Patent application number | Description | Published |
20080233517 | Negative Resists Based on Acid-Catalyzed Elimination of Polar Molecules - The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents. | 09-25-2008 |
20080286467 | METHOD OF USE FOR PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS - A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation. | 11-20-2008 |
20090011377 | PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS - A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas T | 01-08-2009 |
20090081418 | SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES - The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R | 03-26-2009 |
20090081579 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081585 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081597 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090081598 | FUNCTIONALIZED CARBOSILANE POLYMERS AND PHOTORESIST COMPOSITIONS CONTAINING THE SAME - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 03-26-2009 |
20090212016 | Aligning polymer films - A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate. | 08-27-2009 |
20090214823 | METHODS FOR ALIGNING POLYMER FILMS AND RELATED STRUCTURES - Methods and a structure. The method includes applying a solution including two or more immiscible polymers to a substructure including features having at least one sidewall and a bottom surface. The immiscible polymers include a first polymer and a second polymer. The at least one sidewall includes a material. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. One or more immiscible polymers is selectively removed. At least one immiscible polymer remains, resulting in forming structures including the substructure and the immiscible polymer remaining. Two additional methods and a structure are also included. | 08-27-2009 |
20090233226 | PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE - Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described. | 09-17-2009 |
20090291389 | PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE - A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C. | 11-26-2009 |
20100062368 | LOW OUTGASSING PHOTORESIST COMPOSITIONS - Polymers for use in photoresist compositions include a repeat unit having a formula of: | 03-11-2010 |
20100207276 | SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES - The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R | 08-19-2010 |
20100216899 | POLYAMIDE MEMBRANES WITH FLUOROALCOHOL FUNCTIONALITY - A polymeric membrane includes an active layer on a support. The active layer includes a polymer with a backbone, and the backbone has attached thereto at least one fluoroalcohol moiety. | 08-26-2010 |
20100216967 | INTERFACIAL POLYMERIZATION METHODS FOR MAKING FLUOROALCOHOL-CONTAINING POLYAMIDES - A method including reacting a chemical mixture (A) and a chemical mixture (B) to form a polymeric compound, wherein where (A) and (B) are immiscible with each other, and wherein: | 08-26-2010 |
20110008727 | Low Activation Energy Photoresist Composition and Process for Its Use - The present invention relates to a radiation sensitive photoresist composition. The composition comprises a polymer comprising at least two monomers. The first monomer has an acid cleavable tertiary ester group. The second monomer is an acidic monomer. The acid cleavable ester group of the polymer has a surprisingly low activation energy which results in improved resist images in lithographic processes. | 01-13-2011 |
20110045387 | Method of Forming a Relief Pattern by E-Beam Lithography Using Chemical Amplification, and Derived Articles - A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula ( | 02-24-2011 |
20110045407 | Functionalized Carbosilane Polymers and Photoresist Compositions Containing the Same - Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm | 02-24-2011 |
20110048787 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS AND FORMULATIONS AND METHODS OF USE - Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers. | 03-03-2011 |
20110079579 | PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS - Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules. | 04-07-2011 |
20110083887 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 04-14-2011 |
20110120940 | POLYMERIC FILMS MADE FROM POLYHEDRAL OLIGOMERIC SILSESQUIOXANE (POSS) AND A HYDROPHILIC COMONOMER - A composite membrane includes a filtration membrane and a layer on a surface of the filtration membrane. The layer includes a polymer including a polyhedral oligomeric silsesquioxane (POSS) derivative with a hydrophilic moiety attached to at least one vertex thereof. A method for making a composite membrane includes applying to a surface of a filtration membrane a photopolymerizable composition including a POSS compound, a hydrophilic comonomer, and a photoinitiator. The composition is cured to form a hydrophilic layer on the filtration membrane. | 05-26-2011 |
20110120941 | COMPOSITE MEMBRANES WITH PERFORMANCE ENHANCING LAYERS - A composite membrane includes a filtration membrane with a surface; and a layer on the surface of the filtration membrane. The layer includes a polymer including a poly(ethylene glycol) moiety cross-linked with an ammonium salt or a precursor of an ammonium salt | 05-26-2011 |
20110136928 | POLY-OXYCARBOSILANE COMPOSITIONS FOR USE IN IMPRINT LITHOGRAPHY - The present invention relates to compositions comprising poly-oxycarbosilane and methods for using the compositions in step and flash imprint lithography. The imprinting compositions comprise a poly-oxycarbosilane polymer, a silanol, a reaction initiator and optionally a pore generator. | 06-09-2011 |
20110256713 | POLYHEDRAL OLIGOMERIC SILSESQUIOXANE BASED IMPRINT MATERIALS AND IMPRINT PROCESS USING POLYHEDRAL OLIGOMERIC SILSESQUIOXANE BASED IMPRINT MATERIALS - A method of forming low dielectric contrast structures by imprinting a silsesquioxane based polymerizable composition. The imprinting composition including: one or more polyhedral silsesquioxane oligomers each having one or more polymerizable groups, wherein each of the one or more polymerizable group is bound to a different silicon atom of the one or more polyhedral silsesquioxane oligomers; and | 10-20-2011 |
20110304053 | INTERCONNECT STRUCTURE AND METHOD OF FABRICATING - An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material. | 12-15-2011 |
20120012527 | COMPOSITE MEMBRANE WITH MULTI-LAYERED ACTIVE LAYER - A polymeric membrane includes an active layer on a support. The active layer includes at least two chemically distinct crosslinked, polyamide films, and the films are crosslinked with each other at an interface. | 01-19-2012 |
