Patent application number | Description | Published |
20080218740 | Nanowire-based photonic devices - Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity. | 09-11-2008 |
20080224131 | Compound, a molecular switch employing the compound and a method of electronic switching - Classes of molecules are disclosed which can, for example, be used in molecular switches. The classes of molecules include at least three segments—an electronic donor (“D”), a switchable bridge (“B”), and an electronic acceptor (“A”)—chemically connected and linearly arranged (e.g., D-B-A). The electronic donor can be an aromatic ring system with at least one electron donating group covalently attached; an aromatic ring system with an electron withdrawing group covalently attached is usually employed as the electronic acceptor; and the switchable bridge can be a pi system that can be switched on or off using an external electric field. | 09-18-2008 |
20080237568 | Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures - Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure. | 10-02-2008 |
20080237886 | Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions - Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array. | 10-02-2008 |
20080246106 | Integrated circuits having photonic interconnect layers and methods for fabricating same - Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer. | 10-09-2008 |
20080270042 | Surface enhanced raman spectroscopy with periodically deformed sers-active structure - An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement. | 10-30-2008 |
20090097798 | Plasmonic high-speed devices for enhancing the performance of microelectronic devices - Various embodiments of the present invention are directed to photonic devices that can be used to collect and convert incident ER into surface plasmons that can be used to enhance the operation of microelectronic devices. In one embodiment of the present invention, a photonic device comprises a dielectric layer having a top surface and a bottom surface, and a planar nanowire network covering at least a portion of the top surface of the dielectric layer. The bottom surface of the dielectric layer is positioned on the top surface of a substrate, and the planar nanowire network is configured to convert incident electromagnetic radiation into surface plasmons that penetrate through the dielectric layer and into at least a portion of the substrate. | 04-16-2009 |
20090109516 | Modulation of electromagnetic radiation with electrically controllable composite material - An apparatus and related methods for modulating an electromagnetic radiation beam are described. A composite material is positioned in the path of the radiation beam, the composite material comprising a plurality of commonly oriented metallic first lines spaced apart by less than a wavelength of the radiation beam and a plurality of commonly oriented metallic second lines also spaced apart by less than that wavelength. The second lines are positioned in a crossing arrangement with the first lines, a crosspoint location being defined where each first line crosses each second line. An electrically programmable impedance memory element is positioned at each crosspoint location and is electrically coupled between the first and second lines corresponding to that crosspoint location, each impedance memory element having an electrically programmed state. The composite material modulates the radiation beam according to the electrically programmed states of the impedance memory elements. | 04-30-2009 |
20090109828 | Optical System With Superlens - An optical system includes an optical recording medium configured to store data and a light device configured to emit a beam of light to write the data to the optical recording medium or read the data from the optical recording medium. The optical system also includes a superlens positioned between the optical recording medium and the light device. The superlens is configured to focus the beam of light emitted from the light device to create a focused beam of light on the optical recording medium. | 04-30-2009 |
20090110406 | Dynamic optical signal tracking on a detector array in a free space optical communication system - A free-space optical communication system includes a detector array having a plurality of detector elements and a transmitting source. Dynamic movement of the optical signal on the detector array is caused by changes in orientation of the transmitting source. A tracker tracks the movement of the optical signal in real-time on the detector array. An output signal is derived from at least one of the detector elements illuminated by the optical signal. | 04-30-2009 |
20090159567 | POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE - An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern. | 06-25-2009 |
20090188544 | Nanowire-Based Device And Array With Coaxial Electrodes - A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes. | 07-30-2009 |
