Patent application number | Description | Published |
20110053175 | Asymmetrically branched polymer conjugates and microarray assays - A composition comprising a conjugate of a randomly and asymmetrically branched dendritic polymer. | 03-03-2011 |
20110053243 | Asymmetrically branched polymer conjugates and microarray assays - A conjugate of a randomly and asymmetrically branched dendritic polymer and a member of a binding pair. | 03-03-2011 |
20110065090 | Asymmetrically branched polymer conjugates and microarray assays - A method of detection comprising a conjugate of a randomly and asymmetrically branched dendritic polymer. | 03-17-2011 |
20120220051 | Immunogenicity Assay - Assays for detecting antibodies to pharmaceutical preparations, food allergens and environmental allergens are described. | 08-30-2012 |
20140045727 | Polymer Conjugate Enhanced Bioassays - Incorporation of modified branched polymers in one or more components of assays enhances sensitivity, specificity or both, providing powerful point of use tests. | 02-13-2014 |
20140314664 | Hydrophobic Molecule-Induced Branched Polymer Aggregates And Their Use - Symmetrically and asymmetrically branched homopolymers are modified at the surface level with functional groups that enable forming aggregates with water insoluble or poorly water soluble pharmaceutically active agents (PAA). The aggregates formed are specifically induced by interaction of PAA and homopolymer and are different from aggregates that are formed by the polymer alone in the absence of the PAA or by the PAA alone in the absence of the polymer. Such aggregates can be used to improve drug solubility, stability, delivery and efficacy. | 10-23-2014 |
20150018250 | Symmetrically Branched Polymer Conjugates and Microarray Assays - Modified symmetrically branched polymers are combined with bioactive agents for a variety of purposes including drug delivery and conjugation to one member of a binding pair for use in an assay. | 01-15-2015 |
20160024252 | Oxazoline Polymer Compositions and Use Thereof - Compositions comprising an oxazoline polymer and optional linkers to carry a variety of molecules. | 01-28-2016 |
20160041186 | Immunogenicity Assay - Assays for detecting antibodies to pharmaceutical preparations, food allergens and environmental allergens are described. | 02-11-2016 |
20160054309 | Polymer Conjugate Enhanced Bioassays - Modified branched polymers are combined with bioactive agents which are one member of a binding pair for use in an assay. | 02-25-2016 |
Patent application number | Description | Published |
20080197409 | SUPERJUNCTION POWER MOSFET - An embodiment of an MOS device includes a semiconductor substrate of a first conductivity type, a first region of the first conductivity type having a length L | 08-21-2008 |
20090108339 | HIGH VOLTAGE TMOS SEMICONDUCTOR DEVICE WITH LOW GATE CHARGE STRUCTURE AND METHOD OF MAKING - A TMOS device ( | 04-30-2009 |
20110275187 | METHOD FOR FORMING A VERTICAL MOS TRANSISTOR - A method is used to form a vertical MOS transistor. The method utilizes a semiconductor layer. An opening is etched in the semiconductor layer. A gate dielectric is formed in the opening that has a vertical portion that extends to a top surface of the first semiconductor layer. A gate is formed in the opening having a major portion laterally adjacent to the vertical portion of the gate dielectric and an overhang portion that extends laterally over the vertical portion of the gate dielectric. An implant is performed to form a source region at the top surface of the semiconductor layer while the overhang portion is present. | 11-10-2011 |
20130344667 | Trench FET with Source Recess Etch - A high voltage vertical field effect transistor device ( | 12-26-2013 |
20140070313 | POWER MOSFET CURRENT SENSE STRUCTURE AND METHOD - A power MOSFET has a main-FET (MFET) and an embedded current sensing-FET (SFET). MFET gate runners are coupled to SFET gate runners by isolation gate runners (IGRs) in a buffer space between the MFET and the SFET. In one embodiment, n IGRs (i=1 to n) couple n+1 gates of a first portion of the MFET ( | 03-13-2014 |
20150372130 | POWER DEVICE TERMINATION STRUCTURES AND METHODS - Power device termination structures and methods are disclosed herein. The structures include a trenched-gate semiconductor device. The trenched-gate semiconductor device includes a semiconducting material and an array of trenched-gate power transistors. The array defines an inner region including a plurality of inner transistors and an outer region including a plurality of outer transistors. The inner transistors include a plurality of inner trenches that has an average inner region spacing. The outer transistors include a plurality of outer trenches that has an average termination region spacing. The average termination region spacing is greater than the average inner region spacing or is selected such that a breakdown voltage of the plurality of outer transistors is greater than a breakdown voltage of the plurality of inner transistors. | 12-24-2015 |
20160049508 | BIDIRECTIONAL TRENCH FET WITH GATE-BASED RESURF - A device includes a semiconductor substrate having a surface, a trench in the semiconductor substrate extending vertically from the surface, a body region laterally adjacent the trench, spaced from the surface, having a first conductivity type, and in which a channel is formed during operation, a drift region between the body region and the surface, and having a second conductivity type, a gate structure disposed in the trench alongside the body region, recessed from the surface, and configured to receive a control voltage is applied to control formation of the channel, and a gate dielectric layer disposed along a sidewall of the trench between the gate structure and the body region. The gate structure and the gate dielectric layer have a substantial vertical overlap with the drift region such that electric field magnitudes in the drift region are reduced through application of the control voltage. | 02-18-2016 |
20160064546 | EDGE TERMINATION FOR TRENCH GATE FET - A semiconductor device includes a semiconductor layer disposed at a substrate and a plurality of active cells disposed at the semiconductor layer. Each active cell includes a trench extending into the semiconductor layer and a body region disposed in the semiconductor layer adjacent to a sidewall of the trench and at a first depth below the surface of the semiconductor layer. The semiconductor device further includes a termination cell disposed at the semiconductor layer adjacent to an edge of the plurality of active cells. The termination cell includes a trench extending into the semiconductor layer, and further includes a body region disposed in the semiconductor layer adjacent to a sidewall of the trench of the termination cell and at a second depth less than the first depth. The body regions of the active cells and of the termination cell have a conductivity type different than that of the semiconductor layer. | 03-03-2016 |