20120135146 | METHODS OF FORMING TOPOGRAPHICAL FEATURES USING SEGREGATING POLYMER MIXTURES - Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain. | 05-31-2012 |
20120156611 | Fluoroalcohol Containing Molecular Photoresist Materials and Processes of Use - Phenolic molecular glasses such as calixarenes include at least one fluoroalcohol containing unit. The fluoroalcohol containing molecular glasses can be used in photoresist compositions. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition. | 06-21-2012 |
20120241373 | COMPOSITE MEMBRANES AND METHODS OF PREPARATION THEREOF - A polymeric membrane includes an active layer over a support, wherein the active layer includes at least two chemically distinct polyamide films. A first one of the films is in contact with the support, and a second one of the films is not in contact with the support. The second polyamide film is crosslinked with the first polyamide film at an interface therewith, and the second polyamide film includes a structure having a side chain group including an ammonium salt. | 09-27-2012 |
20130001153 | THIN FILM COMPOSITE MEMBRANES EMBEDDED WITH MOLECULAR CAGE COMPOUNDS - A polymeric membrane on a support, wherein the polymeric membrane includes a crosslinked polymer covalently bound to a molecular cage compound. An interfacial polymerization method for making the polymeric membrane is also disclosed. | 01-03-2013 |
20130009323 | INTERCONNECT STRUCTURE AND METHOD OF FABRICATING - An interconnect structure is provided which comprises a semiconductor substrate; a patterned and cured photoresist wherein the photoresist contains a low k dielectric substitutent and contains a fortification layer on its top and sidewall surfaces forming vias or trenches; and a conductive fill material in the vias or trenches. Also provided is a method for fabricating an interconnect structure which comprises depositing a photoresist onto a semiconductor substrate, wherein the photoresist contains a low k dielectric constituent; imagewise exposing the photoresist to actinic radiation; then forming a pattern of vias or trenches in the photoresist; surface fortifying the pattern of vias or trenches proving a fortification layer on the top and sidewalls of the vias or trenches; curing the pattern of vias or trenches thereby converting the photoresist into a dielectric; and filling the vias and trenches with a conductive fill material. | 01-10-2013 |
20130125787 | PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS - Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules. | 05-23-2013 |
20130189836 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 07-25-2013 |
20130197253 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 08-01-2013 |
20130207278 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 08-15-2013 |
20130209922 | CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - A polymer comprising recurring units having an acid-eliminatable group on a side chain and aromatic ring-bearing cyclic olefin units is used to formulate a chemically amplified negative resist composition. Any size shift between the irradiated pattern and the formed resist which can arise in forming a pattern including isolated feature and isolated space portions is reduced, and a high resolution is obtained. | 08-15-2013 |
20130292163 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS AND FORMULATIONS AND METHODS OF USE - Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers. | 11-07-2013 |
20130344441 | ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION - Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH. | 12-26-2013 |
20140038104 | WATER-DISPERSIBLE ELECTRICALLY CONDUCTIVE FLUORINE-CONTAINING POLYANILINE COMPOSITIONS FOR LITHOGRAPHY - A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol % to about 15 mol % of a fluorine-containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm. | 02-06-2014 |
20140186774 | ACID-STRIPPABLE SILICON-CONTAINING ANTIREFLECTIVE COATING - A silicon-containing antireflective coating formulation comprising: (i) an aqueous base insoluble organosilicon component having a multiplicity of hydrocarbon groups derivatized with hydroxy groups in the absence of Si—O—C and Si—O—H moieties; (ii) a vinylether component having a multiplicity of vinylether groups; and (iii) a casting solvent. Also disclosed is a method for converting the silicon-containing antireflective coating formulation into a crosslinked silicon-containing antireflective film comprising organosilicon units interconnected by acetal or ketal groups. The method entails (a) coating a substrate with the silicon-containing antireflective coating formulation and (b) heating the coated substrate to a temperature at which crosslinking between the organosilicon silicon component and vinylether component occurs. Further disclosed is a method for patterning an antireflective coating on a substrate using the crosslinked silicon-containing antireflective film in a lithographic patterning process wherein the crosslinked silicon-containing antireflective film is situated between the substrate and a photoresist. | 07-03-2014 |
20140217014 | COMPOSITE FILTRATION MEMBRANES AND METHODS OF PREPARATION THEREOF - A method comprises disposing, on a porous support membrane, an aqueous mixture comprising a crosslinkable polymer comprising a poly(meth)acrylate and/or poly(meth)acrylamide backbone, thereby forming an initial film layer, wherein the crosslinkable polymer comprises a side chain nucleophilic amine group capable of interfacially reacting with a multi-functional acid halide crosslinking agent to form a crosslinked polymer; contacting the initial film layer with a mixture comprising i) the multi-functional acid halide crosslinking agent, ii) an optional accelerator, and iii) an organic solvent, the organic solvent being a non-solvent for the crosslinkable polymer; and allowing the crosslinkable polymer to interfacially react with the crosslinking agent, thereby forming a composite filtration membrane comprising an anti-fouling selective layer comprising the crosslinked polymer. | 08-07-2014 |
20140353253 | COMPOSITE MEMBRANE WITH MULTI-LAYERED ACTIVE LAYER - A polymeric membrane includes an active layer on a support. The active layer includes at least two chemically distinct crosslinked, polyamide films, and the films are crosslinked with each other at an interface. | 12-04-2014 |
20150021262 | THIN FILM COMPOSITE MEMBRANES EMBEDDED WITH MOLECULAR CAGE COMPOUNDS - A polymeric membrane on a support, wherein the polymeric membrane includes a crosslinked polymer covalently bound to a molecular cage compound. An interfacial polymerization method for making the polymeric membrane is also disclosed. | 01-22-2015 |