20090188557 | Photonic Device And Method Of Making Same Using Nanowire Bramble Layer - A photonic device and a method of making the device employ a bramble layer of nanowires having an uneven contour. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a bramble layer of nanowires formed on the first layer. The photonic device and the method further include a second layer provided on the bramble layer. The nanowires have first ends integral to crystallites in the microcrystalline first layer and second ends opposite to the first ends. Different angular orientations of the nanowires provide the uneven contour of the bramble layer. The second layer has an uneven surface corresponding to the uneven contour of the bramble layer. | 07-30-2009 |
20090189145 | Photodetectors, Photovoltaic Devices And Methods Of Making The Same - A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires. | 07-30-2009 |
20090274874 | Photonic Device And Method For Forming Nano-Structures - A photonic device includes a substrate and at least one molecularly assembled or atomic layer deposited nano-structure defined on the substrate. The nano-structure has a controlled resolution less than or equal to 100 nm. | 11-05-2009 |
20100003462 | Structure Including A Graphene Layer And Method For Forming The Same - A method for forming a graphene layer is disclosed herein. The method includes establishing an insulating layer on a substrate such that at least one seed region, which exposes a surface of the substrate, is formed. A seed material in the seed region is exposed to a carbon-containing precursor gas, thereby initiating nucleation of the graphene layer on the seed material and enabling lateral growth of the graphene layer along at least a portion of a surface of the insulating layer. | 01-07-2010 |
20100081238 | MIXED-SCALE ELECTRONIC INTERFACE - Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. A method is provided for fabricating a nanoscale/microscale interface having a microscale layer and a predominantly nanoscale layer. | 04-01-2010 |
20100091662 | Defect-tolerant demultiplexers based on threshold logic - Embodiments of the present invention include defect-tolerant demultiplexer crossbars that employ, or that can be modeled by demultiplexer crossbars that employ, threshold logic “TL” elements. The threshold-logic elements provide for tolerance for signal variation on internal signals lines of a defect-tolerant demultiplexer crossbar, and thus tolerance for defects which produce internal signal variation. | 04-15-2010 |
20100094580 | Method and system for device reconfiguration for defect amelioration - Embodiments of the present invention are directed to cost-effective defect amelioration in manufactured electronic devices that include nanoscale components. Certain embodiments of the present invention are directed to amelioration of defects in electronic devices that contain nanoscale demultiplexers. In certain embodiments of the present invention, the nanoscale-demultiplexer-containing devices include reconfigurable encoders. In one embodiment of the present invention, the table of codes within a reconfigurable encoder is permuted, and a device is configured in accordance with the permuted codes, in order to produce a permuted table of codes that, when input to an appropriately configured nanoscale demultiplexer, produces correct outputs despite defects in the nanoscale demultiplexer. | 04-15-2010 |
20100293518 | Nanoscale interconnection interface - One embodiment of the present invention provides a demultiplexer implemented as a nanowire crossbar or a hybrid nanowire/microscale-signal-line crossbar with resistor-like nanowire junctions. The demultiplexer of one embodiment provides demultiplexing of signals input on k microscale address lines to 2 | 11-18-2010 |
20100321880 | MODULAR DATA PROCESSING COMPONENTS AND SYSTEMS - Data processing modules including a housing and optical interfaces associated with the exterior of the housing, and systems including the same. | 12-23-2010 |
20110013913 | IMAGE-ROTATION PRISMS AND OPTICAL INTERCONNECTS EMPLOYING THE SAME - Embodiments of the present invention relate to a family of image-rotation prisms. Each image-rotation prism has the property that as an image-rotation prism is rotated, an image passing through the image-rotation prism rotates at twice the angular rate of the image-rotation prism. Embodiments of the present invention include optical systems that can be used for board-to-board communications and employ the image-rotation prisms to compensate for arbitrary axial rotations and misalignment of optical signals and can be used to direct optical signals output from transmitters on one board to particular detectors of a detector arrangement located on an adjacent board. | 01-20-2011 |
20110024714 | Nanoscale Three-Terminal Switching Device - A nanoscale three-terminal switching device has a bottom electrode, a top electrode, and a side electrode, each of which may be a nanowire. The top electrode extends at an angle with respect to the bottom electrode and has an end section going over and overlapping the bottom electrode. An active region is disposed between the top electrode and bottom electrode and contains a switching material. The side electrode is disposed opposite from the top electrode and in electrical contact with the active region. A self-aligned fabrication process may be used to automatically align the formation of the top and side electrodes with respect to the bottom electrode. | 02-03-2011 |