20160064556 | TRENCH GATE FET WITH SELF-ALIGNED SOURCE CONTACT - A semiconductor device includes a substrate and a semiconductor layer having a first conductivity type. The semiconductor device further includes first and second trenches extending into the semiconductor layer from a surface of the semiconductor layer, each of the first and second trenches including a corresponding gate electrode. The semiconductor device further includes a body region having a second conductivity type different than the first conductivity type and a source contact region having the first conductivity type. The body region is disposed in the semiconductor layer below the surface of the semiconductor layer and between a sidewall of the first trench and an adjacent sidewall of a second trench. The source contact region is disposed in the semiconductor layer between the body region and the surface of the semiconductor layer and extending between the sidewall of the first trench and the corresponding sidewall of the second trench. | 03-03-2016 |
Patent application number | Description | Published |
20090162424 | COMPOSITIONS AND METHODS FOR MAKING AND USING MULTIFUNCTIONAL POLYMERIZED LIPOSOMES - According to some embodiments, the present invention provides compositions and methods for making and using multifunctional polymerized liposomes finding relevant application in medical sciences, particularly in bioimaging, diagnostics, drug delivery, and drug formulation. The compositions and methods involve lipids that are both polymerizable and have a “clickable” group that provides the ability to functionalize via a click reaction with various functional moieties useful for the above-listed applications. | 06-25-2009 |
20110190623 | THERMALLY-ACTIVATABLE LIPOSOME COMPOSITIONS AND METHODS FOR IMAGING, DIAGNOSIS AND THERAPY - Disclosed are thermally-activatable liposomal compositions and methods for their use in the formulation and administration of therapeutic, prophylactic, and diagnostic agents. The disclosed liposome structures are capable of carrying a variety of biologically active reagents, and permitting their controlled release in vivo by exploiting properties of their thermoregulatable lability. | 08-04-2011 |
20130324738 | COMPOSITIONS AND METHODS FOR MAKING AND USING MULTIFUNCTIONAL POLYMERIZED LIPOSOMES - According to some embodiments, the present invention provides compositions and methods for making and using multifunctional polymerized liposomes finding relevant application in medical sciences, particularly in bioimaging, diagnostics, drug delivery, and drug formulation. The compositions and methods involve lipids that are both polymerizable and have a “clickable” group that provides the ability to functionalize via a click reaction with various functional moieties useful for the above-listed applications. | 12-05-2013 |
Patent application number | Description | Published |
20120135899 | Lubricating Composition Containing Friction Modifier and Viscosity Modifier - A lubricant composition suitable for lubricating an internal combustion engine comprises: (a) an oil of lubricating viscosity having a viscosity index of at least 105 and a kinematic viscosity at 100 C of less than 7 mm2s-1; (b) 0.01 to 2 weight percent of a friction modifier represented by the structure [I]; (c) 0.5 to 4 weight percent of a poly(meth)acrylate viscosity modifier polymer; (d) 0 to 500 parts per million by weight of molybdenum in the form of an oil-soluble molybdenum compound; and (e) 0 to 200 parts per million by weight of boron in the form of an oil-soluble boron compound. | 05-31-2012 |
20120135902 | Polymethacrylates as High VI Viscosity Modifiers - A lubricating composition contains an oil of lubricating viscosity and 0.5 to 10 percent by weight of a poly (meth)acrylate viscosity modifier polymer comprising (i) 15 weight percent to 35 weight percent monomer units of methyl (meth) acrylate, (ii) 0 to 10 weight percent monomer units of one or more C | 05-31-2012 |
20120220505 | Farm Tractor Lubricating Composition with Good Water Tolerance - A lubricant of (a) an oil of lubricating viscosity; (b) a block copolymer of (i) a hydrophobic first block of C | 08-30-2012 |
20120220506 | Star Polymer and Lubricating Composition Thereof - The present invention relates to a lubricating composition containing an oil of lubricating viscosity and a star polymer that has at least two inner blocks, at least one of which is in turn bonded to one or more outer blocks. The invention further relates to methods of lubricating a mechanical device with the lubricating composition. | 08-30-2012 |
20140058026 | COATED SUBSTRATES AND METHODS FOR PRODUCING THE SAME - Novel coated substrates comprise a substrate and a coating thereon. The coating comprises a polymeric component and a colorant compound. The colorant compound is produced by reacting an isocyanate compound and an active hydrogen-terminated colorant. | 02-27-2014 |
20150086736 | POLYETHYLENE ARTICLES - A polyethylene article comprises crystalline polyethylene in an orthorhombic unit cell. The b-axes of the crystalline polyethylene are substantially aligned with the machine direction of the article. In particular, the Herman's index of the b-axes in the machine direction is greater than zero and greater than the Herman's indices of the b-axes in both the transverse and normal directions. The unique physical attributes exhibited by a polyethylene article having this new morphology are also described. | 03-26-2015 |
20150087757 | THERMOPLASTIC POLYMER COMPOSITION - The invention provides a compound conforming to the structure of Formula (C) | 03-26-2015 |
20150087758 | THERMOPLASTIC POLYMER COMPOSITION - The invention provides a compound conforming to the structure of Formula (CX) | 03-26-2015 |
20150094406 | THERMOPLASTIC POLYMER COMPOSITION - The invention provides a thermoplastic polymer composition comprising a polyolefin polymer and a nucleating agent. The nucleating agent comprises a compound conforming to the structure of Formula (I) | 04-02-2015 |
