Richieri
Giovanni Richieri, Druento (to) IT
Patent application number | Description | Published |
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20080237608 | Molybdenum barrier metal for SiC Schottky diode and process of manufacture - A method for fabricating a diode is disclosed. In one embodiment, the method includes forming a Schottky contact on an epitaxial layer of silicon carbide (SiC) and annealing the Schottky contact at a temperature in the range of 300° C. to 700° C. The Schottky contact is formed of a layer of molybdenum. | 10-02-2008 |
Giovanni Richieri, Druento IT
Patent application number | Description | Published |
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20080230867 | Method of forming ohmic contact to a semiconductor body - A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal. | 09-25-2008 |
20140042459 | SILICON CARBIDE SCHOTTKY DIODE - A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H-SiC body. | 02-13-2014 |
Giovanni Richieri, Torino IT
Patent application number | Description | Published |
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20110278591 | POWER SEMICONDUCTOR SWITCH - A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof. | 11-17-2011 |