20110057683 | DEFECT-AND-FAILURE-TOLERANT DEMULTIPLEXER USING SERIES REPLICATION AND ERROR-CONTROL ENCODING - One embodiment of the present invention is a method for constructing defect-and-failure-tolerant demultiplexers. This method is applicable to nanoscale, microscale, or larger-scale demultiplexer circuits. Demultiplexer circuits can be viewed as a set of AND gates, each including a reversibly switchable interconnection between a number of address lines, or address-line-derived signal lines, and an output signal line. Each reversibly switchable interconnection includes one or more reversibly switchable elements. In certain demultiplexer embodiments, NMOS and/or PMOS transistors are employed as reversibly switchable elements. In the method that represents one embodiment of the present invention, two or more serially connected transistors are employed in each reversibly switchable interconnection, so that short defects in up to one less than the number of serially interconnected transistors does not lead to failure of the reversibly switchable interconnection. In addition, error-control-encoding techniques are used to introduce additional address-line-derived signal lines and additional switchable interconnections so that the demultiplexer may function even when a number of individual, switchable interconnections are open-defective. | 03-10-2011 |
20110168256 | Photonic Device And Method Of Making Same Using Nanowires - A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer. | 07-14-2011 |
20110169052 | MEMFET RAM - A non-volatile field-effect device. The non-volatile field-effect device includes a source, a drain, a channel-formation portion and a memristive gate. The channel-formation portion is disposed between and coupled with the source and the drain. The memristive gate is disposed over the channel-formation portion and coupled with the channel-formation portion. The memristive gate includes a plurality of mobile ions and a confinement structure for the plurality of mobile ions. Moreover, the memristive gate is configured to switch the channel-formation portion from a first conductivity state to a second conductivity state in response to migration of the plurality of mobile ions within the confinement structure. | 07-14-2011 |
20110181352 | Electrically Actuated Devices - An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two dopants are present in a spatially varying region of the active region prior to device actuation. The at least two dopants have opposite conductivity types and different mobilities. | 07-28-2011 |
20110182108 | Memristive Device and Methods of Making and Using the Same - A memristive device is disclosed herein. The device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two mobile species are present in the active region. Each of the at least two mobile species is configured to define a separate state variable of the memristive device. | 07-28-2011 |
20110228592 | Programmable Bipolar Electronic Device - A configurable memristive device ( | 09-22-2011 |
20110240946 | Graphene Memristor Having Modulated Graphene Interlayer Conduction - A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field. | 10-06-2011 |
20110240947 | Defective Graphene-Based Memristor - A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer. | 10-06-2011 |
20110240951 | MEMRISTIVE DEVICE - A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode. | 10-06-2011 |
20110240952 | PROGRAMMABLE CROSSPOINT DEVICE WITH AN INTEGRAL DIODE - A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided. | 10-06-2011 |
20110249594 | DETERMINING NODE LOCATION IN A WIRELESS NETWORK - Transmitting nodes broadcast chirped signals on a wireless network. The transmitting nodes are time-synchronized with each other and location of the transmitting nodes is known. A receiver node detects beat frequencies created by pairs of chirped signals from different pairs of transmitting nodes. Time delay differences between chirped signals in respective beat frequency pairs are determined. The receiver node's location is determined in view of the time delay differences. | 10-13-2011 |
20110266513 | Superconductor Memristor Devices - Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device ( | 11-03-2011 |
20110267220 | SENSOR NODE POSITIONING IN A SENSOR NETWORK - Systems and methods for positioning sensor nodes in a sensor network are described. A system can include multiple base nodes. The base nodes can have a differential global positioning system. The global positioning system can be used to determine a precise location of the base nodes. Sensor nodes can be placed in locations with respect to the plurality of base nodes using measurement data from at least one of the base nodes. A positional device can provide the position measurement data relative to the base nodes to a user for use in placing the plurality of sensor nodes. A communications system enables electronic communication between the base nodes and the sensor nodes. | 11-03-2011 |
20110267607 | ENHANCING SIGNALS IN SURFACE ENHANCED RAMAN SPECTROSCOPY (SERS) - An integrated device for enhancing signals in Surface Enhanced Raman Spectroscopy (SERS). The integrated device comprising an array of nanostructures comprising a material, wherein the material is configured to allow light to pass through. The integrated device also comprising SERS active nanoparticles disposed on at least portion of the array of nanostructures and a mirror integrated below a base of the array of nanostructures. The mirror is configured to reflect light passing through the material into the array of nanostructures. | 11-03-2011 |
