Patent application number | Description | Published |
20110156712 | DEVICE AND METHOD FOR TESTING MAGNETIC SWITCHES AT WAFER-LEVEL STAGE OF MANUFACTURE - A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture. | 06-30-2011 |
20110210808 | SWITCH WITH INCREASED MAGNETIC SENSITIVITY - Switches that are actuated through exposure to a magnetic field are described. Such switches include conductive portions that are electrically separate from one another when in an open switch configuration. A mobile element of a switch includes one or more anchoring members that are in electrical contact with one of the conductive portions. The mobile element also has a beam that is attached to the one or more anchoring members. The beam can be attached to the one or more anchoring members by flexures. In some cases, the beam includes a plurality of strips. The beam has an end portion that is configured to move toward the other conductive portion when exposed to an external force, such as a magnetic field. When the mobile element electrically contacts the other conductive portion of the substrate, an electrical pathway is established between the conductive portions, giving rise to a closed switch configuration. Various configurations of anchoring members may significantly decrease initial upward beam deformation upon manufacture of the mobile element, resulting in an increased sensitivity upon exposure to a magnetic field. Methods for manufacturing switches that exhibit increased sensitivity to magnetic fields are also disclosed. Switches described can be formed using semiconductor manufacturing techniques. Methods described also include forming a beam that is attached to one or more anchoring members where an end portion of the beam moves in a substantially downward direction upon exposure to a magnetic field of sufficient intensity. | 09-01-2011 |
20120085748 | CLOSED LOOP TEMPERATURE CONTROLLED CIRCUIT TO IMPROVE DEVICE STABILITY - An integrated circuit is provided having an active circuit. A heating element is adjacent to the active circuit and configured to heat the active circuit. A temperature sensor is also adjacent to the active circuit and configured to measure a temperature of the active circuit. A temperature controller is coupled to the active circuit and configured to receive a temperature signal from the temperature sensor. The temperature controller operates the heating element to heat the active circuit to maintain the temperature of the active circuit in a selected temperature range. | 04-12-2012 |
20120139075 | THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler is configured to direct heat through channels of the cooler. The thermoelectric cooler has multiple electrodes and a first dielectric material positioned between side surfaces of the electrodes. A second dielectric material, different from the first dielectric material, is in contact with top surfaces of the electrodes. The first dielectric material extends above the top surface of the electrodes, separating portions of the second dielectric material, and is in contact with a portion of the top surfaces of the electrodes. The first dielectric material has a thermal conductivity different than a thermal conductivity of the second dielectric material. A ratio of the first dielectric material to the second dielectric material in contact with the top surface of the electrodes may be selected to control the heat retention. The semiconductor thermoelectric cooler may be manufactured using thin film technology. | 06-07-2012 |
20120139076 | THERMOELECTRIC COOLER SYSTEM, METHOD AND DEVICE - A semiconductor thermoelectric cooler includes P-type and N-type thermoelectric cooling elements. The P-type and N-type thermoelectric elements have a first portion having a first cross-sectional area and a second portion having a second cross-sectional area larger than the first cross-sectional area. The P-type and N-type thermoelectric cooling elements may, for example, be T-shaped or L-shaped. In another example, the thermoelectric cooling elements have a first surface having a first shape configured to couple to a first electrical conductor and a second surface opposite the first surface and having a second shape, different from the first shape, and configured to couple to a second electrical conductor. For example, the first surface may have a rectilinear shape of a first area and the second surface may have a rectilinear shape of a second area different from the first area. The semiconductor thermoelectric cooler may be manufactured using thin film technology. | 06-07-2012 |
20120153358 | INTEGRATED HEAT PILLAR FOR HOT REGION COOLING IN AN INTEGRATED CIRCUIT - The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient. | 06-21-2012 |
20120168754 | THIN FILM METAL-DIELECTRIC-METAL TRANSISTOR - A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device. | 07-05-2012 |