20150148275 | STAR POLYMER AND LUBRICATING COMPOSITION THEREOF - The present invention relates to a lubricating composition containing an oil of lubricating viscosity and a star polymer that has at least two inner blocks, at least one of which is in turn bonded to one or more outer blocks. The invention further relates to methods of lubricating a mechanical device with the lubricating composition. | 05-28-2015 |
20150322384 | LAUNDRY CARE COMPOSITIONS - A laundry care composition comprises a laundry care ingredient or adjunct and at least one compound that is capable of changing from a first color state (i.e., the initial color state in the composition) to a second color state that is perceptibly different from the first color state. A method for treating textile articles comprises the steps of: (a) providing a laundry care composition as described above; (b) adding the laundry care composition to a liquid medium; and (c) placing the textile articles in the liquid medium. | 11-12-2015 |
Patent application number | Description | Published |
20090015351 | NANO-ELECTROMECHANICAL CIRCUIT USING CO-PLANAR TRANSMISSION LINE - A co-planar waveguide structure is integrated with an upwardly extending resonant pillar to produce transfer cells that provide controlled transmission of electricity between adjacent structures of the co-planar waveguide in order to produce easily fabricated electronic devices operating at megahertz and gigahertz speeds for filtration, modulation, rectification, and mixing of high-frequency signals. | 01-15-2009 |
20090321633 | NANOPILLAR ARRAYS FOR ELECTRON EMISSION - The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission. Nano-structured semiconductor membranes of this aspect of the present invention are also useful as directed charge amplifiers wherein secondary emission from a nanopillar array provides gain functionality for increasing the intensity of radiation comprising incident electrons. | 12-31-2009 |
20100127716 | RADIO-FREQUENCY ION CHANNEL PROBE - A patch-clamp system employs a high-frequency characterization of cell wall membranes. Changes in the frequency response of a tank circuit incorporating the cell wall membrane impedance provides highly sensitive and highly time-resolved measurements of ion channel activity. | 05-27-2010 |
20100129603 | RETRO-PERCUSSIVE TECHNIQUE FOR CREATING NANOSCALE HOLES - A method of forming extremely small pores in glass or a similar substrate, useful, for example, in patch clamp applications, that employs a backer plate to contain energy of a laser-induced ablation through the front surface of the substrate so as to create a rear surface shock wave providing a fire polishing of the exit aperture of the pore such as produces improved sealing with cell membranes. | 05-27-2010 |
20120141729 | Retro-Percussive Technique for Creating Nanoscale Holes - A method of forming extremely small pores in glass or a similar substrate, useful, for example, in patch clamp applications, that employs a backer plate to contain energy of a laser-induced ablation through the front surface of the substrate so as to create a rear surface shock wave providing a fire polishing of the exit aperture of the pore such as produces improved sealing with cell membranes. | 06-07-2012 |
Patent application number | Description | Published |
20090202648 | AGRICULTURAL COMPOSITIONS - Compositions have been discovered that are suitable for forming a stable dispersion. The compositions comprise an agriculturally active compound and a multivalent metal oligomeric or polymeric compound having a molecular weight of from about 150 to about 15,000 Daltons. | 08-13-2009 |
20100069314 | PESTICIDAL COMPOSITIONS - Stabilized mixtures of pesticides are disclosed. | 03-18-2010 |
20100113275 | CONTROLLING SPRAY DRIFT OF PESTICIDES WITH SELF-EMULSIFIABLE ESTERS - Spray drift during the application of agricultural chemicals is reduced by incorporating a self-emulsifiable ester into the liquid to be sprayed. | 05-06-2010 |
20100168177 | Stable insecticide compositions - Insect controlling compositions including an N-substituted (6-haloalkylpyridin-3-yl)alkyl sulfoximine compound and an organic acid or a salt thereof exhibit increased stability. | 07-01-2010 |
20100168178 | Stable insecticide compositions and methods for producing same - Insect controlling compositions including an N-substituted (6-haloalkylpyridin-3-yl)alkyl sulfoximine compound exhibiting increased stability, along with methods for preparing same, are disclosed. | 07-01-2010 |
20100273654 | HIGH-STRENGTH, HERBICIDAL COMPOSITIONS OF GLYPHOSATE AND 2,4-D SALTS - The mixture of certain amine salts of glyphosate and 2,4-D allows the preparation of high-strength liquid compositions containing up to greater than 450 gae/L of total active ingredient loading if the pH is adjusted to about 6.0 to about 8.0. Compositions are particularly well-suited for application to crops that are resistant or tolerant to both glyphosate and 2,4-D. | 10-28-2010 |
20100331182 | HERBICIDAL CONCENTRATE COMPOSITIONS CONTAINING GLYPHOSATE AND DICAMBA SALTS - The mixture of potassium or certain amine salts of glyphosate and dicamba allows the preparation of high-strength liquid compositions containing greater than 300 gae/L of total active ingredient loading if the pH is adjusted between about 6.0 and about 8.0. Compositions are particularly well-suited for herbicidal applications on crops that are resistant or tolerant to both glyphosate and dicamba. | 12-30-2010 |
20110275516 | STABILIZED AGRICULTURAL OIL DISPERSIONS - Agrochemical oil dispersions are stabilized to particle sedimentation by use of a combination of a clay or silica type rheology modifier and a polymer or oligomer capable of hydrogen bonding. | 11-10-2011 |
20110301033 | MICROENCAPSULATED OILS FOR CONTROLLING PESTICIDE SPRAY DRIFT - Spray drift during the application of agricultural chemicals is reduced by incorporating microencapsulated oils into the aqueous solution or mixture to be sprayed. | 12-08-2011 |
20120065068 | AMINE AND AMINE OXIDE SURFACTANTS FOR CONTROLLING HERBICIDE SPRAY DRIFT - Spray drift during the application of an aqueous mixture of glyphosate and an auxinic herbicide is reduced by incorporating certain tertiary amine or tertiary amine oxide surfactants into the aqueous solution or mixture to be sprayed. | 03-15-2012 |
20120208700 | STABLE AGROCHEMICAL OIL DISPERSIONS - The present disclosure relates to the use of dibenzylidene sorbitol or derivatives of dibenzylidene sorbitol as rheology additives to provide stability to oil dispersion formulations of agrochemical active ingredients. | 08-16-2012 |