20110267608 | TUNABLE APPARATUS FOR PERFORMING SERS - A tunable apparatus for performing Surface Enhanced Raman Spectroscopy (SERS) includes a deformable layer and a plurality of SERS-active nanoparticles disposed at one or more locations on the deformable layer, wherein the one or more locations are configured to be illuminated with light of a pump wavelength to cause Raman excitation light to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles. In addition, a morphology of the deformable layer is configured to be controllably varied to modify an intensity of the Raman scattered light produced from the molecules. | 11-03-2011 |
20110267610 | COMPACT SENSOR SYSTEM - A compact sensor system comprising: an analysis cell configured for photon-matter interaction, where photons are received from a light source; and an integrated-optical spectral analyzer configured for identifying a set of frequencies, the integrated-optical spectral analyzer comprising: a waveguide coupled with the analysis cell, the waveguide configured for propagating a set of frequencies through the waveguide; one or more ring resonators coupled with the waveguide, the one or more ring resonators comprising a predetermined bandwidth and configured for capturing the set of frequencies corresponding to frequencies within the predetermined bandwidth; and one or more frequency detectors coupled with the one or more tunable ring resonators, the one or more frequency detectors configured for generating electrical signals that identify each of the set of frequencies. | 11-03-2011 |
20110267611 | SCATTERING SPECTROSCOPY APPARATUS AND METHOD EMPLOYING A GUIDED MODE RESONANCE (GMR) GRATING - A scattering spectroscopy apparatus, system and method employ guided mode resonance (GMR) and a GMR grating. The apparatus includes a GMR grating having a subwavelength grating, and an optical detector configured to receive a portion of a scattered signal produced by an interaction between an excitation signal and an analyte associated with a surface of the GMR grating. A propagation direction of the received portion of the scattered signal is substantially different from a propagation direction of a GMR-coupled portion of the excitation signal within the GMR grating. The system includes the apparatus and an optical source. The method includes exciting a GMR in a GMR grating, interacting a GMR-coupled portion of the excitation signal with an analyte to produce a scattered signal and detecting a portion of the scattered signal. | 11-03-2011 |
20110309321 | MEMRISTORS WITH A SWITCHING LAYER COMPRISING A COMPOSITE OF MULTIPLE PHASES - A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed. | 12-22-2011 |
20120001143 | Switchable Junction with Intrinsic Diode - A switchable junction ( | 01-05-2012 |
20120005418 | Hierarchical On-chip Memory - A hierarchical on-chip memory ( | 01-05-2012 |
20120007038 | Reconfigurable Multilayer Circuit - A reconfigurable multilayer circuit ( | 01-12-2012 |
20120012809 | Switchable Junction with Intrinsic Diodes with Different Switching Threshold - A switchable junction ( | 01-19-2012 |
20120012810 | OPTOELECTRONIC LIGHT EXPOSURE MEMORY - An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer. | 01-19-2012 |
20120014170 | Capacitive Crossbar Arrays - A capacitive crossbar array ( | 01-19-2012 |
20120018698 | LOW-POWER NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL - A nanoscale switching device exhibits multiple desired properties including a low switching current level, being electroforming-free, and cycling endurance. The switching device has an active region disposed between two electrodes. The active region contains a switching material capable of transporting dopants under an electric field. The switching material is in an amorphous state and formed by deposition at or below room temperature. | 01-26-2012 |
20120025343 | THERMOELECTRIC DEVICE HAVING A VARIABLE CROSS-SECTION CONNECTING STRUCTURE - A thermoelectric device having a variable cross-section connecting structure includes a first electrode, a second electrode, and a connecting structure connecting the first electrode and the second electrode. The connecting structure has a first section and a second section. The width of the second section is greater than the width of the first section, and the width of the first section is less than a width that is approximately equivalent to a phonon mean free path through the first section. | 02-02-2012 |
20120026776 | MEMORY RESISTOR HAVING PLURAL DIFFERENT ACTIVE MATERIALS - Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events. | 02-02-2012 |
20120027251 | DEVICE WITH MARKINGS FOR CONFIGURATION - A device including a network interface is marked for determination of the position or orientation of the device. In particular, the markings can include a pattern and proportions that enable determination of at least one of a position and an orientation of the device relative to a station using appearance of the markings as observed from the station. | 02-02-2012 |
