Patent application number | Description | Published |
20090243074 | SEMICONDUCTOR THROUGH SILICON VIAS OF VARIABLE SIZE AND METHOD OF FORMATION - A through-silicon via structure is formed by providing a substrate having a first conductive catch pad and a second conductive catch pad formed thereon. The substrate is secured to a wafer carrier. A first etch of a first type is performed on the substrate underlying each of the first and second conductive catch pads to form a first partial through-substrate via of a first diameter underlying the first conductive catch pad and a second partial through-substrate via underlying the second conductive catch pad of a second diameter that differs from the first diameter. A second etch of a second type that differs from the first type is performed to continue etching the first partial through-substrate to form equal depth first and second through-substrate vias respectively to the first and second conductive catch pads. | 10-01-2009 |
20100105168 | MICROELECRONIC ASSEMBLY AND METHOD FOR FORMING THE SAME - A microelectronic assembly and a method for forming a microelectronic assembly are provided. First and second substrates ( | 04-29-2010 |
20100127345 | 3-D CIRCUITS WITH INTEGRATED PASSIVE DEVICES | 05-27-2010 |
20100127394 | THROUGH SUBSTRATE VIAS FOR BACK-SIDE INTERCONNECTIONS ON VERY THIN SEMICONDUCTOR WAFERS - Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming ( | 05-27-2010 |
20100264548 | THROUGH SUBSTRATE VIAS - Through substrate vias (TSVs) are provided after substantially all high temperature operations needed to form a device region ( | 10-21-2010 |
20110156266 | METHODS FOR FORMING THROUGH-SUBSTRATE CONDUCTOR FILLED VIAS, AND ELECTRONIC ASSEMBLIES FORMED USING SUCH METHODS - Through substrate vias for back-side electrical and thermal interconnections on very thin semiconductor wafers without loss of wafer mechanical strength during manufacturing are provided by: forming desired device regions with contacts on the front surface of an initially relatively thick wafer; etching via cavities partly through the wafer in the desired locations; filling the via cavities with a conductive material coupled to some device region contacts; mounting the wafer with its front side facing a support structure; thinning the wafer from the back side to expose internal ends of the conductive material filled vias; applying any desired back-side interconnect region coupled to the exposed ends of the filled vias; removing the support structure and separating the individual device or IC assemblies so as to be available for mounting on a further circuit board, tape or larger circuit. | 06-30-2011 |
20110272823 | THROUGH SUBSTRATE VIAS - Through substrate vias (TSVs) are provided after substantially all high temperature operations needed to form a device region of a first thickness proximate the front surface of a substrate wafer by: (i) from the front surface, forming comparatively shallow vias of a first aspect ratio containing first conductors extending preferably through the first thickness but not through the initial wafer thickness, (ii) removing material from the rear surface to form a modified wafer of smaller final thickness with a new rear surface, and (iii) forming from the new rear surface, much deeper vias of second aspect ratios beneath the device region with second conductors therein contacting the first conductors, thereby providing front-to-back interconnections without substantially impacting wafer robustness during manufacturing and device region area. Both aspect ratios are desirably about ≦40, usefully ≦10 and preferably ≦5. | 11-10-2011 |
Patent application number | Description | Published |
20140031075 | Multiple Network Mode Selection Devices - Systems and methods for multiple network mode selection devices in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a multiple network mode selection device includes a processor, a radio module connected to the processor, and network determination process storage connected to the processor and configured to store one or more network determination processes, wherein the processor is configured to connect to a first network using the radio module, execute a network determination process selected from the one or more network determination process, reprogram the radio module in response to the executed network determination process, and connect to a second network using the radio module, where the second network is separate from the first network. | 01-30-2014 |
20140295870 | Remotely Managed Data Radios Including Remote Management Capabilities - Systems and methods for remotely managed data radios in accordance with embodiments of the invention are illustrated. In one embodiment of the invention, a remotely managed data radio includes first and second data radio modules, wherein the first data radio module configured to communicate on a first network including an amount of bandwidth and a latency for a given frequency channel, wherein the second data radio module is configured to communicate on a second network, and wherein the remotely managed data radio is configured to communicate mission-critical data utilizing the first data radio module, measure the performance of the first network using the first data radio module, generate non-mission-critical data using the second data radio module, where the non-mission-critical data includes the measured performance data, and communicate the non-mission-critical data utilizing the second data radio module, thereby preserving the bandwidth and latency of the primary network for communicating mission-critical data. | 10-02-2014 |