Patent application number | Description | Published |
20090215214 | Method of Sealing a Cavity - Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity. | 08-27-2009 |
20090275163 | System and Method of Encapsulation - Embodiments discussed herein generally include methods of fabricating MEMS devices within a structure. The MEMS device may be formed in a cavity above the structure, and additional metallization may occur above the MEMS device. The cavity may be formed by depositing an encapsulating layer over the sacrificial layers that enclose the MEMS device. The encapsulating layer may then be etched to expose portions of the sacrificial layers. The sacrificial layers are exposed because they extend through the sidewalls of the encapsulating layer. Therefore, no release holes are etched through the top of the encapsulating layer. An etchant then removes the sacrificial layers to free the MEMS device and form the cavity and an opening through the sidewall of the encapsulating layer. Another encapsulating layer may then be deposited to seal the cavity and the opening. | 11-05-2009 |
20110285035 | SEALED CAVITY - Embodiments disclosed herein generally include methods of sealing a cavity in a device structure. The cavity may be opened by etching away sacrificial material that may define the cavity volume. Material from below the cavity may be sputter etched and redeposited over and in passageways leading to the cavity to thereby seal the cavity. Material may be sputter etched from above the cavity and redeposited in the passageways leading to the cavity as well. The sputter etching may occur in a substantially inert atmosphere. As the sputter etching is a physical process, little or no sputter etched material will redeposit within the cavity itself. The inert gases may sweep out any residual gases that may be present in the cavity after the cavity has been opened. Thus, after the sputter etching, the cavity may be substantially filled with inert gases that do not negatively impact the cavity. | 11-24-2011 |
20120181638 | METHOD FOR MEMS DEVICE FABRICATION AND DEVICE FORMED - The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion. | 07-19-2012 |
20130032453 | ELIMINATION OF SILICON RESIDUES FROM MEMS CAVITY FLOOR - The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed. | 02-07-2013 |
20130299926 | METHOD FOR MEMS DEVICE FABRICATION AND DEVICE FORMED - The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion. | 11-14-2013 |
20140300249 | MEMS DEVICE ANCHORING - Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered. | 10-09-2014 |
Patent application number | Description | Published |
20090057276 | HYBRID SHIELD DEVICE FOR A PLASMA ARC TORCH - Methods and devices for controlling the flow of gases through a plasma arc torch are provided. A flow of plasma gas is directed to a plasma chamber, a first flow of auxiliary gas is directed around a plasma stream that exits a tip in one of a swirling manner and a radial manner, and a second flow of auxiliary gas is directed around the first flow of auxiliary gas and the plasma stream in one of a coaxial manner, an angled manner, and a radial manner. The first flow of auxiliary gas functions to constrict and shape the plasma stream to improve cut quality and cut speed, and the second flow of auxiliary gas functions to protect the plasma arc torch during piercing and cutting and to cool components of the plasma arc torch such that thicker workpieces may be processed with a highly shaped plasma stream. | 03-05-2009 |
20090057277 | DRAG TIP FOR A PLASMA CUTTING TORCH - A drag tip for use in a plasma cutting torch is provided that includes an inner tip portion defining a distal end face, an inner cavity through which a plasma gas flows, and an orifice disposed between the distal end face and the inner cavity. An outer tip portion surrounds the inner tip portion and defines an inner chamber to accommodate a flow of secondary gas and also a distal end portion. The distal end face of the inner tip portion is adapted for contact with a workpiece and extends distally beyond the distal end portion of the outer tip portion, and the flow of secondary gas exits the outer tip portion proximate the distal end portion. Variations of the drag tip and methods of operation are also provided. | 03-05-2009 |
20110168681 | HYBRID SHIELD DEVICE FOR A PLASMA ARC TORCH - A shield device for a plasma arc torch includes an inner shield member defining an inner auxiliary gas chamber and an outer shield member surrounding the inner shield member. An outer auxiliary gas chamber is defined between the inner shield member and outer shield member. The shield device allows an auxiliary gas flow to be split into a first flow of auxiliary gas through the inner auxiliary gas chamber and a second flow of auxiliary gas through the outer auxiliary gas chamber. The inner shield member and the outer shield member are configured to be mounted to the plasma arc torch as an integral unit. | 07-14-2011 |
20140144892 | HYBRID SHIELD DEVICE FOR A PLASMA ARC TORCH - A shield device for a plasma arc torch includes an inner shield member defining an inner auxiliary gas chamber and an outer shield member surrounding the inner shield member. An outer auxiliary gas chamber is defined between the inner shield member and outer shield member. The shield device allows an auxiliary gas flow to be split into a first flow of auxiliary gas through the inner auxiliary gas chamber and a second flow of auxiliary gas through the outer auxiliary gas chamber. The inner shield member and the outer shield member are configured to be mounted to the plasma arc torch as an integral unit. | 05-29-2014 |