20120039114 | Memcapacitor - A memcapacitor device ( | 02-16-2012 |
20120092770 | NON-PERIODIC GRATINGS FOR SHAPING REFLECTED AND TRANSMITTED LIGHT IRRADIANCE PROFILES - Embodiments of the present invention are directed to planar sub-wavelength dielectric gratings that can be configured to control the beam profile of reflected and transmitted light. In one embodiment, a grating ( | 04-19-2012 |
20120113706 | MEMRISTORS BASED ON MIXED-METAL-VALENCE COMPOUNDS - A memristor ( | 05-10-2012 |
20120122394 | SENSOR NODES WITH FREE-SPACE SIGNALING - Apparatus and systems are provided for data signaling between a centralized transceiver and a plurality of sensor nodes. Each sensor node independently generates electrical power from one or more renewable sources. Each sensor node transmits data corresponding to sensed physical variables to the transceiver by free-space signaling. Large areas can be monitored by a vast array of such sensors without the need for wiring, optical fibers or other tangible interconnections. | 05-17-2012 |
20120154791 | SURFACE ENHANCED RAMAN SPECTROSCOPY SYSTEM - A surface enhanced Raman spectroscopy system includes a surface enhanced Raman spectroscopy substrate and a laser source configured to emit light within a spectrum of wavelengths toward a predetermined species on or near the surface enhanced Raman spectroscopy substrate. The system further includes a set of filters positioned to be in optical communication with light scattered after the laser light interacts with the predetermined species. Each of the filters in the set is respectively configured to pass scattered light within a different predetermined narrow band of wavelengths. The system also includes a plurality of photodetectors, where each photodetector is positioned adjacent to a respective one of the filters in the set and is configured to output a signal if the scattered light passes through the respective one of the filters. The set of filters is targeted for detection of characteristic peaks of the predetermined species. | 06-21-2012 |
20120154880 | OPTICAL MODULATORS - Various embodiments of the present invention are directed to external, electronically controllable modulators. In one embodiment, a modulating device ( | 06-21-2012 |
20120195099 | CHANGING A MEMRISTOR STATE - A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state. | 08-02-2012 |
20120228500 | ELECTROMAGNETIC WAVE RECEIVING ANTENNA - An electromagnetic wave receiving antenna includes a spiral element configured to selectively attenuate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths, and to concentrate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths other than the attenuated wavelengths. | 09-13-2012 |
20120275211 | Reconfigurable Crossbar Memory Array - A two-dimensional array of switching devices comprises a plurality of crossbar tiles. Each crossbar tile has a plurality of row wire segments intersecting a plurality of column wire segments, and a plurality of switching devices each formed at an intersection of a row wire segment and a column wire segment. The array has a plurality of lateral latches disposed in a plane of the switching devices. Each lateral latch is linked to a first wire segment of a first crossbar tile and a second wire segment of a second crossbar tile opposing the first wire segment. The lateral latch is operable to close or open to form or break an electric connection between the first and second wire segments. | 11-01-2012 |
20120280282 | Three Dimensional Multilayer Circuit - A three dimensional multilayer circuit ( | 11-08-2012 |
20120281980 | OPTICAL SENSOR NETWORKS AND METHODS FOR FABRICATING THE SAME - Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node ( | 11-08-2012 |
20120313070 | CONTROLLED SWITCHING MEMRISTOR - A controlled switching memristor includes a first electrode, a second electrode, and a switching layer positioned between the first electrode and the second electrode. The switching layer includes a material to switch between an ON state and an OFF state, in which at least one of the first electrode, the second electrode, and the switching layer is to generate a permanent field within the memristor to enable a speed and an energy of switching from the ON state to the OFF state to be substantially symmetric to a speed and energy of switching from the OFF state to the ON state. | 12-13-2012 |
20130026434 | MEMRISTOR WITH CONTROLLED ELECTRODE GRAIN SIZE - A memristor with a controlled electrode grain size includes an adhesion layer, a first electrode having a first surface contacting the adhesion layer and a second surface opposite the first surface, in which the first electrode is formed of an alloy of a base material and at least one second material, and in which the alloy has a relatively smaller grain size than a grain size of the base material. The memristor also includes a switching layer positioned adjacent to the second surface of the first electrode and a second electrode positioned adjacent to the switching layer. | 01-31-2013 |