20120316205 | OIL DISPERSION OF SULFOXIMINES FOR THE CONTROL OF INSECTS - The invention relates to oil dispersions of sulfoximine insecticides, such as sulfoxaflor, and methods of using these dispersions to control insects such as whitefly. | 12-13-2012 |
20130203691 | STABLE INSECTICIDE COMPOSITIONS AND METHODS FOR PRODUCING SAME - Insect controlling compositions including an N-substituted (6-haloalkylpyridin-3-yl)alkyl sulfoximine compound exhibiting increased stability, along with methods for preparing same, are disclosed. | 08-08-2013 |
20130237419 | ORGANIC COLLOID-STABILIZED EMULSION FOR CONTROLLING PESTICIDE SPRAY DRIFT - Spray drift during the application of an aqueous mixture of an auxinic herbicide is reduced by incorporating into a spray mixture an organic colloid-stabilized oil-in-water emulsion. | 09-12-2013 |
20130252817 | AQUEOUS HERBICIDE CONCENTRATES CONTAINING FATTY ACID ALKYL ESTERS, FATTY ACID AMIDES, OR TRIGLYCERIDE FATTY ACID ESTERS AND METHODS OF USE - Aqueous herbicide concentrates containing a herbicide (such as an auxinic herbicide), a surfactant, and a fatty acid alkyl ester, a fatty acid amide, and/or a triglyceride fatty acid ester and the use of aqueous herbicide spray mixtures incorporating such concentrates are described. The aqueous herbicide concentrates described herein include from 5 to 90 weight percent of a water soluble salt of a herbicide, from 0.1 to 20 weight percent of a surfactant, and from 0.1 to 20 weight percent of a fatty acid alkyl ester, fatty acid amide, and/or a triglyceride fatty acid ester. The aqueous herbicide concentrate is a transparent, homogeneous liquid that forms a stable emulsion upon dilution into a spray solution. | 09-26-2013 |
20140106972 | ALKYLBENZENE SULFONATE SURFACTANTS FOR CONTROLLING HERBICIDE SPRAY DRIFT - Spray drift during the application of an aqueous mixture of a herbicide, such as an auxinic herbicide, is reduced by incorporating into a spray mixture one or more alkylbenzene sulfonate surfactants. | 04-17-2014 |
20140179529 | AMINE AND AMINE OXIDE SURFACTANTS FOR CONTROLLING HERBICIDE SPRAY DRIFT - Spray drift during the application of an aqueous mixture of glyphosate and an auxinic herbicide is reduced by incorporating certain tertiary amine or tertiary amine oxide surfactants into the aqueous solution or mixture to be sprayed. | 06-26-2014 |
20140315840 | STABLE INSECTICIDE COMPOSITIONS AND METHODS FOR PRODUCING SAME - Insect controlling compositions including an N-substituted (6-haloalkylpyridin-3-yl)alkyl sulfoximine compound exhibiting increased stability, along with methods for preparing same, are disclosed. | 10-23-2014 |
Patent application number | Description | Published |
20120254553 | ZONE GROUP REASSIGNMENT USING STORAGE DEVICE SIGNATURES - A method and apparatus for assigning zone groups to a storage enclosure is disclosed. When a storage enclosure is added to a switch in a fabric, a signature of the storage enclosure will be created from the storage devices loaded in that enclosure. The signature will then be compared against the signature from a storage enclosure that is offline. When the signature matches the signature of the offline storage enclosure, the zone groups from the offline storage enclosure will be copied to the storage enclosure that was added to the fabric. | 10-04-2012 |
20120297052 | DETERMINING MISCONNECTION OF AN ELECTRONIC DEVICE TO A NETWORK DEVICE USING ZONE INFORMATION - Connection of an electronic device to a particular port of the network device is detected. It is determined based on zone information whether a misconnection has occurred. The zone information defines plural zones. | 11-22-2012 |
20130042039 | DEADLOCK PREVENTION - Methods, systems, and computer-readable media with executable instructions stored thereon for preventing deadlocks are provided. An inter-device mutex (IDM) can be locked for a first client. An error message can be sent to a second client in response to a received first lock command from the second client while the IDM is locked for the first client. A number of second lock commands from the second client while the IDM is locked for the first client can be received. The IDM can be unlocked for the first client in response to an unlock command received from the first client. The IDM can be locked for the second client in response to a received third lock command from the second client, wherein the third lock command is received subsequent to unlocking the IDM for the first client. | 02-14-2013 |
20150254019 | Zone Group Reassignment Using Storage Device Signatures - In one example, a method for assigning zone groups to a physical storage enclosure includes comparing a first signature assigned to a number of first storage devices in an online physical storage enclosure against a second signature assigned to a number of second storage devices in a first offline physical storage enclosure of a number of offline physical storage enclosures. The method may further include, in response to a determination that the first signature matches the second signature, copying zone groups from the first offline physical storage enclosure associated with the second signature to the online physical storage enclosure. | 09-10-2015 |
Patent application number | Description | Published |
20120249033 | SENSORLESS MOTOR CONTROL - An method for driving a motor is provided. A plurality of pulse width modulation (PWM) signals are generated from a commanded voltage signal and a commanded angle signal, and these PWM signal are used to drive a motor (which has a plurality of phases). Currents through the phases of the motor are measured, and a Park transformation is performed on the measured currents to determine a projection current measurement. Based at least in part on the projection current measurement, the adjusting the commanded voltage signal and the commanded angle signal can be adjusted. | 10-04-2012 |
20130015793 | METHOD AND APPARATUS FOR SPACE VECTOR PULSE WIDTH MODULATION OF A THREE-PHASE CURRENT CONSTRUCTION WITH SINGLE DC-LINK SHUNTAANM Qin; LingAACI HoustonAAST TXAACO USAAGP Qin; Ling Houston TX USAANM Akin; BilalAACI StaffordAAST TXAACO USAAGP Akin; Bilal Stafford TX US - A method for driving a motor having a plurality of phases is provided. Initially, first, second, and third intervals for a pulse width modulation (PWM) period from first and second voltage commands are generated. The first and second voltage commands correspond to a voltage vector for the motor, and the voltage vector has an associated sector. A conversion formula is then determined for the first, second, third intervals based on the associated sector for the voltage vector. Using the conversion formula and the first, second, and third intervals, fourth, fifth, and sixth intervals are generated, and a set of PWM signals for the PWM period is generated from the fourth, fifth, and sixth intervals. The motor is then driven with the second set of PWM signals, and a current traversing the plurality of phases with a single shunt is measured. | 01-17-2013 |
