductivity type. The layer of the first conductivity type is electrically connected through the cutout by means of a first electrical connection layer which covers the rear side of the semiconductor layer sequence at least in places. | 03-03-2011 |
20110101390 | Monolithic, Optoelectronic Semiconductor Body and Method for the Production Thereof - An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced. | 05-05-2011 |
20110104836 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. | 05-05-2011 |
20110241031 | OPTOELECTRONIC PROJECTION DEVICE - An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer. | 10-06-2011 |
20110260205 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer. | 10-27-2011 |
20110272728 | Radiation-Emitting Semiconductor Chip - A radiation-emitting semiconductor chip ( | 11-10-2011 |
20120032306 | Method for Patterning a Semiconductor Surface, and Semiconductor Chip - A method for patterning a semiconductor surface is specified. A photoresist is applied to an outer area of a second semiconductor wafer. A surface of the photoresist that is remote from the second semiconductor wafer is patterned by impressing a patterned surface of the first wafer into the photoresist. A patterning method is applied to the surface of the photoresist, wherein a structure applied on the photoresist is transferred at least in places to the outer area of the second semiconductor wafer. | 02-09-2012 |
20120070927 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - A method for producing an optoelectronic semiconductor component includes providing a first wafer having a patterned surface, wherein the patterned surface is formed at least in places by elevations having first and second heights, wherein the first height is greater than the second height; providing a second wafer; applying a photoresist to outer areas of the second wafer; patterning a surface of the photoresist facing away from the second wafer by impressing the patterned surface of the first wafer into the photoresist, wherein the elevations are impressed as trenches having a first and second depth into the photoresist; applying a patterning method to the patterned surface of the photoresist, wherein the structure applied on the photoresist is transferred at least in places to the outer area of the second wafer. | 03-22-2012 |
20120086026 | Optoelectronic Semiconductor Body and Method for the Production Thereof - An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit. | 04-12-2012 |
20120299049 | Optoelectronic Semiconductor Chip and Method for Adapting a Contact Structure for Electrically Contacting an Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip has a first semiconductor functional region with a first terminal and a second terminal. A contact structure electrically contacts the optoelectronic semiconductor chip. The contact structure is connected electrically conductively to the first semiconductor functional region. The contact structure has a disconnectable conductor structure. An operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is not disconnected. This path is interrupted if the conductor structure is disconnected. Alternatively, an operating current path is established via the first terminal of the first semiconductor functional region and the second terminal if the conductor structure is disconnected. The conductor structure connects the first terminal to the second terminal and short circuits the first semiconductor functional region if the conductor structure is not disconnected. | 11-29-2012 |
20120322186 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence. | 12-20-2012 |
20130043496 | LIGHTING DEVICE - A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more. | 02-21-2013 |
20130134881 | LIGHT-EMITTING DIODE ARRANGEMENT AND LIGHT-EMITTING MEANS, IN PARTICULAR WITH SUCH A LIGHT-EMITTING DIODE ARRANGEMENT - A light-emitting diode arrangement includes a piezoelectric transformer having at least one output connection position, and a high-voltage light-emitting diode including a high-voltage light-emitting diode chip including at least two active regions connected in series with one another, wherein the high-voltage light-emitting diode is electrically connected to the output connection position of the piezo transformer. | 05-30-2013 |
20130193450 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME - An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure. | 08-01-2013 |
20130200432 | SEMICONDUCTOR COMPONENT, SUBSTRATE AND METHOD FOR PRODUCING A SEMICONDUCTOR LAYER SEQUENCE - A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner. | 08-08-2013 |
20130221369 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack consisting of a nitride compound semiconductor material on a carrier substrate, wherein the carrier substrate includes a surface containing silicon. The semiconductor layer stack includes a recess extending from a back of the semiconductor layer stack through an active layer to a layer of a first conductivity type. The layer of the first conductivity type connects electrically to a first electrical connection layer which covers at least a portion of the back through the recess. The layer of a second conductivity type connects electrically to a second electrical connection layer arranged at the back. | 08-29-2013 |
20130221392 | Optoelectronic Semiconductor Body and Method for Producing the Same - An optoelectronic semiconductor body includes a semiconductor layer sequence which has an active layer suitable for generating electromagnetic radiation, and a first and a second electrical connecting layer. The semiconductor body is provided for emitting electromagnetic radiation from a front side. The first and the second electrical connecting layer are arranged at a rear side opposite the front side and are electrically insulated from one another by means of a separating layer. The first electrical connecting layer, the second electrical connecting layer and the separating layer laterally overlap and a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side. Furthermore, a method for producing such an optoelectronic semiconductor body is specified. | 08-29-2013 |
20130228819 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip. | 09-05-2013 |
20140070246 | LIGHT-EMITTING SEMICONDUCTOR COMPONENT - The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body ( | 03-13-2014 |
20140145610 | LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER - A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter. | 05-29-2014 |
20140239253 | Optoelectronic Semiconductor Chip and Method for Producing the Latter - A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween. | 08-28-2014 |
20140319547 | METHOD OF PRODUCING A PLURALITY OF OPTOELECTRONIC SEMICONDUCTOR CHIPS, AND OPTOELECTRONIC SEMICONDUCTOR CHIP - A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence. | 10-30-2014 |
20140339577 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer. | 11-20-2014 |
20140339591 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back. | 11-20-2014 |
20150021636 | Optoelectronic Semiconductor Chip - An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region. | 01-22-2015 |
20150228858 | OPTOELECTRONIC COMPONENT WITH A LAYER STRUCTURE - An optoelectronic component includes a layer structure which has a first gallium nitride layer and an aluminum-containing nitride intermediate layer. In this case, the aluminum-containing nitride intermediate layer adjoins the first gallium nitride layer. The layer structure has an undoped second gallium nitride layer which adjoins the aluminum-containing nitride intermediate layer. | 08-13-2015 |
20150236070 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer. | 08-20-2015 |
20150279903 | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT - In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands ( | 10-01-2015 |