20130027776 | CONTROLLING PHASE RESPONSE IN A SUB-WAVELENGTH GRATING LENS - A sub-wavelength grating device having controlled phase response includes a grating layer having line widths, line thicknesses, line periods, and line spacings selected to produce a first level of control in phase changes of different portions of a beam of light reflected from the grating layer. The device also includes a substrate affixed to the grating layer that produces a second level of control in phase changes of different portions of a beam of light reflected from the grating layer, the second level of control being accomplished abrupt stepping of the substrate in a horizontal dimension, ramping the substrate in a horizontal dimension, or changing the index of refraction in a horizontal dimension. | 01-31-2013 |
20130033920 | IONIC DEVICES CONTAINING A MEMBRANE BETWEEN LAYERS - A device contains a first layer ( | 02-07-2013 |
20130037773 | IONIC DEVICES WITH INTERACTING SPECIES - An ionic device includes a layer ( | 02-14-2013 |
20130038489 | AEROSTATIC PLATFORM FOR MONITORING AN EARTH-BASED SENSOR NETWORK - An aerostatic platform for monitoring an earth-based sensor network. The aerostatic platform includes an aerostat, at least one antenna coupled with the aerostat, and a plurality of restraints. The antenna is configurable to receive a signal transmitted from at least one sensor in the earth-based sensor network. The plurality of restraints is configurable for fixing the antenna in a fixed aerial location above the earth-based sensor network, and for maintaining the antenna in a sufficiently stationary position relative to the sensor to triangulate a location of the sensor from a locator signal received by the antenna. A sensor-network-monitoring system is also provided, along with a method for deploying the sensor-network monitoring system. | 02-14-2013 |
20130038856 | DETERMINATION OF A SENSOR DEVICE LOCATION IN A SENSOR NETWORK - Determination of a sensor device location in a sensor network is described. A system can include rotating optical beams having a known location. Detectors can be located with each of the rotating optical beams. The system can include a sensor device placeable as part of the sensor network. A reflector can be near the sensor device and can reflect at least two optical beams back to the detectors associated with each of the respective optical beams. A triangulation module can triangulate a position of the reflector, and thus the sensor, based on the reflected optical beams. | 02-14-2013 |
20130040862 | MULTI-PILLAR STRUCTURE FOR MOLECULAR ANALYSIS - A multi-pillar structure for molecular analysis is provided. The structure comprises at least two nanopoles, each nanopole attached at one end to a substrate and freely movable along its length. The opposite ends of the at least two nanopoles are each capable of movement toward each other to trap at least one analyte molecule at their opposite ends. Each nanopole is coated with a metal coating. An array of such multi-pillar structures is also provided. A method for preparing the multi-pillar structure is further provided. | 02-14-2013 |
20130044525 | ASYMMETRIC SWITCHING RECTIFIER - An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device. | 02-21-2013 |
20130099187 | MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL - A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M | 04-25-2013 |
20130099872 | CHAOTIC OSCILLATOR-BASED RANDOM NUMBER GENERATION - Chaotic oscillator-based random number generation is described. In an example, a circuit includes a negative differential resistance (NDR) device to receive an alternating current (AC) bias. The circuit further includes a capacitance in parallel with the NDR device, the capacitance having a value such that, in response to a direct current (DC) bias applied to the NDR device and the capacitance, a voltage across the capacitance oscillates with a chaotic period. The circuit further includes a random number generator to generate random numbers using samples of the voltage across the capacitance. | 04-25-2013 |
20130106462 | Field-programmable analog array with memristors | 05-02-2013 |
20130106480 | METAL-INSULATOR TRANSITION LATCH | 05-02-2013 |
20130175497 | DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS - A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material. | 07-11-2013 |
20130176766 | STATEFUL NEGATIVE DIFFERENTIAL RESISTANCE DEVICES - A stateful negative differential resistance device includes a first conductive electrode and a second conductive electrode. The device also includes a first material with a reversible, nonvolatile resistance that changes based on applied electrical energy and a second material comprising a differential resistance that is negative in a locally active region. The first material and second material are sandwiched between the first conductive electrode and second conductive electrode. A method for using a stateful NDR device includes applying programming energy to the stateful NDR device to set a state of the stateful NDR device to a predetermined state and removing electrical power from the stateful NDR device. Power-up energy is applied to the stateful NDR device such that the stateful NDR device returns to the predetermined state. | 07-11-2013 |