20130043811 | FIELD ORIENTED CONTROL OF A MOTOR WITH A SINGLE SHUNT - A method for driving a motor is provided. Pulse width modulation (PWM) signals are generated from a voltage signal and a commanded angle signal, which drives a motor with multiple phases. A motor current from a motor is measured with a single shunt and converted into a digital signal. Based on the digital signal and the commanded angle signal, direct-axis and quadrant-axis currents for the motor can be determined, and the voltage signal and the commanded angle signal can be adjusted based at least in part on the direct-axis and quadrant-axis currents. | 02-21-2013 |
20140042943 | SENSORLESS FIELD-ORIENTED CONTROL (FOC) WITHOUT CURRENT SAMPLING FOR MOTORS - An apparatus includes a sensorless field-oriented control (FOC) motor controller. The motor controller includes a pulse width modulation (PWM) controller configured to generate PWM signals and to provide the PWM signals to an inverter. The motor controller also includes an angle sampler configured to receive a commanded voltage angle signal and to provide the commanded voltage angle signal as an output signal in response to a triggering event. The triggering event is based on a voltage or a current associated with an input or an output of the inverter. The motor controller further includes a first combiner configured to combine (i) a feed-forward voltage angle signal and (ii) a second signal based on the output signal. The first combiner is configured to generate the commanded voltage angle signal. In addition, the motor controller includes a second combiner configured to combine a feed-forward voltage amplitude signal and the second signal. | 02-13-2014 |
Patent application number | Description | Published |
20120142615 | METHODS RELATED TO THE TREATMENT OF NEURODEGENERATIVE AND INFLAMMATORY CONDITIONS - The invention includes methods of neuroprotection, inducing release of neurotrophic factors, inhibiting the over-activation of innate immune cells, attenuating the toxin-induced death and/or damage of tissues, reducing inflammation, treating an inflammation-related condition, and inhibiting NADPH oxidase, that includes contacting or administering an effective amount of at least one compound of the invention that include: valproic acid, sodium butyrate, and salts thereof; opioid peptides; a peptide comprising the tripeptide GGF; and morphinans, such as naloxone, naltrexone, 3-hydroxy-morphinan and dextromethorphan. | 06-07-2012 |
20140315785 | METHODS RELATED TO THE TREATMENT OF NEURODEGENERATIVE AND INFLAMMATORY CONDITIONS - The invention includes methods of neuroprotection, inducing release of neurotrophic factors, inhibiting the over-activation of innate immune cells, attenuating the toxin-induced death and/or damage of tissues, reducing inflammation, treating an inflammation-related condition, and inhibiting NADPH oxidase, that includes contacting or administering an effective amount of at least one compound of the invention that include: valproic acid, sodium butyrate, and salts thereof; opioid peptides; a peptide comprising the tripeptide GGF; and morphinans, such as naloxone, naltrexone, 3-hydroxy-morphinan and dextromethorphan. | 10-23-2014 |
Patent application number | Description | Published |
20080248597 | Methods for determining a dose of an impurity implanted in a semiconductor substrate and an apparatus for same - Methods of determining a total impurity dose for a plasma doping process, and an apparatus configured to determine same. A total ion dose implanted in a semiconductor substrate is directly measured, such as by utilizing a Faraday cup. A ratio of impurity-based ion species to non-impurity-based ion species in a plasma generated by the plasma doping process and a ratio of each impurity-based ion species to a total impurity-based ion species in the plasma are directly measured. The ratios may be directly measured by ion mass spectroscopy. The total ion dose and the ratios are used to determine the total impurity dose. The apparatus includes an ion detector, an ion mass spectrometer, a dosimeter, and software. | 10-09-2008 |
20090081858 | Sputtering-Less Ultra-Low Energy Ion Implantation - Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided. | 03-26-2009 |
20090120581 | SYSTEMS AND METHODS FOR PLASMA PROCESSING OF MICROFEATURE WORKPIECES - Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma. | 05-14-2009 |
20100273277 | RAPID THERMAL PROCESSING SYSTEMS AND METHODS FOR TREATING MICROELECTRONIC SUBSTRATES - Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature. | 10-28-2010 |
20110212608 | Sputtering-Less Ultra-Low Energy Ion Implantation - Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided. | 09-01-2011 |
20120108042 | Methods Of Forming Doped Regions In Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 05-03-2012 |
20130012007 | METHODS OF IMPLANTING DOPANT IONS - Methods of implanting dopant ions in a substrate include depositing a sacrificial material on a substrate. Dopant ions are implanted into the substrate while sputtering the sacrificial material, without substantially sputtering the substrate. Substantially no sacrificial material remains on the substrate after the implanting of the dopant ions. Some methods include forming a sacrificial material over a substrate, and implanting dopant ions into the substrate while removing substantially all the sacrificial material from the substrate. Substantially no sputtering of the substrate occurs during the implanting of the dopant ions. Methods of doping a substrate include implanting dopant ions into a substrate having a sacrificial material thereon, and sputtering the sacrificial material while implanting the dopant ions without substantially sputtering the substrate. Substantially no sacrificial material remains on the substrate after implanting the dopant ions. | 01-10-2013 |
20130072006 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 03-21-2013 |