20130010826 | MICROSENSOR WITH INTEGRATED TEMPERATURE CONTROL - Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions within the microsensor. Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated. By carrying out the sensing near the calibration temperature, more accurate results can be obtained. In addition, the temperature of the sensing region can be controlled so that chemical reactions involving the analyte in the sensing region occur near their peak reaction rate. Carrying out the sensing near the peak reaction rate improves the sensitivity of the sensor which is important as sensor dimensions decrease and the magnitude of the generated signals decreases. | 01-10-2013 |
20130139587 | TUNABLE HUMIDITY SENSOR WITH INTEGRATED HEATER - A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes. | 06-06-2013 |
20130141834 | CAPACITANCE TRIMMING WITH AN INTEGRATED HEATER - The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater. | 06-06-2013 |
20130160518 | RELATIVE HUMIDITY SENSOR AND METHOD FOR CALIBRATION THEREOF - A device having an integrated circuit that includes a relative humidity sensor as well as a memory element for storing calibration information for the relative humidity sensor. Because of the nature of fabrication of an integrated circuit for a relative humidity sensor, variances in the creation of electronic components therein may lead to a need to calibrate the sensor after assembly. Such calibration information may be ascertained at the time of fabrication and stored in a memory component disposed on the integrated circuit chip. By storing the calibration information, which may be determined at the time of fabrication, one does not need to determine such calibration information later at assembly or store the already determined calibration information in a remote location until assembly if it was, in fact, ascertained at fabrication. Then, at assembly, one needs only to read the calibration information in order to calibrate the relative humidity sensor. | 06-27-2013 |
20130168815 | TEMPERATURE SWITCH WITH RESISTIVE SENSOR - The present disclosure is directed to a device and a method for forming a precision temperature sensor switch with a Wheatstone bridge configuration of four resistors and a comparator. When the temperature sensor detects a temperature above a threshold, the switch will change states. The four resistors in the Wheatstone bridge have the same resistance, with three of the resistors having a low temperature coefficient of resistance and the fourth resistor having a high temperature coefficient of resistance. As the temperature increases, the resistance of the fourth resistor will change. The change in resistance of the fourth resistor will change a voltage across the bridge. The voltage across the bridge is coupled to the comparator and compares the voltage with the threshold temperature, such that when the threshold temperature is exceeded, the comparator switches the output off. | 07-04-2013 |
20140252507 | SELF-SEALING MEMBRANE FOR MEMS DEVICES - Embodiments of the present disclosure are related to MEMS devices having a suspended membrane that are secured to and spaced apart from a substrate with a sealed cavity therebetween. The membrane includes openings with sidewalls that are closed by a dielectric material. In various embodiments, the cavity between the membrane and the substrate is formed by removing a sacrificial layer through the openings. In one or more embodiments, the openings in the membrane are closed by depositing the dielectric material on the sidewalls of the openings and the upper surface of the membrane. | 09-11-2014 |
20140291677 | INTEGRATED MULTI-SENSOR MODULE - A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed. Such a miniature integrated multi-sensor module that features low power consumption can be used in medical monitoring and mobile computing, including smart phone applications. | 10-02-2014 |
20140292317 | DURABLE MINIATURE GAS COMPOSITION DETECTOR HAVING FAST RESPONSE TIME - A miniature oxygen sensor makes use of paramagnetic properties of oxygen gas to provide a fast response time, low power consumption, improved accuracy and sensitivity, and superior durability. The miniature oxygen sensor disclosed maintains a sample of ambient air within a micro-channel formed in a semiconductor substrate. O | 10-02-2014 |
20140294046 | MICROELECTRONIC ENVIRONMENTAL SENSING MODULE - Sensors for air flow, temperature, pressure, and humidity are integrated onto a single semiconductor die within a miniaturized Venturi chamber to provide a microelectronic semiconductor-based environmental multi-sensor module that includes an air flow meter. One or more such multi-sensor modules can be used as building blocks in dedicated application-specific integrated circuits (ASICs) for use in environmental control appliances that rely on measurements of air flow. Furthermore, the sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. By integrating the Venturi chamber with accompanying environmental sensors, correction factors can be obtained and applied to compensate for temporal humidity fluctuations and spatial temperature variation using the Venturi apparatus. | 10-02-2014 |