20130195721 | METALLIC-NANOFINGER DEVICE FOR CHEMICAL SENSING - A metallic-nanofinger device for chemical sensing. The device includes a substrate, and a plurality of nanofingers. A nanofinger includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger are to self-arrange into a close-packed configuration with at least one analyte molecule disposed between at least the metallic cap and a second metallic cap of respective nanofinger and second nanofinger. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A coating encapsulating the metallic cap to respond upon exposure to a liquid, and a chemical-sensing chip including the metallic-nanofinger device are also provided. | 08-01-2013 |
20130207069 | METAL-INSULATOR TRANSITION SWITCHING DEVICES - A metal-insulator transition switching device includes a first electrode and a second electrode. A channel region which includes a bulk metal-insulator transition material separates the first electrode and the second electrode. A method for forming a metal-insulator transition switching device includes depositing a layer of bulk metal-insulator transition material in between a first electrode and a second electrode to form a channel region and forming a gate electrode operatively connected to the channel region. | 08-15-2013 |
20130217143 | CHEMICAL-ANALYSIS DEVICE INTEGRATED WITH METALLIC-NANOFINGER DEVICE FOR CHEMICAL SENSING - A chemical-analysis device integrated with a metallic-nanofinger device for chemical sensing. The chemical-analysis device includes a metallic-nanofinger device, and a platform. The metallic-nanofinger device includes a substrate, and a plurality of nanofingers coupled with the substrate. A nanofinger of the plurality includes a flexible column, and a metallic cap coupled to an apex of the flexible column. At least the nanofinger and a second nanofinger of the plurality of nanofingers are to self-arrange into a close-packed configuration with at least one analyte molecule. A morphology of the metallic cap is to generate a shifted plasmonic-resonance peak associated with amplified luminescence from the analyte molecule. A method for using, and a chemical-analysis apparatus including the chemical-analysis device are also provided. | 08-22-2013 |
20130234103 | NANOSCALE SWITCHING DEVICE WITH AN AMORPHOUS SWITCHING MATERIAL - Nanoscale switching devices are disclosed. The devices have a first electrode of a nanoscale width; a second electrode of a nanoscale width; and a layer of an active region disposed between and in electrical contact with the first and second electrodes. The active region contains a switching material capable of carrying a significant amount of defects which can trap and de-trap electrons under electrical bias. The switching material is in an amorphous state. A nanoscale crossbar array containing a plurality of the devices and a method for making the devices are also disclosed. | 09-12-2013 |
20130242637 | Memelectronic Device - A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic. | 09-19-2013 |
20130249879 | Display Matrix with Resistance Switches - A display matrix may have a resistance switch and a display element formed on a common display substrate. The resistance switch may have a metal insulator transition (MIT) material that has a negative differential resistance (NDR) characteristic that exhibits a discontinuous resistance. | 09-26-2013 |
20130278929 | RAMAN SPECTROSCOPY - Apparatus, methods, and hollow metal waveguides to perform surface-enhanced Raman spectroscopy are disclosed. An example apparatus includes a hollow metal waveguide to direct Raman photons from an intermediate location within a volume of the hollow metal waveguide toward a distal end of the hollow metal waveguide, and a mirror to direct incident light from a light source to the intermediate location within the volume of the hollow metal waveguide and to direct at least some of the Raman photons toward the distal end. | 10-24-2013 |
20130307662 | NEGATIVE DIFFERENTIAL RESISTANCE DEVICE - Apparatus and methods related to negative differential resistance (NDR) are provided. An NDR device includes a spaced pair of electrodes and at least two different materials disposed there between. One of the two materials is characterized by negative thermal expansion, while the other material is characterized by positive thermal expansion. The two materials are further characterized by distinct electrical resistivities. The NDR device is characterized by a non-linear electrical resistance curve that includes a negative differential resistance range. The NDR device operates along the curve in accordance with an applied voltage across the pair of electrodes. | 11-21-2013 |
20130334485 | MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT - Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided. | 12-19-2013 |
20140027705 | MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS - A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided. | 01-30-2014 |
20140028347 | IMPLEMENTING LOGIC CIRCUITS WITH MEMRISTORS - Implementing logic with memristors may include circuitry with at least three memristors and a bias resistor in a logic cell. One of the at least three memristors is an output memristor within the logic cell and the other memristors of the at least three memristors are input memristors. Each of the at least three memristors and the bias resistor are electrically connected to voltage sources wherein each voltage applied to each of the at least three memristors and the bias resistor and resistance states of the at least three memristors determine a resistance state of the output memristor. | 01-30-2014 |