20130089966 | Methods of Processing Units Comprising Crystalline Materials, and Methods of Forming Semiconductor-On-Insulator Constructions - Some embodiments include methods of processing a unit containing crystalline material. A damage region may be formed within the crystalline material, and a portion of the unit may be above the damage region. A chuck may be used to bend the unit and thereby induce cleavage along the damage region to form a structure from the portion of the unit above the damage region. Some embodiments include methods of forming semiconductor-on-insulator constructions. A unit may be formed to have dielectric material over monocrystalline semiconductor material. A damage region may be formed within the monocrystalline semiconductor material, and a portion of the monocrystalline semiconductor material may be between the damage region and the dielectric material. The unit may be incorporated into an assembly with a handle component, and a chuck may be used to contort the assembly and thereby induce cleavage along the damage region. | 04-11-2013 |
20130233834 | RAPID THERMAL PROCESSING SYSTEMS AND METHODS FOR TREATING MICROELECTRONIC SUBSTRATES - Rapid thermal processing systems and associated methods are disclosed herein. In one embodiment, a method for heating a microelectronic substrate include generating a plasma, applying the generated plasma to a surface of the microelectronic substrate, and raising a temperature of the microelectronic substrate with the generated plasma applied to the surface of the microelectronic substrate. The method further includes continuing to apply the generated plasma until the microelectronic substrate reaches a desired temperature. | 09-12-2013 |
20130288466 | Methods of Forming Doped Regions in Semiconductor Substrates - Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant. | 10-31-2013 |
20140144379 | SYSTEMS AND METHODS FOR PLASMA DOPING MICROFEATURE WORKPIECES - Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece. | 05-29-2014 |
20140197134 | SYSTEMS AND METHODS FOR PLASMA PROCESSING OF MICROFEATURE WORKPIECES - Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma. | 07-17-2014 |
20140197416 | MEMORIES AND METHODS OF FORMING THIN-FILM TRANSISTORS USING HYDROGEN PLASMA DOPING - Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled. | 07-17-2014 |
20150179936 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells. | 06-25-2015 |
20150206906 | MEMORIES AND METHODS OF FORMING THIN-FILM TRANSISTORS USING HYDROGEN PLASMA DOPING - Methods of forming thin-film transistors and memories are disclosed. In one such method, polycrystalline silicon is hydrogen plasma doped to form doped polycrystalline silicon. The doped polycrystalline silicon is then annealed. The hydrogen plasma doping and the annealing are decoupled. | 07-23-2015 |
20150221540 | DEVICES, SYSTEMS AND METHODS FOR ELECTROSTATIC FORCE ENHANCED SEMICONDUCTOR BONDING - Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates. | 08-06-2015 |
20150318467 | PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS - Memory devices and methods for fabricating memory devices have been disclosed. One such memory device includes a first electrode material formed on a word line material. A selector device material is formed on the first electrode material. A second electrode material is formed on the selector device material. A phase change material is formed on the second electrode material. A third electrode material is formed on the phase change material. An adhesion species is plasma doped into sidewalls of the memory stack and a liner material is formed on the sidewalls of the memory stack. The adhesion species intermixes with an element of the memory stack and the sidewall liner to terminate unsatisfied atomic bonds of the element and the sidewall liner. | 11-05-2015 |
20150318468 | PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS - Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner. | 11-05-2015 |
20160035974 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include a memory cell having a first electrode, and an intermediate material over and directly against the first electrode. The intermediate material includes stabilizing species corresponding to one or both of carbon and boron. The memory cell also has a switching material over and directly against the intermediate material, an ion reservoir material over the switching material, and a second electrode over the ion reservoir material. Some embodiments include methods of forming memory cells. | 02-04-2016 |
Patent application number | Description | Published |
20110129621 | SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSITION REACTOR - Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy. | 06-02-2011 |
20110229638 | SYSTEM AND METHOD FOR POLYCRYSTALLINE SILICON DEPOSITION - A method for making polycrystalline silicon from a gas comprising at least one silicon precursor compound is disclosed. The method can be effected from a gas comprising a polycrystalline silicon precursor compound in a chemical vapor deposition system by establishing a first flow pattern of the gas in a chemical vapor deposition reaction chamber, promoting reaction of at least a portion of the at least one precursor compound from the gas having the first flow pattern into polycrystalline silicon, establishing a second flow pattern of the gas in the reaction chamber, and promoting reaction of at least a portion of the at least one precursor compound from the gas having the second flow pattern into polycrystalline silicon. The chemical vapor deposition system can comprise a gas source comprising a gas with at least one precursor compound; a reaction chamber at least partially defined by a base plate and a bell jar; a first nozzle group disposed in one of the base plate and the bell jar, the first nozzle group fluidly connected to the gas source through a first manifold and a first flow regulator; a second nozzle group including a plurality of nozzles disposed in one of the base plate and the bell jar, the plurality of nozzles fluidly connected to the gas source through a second manifold and a second flow regulator. | 09-22-2011 |
20120171845 | CHUCK FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND RELATED METHODS THEREFOR - The present invention provides chucks having a well that supports rods produced during chemical vapor deposition. The chucks can utilize slats and windows around the well up to which the rod can grow and become supported. | 07-05-2012 |
20130121907 | Purification of Trichlorosilane - Systems and methods for removing boron-containing contaminants from a composition comprising trichlorosilane to form a purified product comprising trichlorosilane are disclosed. Purification columns and devices, having various locations of inlet and outlet ports, are fluidly connected to each other in order to remove various types of boron species and other impurities present in TCS. | 05-16-2013 |
20140170337 | Methods and Systems for Stabilizing Filaments in a Chemical Vapor Deposition Reactor - In various embodiments, systems, methods, and apparatus are provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor system. A system includes a base plate having a plurality of electrical connections, a pair of filaments extending from the base plate, and a stabilizer connecting the pair of filaments. Each filament is in electrical contact with, and defines a conductive path between, the two electrical connections. A method of stabilizing the filaments includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electrically insulating material. | 06-19-2014 |
Patent application number | Description | Published |
20090024223 | Crafting of cartilage - The invention is directed to producing a shaped cartilage matrix isolated from a human or animal where the cartilage has been crafted to facilitate disinfection, cleaning, devitalization, recellularization, and/or integration after implantation. The invention relates to a process for repairing a cartilage defect and implantation of a cartilage graft into a human or animal by crafting the cartilage matrix into individual grafts, disinfecting and cleaning the cartilage graft, applying a pretreatment solution to the cartilage graft, removing cellular debris using an extracting solution to produce a devitalized cartilage graft, implanting the cartilage graft into the cartilage defect with or without an insertion device, and sealing the implanted cartilage graft with recipient tissue. The devitalized cartilage graft is optionally recellularized in vitro, in vivo, or in situ with viable cells to render the tissue vital before or after the implantation. The devitalized cartilage graft is also optionally stored between the removing cellular debris and the recellularizing steps. | 01-22-2009 |
20090024224 | Implantation of cartilage - The invention is directed towards a process for implanting a cartilage graft into a cartilage defect and sealing the implanted cartilage graft with recipient tissue by creating a first bore down to the bone portion of the cartilage defect, creating a second shaped bore that is concentric to and on top of the first bore to match the shape and size of the cartilage graft, treating the first bore and the second shaped bore at the defect site with a bonding agent, treating the circumferential area of the cartilage graft with a bonding agent, inserting the cartilage graft into the defect site and wherein the superficial surface of the cartilage graft is at the same height as the surrounding cartilage surface. The first and second bonding agents may be activated by applying a stimulation agent to induce sealing, integration, and restoration of the hydrodynamic environments of the recipient tissue. The invention is also directed towards a process for repairing a cartilage defect and implanting a cartilage graft into a human or animal by crafting a cartilage matrix into individual grafts, cleaning and disinfecting the cartilage graft, applying a pretreatment solution to the cartilage graft, removing cellular debris using an extracting solution to produce a devitalized cartilage graft, implanting the cartilage graft into the cartilage defect with or without an insertion device, and sealing the implanted cartilage graft with recipient tissue. The devitalized cartilage graft is optionally recellularized in vitro, in vivo, or in situ with viable cells to render the tissue vital before or after the implantation. The devitalized cartilage graft is also optionally stored between the removing cellular debris and the recellularizing steps. The invention is further directed toward a repaired cartilage defect. | 01-22-2009 |
20090024229 | Devitalization and recellularization of cartilage - The present invention is directed toward recellularizing a devitalized cartilage graft with viable recellularizable cells in vivo, in situ, or in vitro to render the tissue vital. The present invention is also directed toward repairing a cartilage defect and implanting a cartilage graft into a human or animal by crafting a cartilage matrix into individual grafts, disinfecting and cleaning the cartilage graft, applying a pretreatment solution to the cartilage graft, removing cellular debris using an extracting solution to produce a devitalized cartilage graft, recellularizing the devitalized cartilage graft, implanting the cartilage graft into the cartilage defect with or without an insertion device, and sealing the implanted cartilage graft with recipient tissue. The devitalized cartilage graft is optionally stored between the removing cellular debris and the recellularizing steps. The present invention is directed to both recellularized cartilage grafts as well as a process for recellularizing cartilage grafts. | 01-22-2009 |
20130030528 | Implantation of Cartilage - The invention is directed towards a process for implanting a cartilage graft into a cartilage defect and sealing the implanted cartilage graft with recipient tissue. The invention is also directed towards a process for repairing a cartilage defect and implanting a cartilage graft into a human or animal. The invention is further directed toward a repaired cartilage defect. | 01-31-2013 |
20130090290 | BMP-2 Peptides and Methods of Use - The invention relates to truncated growth factors and variants thereof. The invention also relates to methods of making and using the truncated growth factors. | 04-11-2013 |
20130196909 | BMP-7 Peptides and Methods of Use - The invention relates to truncated growth factors and variants thereof. The invention also relate to methods of making and using the truncated growth factors. | 08-01-2013 |
20130196910 | BMP-4 PEPTIDES AND METHODS OF USE - The invention relates to truncated growth factors and variants thereof. The invention also relates to methods of making and using the truncated growth factors. | 08-01-2013 |
20150064163 | BMP Peptides & Methods of Use - The invention relates to truncated growth factors and variants thereof. The invention also relates to methods of making and using the truncated growth factors. The invention further relates to compositions including a protease and a growth factor comprising a bone morphogenic protein (BMP) or a variant thereof. The invention also relates to methods of using the composition. | 03-05-2015 |
Patent application number | Description | Published |