20140028995 | INTEGRATED SENSORS - Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a flexible substrate, and an array of spaced apart sensing members formed on a surface of the flexible substrate. Each of the spaced apart sensing members includes a plurality of polygon assemblies. The polygon assemblies are arranged in a controlled pattern on the surface of the flexible substrate such that each of the plurality of polygon assemblies is a predetermined distance from each other of the plurality of polygon assemblies, and each of the plurality of polygon assemblies including collapsible signal amplifying structures controllably positioned in a predetermined geometric shape. | 01-30-2014 |
20140029002 | ADJUSTABLE INTERSURFACE SPACING FOR SURFACE ENHANCED RAMAN SPECTROSCOPY - A sensor for surface enhanced Raman spectroscopy (SERS) sensor includes surfaces and an actuator to adjust an intersurface spacing between the surfaces to contain an analyte and allow the analyte to be released from containment. | 01-30-2014 |
20140036262 | ELECTRONIC AND PLASMONIC ENHANCEMENT FOR SURFACE ENHANCED RAMAN SPECTROSCOPY - An apparatus for surface enhanced Raman spectroscopy includes a substrate, a nanostructure and a plasmonic material. The nanostructure and the plasmonic material are integrated together to provide electronic and plasmonic enhancement to a Raman signal produced by electromagnetic radiation scattering from an analyte. | 02-06-2014 |
20140091270 | LOW ENERGY MEMRISTORS WITH ENGINEERED SWITCHING CHANNEL MATERIALS - Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel. | 04-03-2014 |
20140112059 | HIGH-RELIABILITY HIGH-SPEED MEMRISTOR - A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material. | 04-24-2014 |
20140145142 | MEMRISTOR STRUCTURE WITH A DOPANT SOURCE - A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed. | 05-29-2014 |
20140158973 | NITRIDE-BASED MEMRISTORS - A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided. | 06-12-2014 |
20140203864 | Electrically Actuated Switch - An electrically actuated switch comprises a first electrode, a second electrode, and an active region disposed therebetween. The active region comprises at least one primary active region comprising at least one material that can be doped or undoped to change its electrical conductivity, and a secondary active region comprising at least one material for providing a source/sink of ionic species that act as dopants for the primary active region(s). Methods of operating the switch are also provided. | 07-24-2014 |
20140211534 | LOCALLY ACTIVE MEMRISTIVE DEVICE - A method to operate an integrated circuit includes operating a locally active memristive device in a locally reactive region of an operating domain where the device exhibits inductor-like behavior, such as a phase shift where a voltage across the device leads a current through the device. | 07-31-2014 |
20140304467 | SHIFTABLE MEMORY EMPLOYING RING REGISTERS - Shiftable memory employs ring registers to shift a contiguous subset of data words stored in the ring registers within the shiftable memory. A shiftable memory includes a memory having built-in word-level shifting capability. The memory includes a plurality of ring registers to store data words. A contiguous subset of data words is shiftable between sets of the ring registers of the plurality from a first location to a second location within the memory. The contiguous subset of data words has a size that is smaller than a total size of the memory. The memory shifts only data words stored inside the contiguous subset when the contiguous subset is shifted. | 10-09-2014 |
20140346426 | Memristor with Channel Region in Thermal Equilibrium with Containing Region - A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region. | 11-27-2014 |
20140375990 | DOUBLE-GRATING SURFACE-ENHANCED RAMAN SPECTROSCOPY - A double-grating surface-enhanced Raman spectrometer. The spectrometer includes a substrate; a plurality of nanofingers carried by the substrate, the nanofingers arranged to define a first optical grating; a light source oriented to project a beam of light toward the first optical grating; a second optical grating oriented to receive a beam of light scattered from the first optical grating; and a detector oriented to receive a beam of light scattered from the second optical grating. | 12-25-2014 |
20150041751 | CUSTOMIZABLE NONLINEAR ELECTRICAL DEVICES - In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided. | 02-12-2015 |
20150053909 | NONLINEAR MEMRISTORS - A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material. | 02-26-2015 |
20150065390 | INTEGRATED SENSORS - Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a substrate and a sensing member formed on a surface of the substrate. The sensing member includes collapsible signal amplifying structures and an area surrounding the collapsible signal amplifying structures that enables self-positioning of droplets exposed thereto toward the collapsible signal amplifying structures. | 03-05-2015 |
20150076438 | NON-VOLATILE RESISTIVE MEMORY CELLS - Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion. | 03-19-2015 |