20120102562 | SECURING NETWORK COMMUNICATIONS WITH LOGICAL PARTITIONS - Embodiments of the present invention provide methods, systems, and computer program products that enable secure network communications with logical partitions. A gateway between a physical network adapter and at least one virtual network trunk adapter receives a packet. The gateway tags the packet with an indication of an origin of the packet. The gateway delivers the tagged packet to an intrusion prevention system for intrusion analysis. When the gateway receives the tagged packet from the intrusion prevention system, the gateway forwards the tagged packet according to the indication of origin of the tagged packet. | 04-26-2012 |
20130047024 | VIRTUAL I/O SERVER BANDWIDTH VIA SHARED ETHERNET ADAPTER (SEA) LOAD SHARING IN SEA FAIL-OVER CONFIGURATION - Provided are techniques for configuring a primary shared Ethernet adapter (SEA) and a backup SEA into a failover (F/O) protocol; providing a user interface (UI) for enabling a user to request a SEA load sharing protocol; in response to a user request for a SEA load sharing protocol, verifying that criteria for load sharing are satisfied; setting, by the UI a load sharing mode, comprising: requesting, by the backup SEA to the primary SEA, implementation of the SEA load sharing protocol; responsive to the requesting by the backup SEA, the primary SEA transmit an acknowledgment to the backup SEA and transitions into a sharing state; and responsive to the acknowledgment from the primary SEA, the backup SEA transitions to the sharing state. | 02-21-2013 |
20130194912 | SEA FAILOVER MECHANISM WITH MINIMIZED PACKET LOSSES - Provided are techniques for active SEA learning about a client LPAR MAC addresses via address resolution protocol (ARP) packets received on a virtual interface (of the active SEA). Any new client MAC addresses learned on the active SEA are sent to the inactive SEA via a control channel. When SEA failover happens, as the previously inactive SEA is about to become active, it will first send out RARP (reverse ARP) packets with the client MAC addresses as the source MAC addresses respectively. This effectively informs the switch connected to the previously inactive SEA that these client MAC addresses are to be routed through this switch port; the client MAC addresses saved on the switch connected to the previously active SEA are cleared as a result. | 08-01-2013 |
20140019572 | Remote Direct Memory Access Socket Aggregation - Byte utilization is improved in Remote Direct Memory Access (RDMA) communications by detecting a plurality of concurrent messages on a plurality of application sockets which are destined for the same application, client or computer, intercepting those messages and consolidating their payloads into larger payloads, and then transmitting those consolidated messages to the destination, thereby increasing the payload-to-overhead byte utilization of the RDMA transmissions. At the receiving end, multiplexing information is used to unpack the consolidated messages, and to put the original payloads into a plurality of messages which are then fed into the receiving sockets to the destination application, client or computer, thereby making the consolidation process transparent between the initiator and the target. | 01-16-2014 |
20140019574 | Remote Direct Memory Access Socket Aggregation - Byte utilization is improved in Remote Direct Memory Access (RDMA) communications by detecting a plurality of concurrent messages on a plurality of application sockets which are destined for the same application, client or computer, intercepting those messages and consolidating their payloads into larger payloads, and then transmitting those consolidated messages to the destination, thereby increasing the payload-to-overhead byte utilization of the RDMA transmissions. At the receiving end, multiplexing information is used to unpack the consolidated messages, and to put the original payloads into a plurality of messages which are then fed into the receiving sockets to the destination application, client or computer, thereby making the consolidation process transparent between the initiator and the target. | 01-16-2014 |
20140140201 | SEA FAILOVER MECHANISM WITH MINIMIZED PACKET LOSSES - Provided are techniques for active SEA learning about a client LPAR MAC addresses via address resolution protocol (ARP) packets received on a virtual interface (of the active SEA). Any new client MAC addresses learned on the active SEA are sent to the inactive SEA via a control channel. When SEA failover happens, as the previously inactive SEA is about to become active, it will first send out RARP (reverse ARP) packets with the client MAC addresses as the source MAC addresses respectively. This effectively informs the switch connected to the previously inactive SEA that these client MAC addresses are to be routed through this switch port; the client MAC addresses saved on the switch connected to the previously active SEA are cleared as a result. | 05-22-2014 |
Patent application number | Description | Published |
20110251377 | IONIC LIQUID SYSTEMS FOR THE PROCESSING OF BIOMASS, THEIR COMPONENTS AND/OR DERIVATIVES, AND MIXTURES THEREOF - Disclosed herein are compositions and methods that involve ionic liquids and biomass. In one aspect, the disclosure relates to ionic liquid systems for the processing of biomass, their components and/or derivatives, and mixtures thereof. | 10-13-2011 |
20120115729 | PROCESS FOR FORMING FILMS, FIBERS, AND BEADS FROM CHITINOUS BIOMASS - Disclosed is a process for forming films, fibers, and beads comprising a chitinous mass, for example, chitin, chitosan obtained from one or more biomasses. The disclosed process can be used to prepare films, fibers, and beads comprising only polymers, i.e., chitin, obtained from a suitable biomass, or the films, fibers, and beads can comprise a mixture of polymers obtained from a suitable biomass and a naturally occurring and/or synthetic polymer. Disclosed herein are the films, fibers, and beads obtained from the disclosed process. This Abstract is presented solely to aid in searching the subject matter disclosed herein and is not intended to define, limit, or otherwise provide the full scope of the disclosed subject matter. | 05-10-2012 |
20120245336 | COMPOSITIONS CONTAINING RECYCLABLE IONIC LIQUIDS FOR USE IN BIOMASS PROCESSING - Compositions containing biomass, an ionic liquid, and an amide are described herein. Methods of their preparation and use in extracting and processing biomass are also described herein. Further described herein are films and fibers prepared from the compositions. Methods of recovering the ionic liquids used to process the biomass are also provided. | 09-27-2012 |